international rectifier
Abstract: IRFM260 4.5v to 100v input regulator
Text: PD - 91388C POWER MOSFET THRU-HOLE TO-254AA IRFM260 200V, N-CHANNEL HEXFET MOSFET TECHNOLOGY Product Summary Part Number RDS(on) ID IRFM260 0.060 Ω 35A* HEXFET® MOSFET technology is the key to International Rectifier’s advanced line of power MOSFET transistors.
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91388C
O-254AA)
IRFM260
O-254AA.
MIL-PRF-19500
international rectifier
IRFM260
4.5v to 100v input regulator
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Untitled
Abstract: No abstract text available
Text: PD - 91388C POWER MOSFET THRU-HOLE TO-254AA IRFM260 200V, N-CHANNEL HEXFET MOSFET TECHNOLOGY Product Summary Part Number RDS(on) ID IRFM260 0.060 Ω 35A* HEXFET® MOSFET technology is the key to International Rectifier’s advanced line of power MOSFET transistors.
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91388C
O-254AA)
IRFM260
O-254AA.
MIL-PRF-19500
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IRF*260
Abstract: IRFM260 4.5V TO 100V INPUT REGULATOR
Text: PD - 91388B POWER MOSFET THRU-HOLE TO-254AA IRFM260 200V, N-CHANNEL HEXFET MOSFET TECHNOLOGY Product Summary Part Number RDS(on) ID IRFM260 0.060 Ω 35A* HEXFET® MOSFET technology is the key to International Rectifier’s advanced line of power MOSFET transistors. The
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91388B
O-254AA)
IRFM260
O-254AA.
MIL-PRF-19500
IRF*260
IRFM260
4.5V TO 100V INPUT REGULATOR
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irf 44 n
Abstract: IRF7413
Text: PD - 91330D IRF7413 PROVISIONAL HEXFET Power MOSFET Advanced Power MOSFET Technology Ultra Low On-Resistance l N-Channel Mosfet l Surface Mount l Available in Tape & Reel l Dynamic dv/dt Rating l Fast Switching Description l l A A D 1 8 S 2 7 D S 3 6 D G
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91330D
IRF7413
characteristi310)
irf 44 n
IRF7413
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IRf 48 MOSFET
Abstract: N CHANNEL 250A SINGLE PHASE POWER MOSFET 9936 mosfet P 838 X MOSFET DATA SHEET MOSFET SO-8 IRF7413 power mosfet so8 FL 91330
Text: PD - 91330E IRF7413 HEXFET Power MOSFET Advanced Power MOSFET Technology Ultra Low On-Resistance l N-Channel Mosfet l Surface Mount l Available in Tape & Reel l Dynamic dv/dt Rating l Fast Switching Description l l A A D 1 8 S 2 7 D S 3 6 D G 4 5 D S VDSS = 30V
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91330E
IRF7413
multiple-310)
IRf 48 MOSFET
N CHANNEL 250A SINGLE PHASE POWER MOSFET
9936 mosfet
P 838 X MOSFET DATA SHEET
MOSFET SO-8
IRF7413
power mosfet so8 FL
91330
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AN799 Matching MOSFET Drivers to MOSFETs
Abstract: an799 an799 microchip IRF450A TC4424 motor driver Matching MOSFET Drivers to MOSFETs TC4431 application TC4420 die MOSFET TEST SIMPLE Procedures TC4424
Text: AN799 Matching MOSFET Drivers to MOSFETs INTRODUCTION V+ Microchip offers many sizes of MOSFET drivers. This allows the designer to best match the switching performance of the driver/ MOSFET to the application. TC4424 MOSFET DIE SIZES Unlike bipolar transistors in which die size is primarily a function of
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AN799
TC4424
D-81739
DS00799A*
DS00799A-page
AN799 Matching MOSFET Drivers to MOSFETs
an799
an799 microchip
IRF450A
TC4424 motor driver
