MOSFET MARKING CODE B3 Search Results

Contextual Info: SIEMENS Silicon N Channel MOSFET Triode BF 999 For high-frequency stages up to 300 MHz, preferably in FM applications Type Marking Ordering Code tape and reel PinCtonfigu ation 1 2 3 Package1) BF 999 LB Q62702-F1132 G SOT-23 D S Maximum Ratings Parameter

transistor marking M06 GHZ

Abstract: MSB014 dual gate mosfet in vhf amplifier SOT-143R sot143 code marking MS FET MARKING CODE sot143 Marking code MS M8B0J37 dual gate mosfet in uhf amplifier amplifier marking code D
Contextual Info: Philips Sem iconductors b b S 3 T 2 M □ 0 7 4 2 ti b 3^*1 SI C3 Dual gate MOS-FETs _ NAPC/PHILIPS Product specification BF904; BF904R SEIHCOND b3E D FO R D E T A ILE D IN FO RM A TIO N SEE TH E LA TE S T ISSUE O F H AND BO O K SC06O R D A TA S H EET QUICK REFERENCE DATA

Contextual Info: TSM4NB60 600V N-Channel Power MOSFET TO-220 ITO-220 Pin Definition: 1. Gate 2. Drain 3. Source PRODUCT SUMMARY VDS V RDS(on)(Ω) ID (A) 600 2.5 @ VGS =10V 4 General Description TO-251 (IPAK) The TSM4NB60 N-Channel Power MOSFET is TO-252 (DPAK) produced by new advance planar process. This

DIODE D12

Contextual Info: TSM4NB60 600V N-Channel Power MOSFET TO-220 ITO-220 Pin Definition: 1. Gate 2. Drain 3. Source PRODUCT SUMMARY VDS V RDS(on)(Ω) ID (A) 600 2.5 @ VGS =10V 2 General Description TO-251 (IPAK) The TSM4NB60 N-Channel Power MOSFET is TO-252 (DPAK) produced by new advance planar process. This

mosfet Marking Code b3

Abstract: diode c12 marking c12
Contextual Info: TSM4NB60 600V N-Channel Power MOSFET TO-220 ITO-220 Pin Definition: 1. Gate 2. Drain 3. Source PRODUCT SUMMARY VDS V RDS(on)(Ω) ID (A) 600 2.5 @ VGS =10V 2 General Description TO-251 (IPAK) The TSM4NB60 N-Channel Power MOSFET is TO-252 (DPAK) produced by new advance planar process. This

mosfet "marking code 44"

Abstract: TSM2NB60CP
Contextual Info: TSM2NB60 600V N-Channel Power MOSFET TO-220 ITO-220 Pin Definition: 1. Gate 2. Drain 3. Source PRODUCT SUMMARY VDS V RDS(on)(Ω) ID (A) 600 4.4 @ VGS =10V 1 General Description TO-251 (IPAK) The TSM2NB60 N-Channel Power MOSFET is TO-252 (DPAK) produced by new advance planar process. This

Contextual Info: TSM4NB60 600V N-Channel Power MOSFET TO-220 ITO-220 Pin Definition: 1. Gate 2. Drain 3. Source PRODUCT SUMMARY VDS V RDS(on)(Ω) ID (A) 600 2.5 @ VGS =10V 2 General Description TO-251 (IPAK) The TSM4NB60 N-Channel Power MOSFET is TO-252 (DPAK) produced by new advance planar process. This

Contextual Info: TSM2NB60 600V N-Channel Power MOSFET TO-220 ITO-220 Pin Definition: 1. Gate 2. Drain 3. Source PRODUCT SUMMARY VDS V RDS(on)(Ω) ID (A) 600 4.4 @ VGS =10V 1 General Description TO-251 (IPAK) The TSM2NB60 N-Channel Power MOSFET is TO-252 (DPAK) produced by new advance planar process. This

ITO-220

Abstract: TSM4N60CH
Contextual Info: TSM4N60 600V N-Channel Power MOSFET TO-220 ITO-220 TO-251 IPAK TO-252 (DPAK) PRODUCT SUMMARY Pin Definition: 1. Gate 2. Drain 3. Source VDS (V) RDS(on)(Ω) ID (A) 600 2.5 @ VGS =10V 2 General Description The TSM4N60 is produced using advanced planar stripe, DMOS technology. This latest technology has been

bf998 Mop

Abstract: BF998 marking t54 PHILIPS MOSFET MARKING PHILIPS MOSFET mcb349 dual gate fet N-channel dual-gate MOS-FET for tv 75bEb DUAL GATE MOS-FET
Contextual Info: b3E ]> Philips Semiconductors Data sheet status Preliminary specification date o f issue April 1991 FEATURES • Short channel transistor with high ratio lYfs 1/Cis • Low noise gain controlled amplifier to 1 GHz. DESCRIPTION Depletion type field-effect transistor

Contextual Info: TSM6N50 500V N-Channel Power MOSFET ITO-220 TO-252 DPAK TO-251 (IPAK) PRODUCT SUMMARY Pin Definition: 1. Gate 2. Drain 3. Source VDS (V) RDS(on)(Ω) ID (A) 500 1.4 @ VGS =10V 2.8 General Description The TSM6N50 N-Channel enhancement mode Power MOSFET is produced by planar stripe DMOS technology.

TSM6N50

Contextual Info: TSM6N50 500V N-Channel Power MOSFET ITO-220 TO-252 DPAK TO-251 (IPAK) PRODUCT SUMMARY Pin Definition: 1. Gate 2. Drain 3. Source VDS (V) RDS(on)(Ω) ID (A) 500 1.4 @ VGS =10V 2.8 General Description The TSM6N50 N-Channel enhancement mode Power MOSFET is produced by planar stripe DMOS technology.

