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    MOSFET 700V 10A Search Results

    MOSFET 700V 10A Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TCK424G Toshiba Electronic Devices & Storage Corporation MOSFET Gate Driver IC, 2.7 to 28 V, External MOSFET Gate drive / Inrush current reducing, WCSP6G Visit Toshiba Electronic Devices & Storage Corporation
    TCK425G Toshiba Electronic Devices & Storage Corporation MOSFET Gate Driver IC, 2.7 to 28 V, External MOSFET Gate drive / Inrush current reducing, WCSP6G Visit Toshiba Electronic Devices & Storage Corporation
    TCK423G Toshiba Electronic Devices & Storage Corporation MOSFET Gate Driver IC, 2.7 to 28 V, External MOSFET Gate drive / Inrush current reducing, WCSP6G Visit Toshiba Electronic Devices & Storage Corporation
    TCK422G Toshiba Electronic Devices & Storage Corporation MOSFET Gate Driver IC, 2.7 to 28 V, External MOSFET Gate drive / Inrush current reducing, WCSP6G Visit Toshiba Electronic Devices & Storage Corporation
    MG800FXF1JMS3 Toshiba Electronic Devices & Storage Corporation N-ch SiC MOSFET Module, 3300 V, 800 A, iXPLV, High-side: SiC SBD、Low-side: SiC MOSFET Visit Toshiba Electronic Devices & Storage Corporation

    MOSFET 700V 10A Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD 10N70K Power MOSFET 10A, 700V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 10N70K is an N-channel Power MOSFET using UTC’s advanced technology to provide customers a minimum on-state resistance and superior switching performance, etc.


    Original     		10N70K 10N70K 10N70KL-TF1-T 10N70KG-TF1-T O-220F1 QW-R502-A69 PDF

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD 10N70Z Power MOSFET 10A, 700V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 10N70Z is a high voltage and high current power MOSFET, designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a


    Original     		10N70Z 10N70Z QW-R502-935 PDF

    8n70

    Abstract: PIN DIODE DRIVER CIRCUITS MOSFET 700V 10A 700v 4A mosfet 8N70L-TF3-T
    Text: UNISONIC TECHNOLOGIES CO., LTD 8N70 Power MOSFET 8A, 700V N-CHANNEL POWER MOSFET „ DESCRIPTION The UTC 8N70 is an N-channel power MOSFET using UTC’s advanced technology to provide the customers with minimum on-state resistance, superior switching performance and withstand


    Original     		O-220 O-220F 8N70L-TA3-T 8N70G-TA3-T 8N70L-TF3-T 8N70G-TF3-T QW-R502-711 8n70 PIN DIODE DRIVER CIRCUITS MOSFET 700V 10A 700v 4A mosfet PDF

    10N70

    Abstract: MOSFET 700V 10A 10N70L mosfet 350v 10A 700v 10A mosfet 10N70L-TF1-T 700V mosfet driver
    Text: UNISONIC TECHNOLOGIES CO., LTD 10N70 Preliminary Power MOSFET 10A, 700V N-CHANNEL POWER MOSFET „ DESCRIPTION 1 The UTC 10N70 is a high voltage and high current power MOSFET, designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a


    Original     		10N70 10N70 O-220F O-220F1 QW-R502-572 MOSFET 700V 10A 10N70L mosfet 350v 10A 700v 10A mosfet 10N70L-TF1-T 700V mosfet driver PDF

    700v 4A mosfet

    Abstract: IDM32
    Text: UNISONIC TECHNOLOGIES CO., LTD 8N70 Power MOSFET 8A, 700V N-CHANNEL POWER MOSFET „ DESCRIPTION The UTC 8N70 is an N-channel power MOSFET using UTC’s advanced technology to provide the customers with minimum on-state resistance, superior switching performance and withstand


    Original     		O-220 O-220F 8N70L-TA3-T 8N70G-TA3-T 8N70L-TF3-T 8N70G-TF3-T QW-R502-711 700v 4A mosfet IDM32 PDF

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD 10N70-C Power MOSFET 10A, 700V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 10N70-C is a high voltage and high current power MOSFET, designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a


    Original     		10N70-C 10N70-C 10N70L-TF3-Tat QW-R502-A80 PDF

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD 10N70 Preliminary Power MOSFET 10A, 700V N-CHANNEL POWER MOSFET „ DESCRIPTION 1 The UTC 10N70 is a high voltage and high current power MOSFET, designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a


