ISL6622
Abstract: ISL6622CBZ ISL6622CRZ ISL6622IBZ ISL6622IRZ TB363 TB417 VR11 power supply 12v, 7v, 5v
Text: ISL6622 Data Sheet October 30, 2008 VR11.1 Compatible Synchronous Rectified Buck MOSFET Drivers Features • Dual MOSFET Drives for Synchronous Rectified Bridge The ISL6622 is a high frequency MOSFET driver designed to drive upper and lower power N-Channel MOSFETs in a
|
Original
|
ISL6622
ISL6622
FN6470
ISL6622CBZ
ISL6622CRZ
ISL6622IBZ
ISL6622IRZ
TB363
TB417
VR11
power supply 12v, 7v, 5v
|
PDF
|
TO247AD
Abstract: TO247AD package 40n60c CoolMOS Power Transistor ISOPLUS247
Text: IXKR 40N60C CoolMOS Power MOSFET in ISOPLUS247TM Package N-Channel Enhancement Mode Low RDSon, High VDSS MOSFET Package with Electrically Isolated Base VDSS ID25 RDS on 600 V 38 A Ω 70 mΩ D G Preliminary data S ISOPLUS 247TM E153432 MOSFET Conditions
|
Original
|
40N60C
ISOPLUS247TM
247TM
E153432
TO247AD
TO247AD package
40n60c
CoolMOS Power Transistor
ISOPLUS247
|
PDF
|
APV1121S
Abstract: No abstract text available
Text: PHOTOVOLTAIC MOSFET DRIVER APV1,2 PHOTOVOLTAIC MOSFET DRIVER (APV1,2) PHOTOVOLTAIC MOSFET DRIVER 6 Control circuit 1 2 4 1 4 Control circuit 3 3 2 FEATURES TYPICAL APPLICATIONS 1. High-speed switching Since release time is 0.1 ms, the MOSFET can be turned off quickly in
|
Original
|
000pF;
APV2121S
APV2111V
APV1122
APV1121S
APV1121S
|
PDF
|
Untitled
Abstract: No abstract text available
Text: LM2724A LM2724A High Speed 3A Synchronous MOSFET Driver Literature Number: SNVS242A LM2724A High Speed 3A Synchronous MOSFET Driver chronization operation of the bottom MOSFET can be disabled by pulling the SYNC pin to ground. General Description The LM2724A is a dual N-channel MOSFET driver which can
|
Original
|
LM2724A
LM2724A
SNVS242A
|
PDF
|
high-speed power mosfet 2Mhz
Abstract: LM27212 5Vto28V
Text: LM27222 LM27222 High-Speed 4.5A Synchronous MOSFET Driver Literature Number: SNVS306A LM27222 High-Speed 4.5A Synchronous MOSFET Driver General Description Features The LM27222 is a dual N-channel MOSFET driver designed to drive MOSFETs in push-pull configurations as typically
|
Original
|
LM27222
LM27222
SNVS306A
high-speed power mosfet 2Mhz
LM27212
5Vto28V
|
PDF
|
UPS 380v
Abstract: 20n60c power switching
Text: CoolMOSTM Power MOSFET IXKC 20N60C in ISOPLUS220TM Package Electrically Isolated Back Surface N-Channel Enhancement Mode Low RDS on , Superjunction MOSFET VDSS = 600 V ID25 = 14 A Ω RDS(on) = 190 mΩ Preliminary Data Sheet Symbol Test Conditions ISOPLUS 220LVTM
|
Original
|
20N60C
ISOPLUS220TM
220LVTM
E153432
728B1
065B1
123B1
UPS 380v
20n60c
power switching
|
PDF
|
ENA1510A
Abstract: a15102 40v 7.5a P-Channel N-Channel
Text: ECH8668 Ordering number : ENA1510A SANYO Semiconductors DATA SHEET N-Channel and P-Channel Silicon MOSFETs ECH8668 General-Purpose Switching Device Applications Features • • • • The ECH8668 incorporates an N-channel MOSFET and a P-channel MOSFET that feature low ON-resistance and
|
Original
|
ENA1510A
ECH8668
ECH8668
PW10s,
A1510-8/8
ENA1510A
a15102
40v 7.5a P-Channel N-Channel
|
PDF
|
DMS3016SS
Abstract: DMS3016SSSA
Text: DMS3016SSSA N-CHANNEL ENHANCEMENT MODE MOSFET WITH SCHOTTKY DIODE Features Mechanical Data • • • • • • DIOFET utilizes a unique patented process to monolithically integrate a MOSFET and a Schottky in a single die to deliver: • Low RDS ON - minimizes conduction losses
|
Original
|
DMS3016SSSA
AEC-Q101
DS35073
621-MMBT3904LP-7B
MMBT3904LP-7B
DMS3016SS
DMS3016SSSA
|
PDF
|
MRF9030N
Abstract: No abstract text available
Text: Freescale Semiconductor Technical Data Document Number: MRF9030N Rev. 11, 9/2008 RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET MRF9030NBR1 945 MHz, 30 W, 26 V LATERAL N - CHANNEL BROADBAND RF POWER MOSFET • Typical Performance at 945 MHz, 26 Volts
