Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    MOSFET 800V 3A Search Results

    MOSFET 800V 3A Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TCK424G Toshiba Electronic Devices & Storage Corporation MOSFET Gate Driver IC, 2.7 to 28 V, External MOSFET Gate drive / Inrush current reducing, WCSP6G Visit Toshiba Electronic Devices & Storage Corporation
    TCK425G Toshiba Electronic Devices & Storage Corporation MOSFET Gate Driver IC, 2.7 to 28 V, External MOSFET Gate drive / Inrush current reducing, WCSP6G Visit Toshiba Electronic Devices & Storage Corporation
    TCK423G Toshiba Electronic Devices & Storage Corporation MOSFET Gate Driver IC, 2.7 to 28 V, External MOSFET Gate drive / Inrush current reducing, WCSP6G Visit Toshiba Electronic Devices & Storage Corporation
    TCK422G Toshiba Electronic Devices & Storage Corporation MOSFET Gate Driver IC, 2.7 to 28 V, External MOSFET Gate drive / Inrush current reducing, WCSP6G Visit Toshiba Electronic Devices & Storage Corporation
    MG800FXF1JMS3 Toshiba Electronic Devices & Storage Corporation N-ch SiC MOSFET Module, 3300 V, 800 A, iXPLV, High-side: SiC SBD、Low-side: SiC MOSFET Visit Toshiba Electronic Devices & Storage Corporation

    MOSFET 800V 3A Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    Untitled

    Abstract: No abstract text available
    Text: NTE2384 MOSFET N–Channel Enhancement Mode, High Speed Switch Absolute Maximum Ratings: Drain–Source Voltage, VDS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 800V Drain–Gate Voltage RGS = 20kΩ , VDGR . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 800V


    Original     		NTE2384 PDF

    6NC80Z

    Abstract: L9 Zener STB6NC80Z-1 STP6NC80Z STP6NC80ZFP stp6nc80z-1 6nc80
    Text: STP6NC80Z - STP6NC80ZFP STB6NC80Z-1 N-CHANNEL 800V - 1.5Ω - 5.4A TO-220/TO-220FP/I PAK Zener-Protected PowerMESH III MOSFET TYPE • ■ ■ ■ ■ VDSS RDS on ID STP6NC80Z/FP 800V < 1.8 Ω 5.4 A STB6NC80Z-1 800V < 1.8 Ω 5.4 A TYPICAL RDS(on) = 1.5 Ω


    Original     		STP6NC80Z STP6NC80ZFP STB6NC80Z-1 O-220/TO-220FP/I STP6NC80Z/FP O-220 O-220FP O-220) 6NC80Z L9 Zener STB6NC80Z-1 STP6NC80ZFP stp6nc80z-1 6nc80 PDF

    L9 Zener

    Abstract: STP7NC80ZFP 7NC80Z W 7NC80Z
    Text: STP7NC80Z - STP7NC80ZFP STB7NC80Z-1 N-CHANNEL 800V - 1.3Ω - 6.1A TO-220/TO-220FP/I2PAK Zener-Protected PowerMESH III MOSFET TYPE VDSS RDS on ID STP7NC80Z/FP 800V < 1.5Ω 6.1 A STB7NC80Z-1 800V < 1.5Ω 6.1 A 3 • ■ ■ ■ ■ TYPICAL RDS(on) = 1.3Ω


    Original     		STP7NC80Z STP7NC80ZFP STB7NC80Z-1 O-220/TO-220FP/I2PAK STP7NC80Z/FP O-220 O-220FP O-220) L9 Zener STP7NC80ZFP 7NC80Z W 7NC80Z PDF

    59 L2 zener

    Abstract: L9 Zener STB6NC80Z STB6NC80Z-1 STP6NC80Z STP6NC80ZFP
    Text: STP6NC80Z - STP6NC80ZFP STB6NC80Z - STB6NC80Z-1 N-CHANNEL 800V - 1.5Ω - 5.4A TO-220/FP/D²PAK/I²PAK Zener-Protected PowerMESH III MOSFET TYPE VDSS RDS on ID STP6NC80Z/FP 800V < 1.8 Ω 5.4 A STB6NC80Z/-1 800V < 1.8 Ω 5.4 A • ■ ■ ■ ■ TYPICAL RDS(on) = 1.5 Ω


