Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    MOSFET IRF740 AS SWITCH Search Results

    MOSFET IRF740 AS SWITCH Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TCK424G Toshiba Electronic Devices & Storage Corporation MOSFET Gate Driver IC, 2.7 to 28 V, External MOSFET Gate drive / Inrush current reducing, WCSP6G Visit Toshiba Electronic Devices & Storage Corporation
    TCK425G Toshiba Electronic Devices & Storage Corporation MOSFET Gate Driver IC, 2.7 to 28 V, External MOSFET Gate drive / Inrush current reducing, WCSP6G Visit Toshiba Electronic Devices & Storage Corporation
    TCK423G Toshiba Electronic Devices & Storage Corporation MOSFET Gate Driver IC, 2.7 to 28 V, External MOSFET Gate drive / Inrush current reducing, WCSP6G Visit Toshiba Electronic Devices & Storage Corporation
    TCK422G Toshiba Electronic Devices & Storage Corporation MOSFET Gate Driver IC, 2.7 to 28 V, External MOSFET Gate drive / Inrush current reducing, WCSP6G Visit Toshiba Electronic Devices & Storage Corporation
    MG800FXF1JMS3 Toshiba Electronic Devices & Storage Corporation N-ch SiC MOSFET Module, 3300 V, 800 A, iXPLV, High-side: SiC SBD、Low-side: SiC MOSFET Visit Toshiba Electronic Devices & Storage Corporation

    MOSFET IRF740 AS SWITCH Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    IRF470

    Abstract: IR2110 equivalent power MOSFET IRF740 driver circuit IR2110 gate driver for mosfet irf740 equivalent driver circuit for MOSFET IR2110 IR2112 equivalent gate drive circuit for power MOSFET IRF740 irf740 mosfet IRF740LC
    Text: Index Design Tips DT 94-7A Low Gate Charge HEXFETs Simplify Gate Drive and Lower Cost Introduction Fast switching of power MOSFETs requires rapid transfer of the gate charge in a short period of time. High peak output current capability Control ICs can deliver high current spikes for fast switching, but the


    Original     		AN-944A: AN-937B: IRF470 IR2110 equivalent power MOSFET IRF740 driver circuit IR2110 gate driver for mosfet irf740 equivalent driver circuit for MOSFET IR2110 IR2112 equivalent gate drive circuit for power MOSFET IRF740 irf740 mosfet IRF740LC PDF

    IRF740PBF

    Abstract: IRF740 irf740 mosfet SiHF740 SiHF740-E3
    Text: IRF740, SiHF740 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 400 RDS(on) (Ω) VGS = 10 V Qg (Max.) (nC) 63 • Fast Switching Qgs (nC) 9.0 • Ease of Paralleling 32 • Simple Drive Requirements Qgd (nC) Configuration


    Original     		IRF740, SiHF740 O-220 O-220 18-Jul-08 IRF740PBF IRF740 irf740 mosfet SiHF740-E3 PDF

    power MOSFET IRF740 driver circuit

    Abstract: No abstract text available
    Text: IRF740, SiHF740 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 400 RDS(on) (Ω) VGS = 10 V Qg (Max.) (nC) 63 • Fast Switching Qgs (nC) 9.0 • Ease of Paralleling 32 • Simple Drive Requirements Qgd (nC) Configuration


    Original     		IRF740, SiHF740 O-220 O-220 12-Mar-07 power MOSFET IRF740 driver circuit PDF

    power MOSFET IRF740 driver circuit

    Abstract: IRF740 irf740 mosfet IRF740PBF SiHF740 SiHF740-E3
    Text: IRF740, SiHF740 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 400 RDS(on) (Ω) VGS = 10 V Qg (Max.) (nC) 63 • Fast Switching Qgs (nC) 9.0 • Ease of Paralleling 32 • Simple Drive Requirements Qgd (nC) Configuration


    Original     		IRF740, SiHF740 O-220 O-220 18-Jul-08 power MOSFET IRF740 driver circuit IRF740 irf740 mosfet IRF740PBF SiHF740-E3 PDF

    Untitled

    Abstract: No abstract text available
    Text: IRF740, SiHF740 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 400 RDS(on) (Ω) VGS = 10 V Qg (Max.) (nC) 63 • Fast Switching Qgs (nC) 9.0 • Ease of Paralleling 32 • Simple Drive Requirements Qgd (nC) Configuration


    Original     		IRF740, SiHF740 2002/95/EC O-220AB O-220AB 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 PDF

    Untitled

    Abstract: No abstract text available
    Text: IRF740, SiHF740 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 400 RDS(on) (Ω) VGS = 10 V Qg (Max.) (nC) 63 • Fast Switching Qgs (nC) 9.0 • Ease of Paralleling 32 • Simple Drive Requirements Qgd (nC) Configuration


