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    MOSFET 719 Search Results

    MOSFET 719 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    MG800FXF1JMS3 Toshiba Electronic Devices & Storage Corporation N-ch SiC MOSFET Module, 3300 V, 800 A, iXPLV, High-side: SiC SBD、Low-side: SiC MOSFET Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation
    XPJ1R004PB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 40 V, 160 A, 0.001 Ω@10V, S-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK4K1A60F Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 600 V, 2.0 A, 4.1 Ohm@10V, TO-220SIS Visit Toshiba Electronic Devices & Storage Corporation

    MOSFET 719 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    71933

    Abstract: Mohan si4886 Si4420 siliconix Mohan power electronics converters applications a MOSFET SO-8 Si4420 siliconix datasheet SI4442 AN605 Si4420
    Text: AN605 Vishay Siliconix Power MOSFET Basics: Understanding MOSFET Characteristics Associated With The Figure of Merit Jess Brown, Guy Moxey INTRODUCTION There are several factors which affect the gate of the MOSFET, and it is necessary to understand the fundamental


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    PDF AN605 08-Sep-03 71933 Mohan si4886 Si4420 siliconix Mohan power electronics converters applications a MOSFET SO-8 Si4420 siliconix datasheet SI4442 AN605 Si4420

    Mohan power electronics converters applications a

    Abstract: mosfet Siliconix SMPS MOSFET Siliconix JFET application note n channel power trench MOSFET POWER MOSFET APPLICATION NOTE VISHAY SILICONIX JFET application note si4886
    Text: VISHAY SILICONIX Power MOSFETs Application Note 605 功率 MOSFET 基础:了解 MOSFET 与 品质因数有关的特性 作者:Jess Brown 和 Guy Moxey 简介 有几个影响 MOSFET 栅极的因素,并且在解释 MOSFET 特 性之前,有必要了解器件结构方面的基础知识。本应用指南


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    PDF Si4822 Si4880 Si4886 Si4420 Si4842 Si4430 Si4442 Si4888 Si4872 Si4874 Mohan power electronics converters applications a mosfet Siliconix SMPS MOSFET Siliconix JFET application note n channel power trench MOSFET POWER MOSFET APPLICATION NOTE VISHAY SILICONIX JFET application note

    Untitled

    Abstract: No abstract text available
    Text: V I S H AY S I L I C O N I X 功率 MOSFET 应用指南 608 功率 MOSFET 基本系列:了解栅极电荷并用来评估开关性能 Power MOSFET Basics: Understanding Gate Charge and Using it to Assess Switching Performance 作者 - Jess Brown 引言 本册是系列应用指南中的第二册,对于 MOSFET 独立器件以


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    PDF

    73315

    Abstract: AN605 siliconix mosfet N and P MOSFET
    Text: V I S H AY S I L I C O N I X 功率 MOSFET 应用指南 608 功率 MOSFET 基本系列:了解栅极电荷并用来评估开关性能 Power MOSFET Basics: Understanding Gate Charge and Using it to Assess Switching Performance 作者 - Jess Brown 引言 本册是系列应用指南中的第二册,对于 MOSFET 独立器件以


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    PDF AN605 73315 AN605 siliconix mosfet N and P MOSFET

    Si8404DB

    Abstract: No abstract text available
    Text: Si8404DB Vishay Siliconix N-Channel 1.5-V G-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.031 at VGS = 4.5 V 12.2 0.033 at VGS = 2.5 V 11.6 0.035 at VGS = 1.8 V 11.2 0.043 at VGS = 1.5 V 10.2 VDS (V) 8 Qg (Typ.) • TrenchFET Power MOSFET • Industry First 1.5 V Rated MOSFET


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    PDF Si8404DB Si8404DB-T1-E1 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12

