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    MOSFET N Search Results

    MOSFET N Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TCK424G Toshiba Electronic Devices & Storage Corporation MOSFET Gate Driver IC, 2.7 to 28 V, External MOSFET Gate drive / Inrush current reducing, WCSP6G Visit Toshiba Electronic Devices & Storage Corporation
    TCK425G Toshiba Electronic Devices & Storage Corporation MOSFET Gate Driver IC, 2.7 to 28 V, External MOSFET Gate drive / Inrush current reducing, WCSP6G Visit Toshiba Electronic Devices & Storage Corporation
    TCK423G Toshiba Electronic Devices & Storage Corporation MOSFET Gate Driver IC, 2.7 to 28 V, External MOSFET Gate drive / Inrush current reducing, WCSP6G Visit Toshiba Electronic Devices & Storage Corporation
    TCK422G Toshiba Electronic Devices & Storage Corporation MOSFET Gate Driver IC, 2.7 to 28 V, External MOSFET Gate drive / Inrush current reducing, WCSP6G Visit Toshiba Electronic Devices & Storage Corporation
    MG800FXF1JMS3 Toshiba Electronic Devices & Storage Corporation N-ch SiC MOSFET Module, 3300 V, 800 A, iXPLV, High-side: SiC SBD、Low-side: SiC MOSFET Visit Toshiba Electronic Devices & Storage Corporation
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    MOSFET N Price and Stock

    IXYS Corporation IXFH26N50P

    MOSFETs HiPERFET Id26 BVdass500
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    TTI IXFH26N50P Tube 1,140 30
    • 1 -
    • 10 -
    • 100 $4.93
    • 1000 $4.03
    • 10000 $4.03
    		Buy Now

    IXYS Corporation IXFX64N50P

    MOSFETs 64.0 Amps 500 V 0.09 Ohm Rds
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    TTI IXFX64N50P Tube 600 30
    • 1 -
    • 10 -
    • 100 $10.55
    • 1000 $10.34
    • 10000 $10.34
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    IXYS Corporation IXFH52N30P

    MOSFETs 52 Amps 300V 0.066 Rds
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    TTI IXFH52N30P Tube 300 30
    • 1 -
    • 10 -
    • 100 $5.53
    • 1000 $5.32
    • 10000 $5.21
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    IXYS Corporation IXFK140N30P

    MOSFETs 140 Amps 300V 0.024 Ohms Rds
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    TTI IXFK140N30P Tube 300 25
    • 1 -
    • 10 -
    • 100 $13.48
    • 1000 $13.48
    • 10000 $13.48
    		Buy Now

    IXYS Corporation IXFH22N50P

    MOSFETs 500V 22A
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    TTI IXFH22N50P Tube 300 30
    • 1 -
    • 10 -
    • 100 $3.92
    • 1000 $3.22
    • 10000 $3.11
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    Find more MOSFET N price and stock on Findchips.com

    MOSFET N Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    Untitled

    Abstract: No abstract text available
    Text: US6M2 Transistors 2.5V Drive Nch+Pch MOSFET US6M2 zStructure Silicon N-channel MOSFET / Silicon P-channel MOSFET zDimensions Unit : mm 0.2Max. TUMT6 zFeatures 1) Nch MOSFET and Pch MOSFET are put in TUMT6 package. 2) High-speed switching, low On-resistance.


    Original     		PDF

    20V P-Channel Power MOSFET

    Abstract: US6M2
    Text: US6M2 Transistors 2.5V Drive Nch+Pch MOSFET US6M2 zStructure Silicon N-channel MOSFET / Silicon P-channel MOSFET zDimensions Unit : mm 0.2Max. TUMT6 zFeatures 1) Nch MOSFET and Pch MOSFET are put in TUMT6 package. 2) High-speed switching, low On-resistance.


    Original     		PDF

    Untitled

    Abstract: No abstract text available
    Text: 1.5V Drive Nch+Pch MOSFET US6M11 zStructure Silicon N-channel MOSFET / Silicon P-channel MOSFET zDimensions Unit : mm 0.2Max. TUMT6 zFeatures 1) Nch MOSFET and Pch MOSFET are put in TUMT6 package. 2) Low on-resistance. 3) Low voltage drive (1.5V drive).


