MOSFET TRANSISTOR SMD MARKING CODE NA Search Results
MOSFET TRANSISTOR SMD MARKING CODE NA Result Highlights (5)
Part | ECAD Model | Manufacturer | Description | Download | Buy |
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BLM15PX181BH1D | Murata Manufacturing Co Ltd | FB SMD 0402inch 180ohm POWRTRN |
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BLM15PX221SH1D | Murata Manufacturing Co Ltd | FB SMD 0402inch 220ohm POWRTRN |
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BLM21HE601SH1L | Murata Manufacturing Co Ltd | FB SMD 0805inch 600ohm POWRTRN |
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DLW21SH670HQ2L | Murata Manufacturing Co Ltd | CMC SMD 67ohm 320mA POWRTRN |
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BLM15PX800BH1D | Murata Manufacturing Co Ltd | FB SMD 0402inch 80ohm POWRTRN |
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MOSFET TRANSISTOR SMD MARKING CODE NA Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
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Motorola transistor smd marking codes
Abstract: STMicroelectronics smd marking code TRANSISTOR SMD MARKING CODE 1a SMD codes smd zener diode colour code smd transistor equivalent table maxim smd code Zener diode smd marking codes colour code diode zener SMD code
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MOSFET TRANSISTOR SMD MARKING CODE 11
Abstract: NXP SMD TRANSISTOR MARKING CODE s1
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PMDXB600UNE DFN1010B-6 OT1216) MOSFET TRANSISTOR SMD MARKING CODE 11 NXP SMD TRANSISTOR MARKING CODE s1 | |
Contextual Info: DF N1 01 0B -6 NX7002BKXB 60 V, dual N-channel Trench MOSFET 10 December 2014 Product data sheet 1. General description Dual N-channel enhancement mode Field-Effect Transistor FET in a leadless ultra small DFN1010B-6 (SOT1216) Surface-Mounted Device (SMD) plastic package using Trench |
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NX7002BKXB DFN1010B-6 OT1216) | |
A07 smd transistor
Abstract: SmD TRANSISTOR a45 TRANSISTOR SMD MARKING CODE A45 placeholder for manufacturing site code
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NX2301P O-236AB) AEC-Q101 A07 smd transistor SmD TRANSISTOR a45 TRANSISTOR SMD MARKING CODE A45 placeholder for manufacturing site code | |
Contextual Info: DF N1 10B -6 PMDXB950UPE 20 V, dual P-channel Trench MOSFET 10 September 2013 Product data sheet 1. General description Dual P-channel enhancement mode Field-Effect Transistor FET in a leadless ultra small DFN1010B-6 (SOT1216) Surface-Mounted Device (SMD) plastic package using Trench |
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PMDXB950UPE DFN1010B-6 OT1216) | |
STK and STR integrated circuits
Abstract: transistor smd zG 1e STR-Z4579 Turuta 6 pin TRANSISTOR SMD CODE PA transistor 5d smd ELM85361A STK and STR integrated circuits, 2011 edition 5g smd transistor 15D diode smd code
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OD-80 OT-223 OT-89 STK and STR integrated circuits transistor smd zG 1e STR-Z4579 Turuta 6 pin TRANSISTOR SMD CODE PA transistor 5d smd ELM85361A STK and STR integrated circuits, 2011 edition 5g smd transistor 15D diode smd code | |
smd code marking NEC
Abstract: TRANSISTOR SMD CODE PACKAGE SOT89 52 10A 38w smd transistor smd mark code 38w SMD 8PIN IC MARKING CODE 251 marking code E1 SMD 5pin 6pin dip SMD mosfet MARKING code T mosfet SMD CODE PACKAGE SOT89 52 10A marking code E2 p SMD Transistor TRANSISTOR SMD MARKING CODE MP
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G18756EU3V0SG00 smd code marking NEC TRANSISTOR SMD CODE PACKAGE SOT89 52 10A 38w smd transistor smd mark code 38w SMD 8PIN IC MARKING CODE 251 marking code E1 SMD 5pin 6pin dip SMD mosfet MARKING code T mosfet SMD CODE PACKAGE SOT89 52 10A marking code E2 p SMD Transistor TRANSISTOR SMD MARKING CODE MP | |
MOSFET TRANSISTOR SMD MARKING CODE nhContextual Info: Product specification PMV160UP 20 V, 1.2 A P-channel Trench MOSFET Rev. 2 — 6 December 2011 Product data sheet 1. Product profile 1.1 General description P-channel enhancement mode Field-Effect Transistor FET in a SOT23 (TO-236AB) small Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. |
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PMV160UP O-236AB) MOSFET TRANSISTOR SMD MARKING CODE nh | |
Contextual Info: Product specification PMV65XP 20 V, single P-channel Trench MOSFET 12 February 2013 Product data sheet 1. General description P-channel enhancement mode Field-Effect Transistor FET in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET |
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PMV65XP O-236AB) | |
Contextual Info: Product specification PMV16UN 20 V, 5.8 A N-channel Trench MOSFET Rev. 1 — 4 April 2011 Product data sheet 1. Product profile 1.1 General description N-channel enhancement mode Field-Effect Transistor FET in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using |
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PMV16UN O-236AB) | |
