MOSFET IRF740 AS SWITCH Search Results

IRF470

Abstract: IR2110 equivalent power MOSFET IRF740 driver circuit IR2110 gate driver for mosfet irf740 equivalent driver circuit for MOSFET IR2110 IR2112 equivalent gate drive circuit for power MOSFET IRF740 irf740 mosfet IRF740LC
Contextual Info: Index Design Tips DT 94-7A Low Gate Charge HEXFETs Simplify Gate Drive and Lower Cost Introduction Fast switching of power MOSFETs requires rapid transfer of the gate charge in a short period of time. High peak output current capability Control ICs can deliver high current spikes for fast switching, but the

IRF740PBF

Abstract: IRF740 irf740 mosfet SiHF740 SiHF740-E3
Contextual Info: IRF740, SiHF740 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 400 RDS(on) (Ω) VGS = 10 V Qg (Max.) (nC) 63 • Fast Switching Qgs (nC) 9.0 • Ease of Paralleling 32 • Simple Drive Requirements Qgd (nC) Configuration

power MOSFET IRF740 driver circuit

Contextual Info: IRF740, SiHF740 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 400 RDS(on) (Ω) VGS = 10 V Qg (Max.) (nC) 63 • Fast Switching Qgs (nC) 9.0 • Ease of Paralleling 32 • Simple Drive Requirements Qgd (nC) Configuration

power MOSFET IRF740 driver circuit

Abstract: IRF740 irf740 mosfet IRF740PBF SiHF740 SiHF740-E3
Contextual Info: IRF740, SiHF740 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 400 RDS(on) (Ω) VGS = 10 V Qg (Max.) (nC) 63 • Fast Switching Qgs (nC) 9.0 • Ease of Paralleling 32 • Simple Drive Requirements Qgd (nC) Configuration

Contextual Info: IRF740, SiHF740 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 400 RDS(on) (Ω) VGS = 10 V Qg (Max.) (nC) 63 • Fast Switching Qgs (nC) 9.0 • Ease of Paralleling 32 • Simple Drive Requirements Qgd (nC) Configuration

Contextual Info: IRF740, SiHF740 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 400 RDS(on) (Ω) VGS = 10 V Qg (Max.) (nC) 63 • Fast Switching Qgs (nC) 9.0 • Ease of Paralleling 32 • Simple Drive Requirements Qgd (nC) Configuration

irf740 application note

Abstract: IRF740 APPLICATION NOTES power MOSFET IRF740 driver circuit IRF740 SiHF740 IRF740 application SiHF740-E3 IRF740PBF SILICONIX IRF740
Contextual Info: IRF740, SiHF740 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 400 RDS(on) (Ω) VGS = 10 V Qg (Max.) (nC) 63 • Fast Switching Qgs (nC) 9.0 • Ease of Paralleling 32 • Simple Drive Requirements Qgd (nC) Configuration

power MOSFET IRF740

Contextual Info: IRF740 Data Sheet Title F74 bt A, 0V, 50 m, an- 10A, 400V, 0.550 Ohm, N-Channel Power MOSFET Features This N-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested, and guaranteed to withstand a specified level of

Contextual Info: IRF740, SiHF740 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 400 RDS(on) (Ω) VGS = 10 V Qg (Max.) (nC) 63 • Fast Switching Qgs (nC) 9.0 • Ease of Paralleling 32 • Simple Drive Requirements Qgd (nC) Configuration

Contextual Info: IRF740, SiHF740 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 400 RDS(on) (Ω) VGS = 10 V Qg (Max.) (nC) 63 • Fast Switching Qgs (nC) 9.0 • Ease of Paralleling 32 • Simple Drive Requirements Qgd (nC) Configuration

Contextual Info: IRF740, SiHF740 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 400 RDS(on) (Ω) VGS = 10 V Qg (Max.) (nC) 63 • Fast Switching Qgs (nC) 9.0 • Ease of Paralleling 32 • Simple Drive Requirements Qgd (nC) Configuration

power MOSFET IRF740 driver circuit

Contextual Info: IRF740, SiHF740 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 400 RDS(on) (Ω) VGS = 10 V Qg (Max.) (nC) 63 • Fast Switching Qgs (nC) 9.0 • Ease of Paralleling 32 • Simple Drive Requirements Qgd (nC) Configuration

IRF740

Contextual Info: IRF740, SiHF740 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 400 RDS(on) (Ω) VGS = 10 V Qg (Max.) (nC) 63 • Fast Switching Qgs (nC) 9.0 • Ease of Paralleling 32 • Simple Drive Requirements Qgd (nC) Configuration

