MOSFET MARKING 506 Search Results

transistor BF 506

Abstract: bf506 wl SOT-23
Contextual Info: TELEFUNKEN ELECTRONIC filC D • A'^QQ'Jb 0005513 'i ■ AL6G ^ 7 2 / ~ TTIdilFlLDMDSIKl electronic | B F 506 Creative Technologies * Silicon PNP RF Transistor Applications: Oscillator-, mixer and uncontrolled pre-amplifier stages up to 300 MHz Features: • Small feedback capacitance

Contextual Info: FSB50660SF, FSB50660SFT Motion SPM 5 SuperFET® Series Features • UL Certified No. E209204 UL1557 Related Source • 600 V RDS(on) = 700 mMax SuperFET MOSFET 3Phase Inverter with Gate Drivers and Protection • RD-402 - Reference Design for Motion SPM 5 SuperFET Series

Contextual Info: FSB50660SFS Motion SPM 5 SuperFET® Series Features Related Source • UL Certified No. E209204 UL1557 • RD-402 - Reference Design for Motion SPM 5 SuperFET Series • 600 V RDS(on) = 700 mMax SuperFET MOSFET 3Phase Inverter with Gate Drivers and Protection

Contextual Info: FSB50660SF, FSB50660SFT Motion SPM 5 SuperFET® Series Features • UL Certified No. E209204 UL1557 Related Source • 600 V RDS(on) = 700 mMax SuperFET MOSFET 3Phase Inverter with Gate Drivers and Protection • RD-402 - Reference Design for Motion SPM 5 SuperFET Series

Contextual Info: LF PA K 56D BUK7K5R1-30E Dual N-channel 30 V, 5.1 mΩ standard level MOSFET 6 November 2013 Product data sheet 1. General description Dual standard level N-channel MOSFET in an LFPAK56D Dual Power-SO8 package using TrenchMOS technology. This product has been designed and qualified to

Contextual Info: LF PA K 56 BUK9Y4R8-60E N-channel 60 V, 4.8 mΩ logic level MOSFET in LFPAK56 8 May 2013 Product data sheet 1. General description Logic level N-channel MOSFET in an LFPAK56 Power SO8 package using TrenchMOS technology. This product has been designed and qualified to AEC Q101 standard for use

94E440

Contextual Info: LF PA K 56 BUK9Y4R4-40E N-channel 40 V, 4.4 mΩ logic level MOSFET in LFPAK56 7 May 2013 Product data sheet 1. General description Logic level N-channel MOSFET in an LFPAK56 Power SO8 package using TrenchMOS technology. This product has been designed and qualified to AEC Q101 standard for use

Contextual Info: LF PA K 56 BUK7Y12-100E N-channel 100 V, 12 mΩ standard level MOSFET in LFPAK56 8 May 2013 Product data sheet 1. General description Standard level N-channel MOSFET in an LFPAK56 Power SO8 package using TrenchMOS technology. This product has been designed and qualified to AEC Q101

Contextual Info: A Product Line of Diodes Incorporated ZXM66P02N8 20V P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits V BR DSS RDS(on) ID -20V 0.025Ω -8.0A • High pulse current handling in linear mode • Low on-resistance • Fast switching speed

133 Diode

Abstract: 66P02 ZXM66P02N8 ZXM66P02N8TA
Contextual Info: A Product Line of Diodes Incorporated ZXM66P02N8 20V P-CHANNEL ENHANCEMENT MODE MOSFET Please click here to visit our online spice models database. Product Summary Features and Benefits V BR DSS RDS(on) ID -20V 0.025Ω -8.0A • High pulse current handling in linear mode

ticomel transformer

Abstract: NATIONAL IGBT TICOMEL marking code Sk transistors mosfet Marking SAs PSDM-0DO2-5040 PSDM-0DT2-5020 audio transformer catalog MTBF mosfet power driver "SCHURTER" "Catalogue"
Contextual Info: Product Group Catalog EMC Products www.schurter.com/emc Power Stage Driver Modules  www.schurter.com > summary Intro Information XXX Power stage driver modules Keyword Index Product Datasheets XXX XXX XXX General Product Information Product Standard / Definitions / CE-Marking / Conformity

