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    MOSFET POPWER Search Results

    MOSFET POPWER Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TCK424G Toshiba Electronic Devices & Storage Corporation MOSFET Gate Driver IC, 2.7 to 28 V, External MOSFET Gate drive / Inrush current reducing, WCSP6G Visit Toshiba Electronic Devices & Storage Corporation
    TCK425G Toshiba Electronic Devices & Storage Corporation MOSFET Gate Driver IC, 2.7 to 28 V, External MOSFET Gate drive / Inrush current reducing, WCSP6G Visit Toshiba Electronic Devices & Storage Corporation
    TCK423G Toshiba Electronic Devices & Storage Corporation MOSFET Gate Driver IC, 2.7 to 28 V, External MOSFET Gate drive / Inrush current reducing, WCSP6G Visit Toshiba Electronic Devices & Storage Corporation
    TCK422G Toshiba Electronic Devices & Storage Corporation MOSFET Gate Driver IC, 2.7 to 28 V, External MOSFET Gate drive / Inrush current reducing, WCSP6G Visit Toshiba Electronic Devices & Storage Corporation
    MG800FXF1JMS3 Toshiba Electronic Devices & Storage Corporation N-ch SiC MOSFET Module, 3300 V, 800 A, iXPLV, High-side: SiC SBD、Low-side: SiC MOSFET Visit Toshiba Electronic Devices & Storage Corporation

    MOSFET POPWER Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    UF2805B

    Abstract: 1000 MHz transistor 5W
    Text: UF2805B RF Power MOSFET Transistor 5W, 100-500 MHz, 28V M/A-COM Products Released; RoHS Compliant Package Outline Features • • • • • • N-channel enhancement mode device DMOS structure Lower capacitances for broadband operation Common source configuration


    Original     		UF2805B UF2805B 1000 MHz transistor 5W PDF

    UF2840P

    Abstract: No abstract text available
    Text: UF2840P RF Power MOSFET Transistor 40W, 100-500 MHz, 28V M/A-COM Products Released; RoHS Compliant Package Outline Features • • • • • N-channel enhancement mode device DMOS structure Lower capacitances for broadband operation Common source configuration


    Original     		UF2840P UF2840P PDF

    Untitled

    Abstract: No abstract text available
    Text: UF28100M RF Power MOSFET Transistor 100W, 100-500 MHz, 28V M/A-COM Products Released - 08.07 Features • • • • • • PACKAGE OUTLINE N-channel enhancement mode device DMOS structure Lower capacitances for broadband operation High saturated output power


    Original     		UF28100M 25-j1 PDF

    UF28100M

    Abstract: UF28100 transistor 200mhz 100w
    Text: UF28100M RF Power MOSFET Transistor 100W, 100-500 MHz, 28V M/A-COM Products Released - 08.07 Features • • • • • • PACKAGE OUTLINE N-channel enhancement mode device DMOS structure Lower capacitances for broadband operation High saturated output power


    Original     		UF28100M UF28100M UF28100 transistor 200mhz 100w PDF

    UF2820P

    Abstract: No abstract text available
    Text: UF2820P RF Power MOSFET Transistor 20W, 100-500 MHz, 28V M/A-COM Products Released; RoHS Compliant Package Outline Features • • • • • N-channel enhancement mode device DMOS structure Lower capacitances for broadband operation Common source configuration


    Original     		UF2820P UF2820P PDF

    UF28100H

    Abstract: No abstract text available
    Text: UF28100H RF Power MOSFET Transistor 100W, 100-500 MHz, 28V M/A-COM Products Released - Ver 08.07 Features • • • • • • PACKAGE OUTLINE N-channel enhancement mode device DMOS structure Lower capacitances for broadband operation High saturated output power


    Original     		UF28100H 25-j1 UF28100H PDF

    UF2815B

    Abstract: k 815 MOSFET
    Text: UF2815B RF Power MOSFET Transistor 15W, 100-500 MHz, 28V M/A-COM Products Released - Ver 08.07 Package Outline Features • • • • • • • N-Channel enhancement mode device DMOS structure Lower capacitances for broadband operation Common source configuration


    Original     		UF2815B UF2815B k 815 MOSFET PDF

    UF28100H

    Abstract: 75J10 power supply 100w UF28100 transistor 200mhz 100w
    Text: UF28100H RF Power MOSFET Transistor 100W, 100-500 MHz, 28V M/A-COM Products Released - Ver 08.07 Features • • • • • • PACKAGE OUTLINE N-channel enhancement mode device DMOS structure Lower capacitances for broadband operation High saturated output power


    Original     		UF28100H UF28100H 75J10 power supply 100w UF28100 transistor 200mhz 100w PDF

    Untitled

    Abstract: No abstract text available
    Text: UF2815B RF Power MOSFET Transistor 15W, 100-500 MHz, 28V M/A-COM Products Released - Ver 08.07 Package Outline Features • • • • • • • N-Channel enhancement mode device DMOS structure Lower capacitances for broadband operation Common source configuration


    Original     		UF2815B PDF

    Untitled

    Abstract: No abstract text available
    Text: UF28100V RF Power MOSFET Transistor 100W, 100-500 MHz, 28V M/A-COM Products Released; RoHS Compliant Features • • • • • N-channel enhancement mode device DMOS structure Lower capacitances for broadband operation High saturated output power Lower noise figure than competitive devices


    Original     		UF28100V 25-j1 PDF

    UF28100V

    Abstract: UF28100 mosfet popwer
    Text: UF28100V RF Power MOSFET Transistor 100W, 100-500 MHz, 28V M/A-COM Products Released; RoHS Compliant Features • • • • • N-channel enhancement mode device DMOS structure Lower capacitances for broadband operation High saturated output power Lower noise figure than competitive devices


    Original     		UF28100V UF28100V UF28100 mosfet popwer PDF

    UF2805B

    Abstract: No abstract text available
    Text: UF2805B RF Power MOSFET Transistor 5W, 100-500 MHz, 28V Released; RoHS Compliant 20 Jan 11 Package Outline Features •      N-channel enhancement mode device DMOS structure Lower capacitances for broadband operation Common source configuration


    Original     		UF2805B UF2805B PDF