    Si8404DB

    Abstract: No abstract text available
    Text: Si8404DB Vishay Siliconix N-Channel 1.5-V G-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.031 at VGS = 4.5 V 12.2 0.033 at VGS = 2.5 V 11.6 0.035 at VGS = 1.8 V 11.2 0.043 at VGS = 1.5 V 10.2 VDS (V) 8 Qg (Typ.) • TrenchFET Power MOSFET • Industry First 1.5 V Rated MOSFET


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    PDF Si8404DB 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    Si8404DB

    Abstract: No abstract text available
    Text: Si8404DB Vishay Siliconix N-Channel 1.5-V G-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.031 at VGS = 4.5 V 12.2 0.033 at VGS = 2.5 V 11.6 0.035 at VGS = 1.8 V 11.2 0.043 at VGS = 1.5 V 10.2 VDS (V) 8 Qg (Typ.) • TrenchFET Power MOSFET • Industry First 1.5 V Rated MOSFET


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    PDF Si8404DB Si8404DB-T1-E1 11-Mar-11

    Untitled

    Abstract: No abstract text available
    Text: CPEC RX85N75 RX85N75 Silicon N Channel Power MOSFET Description •Trench power MOSFET technology ·Fast switching speed ·Low on-resistance ·100% avalanche tested Features ·VDSS =75V ·ID =85A ·RDS on <7.5mΩ (VGS=10V) Application ·Switching application


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    PDF RX85N75 6TO-220

    Untitled

    Abstract: No abstract text available
    Text: CPEC RX85N85 RX85N85 Silicon N Channel Power MOSFET Description •Trench power MOSFET technology ·Fast switching speed ·Low on-resistance ·100% avalanche tested Features ·VDSS =85V ·ID =85A ·RDS on <7.5mΩ (VGS=10V) Application ·Switching application


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    PDF RX85N85 6TO-220

    Untitled

    Abstract: No abstract text available
    Text: CPEC RX85N08 RX85N08 Silicon N Channel Power MOSFET Description •Trench power MOSFET technology ·Fast switching speed ·Low on-resistance ·100% avalanche tested Features ·VDSS =80V ·ID =85A ·RDS on <7.5mΩ (VGS=10V) Application ·Switching application


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    PDF RX85N08 6TO-220

    marking 34A

    Abstract: IRFPS37N50A TO-274
    Text: PD- 95140 IRFPS35N50LPbF SMPS MOSFET Applications • Zero Voltage Switching SMPS • Telecom and Server Power Supplies • Uninterruptible Power Supplies • Motor Control applications • Lead-Free HEXFET Power MOSFET VDSS RDS on typ. Trr typ. ID 0.125Ω


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    PDF IRFPS35N50LPbF 170ns Super-247TM IRFPS37N50A O-247TM marking 34A IRFPS37N50A TO-274

    2SK3920

    Abstract: 2SK3920-01
    Text: 2SK3920-01 FUJI POWER MOSFET 200509 Super FAP-G Series N-CHANNEL SILICON POWER MOSFET Outline Drawings [mm] Features High speed switching No secondary breadown Avalanche-proof TO-220AB Low on-resistance Low driving power Applications Switching regulators DC-DC converters


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    PDF 2SK3920-01 O-220AB 2SK3920 2SK3920-01

    FDS6064N3

    Abstract: No abstract text available
    Text: FDS6064N3 20V N-Channel PowerTrench MOSFET General Description Features This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for


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    PDF FDS6064N3 FDS6064N3

    7191 so8

    Abstract: FDS6064N7
    Text: FDS6064N7 20V N-Channel PowerTrench MOSFET General Description Features This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for


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    PDF FDS6064N7 7191 so8 FDS6064N7

    FCPF7N60NT

    Abstract: No abstract text available
    Text: SupreMOSTM FCP7N60N / FCPF7N60NT N-Channel MOSFET 600V, 6.8A, 0.52Ω Features Description • RDS on = 0.46Ω ( Typ.) @ VGS = 10V, ID = 3.4A The SupreMOS MOSFET, Fairchild’s next generation of high voltage super-junction MOSFETs, employs a deep trench filling


