d467
Abstract: No abstract text available
Text: MCA002 MECHANICAL DATA Dimensions in mm inches MULTI CHIP ARRAY 4 COMMON SOURCE P-CHANNEL MOSFETS AND 4 COMMON SOURCE N-CHANNEL FETS DESCRIPTION The MCA002 is a ceramic surface mount MOSFET array designed for high reliability applications. It contains 4 common source P Channel and 4 N Channel
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MCA002
MCA002
200mA
d467
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Untitled
Abstract: No abstract text available
Text: MCA002 MECHANICAL DATA Dimensions in mm inches MULTI CHIP ARRAY 4 COMMON SOURCE P-CHANNEL MOSFETS AND 4 COMMON SOURCE N-CHANNEL FETS DESCRIPTION The MCA002 is a ceramic surface mount MOSFET array designed for high reliability applications. It contains 4 common source P Channel and 4 N Channel
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MCA002
MCA002
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EIGHT p-channel MOSFET ARRAY
Abstract: DIODE G7 EIGHT MOSFET ARRAY G781-1 P-Channel 200V MOSFET AP0130NA AP0130 d5613 p channel mosfet 100v SOW-20
Text: AP0116 AP0132 AP0120 AP0140 AP0130 8-Channel MOSFET Array Monolithic P-Channel Enchancement Mode Ordering Information * * † Order Number / Package BVDSS/ BVDGS min RDS(ON) (max) ID(ON) (min) IDSS* @ VDS = -100V Max IDSS* @ VDS = -250V Max 18-Lead Plastic DIP
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AP0116
AP0132
AP0120
AP0140
AP0130
-100V
-250V
18-Lead
SOW-20*
-15mA
EIGHT p-channel MOSFET ARRAY
DIODE G7
EIGHT MOSFET ARRAY
G781-1
P-Channel 200V MOSFET
AP0130NA
AP0130
d5613
p channel mosfet 100v
SOW-20
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DIODE marking S4 23a
Abstract: No abstract text available
Text: APM2807QB P-Channel Enhancement Mode MOSFET with Schottky Diode Pin Description Features C G S MOSFET • -20V/-2.3A, RDS ON = 85mΩ(typ.) @ VGS= -4.5V RDS(ON)= 120mΩ(typ.) @ VGS= -2.5V • • • Super High Dense Cell Design A Reliable and Rugged NC D
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APM2807QB
-20V/-2
500mA.
APM2807
150oC
R0-2000
DIODE marking S4 23a
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Untitled
Abstract: No abstract text available
Text: Data Sheet No. PD 96944 IRIS-G5653 Features INTEGRATED SWITCHER • Oscillator is provided on the monolithic control with adopting On-ChipTrimming technology. • Small temperature characteristics variation by adopting a comparator to compensate for temperature on the control part.
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IRIS-G5653
100uA
G5653A
TG3A-1128
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G5653
Abstract: IRIS-G5653 SMPS Switcher IC of DIP 7 Converter Type SMPS 6 pin smps power control top mosfet IRIS-G5600
Text: Data Sheet No. PD 96944A IRIS-G5653 Features INTEGRATED SWITCHER • Oscillator is provided on the monolithic control with adopting On-ChipTrimming technology. Package Outline • Small temperature characteristics variation by adopting a comparator to compensate for temperature on the control part.
