24v 60a mosfet
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD Preliminary UTT60P03 Power MOSFET -60A, -30V, P-CHANNEL POWER MOSFETS DESCRIPTION The UTC UTT60P03 is a P-channel power MOSFET using UTC’s advanced technology to provide the customers with high switching speed and a minimum on-state resistance and it can also withstand
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UTT60P03
UTT60P03
O-252
UTT60P03L-TN3-R
QW-R502-605
24v 60a mosfet
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Untitled
Abstract: No abstract text available
Text: AP70T03GS/P RoHS-compliant Product Advanced Power Electronics Corp. Simple Drive Requirement N-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS D 30V RDS ON Low Gate Charge Fast Switching Speed ID G 9m 60A S Description G D Advanced Power MOSFETs from APEC provide the
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AP70T03GS/P
O-263
AP70T03GP)
O-220
100ms
Fig10.
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AP70T03GP
Abstract: AP70T03GS
Text: AP70T03GS/P RoHS-compliant Product Advanced Power Electronics Corp. ▼ Simple Drive Requirement N-CHANNEL ENHANCEMENT MODE POWER MOSFET D ▼ Low Gate Charge ▼ Fast Switching Speed BVDSS 30V RDS ON 9mΩ ID G 60A S Description Advanced Power MOSFETs from APEC provide the
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AP70T03GS/P
O-263
AP70T03GP)
O-220
100ms
Fig10.
AP70T03GP
AP70T03GS
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Untitled
Abstract: No abstract text available
Text: AP70T03AS/P Advanced Power Electronics Corp. ▼ Simple Drive Requirement N-CHANNEL ENHANCEMENT MODE POWER MOSFET D ▼ Low Gate Charge ▼ Fast Switching BVDSS 30V RDS ON 9mΩ ID G 60A S Description G D The Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching,
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AP70T03AS/P
O-263
AP70T03AP)
O-220
100us
100ms
Fig10.
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Untitled
Abstract: No abstract text available
Text: GFP60N03 N-Channel Enhancement-Mode MOSFET VDS 30V RDS ON 11mΩ ID 60A H C N ct E ET u R d T NF ro P New GE TM TO-220AB 0.185 (4.70) 0.170 (4.31) 0.154 (3.91) Dia. 0.142 (3.60) 0.415 (10.54) Max. 0.410 (10.41) 0.350 (8.89) G PIN D S 0.155 (3.93) 0.134 (3.40)
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GFP60N03
O-220AB
100ms
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GFP60N03
Abstract: GFP60N
Text: GFP60N03 N-Channel Enhancement-Mode MOSFET VDS 30V RDS ON 11mΩ ID 60A H C N ct E ET u R d T ENF ro P New G TO-220AB 0.185 (4.70) 0.170 (4.31) 0.154 (3.91) Dia. 0.142 (3.60) 0.415 (10.54) Max. 0.410 (10.41) 0.350 (8.89) G PIN D S 0.155 (3.93) 0.134 (3.40)
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GFP60N03
O-220AB
100ms
GFP60N03
GFP60N
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GFB60N03
Abstract: S1001M
Text: GFB60N03 N-Channel Enhancement-Mode MOSFET VDS 30V RDS ON 11mΩ ID 60A H C N t E ET c u R d T ENF ro P G New D TO-263AB 0.160 (4.06) 0.190 (4.83) 0.380 (9.65) 0.420 (10.67) G S 0.045 (1.14) 0.055 (1.40) 0.21 (5.33) Min. 0.42 (10.66) D 0.320 (8.13) 0.360 (9.14)
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GFB60N03
O-263AB
100ms
GFB60N03
S1001M
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Untitled
Abstract: No abstract text available
Text: GFB60N03 N-Channel Enhancement-Mode MOSFET VDS 30V RDS ON 11mΩ ID 60A H C N t E ET c u R d T NF ro P GE New D TM TO-263AB 0.160 (4.06) 0.190 (4.83) 0.380 (9.65) 0.420 (10.67) G S 0.045 (1.14) 0.055 (1.40) 0.21 (5.33) Min. 0.42 (10.66) D 0.320 (8.13) 0.360 (9.14)
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GFB60N03
O-263AB
O-263
100ms
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MOSFET N-CHANNEL 60v 60A
Abstract: 60n06 60n06l
Text: UNISONIC TECHNOLOGIES CO., LTD 60N06 Power MOSFET 60A, 60V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 60N06 is N-channel enhancement mode power field effect transistors with stable off-state characteristics, fast switching speed, low thermal resistance, usually used at telecom
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60N06
60N06
115pF
QW-R502-121
MOSFET N-CHANNEL 60v 60A
60n06l
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IRU1239SC
Abstract: iru1239 Full-bridge IR2110 Class-D ir2010 PWM IR2112 IRF540 ir21065 full bridge ir2110 h-bridge irfz44n IRVCM10A 600V 300A igbt dc to dc boost converter
