MOSFET RDS(ON) 0.008 Search Results

APM2103SG

Abstract: STD-020C p channel mosfet
Contextual Info: APM2103SG Dual P-Channel Enhancement Mode MOSFET Features • Pin Description -20V/-2.5A RDS ON = 88mΩ(typ.) @ VGS= -4.5V RDS(ON)= 120mΩ (typ.) @ VGS= -2.5V RDS(ON)= 160mΩ (typ.) @ VGS= -1.8V • • Super High Dense Cell Design Reliable and Rugged P Channel MOSFET

VN10KLS

Abstract: mosfet bs250 Si4730 SUP85N03-04P VN66AFD Si4835DY si5504 SI3459DV sup65p06 sub75p05
Contextual Info: Power MOSFET Selector Guide Vishay Siliconix LITTLE FOOT Plusä ä Schottky Name Channel Configuration VDS V rDS(on) @ 10.0V rDS(on) @ 4.5V rDS(on) @ 3.3V rDS(on) @ 2.5V rDS(on) @ 1.8V ID (A) Max. Qg (nC) Typ. PD (W) Max. SO-8 Si4831DY P Single Plus Integrated

STB60NH02L

Contextual Info: STB60NH02L N-CHANNEL 24V - 0.0085 Ω - 60A D²PAK STripFET III POWER MOSFET TYPE STB60NH02L • ■ ■ ■ ■ ■ ■ VDSS RDS on ID 24 V < 0.0105 Ω 60 A TYPICAL RDS(on) = 0.0085 Ω @ 10 V TYPICAL RDS(on) = 0.012 Ω @ 5 V RDS(ON) * Qg INDUSTRY’s BENCHMARK

B75NH02L

Abstract: STB75NH02L STB75NH02LT4
Contextual Info: STB75NH02L N-CHANNEL 24V - 0.0062Ω -75A - D2PAK STripFET III POWER MOSFET TARGET DATA TYPE STB75NH02L • ■ ■ ■ ■ ■ ■ VDSS RDS on ID 24V < 0.008Ω 75A TYPICAL RDS(on) = 0.0062Ω @ 10 V TYPICAL RDS(on) = 0.008Ω @ 5 V RDS(ON) * Qg INDUSTRY’s BENCHMARK

Contextual Info: SQ4483BEEY www.vishay.com Vishay Siliconix Automotive P-Channel 30 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) • TrenchFET Power MOSFET - 30 RDS(on) () at VGS = - 10 V 0.0085 • AEC-Q101 Qualifiedc RDS(on) () at VGS = - 4.5 V 0.0200

SMPS MOSFET

Abstract: 24V 10A SMPS ic
Contextual Info: PD-93892 PROVISIONAL IRF7458 SMPS MOSFET HEXFET Power MOSFET Applications l High Frequency DC-DC Converters with Synchronous Rectification VDSS RDS on max ID 30V 0.008Ω 14A Benefits Low Gate Impedance to Reduce Switching Losses l Ultra-Low RDS(on) at 10V VGS

b60nh02l

Abstract: RG211 STB60NH02L STB60NH02LT4 B60NH0
Contextual Info: STB60NH02L N-CHANNEL 24V - 0.0085 Ω - 60A D²PAK STripFET III POWER MOSFET TYPE STB60NH02L • ■ ■ ■ ■ ■ ■ VDSS RDS on ID 24 V < 0.0105 Ω 60 A TYPICAL RDS(on) = 0.0085 Ω @ 10 V TYPICAL RDS(on) = 0.012 Ω @ 5 V RDS(ON) * Qg INDUSTRY’s BENCHMARK

B60NH02L

Abstract: STB60NH02L STB60NH02LT4 RG-47 B60NH0
Contextual Info: STB60NH02L N-CHANNEL 24V - 0.0085 Ω - 60A D²PAK STripFET III POWER MOSFET TYPE STB60NH02L • ■ ■ ■ ■ ■ ■ VDSS RDS on ID 24 V < 0.0105 Ω 60 A TYPICAL RDS(on) = 0.0085 Ω @ 10 V TYPICAL RDS(on) = 0.012 Ω @ 5 V RDS(ON) * Qg INDUSTRY’s BENCHMARK

STD70NH02LT4

Abstract: D70NH02L STD70NH02L
Contextual Info: STD70NH02L N-CHANNEL 24V - 0.0062 W - 60A DPAK STripFET III POWER MOSFET TYPE STD70NH02L • ■ ■ ■ ■ ■ ■ VDSS RDS on ID 24 V < 0.008 W 60 A(*) TYPICAL RDS(on) = 0.0062 W @ 10 V TYPICAL RDS(on) = 0.008 W @ 5 V RDS(ON) * Qg INDUSTRY’s BENCHMARK

B60NH0

Contextual Info: STB60NH02L N-CHANNEL 24V - 0.0085 Ω - 60A D²PAK STripFET III POWER MOSFET TYPE STB60NH02L • ■ ■ ■ ■ ■ ■ VDSS RDS on ID 24 V < 0.0105 Ω 60 A TYPICAL RDS(on) = 0.0085 Ω @ 10 V TYPICAL RDS(on) = 0.012 Ω @ 5 V RDS(ON) * Qg INDUSTRY’s BENCHMARK

B60NH02L

Abstract: B60NH0 STB60NH02LT4 STB60NH02L L3 marking b60nh02
Contextual Info: STB60NH02L N-CHANNEL 24V - 0.0085 Ω - 60A D²PAK STripFET III POWER MOSFET TYPE STB60NH02L • ■ ■ ■ ■ ■ ■ VDSS RDS on ID 24 V < 0.0105 Ω 60 A TYPICAL RDS(on) = 0.0085 Ω @ 10 V TYPICAL RDS(on) = 0.012 Ω @ 5 V RDS(ON) * Qg INDUSTRY’s BENCHMARK

