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    MOSFET MARKING CODE AE Search Results

    MOSFET MARKING CODE AE Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TCK424G Toshiba Electronic Devices & Storage Corporation MOSFET Gate Driver IC, 2.7 to 28 V, External MOSFET Gate drive / Inrush current reducing, WCSP6G Visit Toshiba Electronic Devices & Storage Corporation
    TCK425G Toshiba Electronic Devices & Storage Corporation MOSFET Gate Driver IC, 2.7 to 28 V, External MOSFET Gate drive / Inrush current reducing, WCSP6G Visit Toshiba Electronic Devices & Storage Corporation
    TCK423G Toshiba Electronic Devices & Storage Corporation MOSFET Gate Driver IC, 2.7 to 28 V, External MOSFET Gate drive / Inrush current reducing, WCSP6G Visit Toshiba Electronic Devices & Storage Corporation
    TCK422G Toshiba Electronic Devices & Storage Corporation MOSFET Gate Driver IC, 2.7 to 28 V, External MOSFET Gate drive / Inrush current reducing, WCSP6G Visit Toshiba Electronic Devices & Storage Corporation
    MG800FXF1JMS3 Toshiba Electronic Devices & Storage Corporation N-ch SiC MOSFET Module, 3300 V, 800 A, iXPLV, High-side: SiC SBD、Low-side: SiC MOSFET Visit Toshiba Electronic Devices & Storage Corporation

    MOSFET MARKING CODE AE Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    Untitled

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Silicon Junction FETs (Small Signal) 2SK3546G Silicon N-Channel MOSFET For switching • Features ■ Package • High-speed switching • Wide frequency band • Code SSMini3-F3 • Marking Symbol: 5F


    Original     		2002/95/EC) 2SK3546G PDF

    Si5404BDC

    Abstract: No abstract text available
    Text: Si5404BDC New Product Vishay Siliconix N-Channel 2.5-V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 20 rDS(on) (W) ID (A) 0.028 @ VGS = 4.5 V 7.5 0.039 @ VGS = 2.5 V 6.3 D TrenchFETr Power MOSFET Qg (Typ) 63 6.3 1206-8 ChipFETr D 1 D D D D G D D G S Marking Code


    Original     		Si5404BDC Si5404BDC-T1--E3 08-Apr-05 PDF

    Si5404BDC

    Abstract: No abstract text available
    Text: Si5404BDC New Product Vishay Siliconix N-Channel 2.5-V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 20 rDS(on) (W) ID (A) 0.028 @ VGS = 4.5 V 7.5 0.039 @ VGS = 2.5 V 6.3 D TrenchFETr Power MOSFET Qg (Typ) 63 6.3 1206-8 ChipFETr D 1 D D D D G D D G S Marking Code


    Original     		Si5404BDC Si5404BDC-T1--E3 18-Jul-08 PDF

    Si5404BDC-T1-E3

    Abstract: SI5404BDC
    Text: Si5404BDC New Product Vishay Siliconix N-Channel 2.5-V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 20 rDS(on) (W) ID (A) 0.028 @ VGS = 4.5 V 7.5 0.039 @ VGS = 2.5 V 6.3 D TrenchFETr Power MOSFET Qg (Typ) 63 6.3 1206-8 ChipFETr D 1 D D D D G D D G S Marking Code


    Original     		Si5404BDC Si5404BDC-T1--E3 S-41826--Rev. 11-Oct-04 Si5404BDC-T1-E3 PDF

    Untitled

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Silicon MOSFETs (Small Signal) 2SK0665G Silicon N-channel MOSFET For switching circuits • Package ■ Features • Code SMini3-F2 • Marking Symbol: 3O • Pin Name 1: Gate 2: Source 3: Drain


    Original     		2002/95/EC) 2SK0665G PDF

    2SK3547G

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Silicon Junction FETs (Small Signal) 2SK3547G Silicon N-channel MOSFET For switching • Package ■ Features • Code SSSMini3-F2 • Marking Symbol: 5F • Pin Name 1: Gate 2: Source 3: Drain


    Original     		2002/95/EC) 2SK3547G 2SK3547G PDF

    Untitled

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Silicon Junction FETs (Small Signal) 2SK3546G Silicon N-Channel MOSFET For switching • Package • High-speed switching • Wide frequency band • Code SSMini3-F3 • Marking Symbol: 5F • Pin Name


    Original     		2002/95/EC) 2SK3546G PDF

    Untitled

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Silicon Junction FETs (Small Signal) 2SK3547G Silicon N-channel MOSFET For switching • Package ■ Features • Code SSSMini3-F2 • Marking Symbol: 5F • Pin Name 1: Gate 2: Source 3: Drain


    Original     		2002/95/EC) 2SK3547G PDF

    2SK3546G

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Silicon Junction FETs (Small Signal) 2SK3546G Silicon N-Channel MOSFET For switching • Package • High-speed switching • Wide frequency band • Code SSMini3-F3 • Marking Symbol: 5F • Pin Name


    Original     		2002/95/EC) 2SK3546G 2SK3546G PDF

    Untitled

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Silicon MOSFETs (Small Signal) 2SK0665G Silicon N-channel MOSFET For switching circuits • Package ■ Features • Code SMini3-F2 • Marking Symbol: 3O • Pin Name 1: Gate 2: Source 3: Drain


    Original     		2002/95/EC) 2SK0665G PDF

    Untitled

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Silicon Junction FETs (Small Signal) 2SK3547G Silicon N-channel MOSFET For switching • Package • Code SSSMini3-F2 • Marking Symbol: 5F • Pin Name 1: Gate 2: Source 3: Drain M Di ain sc te