    Original     		US6M11 R0039A PDF

    Untitled

    Abstract: No abstract text available
    Text: 1.2V Drive Nch+Pch MOSFET EM6M2 zStructure Silicon N-channel MOSFET / Silicon P-channel MOSFET zDimensions Unit : mm EMT6 zFeatures 1) Nch MOSFET and Pch MOSFET are put in EMT6 package. 2) High-speed switching. 3) Low voltage drive (1.2V drive). 4) Built-in G-S Protection Diode.


    Original     		R0039A PDF

    Untitled

    Abstract: No abstract text available
    Text: 1.2V Drive Nch+Pch MOSFET EM6M2 zDimensions Unit : mm zStructure Silicon N-channel MOSFET / Silicon P-channel MOSFET EMT6 zFeatures 1) Nch MOSFET and Pch MOSFET are put in EMT6 package. 2) High-speed switching. 3) Low voltage drive (1.2V drive). 4) Built-in G-S Protection Diode.


    Original     		R0039A PDF

    fet_11100.0

    Abstract: No abstract text available
    Text: Category: MOSFET CIRCUIT IDEAS FOR DESIGNERS Basic MOSFET / EPAD Schematic no. fet_11100.0 MOSFET Inverter Circuit Description This circuit shows a basic MOSFET or EPAD MOSFET inverter circuit. The drain terminal is the output and the gate terminal is the input. The output voltage VO is determined by the input voltage


    Original     		PDF

    MOSFET P-channel SOT-23

    Abstract: NTD80N02 NTD18N06 NTMS3P03R2 MLD1N06CL NTHD5904N
    Text: Power MOSFET Numeric Data Sheet Listing Chapter 1: Power MOSFET Data Sheets Device Function Page 2N7000 . . . . . . . . . . . . . . . . . . . . . Small Signal MOSFET 200 mAmps, 60 Volts . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 26


    Original     		2N7000 2N7002L MOSFET60 OT-23 BS107, BS107A BS108 BS170 NUD3124 NUD3160 MOSFET P-channel SOT-23 NTD80N02 NTD18N06 NTMS3P03R2 MLD1N06CL NTHD5904N PDF

    mosfet inverter

    Abstract: MOSFET MOSFET pA leakage voltage inverter schematic mosfet INVERTER applications circuit ideas LOW R MOSFET
    Text: CIRCUIT IDEAS FOR DESIGNERS Category: MOSFET Schematic no. fet_11100.0 Basic MOSFET / EPAD  MOSFET Inverter Circuit Description This circuit shows a basic MOSFET or EPAD MOSFET inverter circuit. The drain terminal is the output and the gate terminal is the input. The output voltage VO is determined by the input voltage


    Original     		ALD1108xx, ALD1109xx, mosfet inverter MOSFET MOSFET pA leakage voltage inverter schematic mosfet INVERTER applications circuit ideas LOW R MOSFET PDF

    Untitled

    Abstract: No abstract text available
    Text: LM2725,LM2726 LM2725/LM2726 High Speed Synchronous MOSFET Drivers Literature Number: SNVS144B LM2725/LM2726 High Speed Synchronous MOSFET Drivers General Description The LM2725/LM2726 is a family of dual MOSFET drivers that drive both the top MOSFET and bottom MOSFET in a pushpull structure simultaneously. It takes a logic level PWM input


    Original     		LM2725 LM2726 LM2725/LM2726 SNVS144B LM272/clocks PDF

    2N7225U

    Abstract: SMD1P IRFN250 JANTX2N7225U JANTXV2N7225U mosfet ir 250 n 2n7225
    Text: PD-91549B IRFN250 JANTX2N7225U HEXFET POWER MOSFET JANTXV2N7225U [REF:MIL-PRF-19500/592] N - CHANNEL Ω MOSFET 200 Volt, 0.100Ω HEXFET® power MOSFET technology is the key to InternationalRectifier’s advanced line of power MOSFET transistors. The efficient geometry


    Original     		PD-91549B IRFN250 JANTX2N7225U JANTXV2N7225U MIL-PRF-19500/592] 2N7225U SMD1P IRFN250 JANTX2N7225U JANTXV2N7225U mosfet ir 250 n 2n7225 PDF

    4422 mosfet

    Abstract: MOSFET 4420 Matching MOSFET Drivers to MOSFETs parallel mosfet 4469 mosfet use of zener diode 4420 mosfet mosfet 4468 4422 dual mosfet irf4501
    Text: APPLICATION NOTE 30 MATCHING MOSFET DRIVERS TO MOSFETs MATCHING MOSFET DRIVERS TO MOSFETs AN-30 INTRODUCTION V TelCom offers many sizes of MOSFET drivers. This allows the designer to best match the switching performance of the driver/MOSFET to the application.