Matching MOSFET Drivers to MOSFETs
TC4431 application
TC4420 die
MOSFET TEST SIMPLE Procedures
TC4424
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24V 10A SMPS
Abstract: AN1001 EIA-541 F7101 IRF7101 IRF7413 SMPS 24V
Text: PD- 91330F IRF7413 SMPS MOSFET HEXFET Power MOSFET Applications l High frequency DC-DC converters Benefits l Low Gate to Drain Charge to Reduce Switching Losses l Fully Characterized Capacitance Including Effective COSS to Simplify Design, See App. Note AN1001
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91330F
IRF7413
AN1001)
24V 10A SMPS
AN1001
EIA-541
F7101
IRF7101
IRF7413
SMPS 24V
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IXDD 614
Abstract: BJT de potencia zener diode 1N PH 48 CHN 841 lm339 igbt driver ups transformer winding formula mosfet igbt drivers theory MOSFET IGBT DRIVERS THEORY AND APPLICATIONS chn 614 diod MOSFET IGBT THEORY AND APPLICATIONS
Text: APPLICATION NOTE AN0002 MOSFET/IGBT DRIVERS THEORY AND APPLICATIONS By Abhijit D. Pathak 1. Introduction 1.1. MOSFET and IGBT Technology. 1.2. MOSFET Models and critical parameters 1.3. Turn-on and Turn-off phenomenon and their explanations 1.4. Power losses in Drivers
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AN0002
RH159NB
D-68623;
IXDD 614
BJT de potencia
zener diode 1N PH 48
CHN 841
lm339 igbt driver
ups transformer winding formula
mosfet igbt drivers theory
MOSFET IGBT DRIVERS THEORY AND APPLICATIONS
chn 614 diod
MOSFET IGBT THEORY AND APPLICATIONS
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AN1001
Abstract: EIA-541 F7101 IRF7101 IRF7413
Text: PD- 91330G IRF7413 SMPS MOSFET HEXFET Power MOSFET Applications l High frequency DC-DC converters Benefits l Low Gate to Drain Charge to Reduce Switching Losses l Fully Characterized Capacitance Including Effective COSS to Simplify Design, See App. Note AN1001
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91330G
IRF7413
AN1001)
AN1001
EIA-541
F7101
IRF7101
IRF7413
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SMD 51A
Abstract: IRHNA3160 IRHNA4160 IRHNA7160 IRHNA8160 JANSR2N7432U
Text: PD - 91396C IRHNA7160 100V, N-CHANNEL RADIATION HARDENED POWER MOSFET SURFACE MOUNT SMD-2 REF: MIL-PRF-19500/664 RAD-Hard HEXFET MOSFET TECHNOLOGY Product Summary Part Number Radiation Level IRHNA7160 100K Rads (Si) IRHNA3160 300K Rads (Si) RDS(on)
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91396C
IRHNA7160
MIL-PRF-19500/664
IRHNA7160
IRHNA3160
JANSR2N7432U
JANSF2N7432U
IRHNA4160
JANSG2N7432U
JANSH2N7432U
SMD 51A
IRHNA4160
IRHNA8160
JANSR2N7432U
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Matching MOSFET Drivers to MOSFETs
Abstract: POWER MOSFET 4600 TC4422 AN799 Matching MOSFET Drivers to MOSFETs fet 4816 multiple mosfet gate driver Dual Gate MOSFET graphs an799 mosfet cross reference MOSFET A3
Text: AN799 Matching MOSFET Drivers to MOSFETs Author: Jamie Dunn Microchip Technology Inc. 2. Power dissipation due to quiescent current draw of the MOSFET driver. EQUATION 2: INTRODUCTION There are many MOSFET technologies and silicon processes in existence today, with new advances being
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AN799
r4-7200
D-85737
NL-5152
DS00799B-page
Matching MOSFET Drivers to MOSFETs
POWER MOSFET 4600
TC4422
AN799 Matching MOSFET Drivers to MOSFETs
fet 4816
multiple mosfet gate driver
Dual Gate MOSFET graphs
an799