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    PDF FCP7N60N FCPF7N60NT FCPF7N60NT

    Untitled

    Abstract: No abstract text available
    Text: FDS6064N7 20V N-Channel PowerTrench MOSFET General Description Features This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for


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    PDF FDS6064N7

    IRF 450 MOSFET

    Abstract: 035H IRFP26N60L IRFPE30
    Text: PD - 94611A SMPS MOSFET IRFP26N60L HEXFET Power MOSFET Applications • Zero Voltage Switching SMPS VDSS RDS on typ. Trr typ. ID • Telecom and Server Power Supplies • Uninterruptible Power Supplies 600V 170ns 26A 210mΩ • Motor Control applications


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    PDF 4611A IRFP26N60L 170ns O-247AC IRFPE30 O-247AC IRF 450 MOSFET 035H IRFP26N60L IRFPE30

    IRFPS37N50A

    Abstract: No abstract text available
    Text: PD- 95141 IRFPS40N50LPbF SMPS MOSFET HEXFET Power MOSFET Applications • Zero Voltage Switching SMPS VDSS RDS on typ. Trr typ. ID • Telecom and Server Power Supplies 500V 170ns 46A 0.087Ω • Uninterruptible Power Supplies • Motor Control applications


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    PDF IRFPS40N50LPbF 170ns Super-247TM IRFPS37N50A IRFPS37N50A

    IRFP26N60L

    Abstract: 035H IRFPE30
    Text: PD - 94611A SMPS MOSFET IRFP26N60L HEXFET Power MOSFET Applications • Zero Voltage Switching SMPS VDSS RDS on typ. Trr typ. ID • Telecom and Server Power Supplies • Uninterruptible Power Supplies 600V 170ns 26A 210mΩ • Motor Control applications


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    PDF 4611A IRFP26N60L 170ns O-247AC 12-Mar-07 IRFP26N60L 035H IRFPE30

    SO8 package fairchild

    Abstract: FDS6064N7
    Text: FDS6064N7 20V N-Channel PowerTrench MOSFET General Description Features This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for


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    PDF FDS6064N7 SO8 package fairchild FDS6064N7

    Untitled

    Abstract: No abstract text available
    Text: PD - 94611A SMPS MOSFET IRFP26N60L HEXFET Power MOSFET Applications • Zero Voltage Switching SMPS VDSS RDS on typ. Trr typ. ID • Telecom and Server Power Supplies • Uninterruptible Power Supplies 600V 170ns 26A 210mΩ • Motor Control applications


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    PDF 4611A IRFP26N60L 170ns O-247AC 10Vded 08-Mar-07

    Untitled

    Abstract: No abstract text available
    Text: PD- 95140 IRFPS35N50LPbF SMPS MOSFET Applications • Zero Voltage Switching SMPS • Telecom and Server Power Supplies • Uninterruptible Power Supplies • Motor Control applications • Lead-Free HEXFET Power MOSFET VDSS RDS on typ. Trr typ. ID 0.125Ω


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    PDF IRFPS35N50LPbF 170ns Super-247â 08-Mar-07

    Untitled

    Abstract: No abstract text available
    Text: PD - 95701 SMPS MOSFET IRFPS38N60LPbF HEXFET Power MOSFET Applications • Zero Voltage Switching SMPS • Telecom and Server Power Supplies • Uninterruptible Power Supplies • Motor Control applications • Lead-Free VDSS RDS on typ. Trr typ. ID 120mΩ


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    PDF IRFPS38N60LPbF 170ns O-247AC O-247AC

    2SK3922

    Abstract: "67A" switching supply
    Text: 2SK3922-01 FUJI POWER MOSFET 200509 Super FAP-G Series N-CHANNEL SILICON POWER MOSFET Features High speed switching No secondary breadown Avalanche-proof Low on-resistance Low driving power Outline Drawings [mm] TFP Applications Switching regulators DC-DC converters


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    PDF 2SK3922-01 2SK3922 "67A" switching supply