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6944A
IRIS-G5653
100uA
G5653
TG3A-1128
G5653
IRIS-G5653
SMPS Switcher IC of DIP 7
Converter Type SMPS
6 pin smps power control top mosfet
IRIS-G5600
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ap0420
Abstract: AP0432
Text: A P04 inc. G a te P ro te cte d Preliminary 8 Channel MOSFET Array Monolithic P-Channel Enchancement Mode Ordering Information Order Number / Package * t 700n -15mA -1 .5nA — AP0416NA AP0416WG AP0416ND -200V 600n -15mA — — AP0420NA — AP0420ND -300V
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-160V
-200V
-300V
-320V
-400V
-100V
-250V
18-Lead
AP0416NA
AP0420NA
ap0420
AP0432
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Untitled
Abstract: No abstract text available
Text: fà k S u p e rte x AP0116 AP0132 AP0120 AP0140 AP0130 in c . 8-Channel MOSFET Array Monolithic P-Channel Enchancement Mode Ordering Information _ Order Number / Package BVqgs min 11 BVDS9/ ^DS(O N) (max) loss* VDS= -100V Max loss* ® Vos -2S0V Max
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AP0116
AP0132
AP0120
AP0140
AP0130
-100V
18-Lead
SOW-20*
-160V
-15mA
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Untitled
Abstract: No abstract text available
Text: AP0116 AP0132 AP0120 AP0140 mm_ 8-Channel MOSFET Array Monolithic P-Channel Enchancement Mode Ordering Information Order Number / Package b v dss/ Plastic -250V Max Plastic DIP SOW-20* -1.5nA — AP0116NA AP0116W G AP0116ND -15mA — — AP0120NA — AP0120ND
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AP0116
AP0132
AP0120
AP0140
18-Lead
AP0116NA
AP0120NA
AP0130NA
AP0132NA
AP0140NA
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EIGHT p-channel MOSFET ARRAY
Abstract: AP0116NA AP0116NB AP0116ND AP0116WG AP0120NA AP0120NB AP0120ND SOW-20
Text: SUPERTEX INC Gl D e J fl773S‘lS_D0ai7b3 3 | ~ 8 Channel Power MOSFET Array Monolithic P-channel Enchancement Mode Ordering Information Order Number / Package BVDSS/ min ^DS(ON) (max) -160V -200V -300V -320V -400V 700n 600n 600n 700Q 700n SI b v dgs *DSS* @ ^DS =
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fl773aiS
-250V
18-Lead
SOW-20*
-160V
-15mA
AP0116NB
AP0116NA
AP0116WG
EIGHT p-channel MOSFET ARRAY
AP0116ND
AP0120NA
AP0120NB
AP0120ND
SOW-20
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Untitled
Abstract: No abstract text available
Text: SUPERTEX INC blE » fiTTBE'îS DDDaSin 3T1 ISTX AP04 V . Supertex inc. G ate Protected Preliminary 8 Channel MOSFET Array Monolithic P-Channel Enchancement Mode Ordering Information Order Number / Package BVoss/ BVoos min RDS(ON) (max) •dcon) (min) loss” V|)S =
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-100V
-250V
18-Lead
SOW-20*
-160V
-15mA
AP0416NA
AP0416WG
AP0416ND
-200V
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23p06
Abstract: No abstract text available
Text: O M 23P06ST O M 20P10ST O M 12P10ST O M 8P20ST O M 8P25ST O M 2P50ST Û M 23P 06S A O M 20P10SA O M 12P10SA O M 8P20SA O M 8P25SA OM 2P50SA POWER MOSFET IN HERMETIC ISOLATED JEDEC PACKAGE, P-CHANNEL 60V To 500V P-Ch annel MOSFET In A H e r m e tic Package
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23P06ST
20P10ST
12P10ST
8P20ST
8P25ST
2P50ST
20P10SA
12P10SA
8P20SA
8P25SA
23p06
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Untitled
Abstract: No abstract text available
Text: . yjj Supertex inc 8-Channel MOSFET Array Monolithic P-Channel Enchancement Mode Ordering Information_ O rd er N um b er / Package BV qqs m in If B V DSS/ F*ds(on) (m ax) I dss* V ds = -100V Max -160V 700Q -15mA -1.5nA
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AP0116WG
AP0132WG
AP0140W
AP0116ND
AP0120ND
AP0130ND
AP0132ND
AP0140ND
-160V
-200V
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EIGHT MOSFET ARRAY
Abstract: EIGHT n-channel MOSFET ARRAY
Text: A N 04 inc. G a te P ro te cte d Preliminary 8 Channel MOSFET Array Monolithic N-Channel Enchancement Mode Ordering Information Order Number / Package BVdss/ ^DS ON (min) 160V (max) 350n 200V 300V Plastic SOW-20* Diet — 18-Lead Plastic DIP AN0416NA AN0416WG
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18-Lead
AN0416NA
AN0420NA
AN0430NA
AN0432NA
AN0440NA
SOW-20*
AN0416WG
AN0416ND
AN0420ND
EIGHT MOSFET ARRAY
EIGHT n-channel MOSFET ARRAY
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Untitled
Abstract: No abstract text available
