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    MOSFET K 1225 Search Results

    MOSFET K 1225 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    MG800FXF1JMS3 Toshiba Electronic Devices & Storage Corporation N-ch SiC MOSFET Module, 3300 V, 800 A, iXPLV, High-side: SiC SBD、Low-side: SiC MOSFET Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation
    XPJ1R004PB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 40 V, 160 A, 0.001 Ω@10V, S-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK4K1A60F Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 600 V, 2.0 A, 4.1 Ohm@10V, TO-220SIS Visit Toshiba Electronic Devices & Storage Corporation

    MOSFET K 1225 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: PSMN6R1-30YLD N-channel 30 V, 6.1 mΩ logic level MOSFET in LFPAK56 using NextPowerS3 Technology 19 September 2014 Product data sheet 1. General description Logic level gate drive N-channel enhancement mode MOSFET in LFPAK56 package. NextPowerS3 portfolio utilising NXP’s unique “SchottkyPlus” technology delivers


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    PDF PSMN6R1-30YLD LFPAK56 LFPAK56

    Untitled

    Abstract: No abstract text available
    Text: HV320 Initial Release Accurate, Re-Settable Electronic Circuit Breaker Negative Supply Rail Features General Description Differential 10V to 90V operation (+VEE / -VEE) UV and OV Lock Out Power-On-Reset (POR) for debouncing Sense resistor programs circuit breaker


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    PDF HV320 HV320 IRFB4710

    tyco igbt

    Abstract: No abstract text available
    Text: HV320 Initial Release Accurate, Re-Settable Electronic Circuit Breaker Negative Supply Rail Features General Description Differential 10V to 90V operation (+VIN / -VEE) UV and OV Lock Out Power-On-Reset (POR) for debouncing Sense resistor programs circuit breaker


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    PDF HV320 HV320 IRFB4710 tyco igbt

    IRFB4710

    Abstract: tyco igbt ptc use in lg 400 AMP CIRCUIT BREAKER tyco tyco igbt module HV320 HV320LG IRFR120 IGBT 48V 200A IRFFR120N
    Text: HV320 Initial Release Accurate, Re-Settable Electronic Circuit Breaker Negative Supply Rail Features General Description ! ! ! ! ! ! ! ! ! The Supertex HV320 re-settable electronic circuit breaker is designed to provide fast, consistent and accurate current


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    PDF HV320 HV320 IRFB4710 IRFB4710 tyco igbt ptc use in lg 400 AMP CIRCUIT BREAKER tyco tyco igbt module HV320LG IRFR120 IGBT 48V 200A IRFFR120N

    capacitor 50v 39uf

    Abstract: power supply DC 48v 100a power supply circuit diagram IRFB4710 ptc use in lg Breaker locks tyco igbt HV320 HV320LG IRFR120 mosfet based circuit breaker
    Text: HV320 Initial Release Accurate, Re-Settable Electronic Circuit Breaker Negative Supply Rail Features General Description Differential 10V to 90V operation (+VIN / -VEE) UV and OV Lock Out Power-On-Reset (POR) for debouncing Sense resistor programs circuit breaker


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    PDF HV320 HV320 IRFB4710 capacitor 50v 39uf power supply DC 48v 100a power supply circuit diagram IRFB4710 ptc use in lg Breaker locks tyco igbt HV320LG IRFR120 mosfet based circuit breaker

    400 amp 120 V igbt

    Abstract: IRFFR120 IGBT 48V 200A
    Text: HV320 Initial Release Accurate, Re-Settable Electronic Circuit Breaker Negative Supply Rail Features General Description Differential 10V to 90V operation (+VEE / -VEE) UV and OV Lock Out Power-On-Reset (POR) for debouncing Sense resistor programs circuit breaker


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    PDF HV320 HV320 IRFx4710 IRFB4710 400 amp 120 V igbt IRFFR120 IGBT 48V 200A

    gate to drain clamp

    Abstract: TB 1225 EN NIF9N05CL NIF9N05CLT4
    Text: NIF9N05CL Advance Information Power MOSFET 2.6 Amps, 52 Volts N-Channel, Logic Level, Clamped MOSFET w/ ESD Protection in a SOT-223 Package http://onsemi.com 2.6 AMPERES 52 V CLAMPED RDS on = 120 mW (Typ.) Benefits • High Energy Capability for Inductive Loads


