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    MOSFET LOW VGS 1A Search Results

    MOSFET LOW VGS 1A Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    MG800FXF1JMS3 Toshiba Electronic Devices & Storage Corporation N-ch SiC MOSFET Module, 3300 V, 800 A, iXPLV, High-side: SiC SBD、Low-side: SiC MOSFET Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation
    XPJ1R004PB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 40 V, 160 A, 0.001 Ω@10V, S-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK4K1A60F Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 600 V, 2.0 A, 4.1 Ohm@10V, TO-220SIS Visit Toshiba Electronic Devices & Storage Corporation

    MOSFET LOW VGS 1A Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    TS16949

    Abstract: ZXMN2B01F ZXMN2B01FTA
    Text: ZXMN2B01F 20V SOT23 N-channel enhancement mode MOSFET with low gate drive capability Summary RDS on (⍀) ID (A) 0.100 @ VGS= 4.5V 2.4 0.150 @ VGS= 2.5V 2.0 0.200 @ VGS= 1.8V 1.7 V(BR)DSS 20 Description This new generation trench MOSFET from Zetex features low onresistance achievable with low gate drive.


    Original     		PDF ZXMN2B01F ZXMN2B01FTA D-81541 TS16949 ZXMN2B01F ZXMN2B01FTA

    Untitled

    Abstract: No abstract text available
    Text: ZXMN2B01F 20V SOT23 N-channel enhancement mode MOSFET with low gate drive capability Summary RDS on (⍀) ID (A) 0.100 @ VGS= 4.5V 2.4 0.150 @ VGS= 2.5V 2.0 0.200 @ VGS= 1.8V 1.7 V(BR)DSS 20 Description This new generation trench MOSFET from Zetex features low onresistance achievable with low gate drive.


    Original     		PDF ZXMN2B01F D-81541

    Untitled

    Abstract: No abstract text available
    Text: ZXMN2B01F 20V SOT23 N-channel enhancement mode MOSFET with low gate drive capability Summary RDS on (⍀) ID (A) 0.100 @ VGS= 4.5V 2.4 0.150 @ VGS= 2.5V 2.0 0.200 @ VGS= 1.8V 1.7 V(BR)DSS 20 Description This new generation trench MOSFET from Zetex features low onresistance achievable with low gate drive.


    Original     		PDF ZXMN2B01F

    MOSFET sot23-6 QG

    Abstract: MARKING TH SOT23-6 MOSFET ZXMN2B03E6 ZXMN2B03E6TA zxm* sot23-6 MOSFET sot23-6 18a marking sot23
    Text: ZXMN2B03E6 20V SOT23-6 N-channel enhancement mode MOSFET with low gate drive capability Summary RDS on (⍀) ID (A) 0.040 @ VGS= 4.5V 5.4 0.055 @ VGS= 2.5V 4.6 0.075 @ VGS= 1.8V 4.0 V(BR)DSS 20 Description This new generation trench MOSFET from Zetex features low onresistance achievable with low gate drive.


    Original     		PDF ZXMN2B03E6 OT23-6 MOSFET sot23-6 QG MARKING TH SOT23-6 MOSFET ZXMN2B03E6 ZXMN2B03E6TA zxm* sot23-6 MOSFET sot23-6 18a marking sot23

    Untitled

    Abstract: No abstract text available
    Text: Product specification ZXMN2B01F 20V SOT23 N-channel enhancement mode MOSFET with low gate drive capability Summary RDS on (⍀) ID (A) 0.100 @ VGS= 4.5V 2.4 0.150 @ VGS= 2.5V 2.0 0.200 @ VGS= 1.8V 1.7 V(BR)DSS 20 Description This new generation trench MOSFET from TY features low onresistance achievable with low gate drive.


    Original     		PDF ZXMN2B01F ZXMN2B01FTA 00A/ms

    Untitled

    Abstract: No abstract text available
    Text: ZXMN2B03E6 20V SOT23-6 N-channel enhancement mode MOSFET with low gate drive capability Summary V BR DSS 20 RDS(on) (⍀) ID (A) 0.040 @ VGS= 4.5V 5.4 0.055 @ VGS= 2.5V 4.6 0.075 @ VGS= 1.8V 4.0 Description This new generation trench MOSFET from Zetex features low onresistance achievable with low gate drive.