NCP45525-H

Abstract: NCP45524-H DFN8 2X2 MOSFET OF K SERIES
Contextual Info: NCP45524, NCP45525 Product Preview ecoSWITCH Advanced Load Management Controlled Load Switch with Low RON The NCP4552x series of load switches provide a component and area-reducing solution for efficient power domain switching with inrush current limit via soft start. These devices are designed to

Contextual Info: FZ06BIA083FI preliminary datasheet flowSOL 0 BI 600V/30A Features flow0 housing ● High efficiency ● Ultra fast switching frequency ● Low inductive design ● SiC in boost Target Applications Schematic ● Transformerless solar inverters Types ● FZ06BIA083FI

Contextual Info: Sample & Buy Product Folder Support & Community Tools & Software Technical Documents CSD17576Q5B SLPS497 – JUNE 2014 CSD17576Q5B 30 V N-Channel NexFET Power MOSFET 1 Features • • • • • • • • 1 Product Summary Low Qg and Qgd Low RDS on

E3P102

Abstract: T2-955V e6n02 t9n10e DL135 1086v l1n06c 24 v DC relay 34.51.7 d3n03 20n06hl
Contextual Info: DL135/D Rev. 7, Apr-2001 Power MOSFETs Power MOSFETs DL135/D Rev. 7, Apr–2001  SCILLC, 2001 Previous Edition  1996 “All Rights Reserved” EZFET, MiniMOS & SMARTDISCRETES are trademarks of Semiconductor Components Industries, LLC SCILLC . ChipFET is a trademark of Vishay Siliconix.

6X MOSFET

Abstract: NCP304 NUS1204MN
Contextual Info: NUS1204MN Product Preview Overvoltage Protection IC with Integrated MOSFET This device represents a new level of safety and integration by combining the NCP304 overvoltage protection circuit OVP with a −12 V P−Channel power MOSFET. It is specifically designed to

6x fet

Abstract: NUS1204MN NCP304 battery charger NCP304 NUS1204MNT1G 100 6x DIODE 47-25 l
Contextual Info: NUS1204MN Overvoltage Protection IC with Integrated MOSFET This device represents a new level of safety and integration by combining the NCP304 overvoltage protection circuit OVP with a −12 V P−Channel power MOSFET. It is specifically designed to protect sensitive electronic circuitry from overvoltage transients and

ovp ic

Abstract: NUS1204MN
Contextual Info: NUS1204MN Overvoltage Protection IC with Integrated MOSFET This device represents a new level of safety and integration by combining the NCP304 overvoltage protection circuit OVP with a −12 V P−Channel power MOSFET. It is specifically designed to protect sensitive electronic circuitry from overvoltage transients and

Contextual Info: NUS3046MN Overvoltage Protection IC with Integrated MOSFET This device represents a new level of safety and integration by combining the NCP346 overvoltage protection circuit OVP with a 30 V P−channel power MOSFET. This IC is specifically designed to protect sensitive electronic circuitry from overvoltage transients and

Contextual Info: NCP45526 ecoSWITCHt Advanced Load Management Controlled Load Switch with Low RON The NCP45526 load switch provides a component and area-reducing solution for efficient power domain switching with inrush current limit via soft start. This device is designed to integrate

vrm11.x

Abstract: NCP3420DR2G NCP3420MNR2G NCP5381 NTD60N03 506BJ-01 NCP3420 DASF002479
Contextual Info: NCP3420 MOSFET Driver with Dual Outputs for Synchronous Buck Converters The NCP3420 is a single Phase 12 V MOSFET gate driver optimized to drive the gates of both high−side and low−side power MOSFETs in a synchronous buck converter. The high−side and

VRM11

Contextual Info: NCP3420 MOSFET Driver with Dual Outputs for Synchronous Buck Converters The NCP3420 is a single Phase 12 V MOSFET gate driver optimized to drive the gates of both high−side and low−side power MOSFETs in a synchronous buck converter. The high−side and

NCP3420

Abstract: mosfet diagram power supply
Contextual Info: NCP3420 MOSFET Driver with Dual Outputs for Synchronous Buck Converters The NCP3420 is a single Phase 12 V MOSFET gate driver optimized to drive the gates of both high−side and low−side power MOSFETs in a synchronous buck converter. The high−side and

Contextual Info: NCP3420 MOSFET Driver with Dual Outputs for Synchronous Buck Converters The NCP3420 is a single Phase 12 V MOSFET gate driver optimized to drive the gates of both high−side and low−side power MOSFETs in a synchronous buck converter. The high−side and