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    PDF NIF9N05CL OT-223 NIF9N05CL/D gate to drain clamp TB 1225 EN NIF9N05CL NIF9N05CLT4

    MT 6236

    Abstract: Transistor WIG 10NO2Z woy transistor AN569 zener diod MARKING S04 diod zener
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL Order this document bv MMSF1ONO22D DATA DesignerSTM Data Sheet - I I Medium Power Surface Mount Products TMOS Single N-Channel with Monolithic Zener ESD Protected Gate EZFETSTM are an advanced series of power MOSFETS which


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    PDF MMSF1ONO22D 2W609 MT 6236 Transistor WIG 10NO2Z woy transistor AN569 zener diod MARKING S04 diod zener

    16SVPC270M

    Abstract: 7443551200 J 3305-1 BSC042N03MS pdcr 318 adp1870 3225A
    Text: Synchronous Buck Controller with Constant On-Time and Valley Current Mode ADP1870/ADP1871 FEATURES TYPICAL APPLICATIONS CIRCUIT VIN = 2.95V TO 20V VIN CC VOUT RTOP RC ADP1870/ ADP1871 CC2 COMP/EN BST CBST FB COUT Q2 SW VREG DRVL PGND RRES LOAD Figure 1. 100


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    PDF ADP1870/ADP1871 ADP1870/ ADP1871 ADP1871 10-Lead RM-10 16SVPC270M 7443551200 J 3305-1 BSC042N03MS pdcr 318 adp1870 3225A

    pdcr 4010

    Abstract: pdcr 960 pdcr 318 GRM32ER71E226KE15 4015 IC circuit diagram adp1872 GRM32ER71E226 BA SO-8 MARKING CODE
    Text: Synchronous Current-Mode with Constant On-Time, PWM Buck Controller ADP1872/ADP1873 Data Sheet FEATURES TYPICAL APPLICATIONS CIRCUIT VIN = 2.75V TO 20V ADP1872/ ADP1873 BST COMP/EN VOUT CIN CBST RTOP FB DRVH RBOT CVDD2 VDD = 2.75V TO 5.5V GND SW VDD DRVL PGND


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    PDF ADP1873 10-lead ADP1872/ADP1873 RM-10 RM-10 pdcr 4010 pdcr 960 pdcr 318 GRM32ER71E226KE15 4015 IC circuit diagram adp1872 GRM32ER71E226 BA SO-8 MARKING CODE

    Untitled

    Abstract: No abstract text available
    Text: Synchronous Current-Mode with Constant On-Time, PWM Buck Controller ADP1872/ADP1873 Data Sheet FEATURES TYPICAL APPLICATIONS CIRCUIT VIN = 2.75V TO 20V ADP1872/ ADP1873 BST COMP/EN VOUT CIN CBST RTOP FB DRVH RBOT CVDD2 VDD = 2.75V TO 5.5V GND SW VDD DRVL PGND


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    PDF ADP1872/ADP1873 ADP1872/ ADP1873 300kHz BSC042N03MS 10-Lead D08297-0-7/12

    pdcr 910

    Abstract: GRM32ER61C476KE15L PDCR 900 GRM32ER71E226 pdcr 960 PDCR 900 series GRM32ER71E226KE15L PDCR 911 series X2703 CEP125U
    Text: Synchronous Current-Mode with Constant On-Time, PWM Buck Controller ADP1882/ADP1883 FEATURES TYPICAL APPLICATIONS CIRCUIT VIN = 2.75V TO 20V VIN CC VOUT RTOP RC CC2 ADP1882/ ADP1883 COMP/EN BST CBST FB DRVH Q1 L VOUT RBOT VDD COUT Q2 SW DRVL PGND RRES VDD = 2.75V TO 5.5V