|
Original
|
MRF9030N
MRF9030NBR1
MRF9030N
|
PDF
|
019N03L
Abstract: BSZ019N03LS
Text: n-Channel Power MOSFET OptiMOS BSZ019N03LS Data Sheet 2.1, 2011-09-21 Final Industrial & Multimarket OptiMOS™ Power-MOSFET BSZ019N03LS 1 Description OptiMOS™30V products are class leading power MOSFETs for highest power density and energy efficient solutions. Ultra low gate and output charges together
|
Original
|
BSZ019N03LS
OptiMOSTM30V
726-BSZ019N03LS
019N03L
BSZ019N03LS
|
PDF
|
dmn5l06dwk
Abstract: No abstract text available
Text: DMN5L06DWK DUAL N-CHANNEL ENHANCEMENT MODE MOSFET • • • • • • • • • • • Mechanical Data • • Dual N-Channel MOSFET Low On-Resistance 1.0V max Very Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed Low Input/Output Leakage
|
Original
|
DMN5L06DWK
AEC-Q101
OT363
J-STD-020
MIL-STD-202,
DS30930
621-DMN5L06DWK-7
DMN5L06DWK-7
dmn5l06dwk
|
PDF
|
IXFN170N10
Abstract: 170N10 125OC IXFK170N10
Text: HiPerFETTM Power MOSFET IXFN170N10 IXFK170N10 VDSS I D25 RDS on trr 100V 100V 170A 170A 10mW 10mW 200ns 200ns Single MOSFET Die TO-264 AA (IXFK) Preliminary data Symbol Test Conditions Maximum Ratings IXFK IXFN 170N10 170N10 VDSS VDGR T J = 25°C to 150°C
|
Original
|
IXFN170N10
IXFK170N10
200ns
O-264
170N10
ID125
Figure10.
IXFN170N10
170N10
125OC
IXFK170N10
|
PDF
|
LM5112MY
Abstract: LM5112
Text: LM5112 LM5112 Tiny 7A MOSFET Gate Driver Literature Number: SNVS234B LM5112 Tiny 7A MOSFET Gate Driver General Description Features The LM5112 MOSFET gate driver provides high peak gate drive current in the tiny LLP-6 package SOT23 equivalent footprint or an 8-Lead exposed-pad MSOP package, with
|
Original
|
LM5112
LM5112
SNVS234B
LM5112MY
|
PDF
|
2N7002PT
Abstract: No abstract text available
Text: 2N7002PT 60 V, 310 mA N-channel Trench MOSFET Rev. 1 — 2 July 2010 Product data sheet 1. Product profile 1.1 General description N-channel enhancement mode Field-Effect Transistor FET in a small SOT416 (SC-75) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
|
Original
|
2N7002PT
OT416
SC-75)
AEC-Q101
771-2N7002PT-115
2N7002PT
|
PDF
|
|
|
2N7002BKW
Abstract: 2n7002bk TRANSISTOR SMD MARKING CODE 50 006-AA
Text: 2N7002BKW 60 V, 310 mA N-channel Trench MOSFET Rev. 1 — 17 June 2010 Product data sheet 1. Product profile 1.1 General description N-channel enhancement mode Field-Effect Transistor FET in a small SOT323 (SC-70) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
|
Original
|
2N7002BKW
OT323
SC-70)
AEC-Q101
771-2N7002BKW115
2N7002BKW
2n7002bk
TRANSISTOR SMD MARKING CODE 50
006-AA
|
PDF
|
Si2303CDS
Abstract: No abstract text available
Text: Si2303CDS Vishay Siliconix P-Channel 30-V D-S MOSFET FEATURES MOSFET PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.190 at VGS = - 10 V - 2.7 0.330 at VGS = - 4.5 V - 2.1 VDS (V) - 30 • Halogen-free According to IEC 61249-2-21 Available • TrenchFET Power MOSFET
|
Original
|
Si2303CDS
O-236
OT-23)
Si2303CDS-T1-E3
Si2303CDS-T1-GE3
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
|
PDF
|
Untitled
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD 2N60 MOSFET 2Amps, 600/650 Volts N-CHANNEL MOSFET 1 TO- 251 1 DESCRIPTION The UTC 2N60 is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged
|
Original
|
O-220
QW-R502-053
|
PDF
|
Untitled
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD 22N60 Power MOSFET HEXFET POWER MOSFET DESCRIPTION As the SMPS MOSFET, the UTC 22N60 uses UTC’s advanced technology to provide excellent RDS ON , low gate charge and operation with low gate voltages. This device is suitable for use as a load switch or in PWM applications.