Contextual Info: IRF740, SiHF740 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 400 RDS(on) (Ω) VGS = 10 V Qg (Max.) (nC) 63 • Fast Switching Qgs (nC) 9.0 • Ease of Paralleling 32 • Simple Drive Requirements Qgd (nC) Configuration

irf740 mosfet

Abstract: irf740 application note irf740 MOSFET IRF740 as switch TA17424 TB334
Contextual Info: IRF740 Data Sheet January 2002 10A, 400V, 0.550 Ohm, N-Channel Power MOSFET This N-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. All of

power MOSFET IRF740

Abstract: power MOSFET IRF740 driver circuit irf740 mosfet MOSFET IRF740 MOSFET IRF740 as switch PN channel MOSFET 10A Power MOSFET 50V 10A IRF740
Contextual Info: IRF740 A dvanced Power MOSFET FEATURES BVDSS — 400 V ♦ Avalanche Rugged Technology ♦ Rugged Gate Oxide Technology ^D S o n = 0 -5 5 ÌÌ ♦ Lower Input Capacitance lD = 10 A ♦ Improved Gate Charge ♦ Extended Safe Operating Area ♦ Lower Leakage Current: 10|xA (Max.) @ V DS = 400V

irf740 mosfet

Abstract: power MOSFET IRF740 transistor IRF740 TA17424 IRF740 TB334
Contextual Info: IRF740 Data Sheet July 1999 10A, 400V, 0.550 Ohm, N-Channel Power MOSFET This N-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. All of

MOSFET IRF740 as switch

Abstract: IRF740 irf740 mosfet power MOSFET IRF740 transistor equivalent irf740
Contextual Info: DC COMPONENTS CO., LTD. IRF740 DISCRETE SEMICONDUCTORS R TECHNICAL SPECIFICATIONS OF N-CHANNEL POWER MOSFET VDSS = 400 Volts RDS on = 0.55 Ohm ID = 10 Amperes Features * Repetitive Avalanche Rated * Fast Switching * Ease of Paralleling * Simple Drive Requirements

mosfet 1RF740

Abstract: 1rf740 IRF740 IRF741 irf740 mosfet IRF742 power MOSFET IRF740 IRF743
Contextual Info: -— - Standard Power MOSFETs File Number 2311 IRF740, IRF741, IRF742, IRF743 Power MOS Field-Effect Transistors N-Channel Enhancement-Mode Power Field-Effect Transistors

irf740 spice model

Abstract: IRF740
Contextual Info: HE D I 4âSS452 QÛ0ÔS44 0 | Data Sheet No. PD-9.375G INTERNATIONAL RECTIFIER T INTERNATIONAL. RECTIFIER l O R REPETITIVE AVALANCHE AND dv/dt RATED* HEXFET TRANSISTORS IRF740 IRF74Ì IRF742 N-CHANNEL IRF743 Product Summary 400 Volt, 0.55 Ohm HEXFET T0-220AB Plastic Package

IRF740

Abstract: irf740n power MOSFET IRF740 irf740 mosfet MOSFET IRF740
Contextual Info: IRF740 N - CHANNEL 400V - 0.48 Ω - 10 A - TO-220 PowerMESH MOSFET TYPE IRF740 • ■ ■ ■ ■ V DSS R DS on ID 400 V < 0.55 Ω 10 A TYPICAL RDS(on) = 0.48 Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED VERY LOW INTRINSIC CAPACITANCES

SEC IRF740

Abstract: power MOSFET IRF740 driver circuit
Contextual Info: IRF740 Advanced Power MOSFET FEATURES B ^ dss - 400 V ^ D S o n = 0 -5 5 Q ♦ Avalanche Rugged Technology ♦ Rugged Gate Oxide Technology ♦ Lower Input Capacitance lD = 10 A ♦ Improved Gate Charge ♦ Extended Safe Operating Area ♦ Lower Leakage Current: 10|iA (Max.) @ V DS = 400V

IRF740

Abstract: irf740 mosfet irf740n power MOSFET IRF740 transistor equivalent irf740
Contextual Info: IRF740  N - CHANNEL 400V - 0.48 Ω - 10 A - TO-220 PowerMESH MOSFET TYPE IRF740 • ■ ■ ■ ■ V DSS R DS on ID 400 V < 0.55 Ω 10 A TYPICAL RDS(on) = 0.48 Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED VERY LOW INTRINSIC CAPACITANCES

Contextual Info: IRF740 Semiconductor Data Sheet July 1999 10A, 400V, 0.550 Ohm, N-Channel Power MOSFET This N-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested, and guaranteed to withstand a specified level of