Text: SHENZHEN SHOUHE TECHNOLOGY CO., LTD. TEL: 0755-8380 8450 FAX: 0755-8380 8425 Part Information PartNo Function Line Pkg 100MT160PAPBF Discrete IRCI Module MTP 100MT160PA Discrete IRCI Module MTP 100MT160PBPBF Discrete IRCI Module MTP IRCI Module MTP IRCI Module MTK
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100MT160PAPBF
100MT160PA
100MT160PBPBF
IRU1239SC
iru1239
Full-bridge IR2110
Class-D ir2010
PWM IR2112 IRF540
ir21065
full bridge ir2110
h-bridge irfz44n
IRVCM10A
600V 300A igbt dc to dc boost converter
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IRF P CHANNEL MOSFET 200V 20A
Abstract: P Channel Power MOSFET IRF IRF P CHANNEL MOSFET N CHANNEL MOSFET 10A 1000V IRF P-Channel FET 200v 20A IRF P CHANNEL MOSFET 10A 100V p channel mosfet 100v 70a to-252 IRF P CHANNEL MOSFET 100v IRF P-Channel FET 100v IRF P CHANNEL MOSFET TO-252
Text: 30V 1000V 200V 100V 0.014Ω 60V RF1S9630SM Note 200V, 6.5A, 0.800Ω RF1S4N100SM 1000V, 4.3A, 3.500Ω RF1S630SM 200V, 9A, 0.400Ω 0A TO 10A S E M I C O N D U C TO R 3.500Ω 0.800Ω 0.500Ω 0.400Ω 0.18Ω 0.300Ω 0.200Ω 0.160Ω 0.080Ω 0.077Ω
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RF1S9630SM
RF1S4N100SM
RF1S630SM
RF1S70N06SM
RF1S70N03SM
O-263AB)
LC96586
IRF P CHANNEL MOSFET 200V 20A
P Channel Power MOSFET IRF
IRF P CHANNEL MOSFET
N CHANNEL MOSFET 10A 1000V
IRF P-Channel FET 200v 20A
IRF P CHANNEL MOSFET 10A 100V
p channel mosfet 100v 70a to-252
IRF P CHANNEL MOSFET 100v
IRF P-Channel FET 100v
IRF P CHANNEL MOSFET TO-252
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500W TRANSISTOR AUDIO AMPLIFIER
Abstract: IN5822 diode irfs6408 220V ac to 9V dc converter circuit DC 48v AC 220v 500w smps P-Channel MOSFET 800v SB550 transistor drive motor 10A with transistor P channel MOSFET P channel 600v 20a IGBT list of n channel power mosfet
Text: Power for Computing Analog Discrete Interface & Logic Power Solutions for • Conversion · Distribution · Management · Minimization There’s a lot more to power than power management. Optimizing system power in computing applications requires innovative products for power conversion, distribution,
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Power247TM,
500W TRANSISTOR AUDIO AMPLIFIER
IN5822 diode
irfs6408
220V ac to 9V dc converter circuit
DC 48v AC 220v 500w smps
P-Channel MOSFET 800v
SB550 transistor
drive motor 10A with transistor P channel MOSFET
P channel 600v 20a IGBT
list of n channel power mosfet
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9n90c
Abstract: 9n50c IGBT 20N50 kmb*050n60p 7N65C 5n50c smd diode S4 58a 2N60C 2N60 MOSFET SMPS str TV SMPS
Text: Power MOS -FET Selection Guide MOS-FET 2007. 2007. First First Version Version Http://www.kec.co.kr KEC-H Corp. Product classification First & Best First & Best MOSFET MOSFET SS-MOSFET MOSFET Trench TrenchMOSFET MOSFET Planar PlanarMOSFET MOSFET Pw Pw<<1W
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2N7000
2N7000A
2N7000K
70Max
45Max
55Max
80Max
9n90c
9n50c
IGBT 20N50
kmb*050n60p
7N65C
5n50c
smd diode S4 58a
2N60C
2N60 MOSFET SMPS
str TV SMPS
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mosfet 60v 60a
Abstract: No abstract text available
Text: FDB14AN06LA0_F085 N-Channel PowerTrench MOSFET 60V, 60A, 14.6mΩ Features Applications • r DS ON = 12.8mΩ (Typ.), VGS = 5V, ID = 60A • Motor / Body Load Control • Qg(tot) = 24nC (Typ.), VGS = 5V • ABS Systems • Low Miller Charge • Powertrain Management
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FDB14AN06LA0
O-263AB
mosfet 60v 60a
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TRIACS EQUIVALENT LIST
Abstract: 440v to 12v smps power supply REG IC 48V IN 12V 10A OUT 440v ac voltage regulator 440v to 12v smps power supply 50A dimmer diagrams IGBT FKPF12N60 24v 12v 20A regulator 600V igbt dc to dc buck converter 24V 10A SMPS
Text: FS8S0765RC The FS8S0765RC is a highly integrated off-line power switch FPS for CRT monitor fly-back power supply applications. This device integrates a fully avalanche-rated SenseFET (650V minimum breakdown rating) with a
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FS8S0765RC
new/fs8s0765rc
FS8S0765RC
ACE1502
FAN1655
FAN2534
FAN5098
Power247TM,
TRIACS EQUIVALENT LIST
440v to 12v smps power supply
REG IC 48V IN 12V 10A OUT
440v ac voltage regulator
440v to 12v smps power supply 50A
dimmer diagrams IGBT
FKPF12N60
24v 12v 20A regulator
600V igbt dc to dc buck converter
24V 10A SMPS
