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    MOSFET P55 Search Results

    MOSFET P55 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    MG800FXF1JMS3 Toshiba Electronic Devices & Storage Corporation N-ch SiC MOSFET Module, 3300 V, 800 A, iXPLV, High-side: SiC SBD、Low-side: SiC MOSFET Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation
    XPJ1R004PB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 40 V, 160 A, 0.001 Ω@10V, S-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK4K1A60F Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 600 V, 2.0 A, 4.1 Ohm@10V, TO-220SIS Visit Toshiba Electronic Devices & Storage Corporation

    MOSFET P55 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    55NF06

    Abstract: P55NF06 P55nf*06 Mosfet P55NF06
    Text: 55NF06 Pb Free Plating Product 55NF06 Pb N-CHANNEL POWER MOSFET TRANSISTOR 50 AMPERE 60 VOLT N-CHANNEL POWER MOSFET „ 12 DESCRIPTION Thinkisemi 50N06 is three-terminal silicon device with current conduction capability of about 50A, fast switching speed. Low


    Original     		PDF 55NF06 50N06 U55NF06 P55NF06 F55NF06 D55NF06 O-220/TO-220F 55NF06 P55NF06 P55nf*06 Mosfet P55NF06

    ELM34804AA

    Abstract: No abstract text available
    Text: 双 N 沟道 MOSFET ELM34804AA-N •概要 ■特点 ELM34804AA-N 是 N 沟道低输入电容低工作电压、 •Vds=60V 低导通电阻的大电流 MOSFET，内藏有两个 MOSFET。 ·Id=4.5A ·Rds on < 55mΩ (Vgs=10V) ·Rds(on) < 75mΩ (Vgs=4.5V) ■绝对最大额定值


    Original     		PDF ELM34804AA-N P5506HVG AUG-19-2004 ELM34804AA

    ELM34405AA

    Abstract: No abstract text available
    Text: 单 P 沟道 MOSFET ELM34405AA-N •概要 ■特点 ELM34405AA-N 是 P 沟道低输入电容，低工作电 •Vds=-40V 压，低导通电阻的大电流 MOSFET。 ·Id=-5.5A ·Rds on < 55mΩ (Vgs=-10V) ·Rds(on) < 94mΩ (Vgs=-4.5V) ■绝对最大额定值


    Original     		PDF ELM34405AA-N P5504EVG ELM34405AA

    ELM32403LA

    Abstract: No abstract text available
    Text: 单 P 沟道 MOSFET ELM32403LA-S •概要 ■特点 ELM32403LA-S 是 P 沟道低输入电容，低工作电压， 低导通电阻的大电流 MOSFET。 •Vds=-40V ·Id=-8A ·Rds on < 55mΩ (Vgs=-10V) ·Rds(on) < 94mΩ (Vgs=-4.5V) ■绝对最大额定值


    Original     		PDF ELM32403LA-S P5504EDG O-252 AUG-19-2004 ELM32403LA

    ELM34404AA

    Abstract: No abstract text available
    Text: 单 N 沟道 MOSFET ELM34404AA-N •概要 ■特点 ELM34404AA-N 是 N 沟道低输入电容，低工作电压， •Vds=60V 低导通电阻的大电流 MOSFET。 ·Id=5.5A ·Rds on < 55mΩ (Vgs=10V) ·Rds(on) < 75mΩ (Vgs=4.5V) ■绝对最大额定值 项目


    Original     		PDF ELM34404AA-N P5506BVG SEP-30-2004 ELM34404AA

    Untitled

    Abstract: No abstract text available
    Text: デュアルパワー N チャンネル MOSFET ELM34804AA-N •概要 ■特長 ELM34804AA-N は低入力容量 低電圧駆動、 低 オン抵抗という特性を備えた大電流デュアルパワー ・ Vds=60V ・ Id=4.5A MOSFET です。 ・ Rds on < 55mΩ (Vgs=10V)


