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    MOSFET TRANSISTORS LOW VOLTAGE Search Results

    MOSFET TRANSISTORS LOW VOLTAGE Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation
    XPJ1R004PB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 40 V, 160 A, 0.001 Ω@10V, S-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK4K1A60F Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 600 V, 2.0 A, 4.1 Ohm@10V, TO-220SIS Visit Toshiba Electronic Devices & Storage Corporation
    TK090U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 30 A, 0.09 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    MOSFET TRANSISTORS LOW VOLTAGE Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: US6J2 Transistors 2.5V Drive Pch+Pch MOSFET US6J2 zStructure Silicon P-channel MOSFET zDimensions Unit : mm TUMT6 0.2Max. zFeatures 1) Two Pch MOSFET transistors in a single TUMT6 package. 2) Mounting cost and area can be cut in half. 3) Low on-resistance.


    Original     		PDF

    Untitled

    Abstract: No abstract text available
    Text: EM6M1 Transistors 2.5V Drive Nch+Pch MOSFET EM6M1 zStructure Silicon N-channel MOSFET / Silicon P-channel MOSFET zDimensions Unit : mm EMT6 zFeatures 1) Nch MOSFET and Pch MOSFET are put in EMT6 package. 2) High-speed switching. 3) Low voltage drive (2.5V drive).


    Original     		PDF

    EM6M1

    Abstract: MOSFET IGSS 100A
    Text: EM6M1 Transistors 2.5V Drive Nch+Pch MOSFET EM6M1 zStructure Silicon N-channel MOSFET / Silicon P-channel MOSFET zDimensions Unit : mm EMT6 zFeatures 1) Nch MOSFET and Pch MOSFET are put in EMT6 package. 2) High-speed switching. 3) Low voltage drive (2.5V drive).


    Original     		PDF

    Untitled

    Abstract: No abstract text available
    Text: 1.5V Drive Pch+Pch MOSFET QS6J11 zDimensions Unit : mm zStructure Silicon P-channel MOSFET TSMT6 1.0MAX 2.9 1.9 0.95 0.95 zFeatures 1) Two Pch MOSFET transistors in a single TSMT6 package. 2) Low on-state resistance with a fast switching. 3) Low voltage drive (1.5V).


    Original     		PDF QS6J11 R0039A

    TUMT6

    Abstract: RZL025P01 12a50
    Text: RZL025P01 Transistors 1.5V Drive Pch MOSFET RZL025P01 zDimensions Unit : mm zStructure Silicon P-channel MOSFET 0.2Max. TUMT6 zFeatures 1) Low on-resistance. 2) High power package. 3) Low voltage drive. (1.5V) Abbreviated symbol : YC zApplication Switching


    Original     		PDF RZL025P01 TUMT6 RZL025P01 12a50

    Untitled

    Abstract: No abstract text available
    Text: RUL035N02 Transistors 1.5V Drive Nch MOSFET RUL035N02 zStructure Silicon N-channel MOSFET zDimensions Unit : mm TUMT6 0.2Max. zFeatures 1) Low On-resistance. 2) Space saving, small surface mount package (TUMT6). 3) Low voltage drive (1.5V drive). zApplications


    Original     		PDF RUL035N02

    Untitled

    Abstract: No abstract text available
    Text: RUL035N02 Transistors 2.5V Drive Nch MOSFET RUL035N02 zStructure Silicon N-channel MOSFET zDimensions Unit : mm TUMT6 0.2Max. zFeatures 1) Low On-resistance. 2) Space saving, small surface mount package (TUMT6). 3) Low voltage drive (2.5V drive). zApplications


    Original     		PDF RUL035N02 RUL035N02

    tumt3

    Abstract: Z diode RTF025N03
    Text: RTF025N03 Transistors 2.5V Drive Nch MOSFET RTF025N03 zStructure Silicon N-channel MOSFET zDimensions Unit : mm 0.2Max. TUMT3 zFeatures 1) Low On-resistance. 2) Space saving, small surface mount package (TUMT3). 3) Low voltage drive (2.5V drive). (1) Gate


