MOSFET 840 DATASHEET Search Results

Contextual Info: STE60N105DK5 N-channel 1050 V, 0.1 Ω typ., 44 A Zener protected SuperMESH 5 Power MOSFET in a ISOTOP package Datasheet — preliminary data Features Oreder code VDSS STE60N105DK5 1050 V RDS on max ID PTOT 0.120 Ω 44 A 625 W • Worldwide best RDS(on)*area

Contextual Info: STY50N105DK5 N-channel 1050 V, 0.1 Ω typ., 44 A Zener-protected SuperMESH 5 Power MOSFET in a Max247 package Datasheet — preliminary data Features Order code VDS STY50N105DK5 1050 V RDS on max ID PTOT 0.120 Ω 44 A 625 W • Worldwide best RDS(on)*area

Contextual Info: L6566BH Multimode controller for SMPS Datasheet — production data Features • Selectable multimode operation: fixed frequency or quasi-resonant ■ On-board 840 V high voltage startup ■ Advanced light load management ■ Low quiescent current < 3 mA

L6566BH

Abstract: 28 VOLT 35 AMP smps schematic diagram 2 sc 1020 12 VOLT 100 AMP smps L6566B SMPS SCHEMATIC DIAGRAM 24 v 10 a
Contextual Info: L6566BH Multimode controller for SMPS Datasheet — production data Features • Selectable multimode operation: fixed frequency or quasi-resonant ■ On-board 840 V high voltage startup ■ Advanced light load management ■ Low quiescent current < 3 mA

Contextual Info: SuperFET II FCP600N60Z / FCPF600N60Z 600V N-Channel MOSFET Description Features ® SuperFET II is, Fairchild’s proprietary, new generation of high voltage MOSFET family that is utilizing an advanced charge balance mechanism for outstanding low on-resistance and lower

Contextual Info: SuperFET II FCP600N60Z / FCPF600N60Z 600V N-Channel MOSFET Description Features ® SuperFET II is, Fairchild’s proprietary, new generation of high voltage MOSFET family that is utilizing an advanced charge balance mechanism for outstanding low on-resistance and lower

FCD600N60Z

Contextual Info: FCD600N60Z N-Channel SuperFET II MOSFET 600 V, 7.4 A, 600 mΩ Features Description ® ® SuperFET II MOSFET is Fairchild Semiconductor ’s first generation of high voltage super-junction SJ MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance.This advanced technology is tailored to minimize conduction loss, provide superior

FCD600N60Z

Contextual Info: SuperFET II FCD600N60Z 600V N-Channel MOSFET Features Description • 650V @TJ = 150°C SuperFET®II is, Farichild’s proprietary, new generation of high voltage MOSFET family that is utilizing an advanced charge balance mechanism for outstanding low on-resistance and lower

Contextual Info: FDH210N08 N-Channel UniFETTM MOSFET 75 V, 210 A, 5.5 mΩ Features Description UniFETTM MOSFET is Fairchild Semiconductor’s high voltage MOSFET family based on planar stripe and DMOS technology. This MOSFET is tailored to reduce on-state resistance, and to

FCD600N60Z

Contextual Info: SuperFET II FCD600N60Z 600V N-Channel MOSFET Features Description • 650V @TJ = 150°C SuperFET®II is, Farichild’s proprietary, new generation of high voltage MOSFET family that is utilizing an advanced charge balance mechanism for outstanding low on-resistance and lower

Contextual Info: FCP600N60Z / FCPF600N60Z N-Channel SuperFET II MOSFET 600 V, 7.4 A, 600 mΩ Description Features ® ® SuperFET II MOSFET is Fairchild Semiconductor ’s first generation of high voltage super-junction SJ MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance.This advanced technology is tailored to minimize conduction loss, provide superior

Contextual Info: FCD600N60Z N-Channel SuperFET II MOSFET 600 V, 7.4 A, 600 mΩ Features Description • 650 V @ TJ = 150°C SuperFET® II MOSFET is Fairchild Semiconductor’s brand-new high voltage super-junction SJ MOSFET family that is utilizing charge balance technology for outstanding low on-resistance

AA MARKING CODE SO8

Contextual Info: AF9410N N-Channel Enhancement Mode Power MOSFET „ Features „ General Description - Simple Drive Requirement - Low On-resistance - Fast Switching Characteristic The advanced power MOSFET provides the designer with the best combination of fast switching, ruggedized device design, low on-resistance and