mosfet cross reference
MOSFET A3
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smd 43a
Abstract: IRHNA3260 IRHNA4260 IRHNA7260 IRHNA8260 JANSR2N7433U
Text: PD - 91397B IRHNA7260 200V, N-CHANNEL RADIATION HARDENED POWER MOSFET SURFACE MOUNT SMD-2 REF: MIL-PRF-19500/664 RAD-Hard HEXFET MOSFET TECHNOLOGY Product Summary Part Number Radiation Level IRHNA7260 100K Rads (Si) IRHNA3260 300K Rads (Si) RDS(on)
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91397B
IRHNA7260
MIL-PRF-19500/664
IRHNA7260
IRHNA3260
JANSR2N7433U
JANSF2N7433U
IRHNA4260
JANSG2N7433U
JANSH2N7433U
smd 43a
IRHNA4260
IRHNA8260
JANSR2N7433U
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SCH2815
Abstract: 9130
Text: SCH2815 Ordering number : ENA0369 SANYO Semiconductors DATA SHEET SCH2815 MOSFET : N-Channel Silicon MOSFET SBD : Schottky Barrier Diode General-Purpose Switching Device Applications Features • • • Composite type with an N-channel silicon MOSFET and a Schottky barrier diode contained in one package
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SCH2815
ENA0369
A0369-6/6
SCH2815
9130
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IRHN7450SE
Abstract: No abstract text available
Text: PD - 91313C IRHN7450SE 500V, N-CHANNEL RADIATION HARDENED POWER MOSFET SURFACE MOUNT SMD-1 RAD Hard HEXFET TECHNOLOGY Product Summary Part Number IRHN7450SE Radiation Level RDS(on) 100K Rads (Si) 0.51Ω ID 12A SMD-1 International Rectifiers RADHardTM HEXFET® MOSFET
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91313C
IRHN7450SE
MIL-STD-750,
MlL-STD-750,
IRHN7450SE
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IRH7450SE
Abstract: No abstract text available
Text: PD - 91390B RADIATION HARDENED POWER MOSFET THRU-HOLE TO-204AA/AE IRH7450SE 500V, N-CHANNEL RAD Hard HEXFET TECHNOLOGY Product Summary Part Number IRH7450SE Radiation Level 100K Rads (Si) RDS(on) 0.51Ω ID 12A International Rectifier’s RADHardTM HEXFET® MOSFET
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91390B
O-204AA/AE)
IRH7450SE
MIL-STD-750,
MlL-STD-750,
--TO-204AE
IRH7450SE
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IRHNA7460SE
Abstract: HEXFET Power MOSFET SMD2
Text: PD - 91399B RADIATION HARDENED POWER MOSFET SURFACE MOUNT SMD-2 IRHNA7460SE 500V, N-CHANNEL RAD Hard HEXFET TECHNOLOGY Product Summary Part Number IRHNA7460SE Radiation Level RDS(on) 100K Rads (Si) 0.32Ω ID 20A SMD-2 International Rectifier’s RADHardTM HEXFET® MOSFET
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91399B
IRHNA7460SE
MIL-STD-750,
MlL-STD-750,
IRHNA7460SE
HEXFET Power MOSFET SMD2
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IRHNA7360SE
Abstract: No abstract text available
Text: PD-91398B RADIATION HARDENED POWER MOSFET SURFACE MOUNT SMD-2 IRHNA7360SE 400V, N-CHANNEL RAD Hard HEXFET TECHNOLOGY Product Summary Part Number IRHNA7360SE Radiation Level RDS(on) 100K Rads (Si) 0.20Ω ID 24A SMD-2 International Rectifier’s RADHardTM HEXFET® MOSFET
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PD-91398B
IRHNA7360SE
12volt
MIL-STD-750,
320volt
MlL-STD-750,
IRHNA7360SE
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IRHNA7460SE
Abstract: No abstract text available
Text: PD - 91399A IRHNA7460SE 500V, N-CHANNEL RADIATION HARDENED POWER MOSFET SURFACE MOUNT SMD-2 RAD Hard HEXFET TECHNOLOGY Product Summary Part Number IRHNA7460SE Radiation Level RDS(on) 100K Rads (Si) 0.32Ω ID 20A SMD-2 International Rectifiers RADHardTM HEXFET® MOSFET