    Original     		PDF RTF025N03 tumt3 Z diode RTF025N03

    RUF015N02

    Abstract: tumt3
    Text: RUF015N02 Transistors 1.8V Drive Nch MOSFET RUF015N02 zStructure Silicon N-channel MOSFET zDimensions Unit : mm 0.2Max. TUMT3 zFeatures 1) Low On-resistance. 2) Space saving, small surface mount package (TUMT3). 3) Low voltage drive (1.8V drive). (1) Gate


    Original     		PDF RUF015N02 RUF015N02 tumt3

    RUF025N02

    Abstract: No abstract text available
    Text: RUF025N02 Transistors 1.5V Drive Nch MOSFET RUF025N02 zStructure Silicon N-channel MOSFET zDimensions Unit : mm 0.2Max. TUMT3 zFeatures 1) Low On-resistance. 2) Space saving, small surface mount package (TUMT3). 3) Low voltage drive (1.5V drive). (1) Gate


    Original     		PDF RUF025N02 RUF025N02

    AYWW marking code IC

    Abstract: NUS3116MT NUS3116MTR2G OF BJT 547
    Text: NUS3116MT Main Switch Power MOSFET and Dual Charging BJT -12 V, -6.2 A, mCoolE Single P-Channel with Dual PNP low Vce sat Transistors, 3x3Ămm WDFN Package This device integrates one high performance power MOSFET and two low Vce(sat) transistors, greatly reducing the layout space and


    Original     		PDF NUS3116MT NUS3116MT/D AYWW marking code IC NUS3116MT NUS3116MTR2G OF BJT 547

    NUS3116MT

    Abstract: No abstract text available
    Text: NUS3116MT Main Switch Power MOSFET and Dual Charging BJT -12 V, -6.2 A, mCoolE Single P-Channel with Dual PNP low Vce sat Transistors, 3x3Ămm WDFN Package This device integrates one high performance power MOSFET and two low Vce(sat) transistors, greatly reducing the layout space and


    Original     		PDF NUS3116MT NUS3116MT/D NUS3116MT

    Untitled

    Abstract: No abstract text available
    Text: RTL035N03 Transistors 2.5V Drive Nch MOSFET RTL035N03 Structure Silicon N-channel MOSFET Dimensions Unit : mm TUMT6 0.2Max. Features 1) Low On-resistance. 2) Space saving, small surface mount package (TUMT6). 3) Low voltage drive (2.5V drive). Abbreviated symbol : PM


    Original     		PDF RTL035N03

    TUMT6

    Abstract: Rl86 n-channel 2.5v mosfet Z diode RTL035N03
    Text: RTL035N03 Transistors 2.5V Drive Nch MOSFET RTL035N03 zStructure Silicon N-channel MOSFET zDimensions Unit : mm TUMT6 0.2Max. zFeatures 1) Low On-resistance. 2) Space saving, small surface mount package (TUMT6). 3) Low voltage drive (2.5V drive). Abbreviated symbol : PM


    Original     		PDF RTL035N03 TUMT6 Rl86 n-channel 2.5v mosfet Z diode RTL035N03

    Untitled

    Abstract: No abstract text available
    Text: 1.5V Drive Pch+Pch MOSFET US6J11 zDimensions Unit : mm zStructure Silicon P-channel MOSFET 0.2Max. TUMT6 zFeatures 1) Two Pch MOSFET transistors in a single TUMT6 package. 2) Mounting cost and area can be cut in half. 3) Low on-resistance. 4) Low voltage drive (1.5V) makes this device


    Original     		PDF US6J11 R0039A

    RTF010P02

    Abstract: No abstract text available
    Text: RTF010P02 Transistors 2.5V Drive Pch MOSFET RTF010P02 zDimensions Unit : mm zStructure Silicon P-channel MOSFET 0.2Max. TUMT3 zFeatures 1) Low on-resistance. (570mΩ at 2.5V) 2) High power package. 3) High speed switching. 4) Low voltage drive. (2.5V) (1) Gate