    Original     		STP6NC80Z STP6NC80ZFP STB6NC80Z STB6NC80Z-1 O-220/FP/D STP6NC80Z/FP STB6NC80Z/-1 O-220 O-220FP O-220) 59 L2 zener L9 Zener STB6NC80Z-1 STP6NC80ZFP PDF

    6NC80Z

    Abstract: No abstract text available
    Text: STP6NC80Z - STP6NC80ZFP STB6NC80Z - STB6NC80Z-1 N-CHANNEL 800V - 1.5Ω - 5.4A TO-220/FP/D PAK/I PAK Zener-Protected PowerMESH III MOSFET TYPE VDSS RDS on ID STP6NC80Z/FP 800V < 1.8 Ω 5.4 A STB6NC80Z/-1 800V < 1.8 Ω 5.4 A • ■ ■ ■ ■ TYPICAL RDS(on) = 1.5 Ω


    Original     		STP6NC80Z STP6NC80ZFP STB6NC80Z STB6NC80Z-1 O-220/FP/D STP6NC80Z/FP STB6NC80Z/-1 O-220 O-220FP 6NC80Z PDF

    Untitled

    Abstract: No abstract text available
    Text: NTE2384 MOSFET N-Channel Enhancement Mode, High Speed Switch Absolute Maximum Ratings: Drain-Source Voltage TJ = +25° to +150°C , VDSS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 800V Drain-Gate Voltage (TJ = +25° to +150°C, RGS = 1MΩ), VDGR . . . . . . . . . . . . . . . . . . . . . . . . . . 800V


    Original     		NTE2384 PDF

    6NC80Z

    Abstract: MOSFET 800V 3A 59 L2 zener L9 Zener STB6NC80Z STB6NC80Z-1 STP6NC80Z STP6NC80ZFP 6nc80
    Text: STP6NC80Z - STP6NC80ZFP STB6NC80Z - STB6NC80Z-1 N-CHANNEL 800V - 1.5Ω - 5.4A TO-220/FP/D²PAK/I²PAK Zener-Protected PowerMESH III MOSFET TYPE VDSS RDS on ID STP6NC80Z/FP 800V < 1.8 Ω 5.4 A STB6NC80Z/-1 800V < 1.8 Ω 5.4 A • ■ ■ ■ ■ 3 1 TYPICAL RDS(on) = 1.5 Ω


    Original     		STP6NC80Z STP6NC80ZFP STB6NC80Z STB6NC80Z-1 O-220/FP/D STP6NC80Z/FP STB6NC80Z/-1 O-220) 6NC80Z MOSFET 800V 3A 59 L2 zener L9 Zener STB6NC80Z-1 STP6NC80ZFP 6nc80 PDF

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD 6NM80 Preliminary Power MOSFET 6A, 800V N-CHANNEL SUPER-JUNCTION MOSFET  DESCRIPTION The UTC 6NM80 is an Super Junction MOSFET Structure . It uses UTC advanced planar stripe, DMOS technology to provide customers perfect switching performance, minimal on-state


    Original     		6NM80 6NM80 6NM80L-Tat QW-R209-070 PDF

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD 6NM80 Preliminary Power MOSFET 6A, 800V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 6NM80 is a N-channel mode power MOSFET using UTC’s advanced technology to provide customers with planar stripe and DMOS technology. This technology specialized in allowing a


    Original     		6NM80 6NM80 QW-R209-070 PDF

    6n80

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD 6N80 Preliminary 6A, 800V N-CHANNEL POWER MOSFET Power MOSFET 1 TO-220 „ DESCRIPTION The UTC 6N80 is a N-channel mode power MOSFET using UTC’s advanced technology to provide customers with planar stripe and DMOS technology. This technology specialized in allowing a


    Original     		O-220 O-220F O-220F1 QW-R502-500 6n80 PDF

    Untitled

    Abstract: No abstract text available
    Text: AOTF3N80 800V, 2.8A N-Channel MOSFET General Description Product Summary The AOTF3N80 has been fabricated using an advanced high voltage MOSFET process that is designed to deliver high levels of performance and robustness in popular ACDC applications.By providing low RDS on , Ciss and Crss


