MOSFET K3043 Search Results

MOSFET K3043 Result Highlights (5)

Part	ECAD Model	Manufacturer	Description	Download	Buy
MG800FXF1JMS3		Toshiba Electronic Devices & Storage Corporation	N-ch SiC MOSFET Module, 3300 V, 800 A, iXPLV, High-side: SiC SBD、Low-side: SiC MOSFET
TK190U65Z		Toshiba Electronic Devices & Storage Corporation	MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL
TK7R0E08QM		Toshiba Electronic Devices & Storage Corporation	MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB
XPJ1R004PB		Toshiba Electronic Devices & Storage Corporation	N-ch MOSFET, 40 V, 160 A, 0.001 Ω@10V, S-TOGL
TK4K1A60F		Toshiba Electronic Devices & Storage Corporation	MOSFET, N-ch, 600 V, 2.0 A, 4.1 Ohm@10V, TO-220SIS

MOSFET K3043 Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
k3043 Abstract: mosfet k3043 2SK3043 Text: Power MOSFETs 2SK3043 Silicon N-channel power MOSFET Unit: mm • Features 4.6±0.2 9.9±0.3 2.9±0.2 3.0±0.5 • Avalanche energy capability guaranteed: EAS > 100 mJ • Gate-source surrender voltage VGSS : ±30 V guaranteed • High-speed switching • No secondary breakdown	Original	PDF	2SK3043 10lues, k3043 mosfet k3043 2SK3043
2SK3043 Abstract: No abstract text available Text: This product complies with the RoHS Directive EU 2002/95/EC . Power MOSFETs 2SK3043 Silicon N-channel power MOSFET Unit: mm • Features 4.6±0.2 9.9±0.3 2.9±0.2 3.0±0.5 • Avalanche energy capability guaranteed: EAS > 100 mJ • Gate-source surrender voltage VGSS : ±30 V guaranteed	Original	PDF	2002/95/EC) 2SK3043 2SK3043
mosfet k3043 Abstract: No abstract text available Text: This product complies with the RoHS Directive EU 2002/95/EC . Power MOSFETs 2SK3043 Silicon N-channel power MOSFET Unit: mm • Features 4.6±0.2 9.9±0.3 2.9±0.2 3.0±0.5 • Avalanche energy capability guaranteed: EAS > 100 mJ • Gate-source surrender voltage VGSS : ±30 V guaranteed	Original	PDF	2002/95/EC) 2SK3043 mosfet k3043
Untitled Abstract: No abstract text available Text: This product complies with the RoHS Directive EU 2002/95/EC . Power MOSFETs 2SK3043 Silicon N-channel power MOSFET Unit: mm • Features 4.6±0.2 9.9±0.3 2.9±0.2 3.0±0.5 • Avalanche energy capability guaranteed: EAS > 100 mJ • Gate-source surrender voltage VGSS : ±30 V guaranteed	Original	PDF	2002/95/EC) 2SK3043 O-220D-A1 K3043
K3043 Abstract: mosfet k3043 2SK3043 Text: This product complies with the RoHS Directive EU 2002/95/EC . Power MOSFETs 2SK3043 Silicon N-channel power MOSFET Unit: mm • Features 4.6±0.2 9.9±0.3 2.9±0.2 M Di ain sc te on na tin nc ue e/ d 3.0±0.5 • Avalanche energy capability guaranteed: EAS > 100 mJ	Original	PDF	2002/95/EC) 2SK3043 K3043 mosfet k3043 2SK3043