TSM2N60CP

Abstract: MOSFET 600V 1A 2a 400v mosfet to-251 TSM2N60 TSM2N60CH
Contextual Info: TSM2N60 600V N-Channel Power MOSFET TO-220 TO-251 IPAK TO-252 (DPAK) Pin Definition: 1. Gate 2. Drain 3. Source PRODUCT SUMMARY VDS (V) RDS(on)(Ω) ID (A) 600 5 @ VGS =10V 1 General Description The TSM2N60 is used an advanced termination scheme to provide enhanced voltage-blocking capability without

Contextual Info: TSM2N60 600V N-Channel Power MOSFET TO-220 TO-251 IPAK TO-252 (DPAK) Pin Definition: 1. Gate 2. Drain 3. Source PRODUCT SUMMARY VDS (V) RDS(on)(Ω) ID (A) 600 5 @ VGS =10V 1 General Description The TSM2N60 is used an advanced termination scheme to provide enhanced voltage-blocking capability without

TSM4NB60CP

Abstract: 600v 4A mosfet
Contextual Info: Preliminary TSM4NB60 600V N-Channel Power MOSFET TO-251 IPAK TO-252 (DPAK) PRODUCT SUMMARY Pin Definition: 1. Gate 2. Drain 3. Source VDS (V) RDS(on)(Ω) ID (A) 600 2.5 @ VGS =10V 2 General Description The TSM4NB60 N-Channel Power MOSFET is produced by new advance planar process. This advanced

marking diode f11

Contextual Info: TSM5ND50 500V N-Channel Power MOSFET TO-251 IPAK TO-252 (DPAK) PRODUCT SUMMARY Pin Definition: 1. Gate 2. Drain 3. Source VDS (V) RDS(on)(Ω) ID (A) 500 1.5 @ VGS =10V 2.2 General Description The TSM5ND50 N-Channel enhancement mode Power MOSFET is produced by planar stripe DMOS

marking E11 DIODE

Abstract: E11 diode
Contextual Info: TSM5ND50 500V N-Channel Power MOSFET TO-251 IPAK TO-252 (DPAK) PRODUCT SUMMARY Pin Definition: 1. Gate 2. Drain 3. Source VDS (V) RDS(on)(Ω) ID (A) 500 1.5 @ VGS =10V 2.2 General Description The TSM5ND50 N-Channel enhancement mode Power MOSFET is produced by planar stripe DMOS

BF991

Abstract: 0R4S fet dual gate sot143 sot143 code marking MS sot143 Marking code MS
Contextual Info: b3E » • b b 5 3 ^ 4 □□743DA T3G « S IC 3 NAPC/PHILIPS SEniCOND BF991 _ A_ FOR D E T A IL E D IN F O R M A T IO N SEE T H E LA TE S T ISSUE OF H A N D B O O K SC07 OR D A T A S H E E T SILICON N-CHANNEL DUAL GATE MOS-FET Depletion type field-effect transistor in a plastic SO T143 microminiature envelope w ith source and

RESISTOR NETWORK SMD 8 PIN array isolated 2512

Abstract: 88em8011 MILMAX MACHINE marking code EA SMD MOSFET MOSFET marking smd NU Zener diode smd marking code nu prestera package marking semiconductor smd marking codes diode SMD MARKING CODE 606
Contextual Info: Cover 88EM8011 Power Factor Correction Controller Datasheet Patents, Patents Pending Including US Pat. Nos. 7,266,001 and 7,292,013 Doc. No. MV-S104861-00, Rev. November 28, 2007 Marvell. Moving Forward Faster Document Classification: Proprietary 88EM8011

Contextual Info: LF PA K 56 BUK7Y3R5-40E N-channel 40 V, 3.5 mΩ standard level MOSFET in LFPAK56 6 November 2013 Product data sheet 1. General description Standard level N-channel MOSFET in an LFPAK56 Power SO8 package using TrenchMOS technology. This product has been designed and qualified to AEC Q101

Contextual Info: LF PA K 56 BUK9Y7R2-60E N-channel 60 V, 7.2 mΩ logic level MOSFET in LFPAK56 6 November 2013 Product data sheet 1. General description Logic level N-channel MOSFET in an LFPAK56 Power SO8 package using TrenchMOS technology. This product has been designed and qualified to AEC Q101 standard for use

Contextual Info: LF PA K 56 BUK7Y7R2-60E N-channel 60 V, 7.2 mΩ standard level MOSFET in LFPAK56 6 November 2013 Product data sheet 1. General description Standard level N-channel MOSFET in an LFPAK56 Power SO8 package using TrenchMOS technology. This product has been designed and qualified to AEC Q101

Contextual Info: LF PA K 56 BUK9Y14-80E N-channel 80 V,15 mΩ logic level MOSFET in LFPAK56 8 May 2013 Product data sheet 1. General description Logic level N-channel MOSFET in an LFPAK56 Power SO8 package using TrenchMOS technology. This product has been designed and qualified to AEC Q101 standard for use

72560

Contextual Info: LF PA K 56 BUK7Y25-60E N-channel 60 V, 25 mΩ standard level MOSFET in LFPAK56 7 May 2013 Product data sheet 1. General description Standard level N-channel MOSFET in an LFPAK56 Power SO8 package using TrenchMOS technology. This product has been designed and qualified to AEC Q101