    Original     		IRF740, SiHF740 2002/95/EC O-220AB 11-Mar-11 PDF

    irf740 application note

    Abstract: IRF740 APPLICATION NOTES power MOSFET IRF740 driver circuit IRF740 SiHF740 IRF740 application SiHF740-E3 IRF740PBF SILICONIX IRF740
    Text: IRF740, SiHF740 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 400 RDS(on) (Ω) VGS = 10 V Qg (Max.) (nC) 63 • Fast Switching Qgs (nC) 9.0 • Ease of Paralleling 32 • Simple Drive Requirements Qgd (nC) Configuration


    Original     		IRF740, SiHF740 2002/95/EC O-220AB O-220AB 11-Mar-11 irf740 application note IRF740 APPLICATION NOTES power MOSFET IRF740 driver circuit IRF740 IRF740 application SiHF740-E3 IRF740PBF SILICONIX IRF740 PDF

    power MOSFET IRF740

    Abstract: No abstract text available
    Text: IRF740 Data Sheet Title F74 bt A, 0V, 50 m, an- 10A, 400V, 0.550 Ohm, N-Channel Power MOSFET Features This N-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested, and guaranteed to withstand a specified level of


    Original     		IRF740 TA17424 IRF740 power MOSFET IRF740 PDF

    Untitled

    Abstract: No abstract text available
    Text: IRF740, SiHF740 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 400 RDS(on) (Ω) VGS = 10 V Qg (Max.) (nC) 63 • Fast Switching Qgs (nC) 9.0 • Ease of Paralleling 32 • Simple Drive Requirements Qgd (nC) Configuration


    Original     		IRF740, SiHF740 2002/95/EC O-220AB O-220AB 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A PDF

    Untitled

    Abstract: No abstract text available
    Text: IRF740, SiHF740 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 400 RDS(on) (Ω) VGS = 10 V Qg (Max.) (nC) 63 • Fast Switching Qgs (nC) 9.0 • Ease of Paralleling 32 • Simple Drive Requirements Qgd (nC) Configuration


    Original     		IRF740, SiHF740 2002/95/EC O-220AB O-220AB 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A PDF

    Untitled

    Abstract: No abstract text available
    Text: IRF740, SiHF740 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 400 RDS(on) (Ω) VGS = 10 V Qg (Max.) (nC) 63 • Fast Switching Qgs (nC) 9.0 • Ease of Paralleling 32 • Simple Drive Requirements Qgd (nC) Configuration


    Original     		IRF740, SiHF740 2002/95/EC O-220AB O-220AB 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A PDF

    power MOSFET IRF740 driver circuit

    Abstract: No abstract text available
    Text: IRF740, SiHF740 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 400 RDS(on) (Ω) VGS = 10 V Qg (Max.) (nC) 63 • Fast Switching Qgs (nC) 9.0 • Ease of Paralleling 32 • Simple Drive Requirements Qgd (nC) Configuration


    Original     		IRF740, SiHF740 2002/95/EC O-220AB O-220AB 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A power MOSFET IRF740 driver circuit PDF

    IRF740

    Abstract: No abstract text available
    Text: IRF740, SiHF740 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 400 RDS(on) (Ω) VGS = 10 V Qg (Max.) (nC) 63 • Fast Switching Qgs (nC) 9.0 • Ease of Paralleling 32 • Simple Drive Requirements Qgd (nC) Configuration


    Original     		IRF740, SiHF740 2002/95/EC O-220AB 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 IRF740 PDF

    Untitled

    Abstract: No abstract text available
    Text: IRF740, SiHF740 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 400 RDS(on) (Ω) VGS = 10 V Qg (Max.) (nC) 63 • Fast Switching Qgs (nC) 9.0 • Ease of Paralleling 32 • Simple Drive Requirements Qgd (nC) Configuration


    Original     		IRF740, SiHF740 2002/95/EC O-220AB 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 PDF

    irf740 mosfet

    Abstract: power MOSFET IRF740 transistor IRF740 TA17424 IRF740 TB334
    Text: IRF740 Data Sheet July 1999 10A, 400V, 0.550 Ohm, N-Channel Power MOSFET This N-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. All of


    Original     		IRF740 O-220AB irf740 mosfet power MOSFET IRF740 transistor IRF740 TA17424 IRF740 TB334 PDF

    MOSFET IRF740 as switch

    Abstract: IRF740 irf740 mosfet power MOSFET IRF740 transistor equivalent irf740
    Text: DC COMPONENTS CO., LTD. IRF740 DISCRETE SEMICONDUCTORS R TECHNICAL SPECIFICATIONS OF N-CHANNEL POWER MOSFET VDSS = 400 Volts RDS on = 0.55 Ohm ID = 10 Amperes Features * Repetitive Avalanche Rated * Fast Switching * Ease of Paralleling * Simple Drive Requirements


    Original     		IRF740 O-220AB MOSFET IRF740 as switch IRF740 irf740 mosfet power MOSFET IRF740 transistor equivalent irf740 PDF

