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    MOSFET APPLICATION NOTE Search Results

    MOSFET APPLICATION NOTE Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    MG800FXF1JMS3 Toshiba Electronic Devices & Storage Corporation N-ch SiC MOSFET Module, 3300 V, 800 A, iXPLV, High-side: SiC SBD、Low-side: SiC MOSFET Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation
    XPJ1R004PB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 40 V, 160 A, 0.001 Ω@10V, S-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK4K1A60F Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 600 V, 2.0 A, 4.1 Ohm@10V, TO-220SIS Visit Toshiba Electronic Devices & Storage Corporation

    MOSFET APPLICATION NOTE Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    4422 mosfet

    Abstract: MOSFET 4420 Matching MOSFET Drivers to MOSFETs parallel mosfet 4469 mosfet use of zener diode 4420 mosfet mosfet 4468 4422 dual mosfet irf4501
    Text: APPLICATION NOTE 30 MATCHING MOSFET DRIVERS TO MOSFETs MATCHING MOSFET DRIVERS TO MOSFETs AN-30 INTRODUCTION V TelCom offers many sizes of MOSFET drivers. This allows the designer to best match the switching performance of the driver/MOSFET to the application.


    Original     		PDF AN-30 TC4424 4422 mosfet MOSFET 4420 Matching MOSFET Drivers to MOSFETs parallel mosfet 4469 mosfet use of zener diode 4420 mosfet mosfet 4468 4422 dual mosfet irf4501

    IEC60747-8

    Abstract: AN11158 nxp mosfet soa derating AN10273 iec60134
    Text: AN11158 Understanding power MOSFET data sheet parameters Rev. 2 — 16 August 2012 Application note Document information Info Content Keywords MOSFET. Abstract This application note describes the content of power MOSFET data sheet parameters AN11158 NXP Semiconductors


    Original     		PDF AN11158 AN11158 IEC60747-8 nxp mosfet soa derating AN10273 iec60134

    Untitled

    Abstract: No abstract text available
    Text: AN11158 Understanding power MOSFET data sheet parameters Rev. 4 — 4 February 2014 Application note Document information Info Content Keywords MOSFET. Abstract This application note describes the content of power MOSFET data sheet parameters AN11158 NXP Semiconductors


    Original     		PDF AN11158

    Untitled

    Abstract: No abstract text available
    Text: AN11158 Understanding power MOSFET data sheet parameters Rev. 3 — 7 January 2013 Application note Document information Info Content Keywords MOSFET. Abstract This application note describes the content of power MOSFET data sheet parameters AN11158 NXP Semiconductors


    Original     		PDF AN11158 AN11158

    mosfet 5kw high power rf

    Abstract: 13.56Mhz class e power amplifier 13.56MHZ 3KW GENERATOR 2kw mosfet SCHEMATIC 5kw power supply 30A 12v to 220v step up transformer circuit diagram of 13.56MHz RF Generator 13.56Mhz rf amplifier module DRF1300 Class E power amplifier, 13.56MHz
    Text: Application Note 13.56 MHz, Class D Push-Pull, 2KW RF Generator with Microsemi DRF1300 Power MOSFET Hybrid Dec. 30 2008 By Gui Choi Sr. RF Application Engineer The DRF1300/CLASS-D Reference design is available to expedite the evaluation of the DRF1300 push-pull MOSFET hybrid. This application note or


    Original     		PDF DRF1300 DRF1300/CLASS-D 56MHz mosfet 5kw high power rf 13.56Mhz class e power amplifier 13.56MHZ 3KW GENERATOR 2kw mosfet SCHEMATIC 5kw power supply 30A 12v to 220v step up transformer circuit diagram of 13.56MHz RF Generator 13.56Mhz rf amplifier module Class E power amplifier, 13.56MHz

    circuit diagram of 13.56MHz RF Generator

    Abstract: 800w class d circuit diagram schematics 1kw mosfet 13.56MHZ mosfet schematic rf Power supply 500w schematic rf Power supply 500w 13.56MHz high power pulse generator with mosfet PRF-1150 DRF1200 schematic diagram Power supply 500w
    Text: Application Note 13.56 MHz, CLASS-E, 1KW RF Generator using a Microsemi DRF1200 Driver/MOSFET Hybrid Dec. 22. 2008 By Gui Choi Sr. Application Engineer The DRF1200/Class-E Reference design is available to expedite the evaluation of the DRF1200 Driver MOSFET hybrid. This Application Note or Reference Design Kit