    Original     		AN-30 TC4424 4422 mosfet MOSFET 4420 Matching MOSFET Drivers to MOSFETs parallel mosfet 4469 mosfet use of zener diode 4420 mosfet mosfet 4468 4422 dual mosfet irf4501 PDF

    2n7224U

    Abstract: IRFN150 JANTX2N7224U JANTXV2N7224U
    Text: PD-91547B IRFN150 JANTX2N7224U JANTXV2N7224U HEXFET POWER MOSFET [REF:MIL-PRF-19500/592] N - CHANNEL Ω MOSFET 100Volt, 0.070Ω HEXFET® power MOSFET technology is the key to InternationalRectifier’s advanced line of power MOSFET transistors. The efficient geometry


    Original     		PD-91547B IRFN150 JANTX2N7224U JANTXV2N7224U MIL-PRF-19500/592] 100Volt, 2n7224U IRFN150 JANTX2N7224U JANTXV2N7224U PDF

    "RF MOSFETs"

    Abstract: "RF MOSFET" 731 MOSFET IXZ308N120 mosfet 440 mhz MOSFET RF POWER
    Text: IXZ308N120 Z-MOS RF Power MOSFET N-Channel Enhancement Mode Linear Switch 175MHz Mode RFRF MOSFET MOSFET Lo Capacitance Low CapacitanceZ-MOS Z-MOS MOSFET MOSFETProcess Process TMTM Optimized for RF Linear Operation Operation Ideal for Class AB C, D, & C, & EBroadcast


    Original     		IXZ308N120 175MHz IXZ308N120 dsIXZ308N12 "RF MOSFETs" "RF MOSFET" 731 MOSFET mosfet 440 mhz MOSFET RF POWER PDF

    Untitled

    Abstract: No abstract text available
    Text: FDH210N08 N-Channel UniFETTM MOSFET 75 V, 210 A, 5.5 mΩ Features Description UniFETTM MOSFET is Fairchild Semiconductor’s high voltage MOSFET family based on planar stripe and DMOS technology. This MOSFET is tailored to reduce on-state resistance, and to


    Original     		FDH210N08 PDF

    international rectifier

    Abstract: IRFM260 4.5v to 100v input regulator
    Text: PD - 91388C POWER MOSFET THRU-HOLE TO-254AA IRFM260 200V, N-CHANNEL HEXFET MOSFET TECHNOLOGY Product Summary Part Number RDS(on) ID IRFM260 0.060 Ω 35A* HEXFET® MOSFET technology is the key to International Rectifier’s advanced line of power MOSFET transistors.


    Original     		91388C O-254AA) IRFM260 O-254AA. MIL-PRF-19500 international rectifier IRFM260 4.5v to 100v input regulator PDF

    irf 540 mosfet

    Abstract: ls 7400 PD908 014 IR MOSFET Transistor IRFM064
    Text: PD-90875C POWER MOSFET THRU-HOLE TO-254AA IRFM064 60V, N-CHANNEL HEXFET MOSFET TECHNOLOGY Product Summary Part Number IRFM064 RDS(on) 0.017 Ω ID 35A* HEXFET® MOSFET technology is the key to International Rectifier’s advanced line of power MOSFET transistors.