    Original     		10N70 10N70 O-220F O-220F1 QW-R502-572 PDF

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD 8N70 Preliminary Power MOSFET 8A, 700V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 8N70 is an N-channel power MOSFET using UTC’s advanced technology to provide the customers with minimum on-state resistance, superior switching performance and withstand


    Original     		112nC) 8N70L-TA3-T 8N70G-TA3-T 8N70L-TF1-T 8N70G-TF1-T 8N70L-TF3-T 8N70G-TF3-T QW-R502-711 PDF

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD Preliminary 10N70Z-Q Power MOSFET 10A, 700V N-CHANNEL POWER MOSFET „ DESCRIPTION The UTC 10N70Z-Q is a high voltage and high current power MOSFET, designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a


    Original     		10N70Z-Q 10N70Z-Q 10N70ZL-TF1-T 10N70ZG-TF1-T QW-R502-B20 PDF

    Untitled

    Abstract: No abstract text available
    Text: 10N70 UNISONIC TECHNOLOGIES CO., LTD Preliminary Power MOSFET 10A, 700V N-CHANNEL POWER MOSFET 1  DESCRIPTION TO-220F The UTC 10N70 is a high voltage and high current power MOSFET, designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a


    Original     		10N70 O-220F 10N70 O-220F1 QW-R502-572 PDF

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD 10N70-Q Preliminary Power MOSFET 10A, 700V N-CHANNEL POWER MOSFET 1  DESCRIPTION TO-220F The UTC 10N70-Q is a high voltage and high current power MOSFET, designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a


    Original     		10N70-Q O-220F 10N70-Q O-220F1 QW-R502-967. PDF

    8n70

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD 8N70 Preliminary Power MOSFET 8A, 700V N-CHANNEL POWER MOSFET „ DESCRIPTION The UTC 8N70 is an N-channel power MOSFET using UTC’s advanced technology to provide the customers with minimum on-state resistance, superior switching performance and withstand


    Original     		8N70L-TA3-T 8N70G-TA3-T 8N70L-TF3-T 8N70G-TF3-T O-220 O-220F QW-R502-711, 8n70 PDF

    10N65

    Abstract: MOSFET 700V 10A MTN10N65FP mtn10n65
    Text: CYStech Electronics Corp. N-Channel Enhancement Mode Power MOSFET MTN10N65FP Spec. No. : C725FP Issued Date : 2009.06.15 Revised Date : Page No. : 1/9 BVDSS : 700V @Tj=150℃ RDS ON : 0.75Ω ID : 10A Description The MTN10N65FP is a N-channel enhancement-mode MOSFET, providing the designer with the best


    Original     		MTN10N65FP C725FP MTN10N65FP O-220FP UL94V-0 10N65 MOSFET 700V 10A mtn10n65 PDF

    diode b10

    Abstract: MOSFET 700V 10A TSM8N70 700v 4A mosfet 700v 10A mosfet MOSFET 700V 4A
    Text: TSM8N70 700V N-Channel Power MOSFET ITO-220 PRODUCT SUMMARY Pin Definition: 1. Gate 2. Drain 3. Source VDS V RDS(on)(Ω) ID (A) 700 0.9 @ VGS =10V 4.6 General Description The TSM8N70 N-Channel enhancement mode Power MOSFET is produced by planar stripe DMOS technology.


    Original     		TSM8N70 ITO-220 TSM8N70 TSM8N70CI 50pcs diode b10 MOSFET 700V 10A 700v 4A mosfet 700v 10A mosfet MOSFET 700V 4A PDF

    Untitled

    Abstract: No abstract text available
    Text: TSM8N70 700V N-Channel Power MOSFET ITO-220 PRODUCT SUMMARY Pin Definition: 1. Gate 2. Drain 3. Source VDS V RDS(on)( )(max) ID (A) 700 0.9 @ VGS =10V 8 General Description The TSM8N70 N-Channel enhancement mode Power MOSFET is produced by planar stripe DMOS technology.


    Original     		TSM8N70 ITO-220 TSM8N70 TSM8N70CI 50pcs PDF

    N-Channel

    Abstract: MOSFET 700V 10A 700v 4A mosfet 700v 10A mosfet
    Text: TSM8N70 700V N-Channel Power MOSFET ITO-220 PRODUCT SUMMARY Pin Definition: 1. Gate 2. Drain 3. Source VDS V RDS(on)(Ω)(max) ID (A) 700 0.9 @ VGS =10V 8 General Description The TSM8N70 N-Channel enhancement mode Power MOSFET is produced by planar stripe DMOS technology.