    Original     		PDF DRF1200 DRF1200/Class-E 65mil 56MHz PRF-1150 circuit diagram of 13.56MHz RF Generator 800w class d circuit diagram schematics 1kw mosfet 13.56MHZ mosfet schematic rf Power supply 500w schematic rf Power supply 500w 13.56MHz high power pulse generator with mosfet schematic diagram Power supply 500w

    88-108 rf amplifier

    Abstract: 88-108 mhz Power amplifier w RTL 602 an power 88-108 mhz AN1229 neosid RTL 602 W AN-1229 neosid* 10k SD2932
    Text: AN1229 Application note SD2932 RF MOSFET for 300 W FM amplifier Introduction This application note gives a description of a broadband power amplifier operating over the frequency range 88 - 108 MHz using the new STMicroelectronics RF MOSFET transistor SD2932.


    Original     		PDF AN1229 SD2932 SD2932. SD2932 88-108 rf amplifier 88-108 mhz Power amplifier w RTL 602 an power 88-108 mhz AN1229 neosid RTL 602 W AN-1229 neosid* 10k

    CV2f

    Abstract: AN1108
    Text: Applying Power MOSFET Drivers Application Note September 16, 2003 AN1108 Author: Bruce Rosenthal The EL7xxx series of high speed power MOSFET drivers achieve noteworthy improvements in speed, efficiency, input impedance, and functionality thru the application of advanced CMOS technology and novel circuit


    Original     		PDF AN1108 200ns. CV2f AN1108

    FQA9N90C equivalent

    Abstract: Rudy Severns "Safe Operating Area and Thermal Design" mospower applications handbook 2kw mosfet FQA11N90C Severns power mosfet 7515 siliconix mosfet discontinued AN-7514
    Text: March, 2004 Application Note 9034 Power MOSFET Avalanche Guideline Sungmo Young, Application Engineer Introduction The Power MOSFET is a very popular switching device used in switching power supplies and DC-DC converters. Their operation frequency is being continuously increased to reduce size


    Original     		PDF

    MAX1614

    Abstract: protection against interest current APP3472 2.2K resistor 17-uA an3472
    Text: Maxim > App Notes > CIRCUIT PROTECTION Keywords: series protection, power switch, power MOSFET, transient protection Mar 23, 2005 APPLICATION NOTE 3472 Series Protection for Power-Line Transients Abstract: This application note describes a circuit that protects an n-channel power MOSFET against low and


    Original     		PDF com/an3472 MAX1614: AN3472, APP3472, Appnote3472, MAX1614 protection against interest current APP3472 2.2K resistor 17-uA an3472

    irf510 switch

    Abstract: irf840 mosfet drive circuit diagram MOSFET IRF740 as switch irf520 switch IRFZ44 mosfet IRFZ44 IRF540 IRF510 application note gate drive for mosfet irfz44 power MOSFET IRF740 driver circuit
    Text: Application Note 24 Micrel Application Note 24 Designing with Low-Side MOSFET Drivers by John McGinty hanced . Subsequently, the gate-to-drain capacitance requires more current due to the changing drain voltage, which steals from the available gate-drive current of the MOSFET


    Original     		PDF

    neosid* 10k

    Abstract: neosid* 5.6k 300w fm amplifier VK200 INDUCTOR inductor vk200 88-108 rf amplifier 300w amplifier balun transformer report balun 50 ohm 100 ohm AN rf 88-108mhz
    Text: AN1229 APPLICATION NOTE SD2932 RF MOSFET FOR 300W FM AMPLIFIER Serge Juhel 1. ABSTRACT This application note gives a description of a broadband power amplifier operating over the frequency range 88 - 108 MHz and using the new STMicroelectronics RF MOSFET transistor SD2932.


    Original     		PDF AN1229 SD2932 SD2932. SD2932 neosid* 10k neosid* 5.6k 300w fm amplifier VK200 INDUCTOR inductor vk200 88-108 rf amplifier 300w amplifier balun transformer report balun 50 ohm 100 ohm AN rf 88-108mhz

    inductor vk200

    Abstract: RTL 602 W 300w fm amplifier neosid* 10k VK200 INDUCTOR VK200 inductor of high frequencies neosid "RF MOSFET" 300W 300 ohms balun 300w amplifier
    Text: AN1229 APPLICATION NOTE SD2932 RF MOSFET FOR 300W FM AMPLIFIER Serge Juhel 1. ABSTRACT This application note gives a description of a broadband power amplifier operating over the frequency range 88 - 108 MHz and using the new STMicroelectronics RF MOSFET transistor SD2932.