    Original     		PD-90875C O-254AA) IRFM064 O-254AA. MIL-PRF-19500 irf 540 mosfet ls 7400 PD908 014 IR MOSFET Transistor IRFM064 PDF

    Untitled

    Abstract: No abstract text available
    Text: FDB15N50 N-Channel UniFETTM MOSFET 500 V, 15 A, 380 mΩ Description Features UniFETTM MOSFET is Fairchild Semiconductor’s high voltage MOSFET family based on planar stripe and DMOS technology. This MOSFET is tailored to reduce on-state resistance, and to provide better switching


    Original     		FDB15N50 PDF

    IRFM054

    Abstract: No abstract text available
    Text: PD - 90709B POWER MOSFET THRU-HOLE TO-254AA IRFM054 60V, N-CHANNEL HEXFET MOSFET TECHNOLOGY Product Summary Part Number IRFM054 RDS(on) 0.027 Ω ID 35A* HEXFET® MOSFET technology is the key to International Rectifier’s advanced line of power MOSFET transistors. The


    Original     		90709B O-254AA) IRFM054 O-254AA. MIL-PRF-19500 IRFM054 PDF

    SMD1P

    Abstract: 2N7222U IRFN440 JANTX2N7222U JANTXV2N7222U irfn44
    Text: PD-91552B IRFN440 JANTX2N7222U JANTXV2N7222U HEXFET POWER MOSFET [REF:MIL-PRF-19500/596] N - CHANNEL Ω MOSFET 500 Volt, 0.85Ω Product Summary HEXFET® power MOSFET technology is the key to International Rectifier’s advanced line of power MOSFET transistors. The efficient geometry


    Original     		PD-91552B IRFN440 JANTX2N7222U JANTXV2N7222U MIL-PRF-19500/596] SMD1P 2N7222U IRFN440 JANTX2N7222U JANTXV2N7222U irfn44 PDF

    Untitled

    Abstract: No abstract text available
    Text: FDPF17N60NT N-Channel UniFETTM II MOSFET 600 V, 17 A, 340 mΩ Features Description • RDS on = 290 mΩ (Typ.) @ VGS = 10 V, ID = 8.5 A UniFETTM II MOSFET is Fairchild Semiconductor’s high voltage MOSFET family based on advanced planar stripe and DMOS technology. This advanced MOSFET family has the smallest onstate resistance among the planar MOSFET, and also provides


    Original     		FDPF17N60NT PDF

    IRF*260

    Abstract: IRFM260 4.5V TO 100V INPUT REGULATOR
    Text: PD - 91388B POWER MOSFET THRU-HOLE TO-254AA IRFM260 200V, N-CHANNEL HEXFET MOSFET TECHNOLOGY Product Summary Part Number RDS(on) ID IRFM260 0.060 Ω 35A* HEXFET® MOSFET technology is the key to International Rectifier’s advanced line of power MOSFET transistors. The


    Original     		91388B O-254AA) IRFM260 O-254AA. MIL-PRF-19500 IRF*260 IRFM260 4.5V TO 100V INPUT REGULATOR PDF

    irf 540 mosfet

    Abstract: IRFM064
    Text: PD - 90875A POWER MOSFET THRU-HOLE TO-254AA IRFM064 60V, N-CHANNEL HEXFET MOSFET TECHNOLOGY Product Summary Part Number IRFM064 RDS(on) 0.017 Ω ID 35A* HEXFET® MOSFET technology is the key to International Rectifier’s advanced line of power MOSFET transistors. The


    Original     		0875A O-254AA) IRFM064 O-254AA. MIL-PRF-19500 irf 540 mosfet IRFM064 PDF

    IRFM460

    Abstract: No abstract text available
    Text: PD - 90727B POWER MOSFET THRU-HOLE TO-254AA IRFM460 500V, N-CHANNEL HEXFET MOSFET TECHNOLOGY Product Summary Part Number RDS(on) ID IRFM460 0.27 Ω 19A HEXFET® MOSFET technology is the key to International Rectifier’s advanced line of power MOSFET transistors. The


    Original     		90727B O-254AA) IRFM460 O-254AA. MIL-PRF-19500 IRFM460 PDF

    IRFM044

    Abstract: No abstract text available
    Text: PD - 90708B POWER MOSFET THRU-HOLE TO-254AA IRFM044 60V, N-CHANNEL HEXFET MOSFET TECHNOLOGY Product Summary Part Number RDS(on) IRFM044 0.04 Ω ID 35A* HEXFET® MOSFET technology is the key to International Rectifier’s advanced line of power MOSFET transistors. The


    Original     		90708B O-254AA) IRFM044 O-254AA. MIL-PRF-19500 IRFM044 PDF