    Original     		PDF ZXMN2B03E6 OT23-6

    AON2411

    Abstract: No abstract text available
    Text: AON2411 12V P-Channel MOSFET General Description Product Summary VDS • Latest Trench Power MOSFET technology • Very Low RDS ON at 1.8V VGS • Low Gate Charge • ESD protection • RoHS and Halogen-Free Compliant ID (at VGS=-4.5V) -12V -20A RDS(ON) (at VGS=-4.5V)


    Original     		PDF AON2411 AON2411

    diode marking 226

    Abstract: TS16949 ZXMN2F30FH ZXMN2F30FHTA
    Text: ZXMN2F30FH 20V SOT23 N-channel enhancement mode MOSFET Summary V BR DSS RDS(on) (Ω) ID (A) 20 0.045 @ VGS= 4.5V 4.9 0.065 @ VGS= 2.5V 4.1 Description This new generation Trench MOSFET from Zetex features low onresistance achievable with low (2.5V) gate drive.


    Original     		PDF ZXMN2F30FH ZXMN2F30FHTA D-81541 diode marking 226 TS16949 ZXMN2F30FH ZXMN2F30FHTA

    Untitled

    Abstract: No abstract text available
    Text: DMN3033LSD DUAL N-CHANNEL ENHANCEMENT MODE MOSFET Features Mechanical Data • • • • • • • • • • • Dual N-Channel MOSFET Low On-Resistance • 20m @ VGS = 10V • 27m @ VGS = 4.5V Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed


    Original     		PDF DMN3033LSD AEC-Q101 J-STD-020 DS31262

    p3098

    Abstract: No abstract text available
    Text: DMP3098LSD DUAL P-CHANNEL ENHANCEMENT MODE MOSFET Features N EW PRODU CT • • • • • • • • • Mechanical Data • • Dual P-Channel MOSFET Low On-Resistance • 65m @ VGS = -10V • 115m @ VGS = -4.5V Low Gate Threshold Voltage Low Input Capacitance


    Original     		PDF DMP3098LSD AEC-Q101 J-STD-020D DS31448 p3098

    Untitled

    Abstract: No abstract text available
    Text: AON6413 30V P-Channel MOSFET General Description Product Summary VDS • Latest Trench Power MOSFET technology • Very Low RDS ON at 4.5V VGS • Low Gate Charge • High Current Capability • RoHS and Halogen-Free Compliant Application ID (at VGS=-10V)


    Original     		PDF AON6413

    ZXMN2F34FHTA

    Abstract: TS16949 ZXMN2F34FH
    Text: ZXMN2F34FH 20V SOT23 N-channel enhancement mode MOSFET Summary V BR DSS RDS(on) (Ω) ID (A) 20 0.060 @ VGS= 4.5V 4.0 0.120 @ VGS= 2.5V 2.9 Description This new generation Trench MOSFET from Zetex features low onresistance achievable with low (2.5V) gate drive.


    Original     		PDF ZXMN2F34FH ZXMN2F34FHTA D-81541 ZXMN2F34FHTA TS16949 ZXMN2F34FH

    design ideas

    Abstract: TS16949 ZXMN2F34FH ZXMN2F34FHTA
    Text: ZXMN2F34FH 20V SOT23 N-channel enhancement mode MOSFET Summary V BR DSS RDS(on) (Ω) ID (A) 20 0.060 @ VGS= 4.5V 4.0 0.120 @ VGS= 2.5V 2.9 Description This new generation Trench MOSFET from Zetex features low onresistance achievable with low (2.5V) gate drive.


    Original     		PDF ZXMN2F34FH ZXMN2F34FHTA D-81541 design ideas TS16949 ZXMN2F34FH ZXMN2F34FHTA

    D8154

    Abstract: ZXMN2F30FH
    Text: ZXMN2F30FH 20V SOT23 N-channel enhancement mode MOSFET Summary V BR DSS RDS(on) (Ω) ID (A) 20 0.045 @ VGS= 4.5V 4.9 0.065 @ VGS= 2.5V 4.1 Description This new generation Trench MOSFET from Zetex features low onresistance achievable with low (2.5V) gate drive.


    Original     		PDF ZXMN2F30FH ZXMN2F30FHTA ZXMN2F30FH 522-ZXMN2F30FHTA ZXMN2F30FHTA D8154

    ZXMN2088

    Abstract: TS16949 ZXMN2088DE6 ZXMN2088DE6TA SOT23-6 MARKING g2
    Text: Part no. ZXMN2088DE6 20V Dual SOT23-6 N-channel enhancement mode MOSFET with low gate drive capability Summary V BR DSS 20 RDS(on) (Ω) ID (A) 0.200 @ VGS= 4.5V 2.1 0.240 @ VGS= 2.5V 1.9 0.310 @ VGS= 1.8V 1.7 Description This new generation dual n-channel trench MOSFET from Zetex features low on-resistance


    Original     		PDF ZXMN2088DE6 OT23-6 OT23-6 ZXMN2088DE6TA D-81541 ZXMN2088 TS16949 ZXMN2088DE6 ZXMN2088DE6TA SOT23-6 MARKING g2

