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    MOSFET C25 /C25 MOSFET Search Results

    MOSFET C25 /C25 MOSFET Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    MG800FXF1JMS3 Toshiba Electronic Devices & Storage Corporation N-ch SiC MOSFET Module, 3300 V, 800 A, iXPLV, High-side: SiC SBD、Low-side: SiC MOSFET Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation
    XPJ1R004PB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 40 V, 160 A, 0.001 Ω@10V, S-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK4K1A60F Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 600 V, 2.0 A, 4.1 Ohm@10V, TO-220SIS Visit Toshiba Electronic Devices & Storage Corporation

    MOSFET C25 /C25 MOSFET Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    C35 zener

    Abstract: z15 Diode glass 125 c35 fet MOSFET c25 / 0
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for broadband commercial and industrial applications with frequencies up to 470 MHz. The high gain and broadband performance of these


    Original     		PDF AN215A, MRF1570T1 MRF1570FT1 C35 zener z15 Diode glass 125 c35 fet MOSFET c25 / 0

    transistor c36

    Abstract: J117 surface mount TRANSISTOR zener diode c25 c38 transistor c25 mosfet MOSFET c25 /c25 mosfet
    Text: MOTOROLA Order this document by MRF1570T1/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistor N–Channel Enhancement–Mode Lateral MOSFET The MRF1570T1 is designed for broadband commercial and industrial applications with frequencies up to 470 MHz. The high gain and broadband


    Original     		PDF MRF1570T1/D MRF1570T1 MRF1570T1/D transistor c36 J117 surface mount TRANSISTOR zener diode c25 c38 transistor c25 mosfet MOSFET c25 /c25 mosfet

    MOSFET C25

    Abstract: c25 mosfet
    Text: CMLM0205 Multi Discrete Module SURFACE MOUNT N-CHANNEL MOSFET AND LOW VF SILICON SCHOTTKY DIODE SOT-563 CASE w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR CMLM0205 is a Multi Discrete Module™ consisting of a single N-Channel MOSFET and a Low VF Schottky diode


    Original     		PDF CMLM0205 OT-563 CMLM0205 OT-563 200mA 100mA 500mA 18-January MOSFET C25 c25 mosfet

    c25 mosfet

    Abstract: MOSFET C25 C25 schottky
    Text: CMLM0205 Multi Discrete Module SURFACE MOUNT SILICON N-CHANNEL MOSFET AND LOW VF SCHOTTKY DIODE SOT-563 CASE w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR CMLM0205 is a Multi Discrete Module™ consisting of a single N-Channel MOSFET and a low VF Schottky diode


    Original     		PDF CMLM0205 OT-563 CMLM0205 200mA 100mA 500mA c25 mosfet MOSFET C25 C25 schottky

    C38 diode

    Abstract: Z15 marking diode z15 Diode glass C36 marking diode marking c34 c38 transistor
    Text: Freescale Semiconductor Technical Data Rev. 4, 1/2005 RF Power Field Effect Transistors MRF1570NT1 MRF1570FNT1 MRF1570T1 MRF1570FT1 N - Channel Enhancement - Mode Lateral MOSFETs Designed for broadband commercial and industrial applications with frequencies up to 470 MHz. The high gain and broadband performance of these


    Original     		PDF 470on. AN215A, MRF1570NT1 MRF1570FNT1 MRF1570T1 MRF1570FT1 C38 diode Z15 marking diode z15 Diode glass C36 marking diode marking c34 c38 transistor

    MARKING CODE c25

    Abstract: c25 mosfet CMLM0205 sot-563 MOSFET D1 MOSFET C25
    Text: CMLM0205 Multi Discrete Module SURFACE MOUNT N-CHANNEL MOSFET AND LOW VF SILICON SCHOTTKY DIODE SOT-563 CASE w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR CMLM0205 is a Multi Discrete Module™ consisting of a single N-Channel MOSFET and a Low VF Schottky diode


    Original     		PDF CMLM0205 OT-563 CMLM0205 OT-563 200mA 100mA 500mA 18-January MARKING CODE c25 c25 mosfet sot-563 MOSFET D1 MOSFET C25