    Original     		2002/95/EC) 2SK3547G PDF

    Untitled

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Silicon MOSFETs (Small Signal) 2SK3539G Silicon N-channel MOSFET For switching • Package • Code SMini3-F2 • Marking Symbol: 5F • Pin Name 1: Gate 2: Source 3: Drain M Di ain sc te on na


    Original     		2002/95/EC) 2SK3539G PDF

    2SK3539G

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Silicon MOSFETs (Small Signal) 2SK3539G Silicon N-channel MOSFET For switching • Package ■ Features • Code SMini3-F2 • Marking Symbol: 5F • Pin Name 1: Gate 2: Source 3: Drain Th an W is k y


    Original     		2002/95/EC) 2SK3539G 2SK3539G PDF

    SQ1902EL-T1-GE3

    Abstract: 65532 SQ1902EL MARKING CODE 9N
    Text: SQ1902EL Vishay Siliconix Automotive Dual N-Channel 20 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • Compliant to RoHS Directive 2002/95/EC • AEC-Q101 Qualifiedd


    Original     		SQ1902EL 2002/95/EC AEC-Q101 OT-363 SC-70 18-Jul-08 SQ1902EL-T1-GE3 65532 SQ1902EL MARKING CODE 9N PDF

    Untitled

    Abstract: No abstract text available
    Text: LF PA K 56D BUK9K32-100E Dual N-channel 100 V, 33 mΩ logic level MOSFET 10 December 2013 Product data sheet 1. General description Dual logic level N-channel MOSFET in an LFPAK56D Dual Power-SO8 package using TrenchMOS technology. This product has been designed and qualified to AEC Q101


    Original     		BUK9K32-100E LFPAK56D PDF

    Untitled

    Abstract: No abstract text available
    Text: LF PA K 56D BUK9K17-60E Dual N-channel 60 V, 17 mΩ logic level MOSFET 19 March 2014 Product data sheet 1. General description Dual logic level N-channel MOSFET in an LFPAK56D Dual Power-SO8 package using TrenchMOS technology. This product has been designed and qualified to AEC Q101


    Original     		BUK9K17-60E LFPAK56D PDF

    96E840

    Abstract: No abstract text available
    Text: LF PA K 56D BUK9K6R8-40E Dual N-channel 40 V, 7.2 mΩ logic level MOSFET 5 December 2013 Product data sheet 1. General description Dual logic level N-channel MOSFET in an LFPAK56D Dual Power-SO8 package using TrenchMOS technology. This product has been designed and qualified to AEC Q101


    Original     		BUK9K6R8-40E LFPAK56D 96E840 PDF

    Untitled

    Abstract: No abstract text available
    Text: LF PA K 56D BUK9K8R7-40E Dual N-channel 40 V, 9.4 mΩ logic level MOSFET 10 December 2013 Product data sheet 1. General description Dual logic level N-channel MOSFET in an LFPAK56D Dual Power-SO8 package using TrenchMOS technology. This product has been designed and qualified to AEC Q101


    Original     		BUK9K8R7-40E LFPAK56D PDF

    Untitled

    Abstract: No abstract text available
    Text: LF PA K 56D BUK9K134-100E Dual N-channel 100 V, 159 mΩ logic level MOSFET 10 December 2013 Product data sheet 1. General description Dual logic level N-channel MOSFET in an LFPAK56D Dual Power-SO8 package using TrenchMOS technology. This product has been designed and qualified to AEC Q101


    Original     		BUK9K134-100E LFPAK56D PDF

    Untitled

    Abstract: No abstract text available
    Text: LF PA K 56 BUK7Y3R5-40E N-channel 40 V, 3.5 mΩ standard level MOSFET in LFPAK56 6 November 2013 Product data sheet 1. General description Standard level N-channel MOSFET in an LFPAK56 Power SO8 package using TrenchMOS technology. This product has been designed and qualified to AEC Q101


    Original     		BUK7Y3R5-40E LFPAK56 PDF

    Untitled

    Abstract: No abstract text available
    Text: LF PA K 56 BUK9Y7R2-60E N-channel 60 V, 7.2 mΩ logic level MOSFET in LFPAK56 6 November 2013 Product data sheet 1. General description Logic level N-channel MOSFET in an LFPAK56 Power SO8 package using TrenchMOS technology. This product has been designed and qualified to AEC Q101 standard for use


    Original     		BUK9Y7R2-60E LFPAK56 PDF

    Untitled

    Abstract: No abstract text available
    Text: LF PA K 56 BUK7Y7R2-60E N-channel 60 V, 7.2 mΩ standard level MOSFET in LFPAK56 6 November 2013 Product data sheet 1. General description Standard level N-channel MOSFET in an LFPAK56 Power SO8 package using TrenchMOS technology. This product has been designed and qualified to AEC Q101


    Original     		BUK7Y7R2-60E LFPAK56 PDF

    Untitled

    Abstract: No abstract text available
    Text: LF PA K 56 BUK9Y14-80E N-channel 80 V,15 mΩ logic level MOSFET in LFPAK56 8 May 2013 Product data sheet 1. General description Logic level N-channel MOSFET in an LFPAK56 Power SO8 package using TrenchMOS technology. This product has been designed and qualified to AEC Q101 standard for use


    Original     		BUK9Y14-80E LFPAK56 PDF

    BF961

    Abstract: No abstract text available
    Text: SIEM ENS Silicon N Channel MOSFET Tetrode BF961 • For input and mixer stages in FM and VHF TV tuners Type Marking Ordering Code BF 961 - Q62702-F518 Pin Configuration 2 1 3 4 S D Gz Package1 Gì X-plast Maximum Ratings Parameter Symbol Values Unit Drain-source voltage


    OCR Scan     		BF961 Q62702-F518 A235b05 QDbbfl37 EHM07003 fi23SbD5 BF961 PDF