MOSFET SMD MARKING CODE 618 Search Results

smd code book

Abstract: transistor SMD P1f marking code W16 SMD Transistor TRANSISTOR SMD MARKING CODE jg smd transistor WW1 Transistor SMD a7s DIODE SMD L4W smd diode zener code pj 78 smd transistor wv4 Motorola transistor smd marking codes
Contextual Info: The SMD Code Book 1st character of code 0123456789 ABCDEFGHI JKLMNOPQ R STUVWXYZ Bases The SMD Codebook R P Blackwell, GM4PMK To look up a coded device, click on the first character of the device code in the table on the left. A-F G-K L-P Q-V W-Z AQ-FQ GQ-LQ

symbol 16n50e

Abstract: 16N50E circuit 16n50e ms5f6867 smd code Hall MOSFET SMD MARKING CODE 618 FMC16N50E FMB16N50E Diode type SMD marking SJ N channel mosfet TO220
Contextual Info: Device Name DATE DRAWN July.-19-'07 CHECKED July.-19-'07 CHECKED July.-19-'07 NAME APPROVED : DWG.NO. This m aterial and the inform ation herein is the p roperty of Fuji Electric Device Technology C o.,Ltd. They s hall be neither reprod uced, copied,lent,

16n60e

Abstract: marking code EA SMD MOSFET mosfet smd code tc FMB20N50E mosfet marking ke
Contextual Info: Device Name DATE DRAWN Mar.-30-'07 CHECKED Mar.-30-'07 CHECKED Mar.-30-'07 NAME APPROVED : DWG.NO. This m aterial and the inform ation herein is the p roperty of Fuji Electric Device Technology C o.,Ltd. They s hall be neither reprod uced, copied,lent, or disclosed in any way whatsoever for the use of any third party nor used

16n60e

Abstract: marking code EA SMD MOSFET Method CF st smd diode marking code ex KE 16A DIODE
Contextual Info: Device Name DATE DRAWN Mar.-30-'07 CHECKED Mar.-30-'07 CHECKED Mar.-30-'07 NAME APPROVED : DWG.NO. This m aterial and the inform ation herein is the p roperty of Fuji Electric Device Technology C o.,Ltd. They s hall be neither reprod uced, copied,lent, or disclosed in any way whatsoever for the use of any third party nor used

13N60E

Abstract: Diode SMD SJ 65a SMD Diode KE Sj 07 DIODE SMD fmc1 fuji smd lot code 13N60 Diode type SMD marking SJ Diode type SMD marking SJ 09 Diode type SMD SJ 09
Contextual Info: Device Name DATE DRAWN Jun.-12-'07 CHECKED Jun.-12-'07 CHECKED Jun.-12-'07 NAME : APPROVED DWG.NO. This m aterial and the inform ation herein is the p roperty of Fuji Electric Device Technology C o.,Ltd. They s hall be neither reprod uced, copied,lent, or disclosed in any way w hats oever for the use of any third party nor

85GA

Abstract: P850-G120-WH P500-G120-WH GR-1089 P500-G200-WH MOV surge protection circuit diagram k20e VISHAY BC 047 P850-G200-WH
Contextual Info: PL IA NT Features CO M • Formerly The P500-G & P850-G Series are currently available, but not recommended for new designs. Bourns TBU-PL Series is preferred. brand *R oH S ■ Extremely high speed performance ■ Blocks high voltages and currents ■ Two TBU® protectors in one small package

P500-Gxxx

Abstract: fultec GR-1089 P500-G200-WH P850-G120-WH 85GA 50ga MOSFET SMD MARKING CODE 618 bourns potentiometer 321
Contextual Info: PL IA NT Features CO M • Formerly The P500-G & P850-G Series are currently available, but not recommended for new designs. Bourns TBU-PL Series is preferred. brand *R oH S ■ Extremely high speed performance ■ Blocks high voltages and currents ■ Two TBU® protectors in one small package

CNR-10D201K

Abstract: CNR10D201K CNR-10D361K MOSFET SMD MARKING CODE 618 bourns potentiometer 321 CNR MOV 616A G-120 C Mosfet CNR10D201 DIODE smd marking v1
Contextual Info: PL IA NT CO M *R oH S Features Applications • Formerly ■ POTS linecards ■ ■ VolP equipment ■ ■ ■ ■ ■ brand Extremely high speed performance Blocks high voltages and currents Two TBU protectors in one small package Simple, superior circuit protection

CNR MOV

Abstract: 85GA CNR-10D201K
Contextual Info: PL IA NT CO M *R oH S Features Applications • Formerly ■ POTS linecards ■ ■ VolP equipment ■ ■ ■ ■ ■ brand Extremely high speed performance Blocks high voltages and currents Two TBU protectors in one small package Simple, superior circuit protection

20n50e

Abstract: 20N50ES 20n50 FMB20N50ES marking code SJ transistors FMI20N50E
Contextual Info: Device Name DATE DRAWN Oct.-14-'08 CHECKED Oct.-14-'08 CHECKED Oct.-14-'08 NAME APPROVED DWG.NO. This material and the information herein is the property of Fuji Electric Device Technology Co.,Ltd. They shall be neither reproduced, copied,lent, or disclosed in any way whatsoever for the use of any third party nor