    Original     		AOTF3N80 AOTF3N80 AOTF3N80L O-220F PDF

    Untitled

    Abstract: No abstract text available
    Text: AOTF3N80 800V, 2.8A N-Channel MOSFET General Description Product Summary The AOTF3N80 has been fabricated using an advanced high voltage MOSFET process that is designed to deliver high levels of performance and robustness in popular ACDC applications.By providing low RDS on , Ciss and Crss


    Original     		AOTF3N80 AOTF3N80 AOTF3N80L O-220F PDF

    Untitled

    Abstract: No abstract text available
    Text: AOD3N80 800V,2.8A N-Channel MOSFET General Description Product Summary The AOD3N80 has been fabricated using an advanced high voltage MOSFET process that is designed to deliver high levels of performance and robustness in popular ACDC applications. By providing low RDS on , Ciss and Crss along with


    Original     		AOD3N80 AOD3N80 19ABA PDF

    APQ03SN80AB

    Abstract: MOSFET 800V 3A 800VVGS
    Text: DEVICE SPECIFICATION APQ03SN80AB 800V/3A N-Channel MOSFET 1 Description These N-Channel enhancement mode power field effect transistors are produced using planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide


    Original     		APQ03SN80AB 00V/3A APQ03SN80AB-XXM0 APQ03SN80AB MOSFET 800V 3A 800VVGS PDF

    Untitled

    Abstract: No abstract text available
    Text: AOD3N80 800V,2.8A N-Channel MOSFET General Description Product Summary The AOD3N80 has been fabricated using an advanced high voltage MOSFET process that is designed to deliver high levels of performance and robustness in popular ACDC applications. By providing low RDS on , Ciss and Crss along with


    Original     		AOD3N80 AOD3N80 PDF

    P4NK80Zfp

    Abstract: P4NK80Z STP4NK80ZFP p4nk80 d4nk8 D4NK80Z
    Text: STP4NK80Z - STP4NK80ZFP STD4NK80Z - STD4NK80Z-1 N-CHANNEL 800V - 3Ω - 3A TO-220/TO-220FP/DPAK/IPAK Zener-Protected SuperMESH Power MOSFET PRELIMINARY DATA TYPE STP4NK80Z STP4NK80ZFP STD4NK80Z STD4NK80Z-1 • ■ ■ ■ ■ ■ VDSS RDS on 800 800 800


    Original     		STP4NK80Z STP4NK80ZFP STD4NK80Z STD4NK80Z-1 O-220/TO-220FP/DPAK/IPAK O-220 P4NK80Zfp P4NK80Z p4nk80 d4nk8 D4NK80Z PDF

    P4NK80Zfp

    Abstract: P4NK80Z p4nk80 d4nk8 D4NK80Z STP4NK80ZFP
    Text: STP4NK80Z - STP4NK80ZFP STD4NK80Z - STD4NK80Z-1 N-CHANNEL 800V - 3Ω - 3A TO-220/TO-220FP/DPAK/IPAK Zener-Protected SuperMESH MOSFET Figure 1: Package Table 1: General Features TYPE STP4NK80Z STP4NK80ZFP STD4NK80Z STD4NK80Z-1 • ■ ■ ■ ■ ■ VDSS


    Original     		O-220/TO-220FP/DPAK/IPAK STP4NK80Z STP4NK80ZFP STD4NK80Z STD4NK80Z-1 O-220 P4NK80Zfp P4NK80Z p4nk80 d4nk8 D4NK80Z PDF

    3N80C

    Abstract: FQPF*3N80C DATE CODE FAIRCHILD
    Text: TM FQP3N80C/FQPF3N80C 800V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to


    Original     		FQP3N80C/FQPF3N80C O-220 FQPF3N80C O-220F-3 FQPF3N80CYDTU 3N80C FQPF*3N80C DATE CODE FAIRCHILD PDF

    FQPF*3N80C

    Abstract: FQPF Series FQP3N80C FQPF3N80C MJ107
    Text: TM FQP3N80C/FQPF3N80C 800V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to