    Original     		PDF AN1229 SD2932 SD2932. SD2932 inductor vk200 RTL 602 W 300w fm amplifier neosid* 10k VK200 INDUCTOR VK200 inductor of high frequencies neosid "RF MOSFET" 300W 300 ohms balun 300w amplifier

    FULLY PROTECTED MOSFET

    Abstract: mosfet driver in battery applications MAX1614 diode reverse voltage protection 6v battery APP2012 10mor power-switch protection mosfet
    Text: Maxim > App Notes > BATTERY MANAGEMENT POWER-SUPPLY CIRCUITS Keywords: MOSFET driver, reverse battery protection, mosfet, reverse battery protected, power switch drivers, diode protection May 11, 2003 APPLICATION NOTE 2012 MOSFET Driver Is Reverse-Battery Protected


    Original     		PDF com/an2012 MAX1614: AN2012, APP2012, Appnote2012, FULLY PROTECTED MOSFET mosfet driver in battery applications MAX1614 diode reverse voltage protection 6v battery APP2012 10mor power-switch protection mosfet

    400w class d schematic

    Abstract: 27.12Mhz
    Text: Application Note 1813 27.12 MHz, CLASS-E, 400W RF Generator using a Microsemi DRF1200 Driver/MOSFET Hybrid Overview The DRF1200/Class-E 27M Reference design is available to expedite the evaluation of the DRF1200 Driver MOSFET hybrid. This Application Note or Reference Design Kit does not


    Original     		PDF DRF1200 DRF1200/Class-E DRF1200 1813-B/04 400w class d schematic 27.12Mhz

    G60N

    Abstract: SS31 DIODE DS22062 pspice model TC4423A Tc4421 spice model TC1412 Latch-Up Protection for MOSFET Drivers 439M AN1327 TC1411
    Text: AN1327 Avoiding MOSFET Driver Overstress Author: Ray DiSilvestro Microchip Technology Inc. INTRODUCTION This application note describes how to avoid MOSFET driver overstress. MOSFET drivers are used in many applications to drive the high input capacitance of a


    Original     		PDF AN1327 dri18 DS01327A-page G60N SS31 DIODE DS22062 pspice model TC4423A Tc4421 spice model TC1412 Latch-Up Protection for MOSFET Drivers 439M AN1327 TC1411

    cmca v2.1

    Abstract: S/cmca v2.1
    Text: Application Note 1811 October 2013 13.56 MHz, CLASS-E, 1KW RF Generator using a Microsemi DRF1200 Driver/MOSFET Hybrid Gui Choi Sr. Application Engineer Phone: 541-382-8028, ext. 1205 gchoi@microsemi.com The DRF1200/Class-E Reference design is available to expedite the evaluation of the DRF1200 Driver MOSFET


    Original     		PDF DRF1200 DRF1200/Class-E 65mil PRF-1150 56MHz cmca v2.1 S/cmca v2.1

    circuit diagram of 13.56MHz RF Generator

    Abstract: schematic rf Power supply 500w PRF-1150 schematic rf Power supply 500w 13.56MHz DRF1200 1kw mosfet GRM21BR71H474KA88L 13.56MHZ mosfet zener diode c24 5t RF inductor 13.56 MHz
    Text: Application Note 1811 December 2008 13.56 MHz, CLASS-E, 1KW RF Generator using a Microsemi DRF1200 Driver/MOSFET Hybrid Gui Choi Sr. Application Engineer Phone: 541-382-8028, ext. 1205 gchoi@microsemi.com The DRF1200/Class-E Reference design is available to expedite the evaluation of the DRF1200 Driver MOSFET


    Original     		PDF DRF1200 DRF1200/Class-E an6-13131-1-ND DRF1200 140-XRL16V10-RC GRM21BR71H474KA88L 140-XRL35V10-RC circuit diagram of 13.56MHz RF Generator schematic rf Power supply 500w PRF-1150 schematic rf Power supply 500w 13.56MHz 1kw mosfet GRM21BR71H474KA88L 13.56MHZ mosfet zener diode c24 5t RF inductor 13.56 MHz