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    PDF ADP1882/ADP1883 ADP1882/ ADP1883 300kHz 10-Lead RM-10 pdcr 910 GRM32ER61C476KE15L PDCR 900 GRM32ER71E226 pdcr 960 PDCR 900 series GRM32ER71E226KE15L PDCR 911 series X2703 CEP125U

    TLE7201

    Abstract: BTS426L2 TLE 6289 xc 7270 TRANSISTOR SMD K27 BTS7960B TLE6289GP BSP 452-T bts5241l ISO11519
    Text: Automotive Power Selection Guide Ultimate POWER – Perfect Control CO M P L E T E A u t o m o t i v e S o l u t i o ns f r o m I n f i n e o n www.infineon.com/power Never stop thinking. Introduction Power and Control – a Successful Combination D O Y O U N E E D to control more power? With increasing accuracy? Do


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    PDF B112-H6731-G12-X-7600 TLE7201 BTS426L2 TLE 6289 xc 7270 TRANSISTOR SMD K27 BTS7960B TLE6289GP BSP 452-T bts5241l ISO11519

    Untitled

    Abstract: No abstract text available
    Text: Synchronous Current-Mode with Constant On-Time, PWM Buck Controller ADP1882/ADP1883 TYPICAL APPLICATIONS CIRCUIT FEATURES VIN = 2.75V TO 20V VIN CC VOUT RTOP RC CC2 ADP1882/ ADP1883 COMP/EN BST CBST FB DRVH Q1 L VOUT RBOT VDD COUT Q2 SW DRVL PGND RRES VDD = 2.75V TO 5.5V


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    PDF ADP1882/ADP1883 ADP1882/ ADP1883 300kP] 10-Lead RM-10

    Untitled

    Abstract: No abstract text available
    Text: TYPICAL APPLICATIONS CIRCUIT FEATURES VIN = 2.95V TO 20V VOUT RTOP CIN BST CBST EN DRVH FB SW RBOT GND Q1 L VOUT COUT Q2 LOAD DRVL RPGD VREG PGOOD SS VREG_IN CVREG VEXT CSS RTRK2 RES RRES TRACK VMASTER RTRK1 PGND Figure 1. Typical Applications Circuit 100


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    PDF ADP1875 16-lead RQ-16

    J 3305-1

    Abstract: transistor J 3305-1 271p PG-TDSON-8 circuit digram using ic 880 GRM32ER61C476KE15L PDCR 900 series PDCR 900 7443551200 pdcr 4010
    Text: Synchronous Current-Mode with Constant On-Time, PWM Buck Controller ADP1872/ADP1873 FEATURES TYPICAL APPLICATIONS CIRCUIT VIN = 2.75V TO 20V VOUT ADP1872/ ADP1873 COMP/EN RTOP FB RBOT CVDD2 VDD = 2.75V TO 5.5V BST CIN CBST DRVH GND L VOUT COUT Q2 SW VDD Q1


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    PDF ADP1872/ADP1873 ADP1872/ ADP1873 300kHz BSC042N03MS 08297kage 10-Lead J 3305-1 transistor J 3305-1 271p PG-TDSON-8 circuit digram using ic 880 GRM32ER61C476KE15L PDCR 900 series PDCR 900 7443551200 pdcr 4010

    01e3

    Abstract: SKB 30 / 02 SKB 7 02 AN9321 AN9322 HUF75631SK8 HUF75631SK8T MS-012AA TB334
    Text: interrii H U F 7 5 6 3 1 S K 8 Data S h eet O c to b e r 1999 F ile N u m b e r 4 78 5 5.5A, 100V, 0.039 Ohm, N-Channel, UltraFET Power MOSFET Packaging Features JEDEC MS-012AA • Ultra Low On-Resistance BRANDING DASH - rDS ON = 0 -0 3 9 Q , VGS = 10 V • Simulation Models


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    PDF HUF75631SK8 MS-012AA HUF75631SK8 75631SK8 01e3 SKB 30 / 02 SKB 7 02 AN9321 AN9322 HUF75631SK8T TB334