    Original     		PDF ELM34804AA-N P5506HVG AUG-19-2004

    STP55NE06

    Abstract: P55NE06 P55NE morocco P55NE06 p55ne0 P55NE06FP STP55NE06FP
    Text: STP55NE06 STP55NE06FP N - CHANNEL ENHANCEMENT MODE ” SINGLE FEATURE SIZE ” POWER MOSFET TYPE V DSS R DS on ID ST P55NE06 ST P55NE06FP 60 V 60 V < 0.022 Ω < 0.022 Ω 55 A 30 A • ■ ■ ■ ■ ■ TYPICAL RDS(on) = 0.019 Ω EXCEPTIONAL dv/dt CAPABILITY


    Original     		PDF STP55NE06 STP55NE06FP P55NE06 P55NE06FP STP55NE06 P55NE06 P55NE morocco P55NE06 p55ne0 P55NE06FP STP55NE06FP

    mother board intel block diagram

    Abstract: PC MOTHERBOARD ibm rev 1.2 US2075 US2075CM IRL3103S IRL3303 P54C P55C US2075CT pc MOTHERBOARD intel circuit diagram
    Text: US2075 PWM SWITCHER CONTROLLER & 7.5A LOW DROPOUT REGULATOR COMBO PATENT PENDING FEATURES DESCRIPTION The US2075 eliminates the need for a seperate switching controller IC Minimum part count allows lower system cost Fixed 3.30V/7.5A LDO on board On board MOSFET driver


    Original     		PDF US2075 US2075 P55CTM O0805 6MV1500GX, 1500uF EEUFA1A681L, 680uF mother board intel block diagram PC MOTHERBOARD ibm rev 1.2 US2075CM IRL3103S IRL3303 P54C P55C US2075CT pc MOTHERBOARD intel circuit diagram

    P55 MOSFET

    Abstract: MIC94062BC6 MIC94062YC6 MIC94060BC6 MIC94063YMT MIC94060YC6 MIC94061YC6 MIC94061YMT free pdf download P55 MOSFET MIC94060
    Text: MIC94060/61/62/63 High Side Power Switches General Description Features The MIC94060-63 are high-side load switches designed for operation between 1.7V to 5.5V. The devices contain a low on-resistance P-channel MOSFET that supports over 2A of continuous current. The MIC94061and


    Original     		PDF MIC94060/61/62/63 MIC94060-63 MIC94061and MIC94063 MIC94060-61 MIC94062-63 M9999-022607 P55 MOSFET MIC94062BC6 MIC94062YC6 MIC94060BC6 MIC94063YMT MIC94060YC6 MIC94061YC6 MIC94061YMT free pdf download P55 MOSFET MIC94060

    STB55NF06

    Abstract: p55nf06 Mosfet P55NF06 P55nf B55NF06 P55nf*06 for p55nf06 "p55nf06" b55nf p55nf06fp
    Text: STB55NF06 - STB55NF06-1 STP55NF06 - STP55NF06FP N-channel 60V - 0.015Ω - 50A - D2PAK/I2PAK/TO-220/TO-220FP STripFET II Power MOSFET General features Type VDSS RDS on ID STB55NF06 60V <0.018Ω 50A STB55NF06-1 60V <0.018Ω 50A STP55NF06 60V <0.018Ω


    Original     		PDF STB55NF06 STB55NF06-1 STP55NF06 STP55NF06FP D2PAK/I2PAK/TO-220/TO-220FP STB55NF06 STP55NF06 O-220 p55nf06 Mosfet P55NF06 P55nf B55NF06 P55nf*06 for p55nf06 "p55nf06" b55nf p55nf06fp

    Untitled

    Abstract: No abstract text available
    Text: MIC94060/61/62/63 High Side Power Switches General Description Features The MIC94060-63 are high-side load switches designed for operation between 1.7V to 5.5V. The devices contain a low on-resistance P-channel MOSFET that supports over 2A of continuous current. The MIC94061and


    Original     		PDF MIC94060/61/62/63 MIC94060-63 MIC94061and MIC94063 MIC94060-61 MIC94062-63 M9999-022607