    Original     		FQP3N80C/FQPF3N80C O-220 O-220F FQPF*3N80C FQPF Series FQP3N80C FQPF3N80C MJ107 PDF

    P4NK80Zfp

    Abstract: p4nk80 d4nk8 P4NK80Z d4nk80z STP4NK80ZFP STD4NK80Z STD4NK80Z-1 STD4NK80ZT4 STP4NK80Z
    Text: STP4NK80Z - STP4NK80ZFP STD4NK80Z - STD4NK80Z-1 N-channel 800V - 3Ω - 3A - TO-220/TO-220FP/DPAK/IPAK Zener - Protected SuperMESH MOSFET General features • Type VDSS @Tjmax RDS(on) ID STP4NK80Z 800 V < 3.5 Ω 3A STP4NK80ZFP 800 V < 3.5 Ω 3A STD4NK80Z


    Original     		STP4NK80Z STP4NK80ZFP STD4NK80Z STD4NK80Z-1 O-220/TO-220FP/DPAK/IPAK STP4NK80Z STD4NK80Z O-220 P4NK80Zfp p4nk80 d4nk8 P4NK80Z d4nk80z STP4NK80ZFP STD4NK80Z-1 STD4NK80ZT4 PDF

    P4NK80Zfp

    Abstract: P4NK80Z STP4NK80ZFP STP4NK80Z D4NK80Z STD4NK80Z STD4NK80Z-1 STD4NK80ZT4 d4nk8 IPAK ST
    Text: STP4NK80Z - STP4NK80ZFP STD4NK80Z - STD4NK80Z-1 N-CHANNEL 800V - 3Ω - 3A TO-220/TO-220FP/DPAK/IPAK Zener-Protected SuperMESH Power MOSFET TYPE STP4NK80Z STP4NK80ZFP STD4NK80Z STD4NK80Z-1 • ■ ■ ■ ■ ■ VDSS RDS on 800 800 800 800 < 3.5 < 3.5


    Original     		STP4NK80Z STP4NK80ZFP STD4NK80Z STD4NK80Z-1 O-220/TO-220FP/DPAK/IPAK STP4NK80Z STD4NK80Z P4NK80Zfp P4NK80Z STP4NK80ZFP D4NK80Z STD4NK80Z-1 STD4NK80ZT4 d4nk8 IPAK ST PDF

    P4NK80Zfp

    Abstract: P4NK80Z D4NK8 p4nk80 d4nk80z STP4NK80ZFP d4nk STD4NK80ZT4 STP4NK80Z
    Text: STP4NK80Z - STP4NK80ZFP STD4NK80Z - STD4NK80Z-1 N-CHANNEL 800V - 3Ω - 3A TO-220/TO-220FP/DPAK/IPAK Zener-Protected SuperMESH MOSFET Figure 1: Package Table 1: General Features TYPE VDSS RDS on STP4NK80Z STP4NK80ZFP STD4NK80Z STD4NK80Z-1 800 V 800 V 800 V


    Original     		O-220/TO-220FP/DPAK/IPAK STP4NK80Z STP4NK80ZFP STD4NK80Z STD4NK80Z-1 O-220 P4NK80Zfp P4NK80Z D4NK8 p4nk80 d4nk80z d4nk STD4NK80ZT4 PDF

    T7111

    Abstract: No abstract text available
    Text: MITSUBISHI Neh POWER MOSFET FS3VS-16A HIGH-SPEED SWITCHING USE FS3VS-16A OUTLINE DRAWING I q J w e Q w r V d s s . 800V I d . 3A


    OCR Scan     		FS3VS-16A O-22QS 571Q-123 T7111 PDF

    Untitled

    Abstract: No abstract text available
    Text: MITSUBISHI Neh POWER MOSFET FS3KM-16A HIGH-SPEED SWITCHING USE FS3KM-16A OUTLINE DRAWING Dimensions in mm 10 ± 0.3 2.8 ± 0.2 • V ds s . 800V • TDS ON (M AX) . 3.3Q


    OCR Scan     		FS3KM-16A O-220FN PDF