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9972gp
Abstract: 9972gs Advanced Power Electronics 9972gp 9972g 9972 marking codes transistors SSs AP9972GP AP9972
Text: AP9972GS/P RoHS-compliant Product Advanced Power Electronics Corp. N-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Low Gate Charge D ▼ Single Drive Requirement ▼ Surface Mount Package BVDSS 60V RDS ON 18mΩ ID 60A G S Description Advanced Power MOSFETs from APEC provide the designer with
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AP9972GS/P
O-263
AP9972GP)
O-263
9972GS
9972gp
9972gs
Advanced Power Electronics 9972gp
9972g
9972
marking codes transistors SSs
AP9972GP
AP9972
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IXDD504D2
Abstract: No abstract text available
Text: IXDD504/ IXDE504 4 Ampere Dual Low-Side Ultrafast MOSFET Drivers with Enable for fast, controlled shutdown Features General Description • Built using the advantages and compatibility of CMOS and IXYS HDMOSTM processes • Latch-Up Protected up to 4 Amps
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IXDD504/
IXDE504
1800pF
IXDD504
IXDE504
Edisonstrasse15
D-68623;
IXDD504D2
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B60NE06L
Abstract: b60ne JESD97 STB60NE06L-16 STB60NE06L-16T4
Text: STB60NE06L-16 N-channel 60V - 0.014Ω - 60A - D2PAK STripFET II Power MOSFET General features Type VDSS RDS on ID STB60NE06L-16 60V <0.016Ω 60A • Avalanche rugged technology ■ High current capability ■ Low gate charge ■ 175 °C operating temperature
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STB60NE06L-16
B60NE06L
b60ne
JESD97
STB60NE06L-16
STB60NE06L-16T4
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30V 20A 10KHz power MOSFET
Abstract: IXDD504 IXDD504D2 IXDD504PI driving mosfet/igbt with pulse transformer driver IXDD504SIA IXDE504 IXDE504PI IXDE504SIA IXDD504SI
Text: IXDD504/ IXDE504 4 Ampere Dual Low-Side Ultrafast MOSFET Drivers with Enable for fast, controlled shutdown Features General Description • Built using the advantages and compatibility of CMOS and IXYS HDMOSTM processes • Latch-Up Protected up to 4 Amps
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IXDD504/
IXDE504
1800pF
IXDD504
IXDE504
Edisonstrasse15
D-68623;
30V 20A 10KHz power MOSFET
IXDD504D2
IXDD504PI
driving mosfet/igbt with pulse transformer driver
IXDD504SIA
IXDE504PI
IXDE504SIA
IXDD504SI
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Untitled
Abstract: No abstract text available
Text: STP60NE03L-12 N - CHANNEL 30V - 0.009 i l - 60A - T0-220 STripFET POWER MOSFET TYP E S T P 6 0 N E 0 3 L -1 2 • . . . . . . . V R d S o ii Id < 0.0 1 2 Q. 60 A dss 30 V TYPICAL R D S (on) = 0.009 A VALANCE RUGGED TECHNOLOGY 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100°C
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STP60NE03L-12
T0-220
O-220
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Untitled
Abstract: No abstract text available
Text: <¿±2 G e n e r a l v S e m ic o n d u c t o r GFP60N03 N-Channel Enhancement-Mode MOSFET V ds 30V R d S ON 11 mí2 I d 60A Features • Advanced Trench Process Technology • High Density Cell Design for Ultra Low On-Resistance • Specially Designed for Low Voltage DC/DC
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GFP60N03
O-220AB
MIL-STD-750,
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Untitled
Abstract: No abstract text available
Text: SSF17N 60A Advanced Power MOSFET FEATURES • ■ ■ ■ ■ ■ ■ b v dss Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 25 uA M ax @ VDS= 600V
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SSF17N
SSF17N60A
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Untitled
Abstract: No abstract text available
Text: I , I PD-91811 International 3BR Rectifier IR F B 9N 60A HEXFET Power MOSFET • • • • • Dynamic dv/dt Rating Repetitive Avalanche Rated Fast Switching Ease of Paraleling Simple Drive Requirements Description Third Generation HEXFETs from International Rectifier provide the designer
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PD-91811
O-220
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Untitled
Abstract: No abstract text available
Text: SSP1N60A Advanced Power MOSFET FEATURES • ■ ■ ■ ■ ■ B BVpss = 600 V Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 25 pA M ax @ VM = 600V
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SSP1N60A
O-220
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