    IRFD1Z3 equivalent

    Abstract: 8N60 equivalent TP8N20 TP8N10 siemens semiconductor manual What is comparable with IRF 3205 2N6823 irf8408 MTM5N90 designers datasheet smps cook circuit
    Text: The information in this book has been carefully checked and is believed to be accurate; however, no responsibility is assumed for inaccuracies. Motorola reserves the right to make changes with­ out further notice to any products herein to improve reliability, function or design. Motorola does not


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    PDF VP1204N TP8P08 5001D VP1206N 1208N 5002D 1209N VP1209N IRFD1Z3 equivalent 8N60 equivalent TP8N20 TP8N10 siemens semiconductor manual What is comparable with IRF 3205 2N6823 irf8408 MTM5N90 designers datasheet smps cook circuit

    UFN841

    Abstract: UFN842 ufn840 PED 32 UFN843
    Text: UFN840 UFN841 UFN842 UFN843 POWER MOSFET TRANSISTORS 500 Volt, 0.85 Ohm N-Channel FEATURES • • • • • • DESCRIPTION The Unitrode power MOSFET design utilizes the m ost advanced technology available. This e fficie n t design achieves a very low Rosiom and a high transconductance.


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    PDF UFN840 UFN841 UFN842 UFN843 UFN841 UFN842 PED 32 UFN843

    IRF 544 N MOSFET

    Abstract: Spice 2 computer models for hexfets 4af2NPP IR transistor D586 induction cooker fault finding circuit diagrams TRANSISTOR mos fet D482 electronics digest transistor D357 equivalent D515 transistor 1RF511
    Text: International S R ectifier HEXFET DAIABOOK POWER MOSFET APPLICATION AND PRODUCT DATA 1985 THIRD EDITION PUBLISHED BY INTERNATIONAL RECTIFIER, 233 KANSAS ST., EL SEGUNDO, CALIFORNIA 90245 The information presented in this DATABOOK is believed to be accurate and reliable. However, International Rectifier can assume no


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    PDF

    1rf830

    Abstract: 1rf840 RF822 IRFB40R IRF820R IRF830R J50 mosfet IRFS30 RF842 IRF820
    Text: HLAJRRIS IRF820/82 i/822/823 IRF820R/821R/822R/823R N-Channel Power MOSFETs Avalanche Energy Rated* August 1991 Fea tu res Package T 0 -2 2 0 A B TOP VIEW • 2.2 and 2.5A, 450V - 500V • f D S !0 0 = 3 -0 i l an d DRAIN FLAN GE) • Single Pulse Avalanche Energy Rated*


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    PDF IRFQ20/Q21/822/823 IRF820R/821R/822R/823R IRF820, RF821, 1RF822, IRF823 IRF820R, IRF821R, IRF822R IRF823R 1rf830 1rf840 RF822 IRFB40R IRF820R IRF830R J50 mosfet IRFS30 RF842 IRF820

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA Order this document by MMSF10N02Z/D SEMICONDUCTOR TECHNICAL DATA Advance Information M M S F10N 02Z Medium Power Surface Mount Products TMOS Single N -Channel w ith M onolithic Zener ESD Protected G ate M o to r o la P re fe rre d D e v ic e EZFETs are an advanced series of power MOSFETs which


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    PDF MMSF10N02Z/D 2PHX43416-0

    ufn440

    Abstract: UFN441
    Text: POWER MOSFET TRANSISTORS UFN440 UFN441 UFN442 UFN443 500 Volt, 0.85 Ohm N-Channel FEA TU RES D ESCRIPTIO N • • • • • The Unitrode power MOSFET design utilizes the most advanced technology available. This efficient design achieves a very low R dscow and a high transconductance.


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    PDF UFN440 UFN441 UFN442 UFN443 UFN441 UFN442

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA O rder this docum ent by M M SF10N02Z/D SEMICONDUCTOR TECHNICAL DATA D esigner’s Data Sheet M M SF10N 02Z Medium Power Surface Mount Products Motorola Preferred Device TMOS Single N-Channel w ith M onolithic Zener ESD Protected G ate EZFETs™ are an advanced series of power MOSFETs which


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    PDF SF10N02Z/D SF10N