Contextual Info: SQ1905EL www.vishay.com Vishay Siliconix Automotive Dual P-Channel 1.8 V G-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) -8 RDS(on) () at VGS = - 4.5 V 0.6 RDS(on) () at VGS = - 2.5 V 0.932 RDS(on) () at VGS = - 1.8 V 2.27 ID (A) • TrenchFET Power MOSFET

60n3l

Abstract: 60N3LH5 STD60N3LH5
Contextual Info: STD60N3LH5 STU60N3LH5 N-channel 30V - 0.0072Ω - 48A - DPAK - IPAK STripFET V Power MOSFET Features Type VDSS RDS on Max ID STD60N3LH5 30V 0.008Ω 48A STU60N3LH5 30V 0.0084Ω 48A 3 3 • RDS(on) * Qg industry benchmark ■ Extremely low on-resistance RDS(on)

Contextual Info: STB60NH02L N-CHANNEL 24V - 0.0085 Ω - 60A D²PAK STripFET III POWER MOSFET PRELIMINARY DATA TYPE STB60NH02L • ■ ■ ■ ■ ■ ■ VDSS RDS on ID 24 V < 0.0105 Ω 60 A TYPICAL RDS(on) = 0.0085 Ω @ 10 V TYPICAL RDS(on) = 0.012 Ω @ 5 V RDS(ON) * Qg INDUSTRY’s BENCHMARK

STD70NH02LT4

Contextual Info: STD70NH02L N-CHANNEL 24V - 0.0062Ω - 70A - DPAK STripFET III POWER MOSFET TARGET DATA TYPE STD70NH02L • ■ ■ ■ ■ ■ ■ VDSS RDS on ID 24 V < 0.008Ω 70 A TYPICAL RDS(on) = 0.0062Ω @ 10 V TYPICAL RDS(on) = 0.008Ω @ 5 V RDS(ON) * Qg INDUSTRY’s BENCHMARK

STD70NH02LT4

Contextual Info: STD70NH02L N-CHANNEL 24V - 0.0062Ω - 60A - DPAK STripFET III POWER MOSFET TARGET DATA TYPE STD70NH02L • ■ ■ ■ ■ ■ ■ VDSS RDS on ID 24 V < 0.008Ω 60 A (*) TYPICAL RDS(on) = 0.0062Ω @ 10 V TYPICAL RDS(on) = 0.008Ω @ 5 V RDS(ON) * Qg INDUSTRY’s BENCHMARK

D50NH

Abstract: d50nh02l STD50NH02L STD50NH02L-1 STD50NH02LT4 d50nh02 D50n
Contextual Info: STD50NH02L N-CHANNEL 24V - 0.0085 Ω - 50A DPAK/IPAK STripFET III POWER MOSFET TYPE STD50NH02L • ■ ■ ■ ■ ■ ■ ■ VDSS RDS on ID 24 V < 0.0105 Ω 50 A TYPICAL RDS(on) = 0.0085 Ω @ 10 V TYPICAL RDS(on) = 0.012 Ω @ 5 V RDS(ON) * Qg INDUSTRY’s BENCHMARK

Contextual Info: STB80NF55-08 N-CHANNEL 55V - 0.0065Ω - 80A D2PAK STripFET POWER MOSFET TYPE STB80NF55-08 • VDSS RDS on ID 55 V <0.008Ω 80 A TYPICAL RDS(on) = 0.0065Ω 3 1 DESCRIPTION This Power Mosfet is the latest development of STMicroelectronics unique “Single Feature

Contextual Info: SQM110P06-8m9L www.vishay.com Vishay Siliconix Automotive P-Channel 60 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) • TrenchFET Power MOSFET - 60 RDS(on) () at VGS = - 10 V 0.0089 RDS(on) () at VGS = - 4.5 V 0.0132 ID (A) - 110 Configuration

3110 0001 mosfet

Abstract: IRF7463
Contextual Info: PD- 93843A IRF7463 SMPS MOSFET HEXFET Power MOSFET Applications High Frequency DC-DC Converters with Synchronous Rectification l VDSS RDS on max ID 30V 0.008Ω 14A Benefits Ultra-Low RDS(on) at 4.5V VGS l Low Charge and Low Gate Impedance to Reduce Switching Losses

Contextual Info: SQM120P06-07L www.vishay.com Vishay Siliconix Automotive P-Channel 60 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) • TrenchFET Power MOSFET - 60 RDS(on) () at VGS = - 10 V 0.0067 RDS(on) () at VGS = - 4.5 V 0.0088 ID (A) - 120 Configuration

Contextual Info: SQM120P06-07L www.vishay.com Vishay Siliconix Automotive P-Channel 60 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) • TrenchFET Power MOSFET - 60 RDS(on) () at VGS = - 10 V 0.0067 RDS(on) () at VGS = - 4.5 V 0.0088 ID (A) - 120 Configuration

Contextual Info: SQM120P06-07L www.vishay.com Vishay Siliconix Automotive P-Channel 60 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) • TrenchFET Power MOSFET - 60 RDS(on) () at VGS = - 10 V 0.0067 RDS(on) () at VGS = - 4.5 V 0.0088 ID (A) - 120 Configuration

SQM120P06-07L

Contextual Info: SQM120P06-07L www.vishay.com Vishay Siliconix Automotive P-Channel 60 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) • TrenchFET Power MOSFET - 60 RDS(on) () at VGS = - 10 V 0.0067 RDS(on) () at VGS = - 4.5 V 0.0088 ID (A) - 120 Configuration