    MARKING CODE c25

    Abstract: C25 schottky MOSFET C25 c25 mosfet n mosfet low vgs CMLM0205 10V Schottky Diode
    Text: Central CMLM0205 M U LT I D I S C R E T E Semiconductor Corp. MODULE SURFACE MOUNT N-CHANNEL MOSFET AND LOW VF SILICON SCHOTTKY DIODE TM TM DESCRIPTION: The Central Semiconductor CMLM0205 is a Multi Discrete Module ™ consisting of a single N-Channel MOSFET and a Low VF Schottky diode


    Original     		PDF CMLM0205 CMLM0205 OT-563 OT-563 200mA, 400mA 100mA 500mA MARKING CODE c25 C25 schottky MOSFET C25 c25 mosfet n mosfet low vgs 10V Schottky Diode

    z15 Diode glass

    Abstract: Z14 j b5c15 C2233 AN721 diode zener c29 A113 J042 AN215A AN3263
    Text: Freescale Semiconductor Technical Data Document Number: MRF1570N Rev. 9, 6/2008 RF Power Field Effect Transistors MRF1570NT1 MRF1570FNT1 N - Channel Enhancement - Mode Lateral MOSFETs Designed for broadband commercial and industrial applications with frequencies up to 470 MHz. The high gain and broadband performance of these


    Original     		PDF MRF1570N MRF1570NT1 MRF1570FNT1 MRF1570NT1 z15 Diode glass Z14 j b5c15 C2233 AN721 diode zener c29 A113 J042 AN215A AN3263

    z15 Diode glass

    Abstract: 107 J117 surface mount TRANSISTOR MRF1570FT1 zener diode z7 b2 C35 zener
    Text: MOTOROLA Order this document by MRF1570T1/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for broadband commercial and industrial applications with frequencies up to 470 MHz. The high gain and broadband performance of these


    Original     		PDF MRF1570T1/D MRF1570T1 MRF1570FT1 z15 Diode glass 107 J117 surface mount TRANSISTOR zener diode z7 b2 C35 zener

    C35 zener

    Abstract: ZO 107 MA mosfet j117 diode zener c29 AN211A AN215A AN721 MRF1570FT1 MRF1570T1 J117 MOSFET
    Text: MOTOROLA Order this document by MRF1570T1/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for broadband commercial and industrial applications with frequencies up to 470 MHz. The high gain and broadband performance of these


    Original     		PDF MRF1570T1/D MRF1570T1 MRF1570FT1 C35 zener ZO 107 MA mosfet j117 diode zener c29 AN211A AN215A AN721 MRF1570FT1 J117 MOSFET

    Motorola 622 J112

    Abstract: J-174 MRF1570FT1 C2568
    Text: MOTOROLA Order this document by MRF1570T1/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line MRF1570T1 MRF1570FT1 MRF1570NT1 MRF1570FNT1 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs Designed for broadband commercial and industrial applications with frequencies up to 470 MHz. The high gain and broadband performance of these


    Original     		PDF MRF1570T1/D MRF1570T1 MRF1570FT1 MRF1570NT1 MRF1570FNT1 Motorola 622 J112 J-174 C2568

    C12 IC GATE

    Abstract: mosfet 440 mhz AN211A AN215A AN721 MRF1570FNT1 MRF1570FT1 MRF1570NT1 MRF1570T1 Motorola 622 J112
    Text: Freescale Semiconductor, Inc. MOTOROLA Order this document by MRF1570T1/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line MRF1570T1 MRF1570FT1 MRF1570NT1 MRF1570FNT1 RF Power Field Effect Transistors Freescale Semiconductor, Inc. N - Channel Enhancement - Mode Lateral MOSFETs


    Original     		PDF MRF1570T1/D MRF1570T1 MRF1570FT1 MRF1570NT1 MRF1570FNT1 MRF1570T1 MRF1570FT1 MRF1570NT1 C12 IC GATE mosfet 440 mhz AN211A AN215A AN721 MRF1570FNT1 Motorola 622 J112

    diode zener c26

    Abstract: A113 AN211A AN215A AN721 MRF1570FNT1 MRF1570N MRF1570NT1 MRF1570T1 mrf1570
    Text: Freescale Semiconductor Technical Data Document Number: MRF1570N Rev. 8, 9/2006 RF Power Field Effect Transistors MRF1570NT1 MRF1570FNT1 N - Channel Enhancement - Mode Lateral MOSFETs Designed for broadband commercial and industrial applications with frequencies up to 470 MHz. The high gain and broadband performance of these