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1399A
IRHNA7460SE
MIL-STD-750,
MlL-STD-750,
IRHNA7460SE
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Untitled
Abstract: No abstract text available
Text: PD - 91390B RADIATION HARDENED POWER MOSFET THRU-HOLE TO-204AA/AE IRH7450SE 500V, N-CHANNEL RAD Hard HEXFET TECHNOLOGY Product Summary Part Number IRH7450SE Radiation Level 100K Rads (Si) RDS(on) 0.51Ω ID 12A International Rectifier’s RADHardTM HEXFET® MOSFET
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91390B
O-204AA/AE)
IRH7450SE
MIL-STD-750,
MlL-STD-750,
O-204AE
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Untitled
Abstract: No abstract text available
Text: PD - 91399B RADIATION HARDENED POWER MOSFET SURFACE MOUNT SMD-2 IRHNA7460SE 500V, N-CHANNEL RAD Hard HEXFET TECHNOLOGY Product Summary Part Number IRHNA7460SE Radiation Level RDS(on) 100K Rads (Si) 0.32Ω ID 20A SMD-2 International Rectifier’s RADHardTM HEXFET® MOSFET
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91399B
IRHNA7460SE
MIL-STD-750,
MlL-STD-750,
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Untitled
Abstract: No abstract text available
Text: PD - 91313C IRHN7450SE 500V, N-CHANNEL RADIATION HARDENED POWER MOSFET SURFACE MOUNT SMD-1 RAD Hard HEXFET TECHNOLOGY Product Summary Part Number IRHN7450SE Radiation Level RDS(on) 100K Rads (Si) 0.51Ω ID 12A SMD-1 International Rectifiers RADHardTM HEXFET® MOSFET
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91313C
IRHN7450SE
MIL-STD-750,
MlL-STD-750,
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Untitled
Abstract: No abstract text available
Text: PD-91398B RADIATION HARDENED POWER MOSFET SURFACE MOUNT SMD-2 IRHNA7360SE 400V, N-CHANNEL RAD Hard HEXFET TECHNOLOGY Product Summary Part Number IRHNA7360SE Radiation Level RDS(on) 100K Rads (Si) 0.20Ω ID 24A SMD-2 International Rectifier’s RADHardTM HEXFET® MOSFET
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PD-91398B
IRHNA7360SE
12volt
MIL-STD-750,
320volt
MlL-STD-750,
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Untitled
Abstract: No abstract text available
Text: PD - 96107A IRF7314QPbF HEXFET Power MOSFET Benefits • Advanced Process Technology • ÿDual P-Channel MOSFET • ÿUltra Low On-Resistance • ÿ175°C Operating Temperature • ÿRepetitive Avalanche Allowed up to Tjmax • ÿLead-Free Description These HEXFET ® Power MOSFET’s in a Dual SO-8
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6107A
IRF7314QPbF
reliable461
EIA-481
EIA-541.
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sc1142
Abstract: sanyo a75 amplifier IR7811 a106 diode SC1142CSW surface mount A106 diode B85 diode A107 capacitor B91 02 diode A116 diode
Text: HIGH SPEED SYNCHRONOUS POWER MOSFET SMART DRIVER December 16, 1999 TEL:805-498-2111 FAX:805-498-3804 WEB:http://www.semtech.com DESCRIPTION The SC1405B is a Dual-MOSFET Driver with an internal Overlap Protection Circuit to prevent shoot-through from VIN to GND in the main switching and synchronous MOSFET’s. Each driver is capable of driving
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SC1405B
SC1405B
3000pF
IR7811
FDB7030
TSSOP-14
ECN99-773
sc1142
sanyo a75 amplifier
a106 diode
SC1142CSW
surface mount A106 diode
B85 diode
A107 capacitor
B91 02 diode
A116 diode
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