    Original     		PDF RTF010P02 RTF010P02

    RTF020P02

    Abstract: No abstract text available
    Text: RTF020P02 Transistors 2.5V Drive Pch MOSFET RTF020P02 zDimensions Unit : mm zStructure Silicon P-channel MOSFET 0.2Max. TUMT3 zFeatures 1) Low on-resistance. (120mΩ at 2.5V) 2) High power package. 3) High speed switching. 4) Low voltage drive. (2.5V) (1) Gate


    Original     		PDF RTF020P02 RTF020P02

    Untitled

    Abstract: No abstract text available
    Text: US6M2 Transistors 2.5V Drive Nch+Pch MOSFET US6M2 zStructure Silicon N-channel MOSFET / Silicon P-channel MOSFET zDimensions Unit : mm 0.2Max. TUMT6 zFeatures 1) Nch MOSFET and Pch MOSFET are put in TUMT6 package. 2) High-speed switching, low On-resistance.


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    TUMT6

    Abstract: us6k Z diode
    Text: US6K1 Transistors 2.5V Drive Nch+Nch MOSFET US6K1 zStructure Silicon N-channel MOSFET zDimensions Unit : mm 0.2Max. TUMT6 zFeatures 1) Low On-resistance. 2) Space saving, small surface mount package (TUMT6). 3) Low voltage drive (2.5V drive). Abbreviated symbol : K01


    Original     		PDF

    Untitled

    Abstract: No abstract text available
    Text: RTF025N03 Transistors 2.5V Drive Nch MOSFET RTF025N03 Structure Silicon N-channel MOSFET Dimensions Unit : mm 0.2Max. TUMT3 Features 1) Low On-resistance. 2) Space saving, small surface mount package (TUMT3). 3) Low voltage drive (2.5V drive). (1) Gate (2) Source


    Original     		PDF RTF025N03

    20V P-Channel Power MOSFET

    Abstract: US6M2
    Text: US6M2 Transistors 2.5V Drive Nch+Pch MOSFET US6M2 zStructure Silicon N-channel MOSFET / Silicon P-channel MOSFET zDimensions Unit : mm 0.2Max. TUMT6 zFeatures 1) Nch MOSFET and Pch MOSFET are put in TUMT6 package. 2) High-speed switching, low On-resistance.


    Original     		PDF

    RTF015P02

    Abstract: No abstract text available
    Text: RTF015P02 Transistors 2.5V Drive Pch MOSFET RTF015P02 zDimensions Unit : mm zStructure Silicon P-channel MOSFET 0.2Max. TUMT3 zFeatures 1) Low on-resistance. (180mΩ at 2.5V) 2) High power package. 3) High speed switching. 4) Low voltage drive. (2.5V) (1) Gate


    Original     		PDF RTF015P02 RTF015P02

    Untitled

    Abstract: No abstract text available
    Text: RTF010P02 Transistors 2.5V Drive Pch MOSFET RTF010P02 zDimensions Unit : mm zStructure Silicon P-channel MOSFET 0.2Max. TUMT3 zFeatures 1) Low on-resistance. (570mΩ at 2.5V) 2) High power package. 3) High speed switching. 4) Low voltage drive. (2.5V) (1) Gate


    Original     		PDF RTF010P02 R1102A

    Untitled

    Abstract: No abstract text available
    Text: RUF015N02 Transistors 1.8V Drive Nch MOSFET RUF015N02 Structure Silicon N-channel MOSFET Dimensions Unit : mm 0.2Max. TUMT3 Features 1) Low On-resistance. 2) Space saving, small surface mount package (TUMT3). 3) Low voltage drive (1.8V drive). (1) Gate (2) Source


    Original     		PDF RUF015N02