    Original     		PDF MRF1570N MRF1570NT1 MRF1570FNT1 MRF1570NT1 diode zener c26 A113 AN211A AN215A AN721 MRF1570FNT1 MRF1570N MRF1570T1 mrf1570

    Untitled

    Abstract: No abstract text available
    Text: Document Number: MRF1570N Rev. 10, 6/2009 Freescale Semiconductor Technical Data RF Power Field Effect Transistors MRF1570NT1 MRF1570FNT1 N - Channel Enhancement - Mode Lateral MOSFETs Designed for broadband commercial and industrial applications with frequencies up to 470 MHz. The high gain and broadband performance of these


    Original     		PDF MRF1570N MRF1570NT1 MRF1570FNT1 MRF1570NT1

    J042

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data MRF1570T1 Rev. 5, 3/2005 RF Power Field Effect Transistors MRF1570NT1 MRF1570FNT1 MRF1570T1 MRF1570FT1 N−Channel Enhancement−Mode Lateral MOSFETs Designed for broadband commercial and industrial applications with frequencies up to 470 MHz. The high gain and broadband performance of these


    Original     		PDF MRF1570T1 MRF1570NT1 MRF1570FNT1 MRF1570FT1 J042

    zener diode marking c24

    Abstract: transistor c36 j063
    Text: Freescale Semiconductor Technical Data Document Number: MRF1570N Rev. 7, 5/2006 RF Power Field Effect Transistors MRF1570NT1 MRF1570FNT1 N - Channel Enhancement - Mode Lateral MOSFETs Designed for broadband commercial and industrial applications with frequencies up to 470 MHz. The high gain and broadband performance of these


    Original     		PDF MRF1570N MRF1570NT1 MRF1570FNT1 MRF1570N zener diode marking c24 transistor c36 j063

    Si2325

    Abstract: PA2720 DC1317A-H FDMC8854 si7818 DC1317A DC1317A-A LT1952 power supply 100v 30a schematic 1317a
    Text: QUICK START GUIDE FOR DEMONSTRATION CIRCUIT 1317A-E ACTIVE RESET ISOLATED DC/DC POWER CONVERTER LT1952 DESCRIPTION Demonstration circuit 1317A-E is isolated input to high current output 1/8th Brick footprint converter featuring the LT 1952 switching controller with Active Reset circuit. The Active Reset circuit can improve the efficiency in wide input voltage applications. Also, the Active Reset allows the implementation of self-driven synchronous secondary rectifiers


    Original     		PDF 317A-E LT1952 317A-E DC1317A-E 260kHz DC1317 100uF, DC1317A Si2325 PA2720 DC1317A-H FDMC8854 si7818 DC1317A-A LT1952 power supply 100v 30a schematic 1317a

    NT 407F

    Abstract: SM0603 35ME330AX SANYO RoHS ISL8104 ISL8104EVAL1Z TB417 BSC030N03LS BSC080N03LS IHLP5050FD-R68 MOSFET TEST SIMPLE Procedures
    Text: Using the ISL8104 PWM Controller Evaluation Board Application Note Introduction The ISL8104 is a simple single-phase PWM controller for a synchronous buck converter with integrated MOSFET driver that operates from +8V to +14.4V bias supply voltage. The


    Original     		PDF ISL8104 ISL8104EVAL2Z NT 407F SM0603 35ME330AX SANYO RoHS ISL8104EVAL1Z TB417 BSC030N03LS BSC080N03LS IHLP5050FD-R68 MOSFET TEST SIMPLE Procedures

    gps transmitter circuit diagram

    Abstract: No abstract text available
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA LAST SHIP 31JAN05 MRF186 RF Power Field-Effect Transistor N–Channel Enhancement–Mode Lateral MOSFET LIFETIME BUY Designed for broadband commercial and industrial applications at frequencies from 800 MHz to 1.0 GHz. The high gain and broadband performance of this