    P55 MOSFET

    Abstract: MIC94060YML marking P55 free pdf download P55 MOSFET MIC94060 MIC94060BC6 MIC94061 MIC94061BC6 MIC94063
    Text: MIC94060/61/62/63 High Side Power Switches General Description The MIC94060-63 are high-side load switches designed for operation between 1.7V to 5.5V. The devices contain a low on-resistance P-channel MOSFET that supports over 2A of continuous current. The MIC94061and


    Original     		PDF MIC94060/61/62/63 MIC94060-63 MIC94061and MIC94063 MIC94060-61 MIC94062-63 M9999-082406 P55 MOSFET MIC94060YML marking P55 free pdf download P55 MOSFET MIC94060 MIC94060BC6 MIC94061 MIC94061BC6

    P55NF06

    Abstract: p55nf06fp P55nf*06 for p55nf06 b55nf
    Text: STB55NF06 - STB55NF06-1 STP55NF06 - STP55NF06FP N-CHANNEL 60V -0.015Ω - 50A TO-220/FP/D²/I²PAK STripFET II MOSFET Table 1: General Features TYPE VDSS STB55NF06 STB55NF06-1 STP55NF06FP STP55NF06 60 V 60 V 60 V 60 V Figure 1: Package RDS on <0.018 <0.018


    Original     		PDF STB55NF06 STB55NF06-1 STP55NF06 STP55NF06FP O-220/FP/DÂ STB55NF06 STP55NF06 P55NF06 p55nf06fp P55nf*06 for p55nf06 b55nf

    p5506hvg

    Abstract: No abstract text available
    Text: Dual N-channel MOSFET ELM34804AA-N •General description ■Features ELM34804AA-N uses advanced trench technology to provide excellent Rds on , low gate charge and low gate resistance. • • • • Vds=60V Id=4.5A Rds(on) < 55mΩ (Vgs=10V) Rds(on) < 75mΩ (Vgs=4.5V)


    Original     		PDF ELM34804AA-N ELM34804AA-N P5506HVG AUG-19-2004 p5506hvg

    Untitled

    Abstract: No abstract text available
    Text: Single N-channel MOSFET ELM34404AA-N •General description ■Features ELM34404AA-N uses advanced trench technology to provide excellent Rds on , low gate charge and low gate resistance. • • • • Vds=60V Id=5.5A Rds(on) < 55mΩ (Vgs=10V) Rds(on) < 75mΩ (Vgs=4.5V)


    Original     		PDF ELM34404AA-N ELM34404AA-N P5506BVG SEP-30-2004

    Untitled

    Abstract: No abstract text available
    Text: Single P-channel MOSFET ELM32403LA-S •General description ■Features ELM32403LA-S uses advanced trench technology to provide excellent Rds on , low gate charge and low gate resistance. • • • • Vds=-40V Id=-8A Rds(on) < 55mΩ (Vgs=-10V) Rds(on) < 94mΩ (Vgs=-4.5V)


    Original     		PDF ELM32403LA-S ELM32403LA-S P5504EDG O-252 AUG-19-2004

    P5504EDG

    Abstract: No abstract text available
    Text: Single P-channel MOSFET ELM32403LA-S •General description ■Features ELM32403LA-S uses advanced trench technology to provide excellent Rds on , low gate charge and low gate resistance. • • • • Vds=-40V Id=-8A Rds(on) < 55mΩ (Vgs=-10V) Rds(on) < 94mΩ (Vgs=-4.5V)


    Original     		PDF ELM32403LA-S ELM32403LA-S P5504EDG O-252 AUG-19-2004 P5504EDG

    transistor 123 DL

    Abstract: No abstract text available
    Text: Single P-channel MOSFET ELM34405AA-N •General description ■Features ELM34405AA-N uses advanced trench technology to provide excellent Rds on , low gate charge and low gate resistance. • • • • Vds=-40V Id=-5.5A Rds(on) < 55mΩ (Vgs=-10V) Rds(on) < 94mΩ (Vgs=-4.5V)