Text: OM23P06ST OM20P10ST OM12P10ST OM8P20ST OM8P25ST OM2P50ST OM23P06SA OM20P10SA OM12P10SA OM8P20SA OM8P25SA OM2P50SA POWER MOSFET IN HERMETIC ISOLATED JEDEC PACKAGE, P-CHANNEL 60V To 500V P -C h a n n e l M O S F E T In A H erm etic P a ck a g e FEATURES •
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OM23P06ST
OM20P10ST
OM12P10ST
OM8P20ST
OM8P25ST
OM2P50ST
OM23P06SA
OM20P10SA
OM12P10SA
OM8P20SA
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IRF7205
Abstract: No abstract text available
Text: P D -9 .1 1 0 4 B International i R Rectifier IRF7205 H EXFET P o w er M O S F E T • Adavanced Process Technology • Ultra Low On-Resistance • P-Channel MOSFET • Surface Mount • Available in Tape & Reel • Dynamic dv/dt Rating • Fast Switching
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IRF7205
IRF7205
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Untitled
Abstract: No abstract text available
Text: 4055452 Q Q I S n b G54 • INR International Rectifier HEXFET Power MOSFET • • • • • • • PD-9.837 IRFI9540G INTERNATIONAL RECTIFIER Isolated Package High Voltage lsolation= 2.5KVRMS Sink to Lead Creepage Dist.= 4.8mm P-Channel 175°C Operating Temperature
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IRFI9540G
O-220
\50KQ
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g118ap
Abstract: G118 diode EE d129 st s466
Text: W T Siliconix J Q P incorporated 1 Q • ■w Monolithic 6-Channel Enhancement-type MOSFET Switch FEATURES BENEFITS APPLICATIONS • Internal Zener Diode Protects the Gate • • Switching Analog Signals • Multiplexing • Six Switches Per Chip • Designed to Operate with
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G118AL
Abstract: No abstract text available
Text: w r J j P S ilic o n * in c o r p o r a te d f i l I 1 Q I W Monolithic 6-Channel Enhancement-type MOSFET Switch FEATURES BENEFITS APPLICATIONS • Internal Z en e r Diode Protects th e Gate • • Switching Analog Signals • M ultiplexing • Six Sw itches Per Chip
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2-125p85Â
G118AL
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Untitled
Abstract: No abstract text available
Text: Temic SÌ4559EY S e m i c o n d u c t o r s Dual N- and P-Channel 60-Y, 175°C Rated MOSFET Product Summary V d s V N-Channel r DS(on) ( ß ) I d (A ) 0.055 @ V os = 10 V ± 4.5 0.075 @ VGS = 4.5 V ± 3 .9 0.120 @ VGs = -10 V ± 3.1 0.150 @ VGS = -4 .5 V
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4559EY
S-49520--
18-Dec-96
18-Dec-%
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Untitled
Abstract: No abstract text available
Text: bOE ]> • SEHELAB 0133107 □□□G53‘ì 711 ■SMLB PLC r r rT ' - ' 3 ^ ' Z 3 M A Gl\IA TEC BUZ 9 0 5 b u z 90S NEW PRODUCT SILICON P-CHANNEL POWER MOSFET DESIGNED FOR USE AS COMPLEMENTARY PAIR FOR HIGH QUALITY, HIGH POWER AMPLIFIER APPLICATION FEATURES
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BUZ900
BUZ901
BUZ900D
BUZ905D
BUZ901D
BUZ906D
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Untitled
Abstract: No abstract text available
Text: □ IXYS Standard Power MOSFET IRFP250 VDSS = 200 V ID cont = 30 A P DS(on) = 85 mQ N-Channel Enhancement Mode Symbol Test Conditions V DSS ^ V DGR T.J = 25°C to 150°C;’ v GS Maximum Ratings = 25 °C to 150°C 200 V 200 V Continuous ±20 V v GSM Transient
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IRFP250
O-247
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N-Channel Depletion-Mode MOSFET
Abstract: No abstract text available
Text: LND250 P relim ina ry N-Channel Depletion-Mode MOSFET Ordering Information Order Num ber / Package Product marking for SOT-23: min TO-236AB* NDE* 1.0mA LND250K1 where * = 2-week alpha date code BVd s x / ^DS(ON) Idss B V dgx (max) 500V 1.0KQ *S am e as SO T-23. All units shipped on 3,000 piece carrier tape reels.
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LND250
O-236AB*
LND250K1
OT-23:
300jxs
N-Channel Depletion-Mode MOSFET
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41113
Abstract: No abstract text available
Text: T e m ic siliconi»_SÌ6955DQ Dual P-Channel Enhancement-Mode MOSFET Product Summary VDs V H)S(on) (Q ) I d (A) 0.085 @ V G S= - 1 0 V ±2.5 0.19 @ V os = -4 .5 V ±1.8 30 Si o o TSSOP-8 D, C I s. C I s. C I G, I Z T | D2 • S Í6 9 5 5 D Q
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6955DQ
S-41113--
41113
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