transistor smd code marking 420Contextual Info: Product specification PMV30XN 20 V, 3.2 A N-channel Trench MOSFET Rev. 1 — 22 June 2011 Product data sheet 1. Product profile 1.1 General description N-channel enhancement mode Field-Effect Transistor FET in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench |
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PMV30XN O-236AB) transistor smd code marking 420 | |
Contextual Info: Product specification PMV37EN 30 V, 3.1 A N-channel Trench MOSFET Rev. 1 — 9 May 2011 Product data sheet 1. Product profile 1.1 General description N-channel enhancement mode Field-Effect Transistor FET in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench |
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PMV37EN O-236AB) | |
TRANSISTOR SMD MARKING CODE QR
Abstract: MOSFET TRANSISTOR SMD MARKING CODE NA MOSFET TRANSISTOR SMD MARKING CODE 11
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PMC85XP DFN2020-6 OT1118) TRANSISTOR SMD MARKING CODE QR MOSFET TRANSISTOR SMD MARKING CODE NA MOSFET TRANSISTOR SMD MARKING CODE 11 | |
Contextual Info: Product specification PMV185XN 30 V, single N-channel Trench MOSFET 3 August 2012 Product data sheet 1. Product profile 1.1 General description N-channel enhancement mode Field-Effect Transistor FET in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET |
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PMV185XN O-236AB) gate-sou15 | |
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TRANSISTOR SMD MARKING CODE 1 KWContextual Info: Product specification PMV20XN 30 V, 4.8 A N-channel Trench MOSFET Rev. 1 — 5 April 2011 Product data sheet 1. Product profile 1.1 General description N-channel enhancement mode Field-Effect Transistor FET in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using |
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PMV20XN O-236AB) TRANSISTOR SMD MARKING CODE 1 KW | |
Contextual Info: Product specification PMV32UP 20 V, 4 A P-channel Trench MOSFET Rev. 1 — 11 March 2011 Product data sheet 1. Product profile 1.1 General description P-channel enhancement mode Field-Effect Transistor FET in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench |
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PMV32UP O-236AB) | |
Contextual Info: Product specification PMV48XP 20 V, 3.5 A P-channel Trench MOSFET Rev. 1 — 21 December 2010 Product data sheet 1. Product profile 1.1 General description P-channel enhancement mode Field-Effect Transistor FET in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using |
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PMV48XP O-236AB) | |
Contextual Info: Product specification PMV170UN 20 V, single N-channel Trench MOSFET 3 August 2012 Product data sheet 1. Product profile 1.1 General description N-channel enhancement mode Field-Effect Transistor FET in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET |
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PMV170UN O-236AB) | |
Contextual Info: Product specification PMV90EN 30 V, single N-channel Trench MOSFET Rev. 1 — 13 February 2012 Product data sheet 1. Product profile 1.1 General description N-channel enhancement mode Field-Effect Transistor FET in a SOT23 (TO-236AB) small Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. |
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PMV90EN O-236AB) | |
NXP SMD TRANSISTOR MARKING CODE s1Contextual Info: DF N2 020 -6 PMDPB760EN 100 V, dual N-channel Trench MOSFET 29 May 2013 Objective data sheet 1. General description Dual N-channel enhancement mode Field-Effect Transistor FET in a small and leadless ultra thin DFN2020-6 (SOT1118) Surface-Mounted Device (SMD) plastic package using |
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PMDPB760EN DFN2020-6 OT1118) NXP SMD TRANSISTOR MARKING CODE s1 | |
SMD transistor Marking 1xContextual Info: PMFPB8032XP 20 V, 3.7 A / 320 mV VF P-channel MOSFET-Schottky combination 21 December 2012 Product data sheet 1. General description Small-signal P-channel enhancement mode Field-Effect Transistor FET using Trench MOSFET technology and ultra low VF Maximum Efficiency General Application (MEGA) |
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PMFPB8032XP DFN2020-6 OT1118) SMD transistor Marking 1x | |
Contextual Info: Product specification PMV33UPE 20 V, single P-channel Trench MOSFET Rev. 1 — 12 June 2012 Product data sheet 1. Product profile 1.1 General description P-channel enhancement mode Field-Effect Transistor FET in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET |
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PMV33UPE O-236AB) | |
Contextual Info: Product specification PMV65UN 20 V, single N-channel Trench MOSFET 13 November 2012 Product data sheet 1. Product profile 1.1 General description N-channel enhancement mode Field-Effect Transistor FET in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET |
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PMV65UN O-236AB) | |
MOSFET TRANSISTOR SMD 033
Abstract: 440 transistor
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PMFPB8040XP DFN2020-6 OT1118) MOSFET TRANSISTOR SMD 033 440 transistor |