    Original     		TSM8N70 ITO-220 TSM8N70 TSM8N70CI 50pcs N-Channel MOSFET 700V 10A 700v 4A mosfet 700v 10A mosfet PDF

    Untitled

    Abstract: No abstract text available
    Text: AOT10T60P/AOB10T60P/AOTF10T60P 600V,10A N-Channel MOSFET General Description Product Summary • Trench Power AlphaMOS-II technology • Low RDS ON • Low Ciss and Crss • High Current Capability • RoHS and Halogen Free Compliant VDS @ Tj,max 700V IDM


    Original     		AOT10T60P/AOB10T60P/AOTF10T60P O-220 O-263 O-220F AOT10T60P AOB10T60P AOTF10T60P AOT10T60PL PDF

    Untitled

    Abstract: No abstract text available
    Text: AOW10T60P/AOWF10T60P 600V,10A N-Channel MOSFET General Description Product Summary • Trench Power AlphaMOS-II technology • Low RDS ON • Low Ciss and Crss • High Current Capability • RoHS and Halogen Free Compliant VDS @ Tj,max 700V IDM 40A RDS(ON),max


    Original     		AOW10T60P/AOWF10T60P O-262F O-262 AOW10T60P AOWF10T60P PDF

    SMK0870

    Abstract: marking code 8A SMK0870F SMK-0 smk087 32nC
    Text: SMK0870F Semiconductor Advanced Power MOSFET SWITCHING REGULATOR APPLICATIONS Features • High Voltage: BVDSS=700V Min. • Low Crss : Crss=13.7pF(Typ.) • Low gate charge : Qg=32nc(Typ.) • Low RDS(on) :RDS(on)=0.9Ω(Max.) Ordering Information Type NO.


    Original     		SMK0870F SMK0870F SMK0870 O-220F-3L KSD-T0O035-000 marking code 8A SMK-0 smk087 32nC PDF

    p channel mosfet 10a 20v

    Abstract: No abstract text available
    Text: MITSUBISHI Neh POWER MOSFET j FS10SM-14A ! HIGH-SPEED SWITCHING USE FS10SM-14A • VOSS . 700V • ros O N (M A X ) . 1.3Q • Id . 10A


    OCR Scan     		FS10SM-14A p channel mosfet 10a 20v PDF

    PN channel MOSFET 10A

    Abstract: No abstract text available
    Text: MITSUBISHI Neh POWER MOSFET FS1OVS-14A HIGH-SPEED SWITCHING USE FS1 OVS-14A OUTLINE DRAWING I q J w e Q w r o- V d s s . 700V Id . 10A


    OCR Scan     		FS1OVS-14A OVS-14A O-22QS 57KH23 PN channel MOSFET 10A PDF

    n channel 700V

    Abstract: No abstract text available
    Text: MITSUBISHI Neh POWER MOSFET FS5SM-14A HIGH-SPEED SWITCHING USE OUTLINE DRAWING Dimensions in mm 4.5 15.9MAX. 3.2 hf 5.45 5.45 jbd i 0.6 bdl Qi V d s s . 700V rDS ON (MAX) . 2.6Í1


    OCR Scan     		FS5SM-14A 71Q-123 n channel 700V PDF

    FS10KM-14A

    Abstract: FS10KM14A 5A 700V MOSFET 700v 5A mosfet
    Text: MITSUBISHI Neh POWER MOSFET F S 1 0 K M - 1 4 A HIGH-SPEED SWITCHING USE FS10KM-14A OUTLINE DRAW ING Dimensions in mm 10 ±0.3 2.8 ±0.2 V d s s . 700V rDS ON (MAX) .1.3Í1


    OCR Scan     		FS10KM-14A O-22QFN 571Q-123 FS10KM-14A FS10KM14A 5A 700V MOSFET 700v 5A mosfet PDF

    Untitled

    Abstract: No abstract text available
    Text: MITSUBISHI Neh POWER MOSFET FS10UM-14A HIGH-SPEED SWITCHING USE FS10UM-14A OUTLINE DRAWING Dimensions in mm 4 .5 , . 1 .3 T < l! • VOSS . 700V • r o s O N (M A X ) I GATE DRAIN 3 SOURCE


    OCR Scan     		FS10UM-14A O-220 PDF