    Original     		PDF 37nces MRF186) MRF186 31JUL04 31JAN05 MRF186 gps transmitter circuit diagram

    226 35K

    Abstract: 226 35K capacitor capacitor 226 35K electrolytic capacitor 226 35k 226 35K 649 226 35K 750 gps-500 105 35K capacitor R 226 35k
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Sub–Micron MOSFET Line RF Power Field Effect Transistor MRF21120 N–Channel Enhancement–Mode Lateral MOSFET Designed for W–CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier


    Original     		PDF MRF21120 226 35K 226 35K capacitor capacitor 226 35K electrolytic capacitor 226 35k 226 35K 649 226 35K 750 gps-500 105 35K capacitor R 226 35k

    rd70huf2

    Abstract: RD70 HUF2 RD70HUF w18 transistor MITSUBISHI RF POWER MOS FET rd70 2x500mA AN-VHF-049
    Text: < Silicon RF Power Semiconductors > RD70HUF2 RoHS Compliance, Silicon MOSFET Power Transistor, 175MHz, 530MHz, 70W 24.60 18.00 DESCRIPTION a' RD70 Lot HUF2 No-G ○ 6 9 a 7 8 3.63 3.10 3.61 2.40 3 4 2 1 RD70HUF2 13.50 ○ 8 Lot No-G 7 ○ 6 5 APPLICATION For output stage of high power amplifiers in VHF/UHF


    Original     		PDF RD70HUF2 175MHz, 530MHz, RD70HUF2 75Wtyp, 530MHz 84Wtyp, 175MHz RD70 HUF2 RD70HUF w18 transistor MITSUBISHI RF POWER MOS FET rd70 2x500mA AN-VHF-049

    rd70huf2

    Abstract: RD70 HUF2 MITSUBISHI RF POWER MOS FET rd70 Mitsubishi Plastics RD70HUF transistor c33
    Text: < Silicon RF Power MOS FET Discrete > RD70HUF2 RoHS Compliance, Silicon MOSFET Power Transistor, 175MHz, 530MHz, 70W 24.60 18.00 DESCRIPTION a' RD70 Lot HUF2 No-G ○ 6 9 a 7 8 3.63 3.10 4 3.61 2.40 3 2 1 RD70HUF2 13.50 ○ 8 Lot No-G 7 ○ 6 5 APPLICATION


    Original     		PDF RD70HUF2 175MHz, 530MHz, RD70HUF2 75Wtyp, 530MHz 84Wtyp, 175MHz Oct2011 RD70 HUF2 MITSUBISHI RF POWER MOS FET rd70 Mitsubishi Plastics RD70HUF transistor c33

    RD70 HUF2

    Abstract: W105 TRANSISTOR ML1 RD70HUF2
    Text: < Silicon RF Power MOS FET Discrete > RD70HUF2 RoHS Compliance, Silicon MOSFET Power Transistor, 175MHz, 530MHz, 70W 24.60 18.00 DESCRIPTION a' 0.60 2 FEATURES 3 RD70 Lot HUF2 No-G 6 9 a 4 3.61 2.40 3 2 1 6 5 RD70HUF2 13.50 Lot No-G 8 7 APPLICATION For output stage of high power amplifiers in VHF/UHF


    Original     		PDF RD70HUF2 175MHz, 530MHz, RD70HUF2 RD70 HUF2 W105 TRANSISTOR ML1

    4835 mosfet

    Abstract: 190NC
    Text: Advanced Data High Voltage IGBT IXPN35N100A vC ES ^C25 and MOSFET Switch vCE SAT Short Circuit SOA Capability Sym bol -o GM Q. Gl O- C/D af E/S -o Test C onditions Maxim um Ratings miniBLOC, SOT-227 B E153432 IGBT MOSFET 1000 1000 1000 1000 V v v*C G R T j = 25°C to 150°C


    OCR Scan     		PDF IXPN35N100A OT-227 E153432 4835 mosfet 190NC