    IXDD 614

    Abstract: BJT de potencia zener diode 1N PH 48 CHN 841 lm339 igbt driver ups transformer winding formula mosfet igbt drivers theory MOSFET IGBT DRIVERS THEORY AND APPLICATIONS chn 614 diod MOSFET IGBT THEORY AND APPLICATIONS
    Text: APPLICATION NOTE AN0002 MOSFET/IGBT DRIVERS THEORY AND APPLICATIONS By Abhijit D. Pathak 1. Introduction 1.1. MOSFET and IGBT Technology. 1.2. MOSFET Models and critical parameters 1.3. Turn-on and Turn-off phenomenon and their explanations 1.4. Power losses in Drivers


    Original     		PDF AN0002 RH159NB D-68623; IXDD 614 BJT de potencia zener diode 1N PH 48 CHN 841 lm339 igbt driver ups transformer winding formula mosfet igbt drivers theory MOSFET IGBT DRIVERS THEORY AND APPLICATIONS chn 614 diod MOSFET IGBT THEORY AND APPLICATIONS

    VN0106N9

    Abstract: VN0109N5 VN0106N5 VN0106N2 VN0104N5 VN0104N2 N-CHANNEL ENHANCEMENT MODE POWER MOSFET 8A 60V N-Channel Depletion-Mode MOSFET high voltage VN0106N6 VN0106
    Text: Understanding MOSFET Data DMOS Application Note AN-D15 Understanding MOSFET Data The following outline explains how to read and use Supertex MOSFET data sheets. The approach is simple and care has been taken to avoid getting lost in a maze of technical jargon.


    Original     		PDF AN-D15 VN0104/VN0106/VN0109 VN0104 VN0106 VN0109 VN0106N9 VN0109N5 VN0106N5 VN0106N2 VN0104N5 VN0104N2 N-CHANNEL ENHANCEMENT MODE POWER MOSFET 8A 60V N-Channel Depletion-Mode MOSFET high voltage VN0106N6 VN0106

    ICL7667

    Abstract: driver circuit for MOSFET ICL7667 HV400 mosfet triggering circuit scr gate driver ic High power diode 5000V HV Flyback schematic PUSH PULL MOSFET DRIVER SCR TRIGGER PULSE TRANSFORMER DB304
    Text: No. AN9301 Application Note April 1994 HIGH CURRENT LOGIC LEVEL MOSFET DRIVER Author: John Prentice Introduction Although the HV400 was designed as an interface between a pulse transformer and a power MOSFET, there are applications for high current MOSFET gate drive controlled


    Original     		PDF AN9301 HV400 HV400. DB304. ICL7667 driver circuit for MOSFET ICL7667 mosfet triggering circuit scr gate driver ic High power diode 5000V HV Flyback schematic PUSH PULL MOSFET DRIVER SCR TRIGGER PULSE TRANSFORMER DB304

    jfet cascode

    Abstract: mosfet equivalent AN-7502 mos cascode AN72 RFM15N15 high transconductance JFET Fairchild presentation
    Text: Power MOSFET Switching Waveforms: A New Insight Application Note [ /Title AN72 60 /Subject (Power MOSFET Switch ing Waveforms: A New Insight ) /Autho r () /Keywords (Intersil Corporation, semiconductor) /Creator () /DOCI NFO pdfmark [ /PageMode /UseOutlines


    Original     		PDF

    Inverter IRF1404

    Abstract: IRF1404 FET IRF1404 static characteristics of mosfet amp mosfet schematic circuit MOSFET dynamic parameters 3 phase mosfet drive schematic AN1040 bach AN-1040
    Text: Application Note AN-1040 System Simulation Using Power MOSFET QuasiDynamic Model Table of Contents Page Objective: To examine the Quasi-Dynamic model of power MOSFET and its effects on device thermal response . 1


    Original     		PDF AN-1040 Assure2000 Inverter IRF1404 IRF1404 FET IRF1404 static characteristics of mosfet amp mosfet schematic circuit MOSFET dynamic parameters 3 phase mosfet drive schematic AN1040 bach AN-1040

    10mjA

    Abstract: D2Pak Package dimensions
    Text: FDP2670/FDB2670 200V N-Channel PowerTrench MOSFET General Description Features This N-Channel MOSFET has been designed specifically for switching on the primary side in the isolated DC/DC converter application. Any application requiring a 200V MOSFETs with low on-resistance and


    Original     		PDF FDP2670/FDB2670 10mjA D2Pak Package dimensions