    IRF740

    Abstract: irf740n power MOSFET IRF740 irf740 mosfet MOSFET IRF740
    Text: IRF740 N - CHANNEL 400V - 0.48 Ω - 10 A - TO-220 PowerMESH MOSFET TYPE IRF740 • ■ ■ ■ ■ V DSS R DS on ID 400 V < 0.55 Ω 10 A TYPICAL RDS(on) = 0.48 Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED VERY LOW INTRINSIC CAPACITANCES


    Original     		IRF740 O-220 O-220 IRF740 irf740n power MOSFET IRF740 irf740 mosfet MOSFET IRF740 PDF

    IRF740

    Abstract: irf740 mosfet irf740n power MOSFET IRF740 transistor equivalent irf740
    Text: IRF740  N - CHANNEL 400V - 0.48 Ω - 10 A - TO-220 PowerMESH MOSFET TYPE IRF740 • ■ ■ ■ ■ V DSS R DS on ID 400 V < 0.55 Ω 10 A TYPICAL RDS(on) = 0.48 Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED VERY LOW INTRINSIC CAPACITANCES


    Original     		IRF740 O-220 IRF740 irf740 mosfet irf740n power MOSFET IRF740 transistor equivalent irf740 PDF

    1RF740

    Abstract: mosfet 1RF740 IRF740 ir IRF740 ScansUX1020 ScansUX102 International Rectifier IRF740 irf740 mosfet
    Text: PD-9.375H International lïsRi Rectifier IRF740 HEXFET Power MOSFET • • • • • Dynamic dv/dt Rating Repetitive Avalanche Rated Fast Switching Ease of Paralleling Simple Drive Requirements V DSS = 400V ^DS on = 0 - 5 5 0 lD = 10A Description Third Generation HEXFETs from international Rectifier provide the designer


    OCR Scan     		O-220 L50KQ 1RF740 mosfet 1RF740 IRF740 ir IRF740 ScansUX1020 ScansUX102 International Rectifier IRF740 irf740 mosfet PDF

    power MOSFET IRF740

    Abstract: power MOSFET IRF740 driver circuit irf740 mosfet MOSFET IRF740 MOSFET IRF740 as switch PN channel MOSFET 10A Power MOSFET 50V 10A IRF740
    Text: IRF740 A dvanced Power MOSFET FEATURES BVDSS — 400 V ♦ Avalanche Rugged Technology ♦ Rugged Gate Oxide Technology ^D S o n = 0 -5 5 ÌÌ ♦ Lower Input Capacitance lD = 10 A ♦ Improved Gate Charge ♦ Extended Safe Operating Area ♦ Lower Leakage Current: 10|xA (Max.) @ V DS = 400V


    OCR Scan     		IRF740 power MOSFET IRF740 power MOSFET IRF740 driver circuit irf740 mosfet MOSFET IRF740 MOSFET IRF740 as switch PN channel MOSFET 10A Power MOSFET 50V 10A IRF740 PDF

    mosfet 1RF740

    Abstract: 1rf740 IRF740 IRF741 irf740 mosfet IRF742 power MOSFET IRF740 IRF743
    Text: -— - Standard Power MOSFETs File Number 2311 IRF740, IRF741, IRF742, IRF743 Power MOS Field-Effect Transistors N-Channel Enhancement-Mode Power Field-Effect Transistors


    OCR Scan     		IRF740, IRF741, IRF742, IRF743 IRF743 IRF74 75BVdss mosfet 1RF740 1rf740 IRF740 IRF741 irf740 mosfet IRF742 power MOSFET IRF740 PDF

    irf740 spice model

    Abstract: IRF740
    Text: HE D I 4âSS452 QÛ0ÔS44 0 | Data Sheet No. PD-9.375G INTERNATIONAL RECTIFIER T INTERNATIONAL. RECTIFIER l O R REPETITIVE AVALANCHE AND dv/dt RATED* HEXFET TRANSISTORS IRF740 IRF74Ì IRF742 N-CHANNEL IRF743 Product Summary 400 Volt, 0.55 Ohm HEXFET T0-220AB Plastic Package


    OCR Scan     		SS452 IRF740 IRF74Ã IRF742 IRF743 T0-220AB IRF741 C-299 irf740 spice model IRF740 PDF

    SEC IRF740

    Abstract: power MOSFET IRF740 driver circuit
    Text: IRF740 Advanced Power MOSFET FEATURES B ^ dss - 400 V ^ D S o n = 0 -5 5 Q ♦ Avalanche Rugged Technology ♦ Rugged Gate Oxide Technology ♦ Lower Input Capacitance lD = 10 A ♦ Improved Gate Charge ♦ Extended Safe Operating Area ♦ Lower Leakage Current: 10|iA (Max.) @ V DS = 400V


    OCR Scan     		IRF740 SEC IRF740 power MOSFET IRF740 driver circuit PDF

    Untitled

    Abstract: No abstract text available
    Text: IRF740 Semiconductor Data Sheet July 1999 10A, 400V, 0.550 Ohm, N-Channel Power MOSFET This N-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested, and guaranteed to withstand a specified level of


    OCR Scan     		IRF740 O-220AB PDF