AF9410N

Abstract: 9410 N-channel
Contextual Info: AF9410N N-Channel Enhancement Mode Power MOSFET „ Features „ General Description - Simple Drive Requirement - Low On-resistance - Fast Switching Characteristic The advanced power MOSFET provides the designer with the best combination of fast switching, ruggedized device design, low on-resistance and

quartz KONY hc49s

Abstract: SCHEMATIC POWER SUPPLY dvbt DVB-T Schematic set top box BS4 siemens TDA6651 capacitor 476 10k 719 SMD KONY crystal KONY DVB-T Terrestrial Schematic dvbt diagram schematic
Contextual Info: APPLICATION NOTE - TDA6650/51TT 3-BAND MIXER/OSCILLATOR AND LOW NOISE PLL FOR DIGITAL AND TERRESTRIAL TUNERS AN01014 _4 Philips Semiconductors TDA6650/51TT 3-band mixer/oscillator and low noise PLL for digital and terrestrial tuners Application Note AN01014_4

STF1N105K3

Abstract: STP1N105K3
Contextual Info: STF1N105K3, STP1N105K3 N-channel 1050 V, 8 Ω typ., 1.4 A SuperMESH3 Power MOSFET in TO-220FP and TO-220 packages Datasheet − production data Features Order codes STF1N105K3 STP1N105K3 VDSS RDS on max ID 1050 V < 11 Ω 1.4 A PTOT 20 W TAB 60 W • Gate charge minimized

Contextual Info: STF1N105K3, STFW1N105K3, STP1N105K3 N-channel 1050 V, 8 Ω typ., 1.4 A SuperMESH3 Power MOSFET in TO-220FP, TO-3PF and TO-220 packages Datasheet — production data Features Order codes TAB VDS RDS on max PTOT ID 1 3 STF1N105K3 STFW1N105K3 1050 V 1 11 Ω

IR11682

Abstract: MOSFET SMPS CIRCUIT DIAGRAM ic 555 using as a voltage comparator MOSFET TO 220 MOT E SOIC8N IR1168 JESD22-A115 4015 IC circuit diagram LLC resonant transformer gate driver SR 13001
Contextual Info: Datasheet No – 97476 July 1, 2011 IR11682S DUAL SmartRectifier • • • • • • • • • • • • • DRIVER IC Product Summary Features • TM Secondary-side high speed controller for synchronous rectification in resonant half bridge topologies

IR11682

Abstract: IR11682S LLC resonant transformer gate driver mosfet ir 840 telecom smps ic 555 using as a voltage comparator IR1168 JESD22-A115 JESD78 ic for driver fet class d 14 pin
Contextual Info: Datasheet No – 97476 April 28, 2011 IR11682S DUAL SmartRectifier • • • • • • • • • • • • • DRIVER IC Product Summary Features • TM Secondary-side high speed controller for synchronous rectification in resonant half bridge topologies

marking code bb6

Contextual Info: Datasheet No – 97476 July 1, 2011 IR11682S DUAL SmartRectifierTM DRIVER IC Product Summary Features • • • • • • • • • • • • • • Secondary-side high speed controller for synchronous rectification in resonant half bridge topologies

IR11682

Abstract: SOIC8N IR11682S 4015 IC circuit diagram smart rectifier driver IRF 850 mosfet ir1168 ic for driver fet class d 14 pin m1 rectifier JESD22-A115
Contextual Info: Datasheet No – 97476 March 24, 2010 IR11682S DUAL SMART RECTIFIER DRIVER IC Product Summary Features • • • • • • • • • • • • • • Secondary-side high speed controller for Topology synchronous rectification in resonant half bridge

ic 4043

Abstract: IRFC450 SHD225505B
Contextual Info: SENSITRON SEMICONDUCTOR SHD225505B TECHNICAL DATA DATA SHEET 4043, REV. - HERMETIC POWER MOSFET N-CHANNEL DESCRIPTION: A 500 VOLT, 0.415 OHM, 12A MOSFET IN A HERMETIC TO-254 PACKAGE. Electrically Equivalent to IRFC450 MAXIMUM RATINGS ALL RATINGS ARE AT TA = 25•C UNLESS OTHERWISE SPECIFIED.

1uf tantalum capacitor

Abstract: mobile charger circuit diagram 6v dc to dc mobile charger circuit DSC servo mobile battery charging automatic off TDFN-10 LP28292
Contextual Info: Preliminary Datasheet LP28292 1.5A Single-chip Li-ion and Li-POL Charge with OVP General Description Features The LP28292 is a complete constant-current/ constantvoltage linear charger for single cell lithium-ion batteries. Its TDFN-10 package and low external component count

XC62H

Contextual Info: XC62H Series ETR0312_006 Positive Voltage Regulator with Output ON/OFF •GENERAL DESCRIPTION The XC62H series are highly precise, low power consumption, positive voltage regulators, manufactured using CMOS and laser trimming technologies. The series consists of a high precision voltage reference, an error correction circuit, and an