    Original     		PDF ELM34405AA-N ELM34405AA-N P5504EVG transistor 123 DL

    p55nf06

    Abstract: Mosfet P55NF06 B55NF06 P55NF06FP for p55nf06 OF P55NF06 "p55nf06" P55nf06 MOSFET P55nf b55nf
    Text: STB55NF06 - STB55NF06-1 STP55NF06 - STP55NF06FP N-CHANNEL 60V -0.015Ω - 50A TO-220/FP/D²/I²PAK STripFET II MOSFET Table 1: General Features Figure 1: Package TYPE VDSS RDS on ID STB55NF06 STB55NF06-1 STP55NF06FP STP55NF06 60V 60V 60V 60V <0.018Ω <0.018Ω


    Original     		PDF STB55NF06 STB55NF06-1 STP55NF06 STP55NF06FP O-220/FP/D STP55NF06FP STP55NF06 O-220 p55nf06 Mosfet P55NF06 B55NF06 P55NF06FP for p55nf06 OF P55NF06 "p55nf06" P55nf06 MOSFET P55nf b55nf

    P5506BDG

    Abstract: No abstract text available
    Text: Single N-channel MOSFET ELM32400LA-S •General description ■Features ELM32400LA-S uses advanced trench technology to provide excellent Rds on , low gate charge and low gate resistance. • • • • Vds=60V Id=10A Rds(on) < 55mΩ (Vgs=10V) Rds(on) < 75mΩ (Vgs=4.5V)


    Original     		PDF ELM32400LA-S ELM32400LA-S P5506BDG O-252 AUG-19-2004 P5506BDG

    Untitled

    Abstract: No abstract text available
    Text: Dual N-channel MOSFET ELM34804AA-N •General description ■Features ELM34804AA-N uses advanced trench technology to provide excellent Rds on , low gate charge and low gate resistance. • • • • Vds=60V Id=4.5A Rds(on) < 55mΩ (Vgs=10V) Rds(on) < 75mΩ (Vgs=4.5V)


    Original     		PDF ELM34804AA-N ELM34804AA-N P5506HVG AUG-19-2004

    free P55 MOSFET

    Abstract: P55 MOSFET free pdf download P55 MOSFET MIC94061YMT marking P55 transistor MIC94060BC6 MIC94060YC6 MIC94060YMt MIC94062BC6 MIC94061YC6
    Text: MIC94060/61/62/63 High Side Power Switches General Description Features The MIC94060-63 are high-side load switches designed for operation between 1.7V to 5.5V. The devices contain a low on-resistance P-channel MOSFET that supports over 2A of continuous current. The MIC94061 and


    Original     		PDF MIC94060/61/62/63 MIC94060-63 MIC94061 MIC94063 MIC94060-61 MIC94062-63 M9999-070910-E free P55 MOSFET P55 MOSFET free pdf download P55 MOSFET MIC94061YMT marking P55 transistor MIC94060BC6 MIC94060YC6 MIC94060YMt MIC94062BC6 MIC94061YC6

    p5504

    Abstract: No abstract text available
    Text: Single P-channel MOSFET ELM34405AA-N •General description ■Features ELM34405AA-N uses advanced trench technology to provide excellent Rds on , low gate charge and low gate resistance. • • • • Vds=-40V Id=-5.5A Rds(on) < 55mΩ (Vgs=-10V) Rds(on) < 94mΩ (Vgs=-4.5V)


    Original     		PDF ELM34405AA-N ELM34405AA-N P5504EVG p5504

    P55NE

    Abstract: p55ne0 P55NE06 P55NE06FP STP55NE06 P55n STP55NE06FP C3921 stp55ne
    Text: STP55NE06 STP55NE06FP N-CHANNEL 60V - 0.019 Ω - 55A TO-220/TO-220FP "SINGLE FEATURE SIZE " POWER MOSFET Figure 1. Package Table 1. General Features Type VDSS RDS on ID STP55NE06 60 V < 0.022 Ω 55 A STP55NE06FP 60 V < 0.022 Ω 30 A FEATURES SUMMARY


    Original     		PDF STP55NE06 STP55NE06FP O-220/TO-220FP O-220 P55NE p55ne0 P55NE06 P55NE06FP STP55NE06 P55n STP55NE06FP C3921 stp55ne