16N50ES

Abstract: 16n50e MS5F7226 RGS18 smd code font type
Contextual Info: Device Name DATE DRAWN Nov.-21-'08 CHECKED Nov.-21-'08 CHECKED Nov.-21-'08 NAME APPROVED DWG.NO. This material and the information herein is the property of Fuji Electric Device Technology Co.,Ltd. They shall be neither reproduced, copied,lent, or disclosed in any way whatsoever for the use of any third party nor

Diode SMD SJ 94

Abstract: 16N60ES FUJI DATE CODE DIODE marking code SJ
Contextual Info: Device Name DATE DRAWN Oct.-10-'08 CHECKED Oct.-10-'08 CHECKED Oct.-10-'08 NAME APPROVED DWG.NO. This material and the information herein is the property of Fuji Electric Device Technology Co.,Ltd. They shall be neither reproduced, copied,lent, or disclosed in any way whatsoever for the use of any third party nor

12N50E

Abstract: 12N50ES FMI12N50E Diode type SMD marking SJ Sj 07 DIODE SMD FUJI DATE CODE fmi12n50es and/sj 1408
Contextual Info: Device Name DATE DRAWN Oct.-14-'08 CHECKED Oct.-14-'08 CHECKED Oct.-14-'08 NAME APPROVED DWG.NO. This material and the information herein is the property of Fuji Electric Device Technology Co.,Ltd. They shall be neither reproduced, copied,lent, or disclosed in any way whatsoever for the use of any third party nor

Contextual Info: SO T2 3 PMV65XPEA 20 V, P-channel Trench MOSFET 27 November 2014 Product data sheet 1. General description P-channel enhancement mode Field-Effect Transistor FET in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET

Contextual Info: PL IA N T Features Bourns Model P500-G and P850-G Series TBU® HSPs are not recommended for POTS applications. This series is suited for applications requiring a dual bidirectional device where 50 ohms of series resistance is acceptable. For new SLIC applications, we recommend that

LE9530

Abstract: LE9520 10D391K GR-1089-CORE K501 smd code marking pk oh 07D201K k45 mosfet 10D391
Contextual Info: PL IA NT CO M *R oH S K C955901 Features Applications • Superior circuit protection ■ SLIC protection ■ Overcurrent & overvoltage protection ■ Cable & DSL ■ Blocks surges up to rated limits ■ MDU/MTU modems ■ High speed performance ■ ONT ■ Small SMT package

le9530

Abstract: GR-1089-CORE K501 07D201K
Contextual Info: PL IA NT CO M *R oH S K C955901 Features Applications • Superior circuit protection ■ SLIC protection ■ Overcurrent & overvoltage protection ■ Cable & DSL ■ Blocks surges up to rated limits ■ MDU/MTU modems ■ High speed performance ■ ONT ■ Small SMT package

Contextual Info: PL IA N T Features Bourns Model P500-G and P850-G Series TBU® HSPs are not recommended for POTS applications. This series is suited for applications requiring a dual bidirectional device where 50 ohms of series resistance is acceptable. For new SLIC applications, we recommend that

07D201

Abstract: le9530 LE95
Contextual Info: PL IA NT CO M *R oH S K C955901 Features Applications • Superior circuit protection ■ SLIC protection ■ Overcurrent & overvoltage protection ■ Cable & DSL ■ Blocks surges up to rated limits ■ MDU/MTU modems ■ High speed performance ■ ONT ■ Small SMT package

LE9530

Abstract: LE9520 LE953 GR-1089-CORE L501 TISP4400M3BJ TISP4500H3BJ MOV-10D20 MOV-10D201
Contextual Info: PL IA NT CO M *R oH S L C955401 Features Applications • Superior circuit protection ■ SLIC protection ■ Overcurrent & overvoltage protection ■ Cable & DSL ■ Blocks surges up to rated limits ■ MDU/MTU modems ■ High speed performance ■ ONT ■ Small SMT package

le9530

Abstract: LE9520 MOV surge protection circuit diagram
Contextual Info: PL IA NT CO M *R oH S L C955401 Features Applications • Superior circuit protection ■ SLIC protection ■ Overcurrent & overvoltage protection ■ Cable & DSL ■ Blocks surges up to rated limits ■ MDU/MTU modems ■ High speed performance ■ ONT ■ Small SMT package

le9530

Abstract: LE9520 k45 mosfet MOV surge protection circuit diagram 10D391K PL050 c954 PL05 GR-1089-CORE L501
Contextual Info: PL IA NT CO M *R oH S L C955401 Features Applications • Superior circuit protection ■ SLIC protection ■ Overcurrent & overvoltage protection ■ Cable & DSL ■ Blocks surges up to rated limits ■ MDU/MTU modems ■ High speed performance ■ ONT ■ Small SMT package

Contextual Info: SO T2 3 PMV65XPE 20 V, P-channel Trench MOSFET 25 April 2014 Product data sheet 1. General description P-channel enhancement mode Field-Effect Transistor FET in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.

12N60ES

Abstract: 12N60E 12n60 on semiconductor marking code dpack 264MH Sj 07 DIODE SMD dpack marking code 23
Contextual Info: Device Name DATE DRAWN Sep.-29-'08 CHECKED Sep.-29-'08 CHECKED Sep.-29-'08 NAME APPROVED : DWG.NO. This material and the information herein is the property of Fuji Electric Device Technology Co.,Ltd. They shall be neither reproduced, copied,lent, or disclosed in any way whatsoever for the use of any third party nor