|
Original
|
22N60
22N60
O-247
22N60L-T47-T
22N60G-T47-T
QW-R502-216
|
PDF
|
Untitled
Abstract: No abstract text available
Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SJ687 SWITCHING P-CHANNEL POWER MOSFET DESCRIPTION The 2SJ687 is P-channel MOSFET device and a excellent switch that can be driven by a low power-supply voltage. FEATURES • Low on-state resistance RDS on 1 = 7.0 mΩ MAX. (VGS = −4.5 V, ID = −10 A)
|
Original
|
2SJ687
2SJ687
2SJ687-ZK-E1-AY
2SJ687-ZK-E2-AY
O-252
|
PDF
|
202227A
Abstract: No abstract text available
Text: DATA SHEET AAT4250 Slew Rate Controlled Load Switch General Description Features The AAT4250 SmartSwitch is a member of Skyworks' Application Specific Power MOSFET ASPM product family. It is a slew rate controlled P-channel MOSFET power switch designed for high-side load switching applications. This switch operates with an input voltage range
|
Original
|
AAT4250
AAT4250
02227A
202227A
|
PDF
|
Untitled
Abstract: No abstract text available
Text: LF PA K 56 PSMN3R0-30YLD N-channel 30 V, 3.0 mΩ logic level MOSFET in LFPAK56 using NextPowerS3 Technology 18 February 2014 Product data sheet 1. General description Logic level gate drive N-channel enhancement mode MOSFET in LFPAK56 package. NextPowerS3 portfolio utilising NXP’s unique “SchottkyPlus” technology delivers
|
Original
|
PSMN3R0-30YLD
LFPAK56
LFPAK56
|
PDF
|
Untitled
Abstract: No abstract text available
Text: RSL020P03 Transistors 4V Drive Pch MOSFET RSL020P03 zStructure Silicon P-channel MOSFET zDimensions Unit : mm TUMT6 0.2Max. zFeatures 1) Low On-resistance. 2) High speed switching. zApplications Switching Abbreviated symbol : SL zPackaging specifications
|
Original
|
RSL020P03
|
PDF
|
PSMN4
Abstract: No abstract text available
Text: TO -2 20F PSMN4R6-100XS N-channel 100V 4.6 mΩ standard level MOSFET in TO220F SOT186A Rev. 1 — 3 July 2012 Product data sheet 1. Product profile 1.1 General description Standard level N-channel MOSFET in TO220F (SOT186A) package qualified to 175C. This product is designed and qualified for use in a wide range of industrial,
|
Original
|
PSMN4R6-100XS
O220F
OT186A)
PSMN4
|
PDF
|
24N100
Abstract: 23N10 125OC
Text: HiPerFETTM Power MOSFET VDSS ID25 RDS on 0.39 Ω 0.43 Ω IXFN 24N100 1000 V 24 A IXFN 23N100 1000 V 23 A têê ≤ 250 ns Single MOSFET Die Preliminary data sheet Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C, RGS = 1MΩ
|
Original
|
24N100
23N100
24N100
23N100
OT-227
E153432
125oC
23N10
125OC
|
PDF
|
