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    MOSFET P11NB40FP Search Results

    MOSFET P11NB40FP Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TCK424G Toshiba Electronic Devices & Storage Corporation MOSFET Gate Driver IC, 2.7 to 28 V, External MOSFET Gate drive / Inrush current reducing, WCSP6G Visit Toshiba Electronic Devices & Storage Corporation
    TCK425G Toshiba Electronic Devices & Storage Corporation MOSFET Gate Driver IC, 2.7 to 28 V, External MOSFET Gate drive / Inrush current reducing, WCSP6G Visit Toshiba Electronic Devices & Storage Corporation
    TCK423G Toshiba Electronic Devices & Storage Corporation MOSFET Gate Driver IC, 2.7 to 28 V, External MOSFET Gate drive / Inrush current reducing, WCSP6G Visit Toshiba Electronic Devices & Storage Corporation
    TCK422G Toshiba Electronic Devices & Storage Corporation MOSFET Gate Driver IC, 2.7 to 28 V, External MOSFET Gate drive / Inrush current reducing, WCSP6G Visit Toshiba Electronic Devices & Storage Corporation
    MG800FXF1JMS3 Toshiba Electronic Devices & Storage Corporation N-ch SiC MOSFET Module, 3300 V, 800 A, iXPLV, High-side: SiC SBD、Low-side: SiC MOSFET Visit Toshiba Electronic Devices & Storage Corporation

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    P11NB40

    Abstract: p11nb40f mosfet p11NB40Fp P11NB40FP p11nb4 p11nb STP11NB40 STP11NB40FP diode L2.8 STP11NB40F
    Text: STP11NB40 STP11NB40FP  N - CHANNEL 400V - 0.48Ω - 10.7A - TO-220/TO-220FP PowerMESH MOSFET TYPE V DSS R DS on ID ST P11NB40 ST P11NB40FP 400 V 400 V < 0.55 Ω < 0.55 Ω 10.7 A 6.0 A • ■ ■ ■ ■ TYPICAL RDS(on) = 0.48 Ω EXTREMELY HIGH dV/dt CAPABILITY


    Original     		STP11NB40 STP11NB40FP O-220/TO-220FP P11NB40 P11NB40FP P11NB40 p11nb40f mosfet p11NB40Fp P11NB40FP p11nb4 p11nb STP11NB40 STP11NB40FP diode L2.8 STP11NB40F PDF