    Untitled

    Abstract: No abstract text available
    Text: DMP2066LSD N EW PRODU CT DUAL P-CHANNEL ENHANCEMENT MODE MOSFET Features Mechanical Data • • • • • • • • • • • Dual P-Channel MOSFET Low On-Resistance • 40m @ VGS = -4.5V • 70m @ VGS = -2.5V Low Gate Threshold Voltage Low Input Capacitance


    Original     		PDF DMP2066LSD AEC-Q101 J-STD-020D DS31453

    C3018LD

    Abstract: No abstract text available
    Text: DMC3018LSD COMPLEMENTARY PAIR ENHANCEMENT MODE MOSFET Product Summary Device NEW PRODUCT RDS on max ID Max TA = +25°C • Complementary Pair MOSFET • Low On-Resistance 20mΩ @ VGS = 10V 9.1A • Low Gate Threshold Voltage 32mΩ @ VGS = 4.5V 7.2A • Low Input Capacitance


    Original     		PDF DMC3018LSD AEC-Q101 DS31310 C3018LD

    MDS9651

    Abstract: MDS9651URH trench mosfet N-P Channel mosfet 40V Complementary MOSFET
    Text: Complementary N-P Channel Trench MOSFET General Description Features N-Channel VDS = 30V ID = 6.9A @ VGS = 10V RDS ON <28mΩ @ VGS = 10V <42mΩ @ VGS = 4.5V The MDS9651 uses advanced MagnaChip’s MOSFET Technology to provide low on-state resistance, high switching performance and excellent


    Original     		PDF MDS9651 MDS9651­ MDS9651URH trench mosfet N-P Channel mosfet 40V Complementary MOSFET

    N3033LD

    Abstract: No abstract text available
    Text: DMN3033LSD DUAL N-CHANNEL ENHANCEMENT MODE MOSFET Features Mechanical Data • • • • • • • • • • • Dual N-Channel MOSFET Low On-Resistance • 20mΩ @ VGS = 10V • 27mΩ @ VGS = 4.5V Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed


    Original     		PDF DMN3033LSD AEC-Q101 J-STD-020 MIL-STD-202, 072grams DS31262 N3033LD

    P3098LD

    Abstract: No abstract text available
    Text: DMP3098LSD DUAL P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary RDS on max ID TA = +25°C • Dual P-Channel MOSFET • Low On-Resistance 65mΩ @ VGS = -10V -4.4A • Low Gate Threshold Voltage 115mΩ @ VGS = -4.5V -3.2A • Low Input Capacitance • Fast Switching Speed


    Original     		PDF DMP3098LSD AEC-Q101 DS31448 P3098LD

    Untitled

    Abstract: No abstract text available
    Text: Product specification ZXMN2F30FH 20V SOT23 N-channel enhancement mode MOSFET Summary V BR DSS RDS(on) (Ω) ID (A) 20 0.045 @ VGS= 4.5V 4.9 0.065 @ VGS= 2.5V 4.1 Description This new generation Trench MOSFET from TY features low onresistance achievable with low (2.5V) gate drive.


    Original     		PDF ZXMN2F30FH ZXMN2F30FHme

    Untitled

    Abstract: No abstract text available
    Text: AON7400B 30V N-Channel MOSFET General Description Product Summary VDS • Latest Trench Power MOSFET technology • Very Low RDS ON at 4.5V VGS • Low Gate Charge • High Current Capability • RoHS and Halogen-Free Compliant 30V 30A ID (at VGS=10V) Application


    Original     		PDF AON7400B

    Untitled

    Abstract: No abstract text available
    Text: DMP2160UW P-CHANNEL ENHANCEMENT MODE MOSFET Mechanical Data •  Low On-Resistance 100m @ VGS = -4.5V   120m @ VGS = -2.5V  160m @ VGS = -1.8V  Moisture Sensitivity: Level 1 per J-STD-020D  Very Low Gate Threshold Voltage VGS th ≤ 1V


    Original     		PDF DMP2160UW AEC-Q101 OT323 J-STD-020D MIL-STD-202, DS31521

    Untitled

    Abstract: No abstract text available
    Text: Product specification ZXMN2F34FH 20V SOT23 N-channel enhancement mode MOSFET Summary V BR DSS RDS(on) (Ω) ID (A) 20 0.060 @ VGS= 4.5V 4.0 0.120 @ VGS= 2.5V 2.9 Description This new generation Trench MOSFET from TY features low onresistance achievable with low (2.5V) gate drive.


    Original     		PDF ZXMN2F34FH ZXMN2F34FHTA