36N60
Abstract: 32N60 IXFN SOT227 fast diode SOT-227 D-68623
Text: IXFK 32N60 IXFK 36N60 IXFN 32N60 IXFN 36N60 Preliminary Data VDSS HiPerFETTM Power MOSFET ID25 RDS on t rr IXFK/FN 36N60 600V 36A IXFK/FN 32N60 600V 32A 0.18Ω 0.25Ω 250ns 250ns N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr TO-264 AA (IXFK)
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32N60
36N60
36N60
32N60
250ns
O-264
IXFN SOT227
fast diode SOT-227
D-68623
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Untitled
Abstract: No abstract text available
Text: IXFK 32N60 IXFK 36N60 IXFN 32N60 IXFN 36N60 Preliminary Data VDSS HiPerFETTM Power MOSFET ID25 RDS on t rr IXFK/FN 36N60 600V 36A IXFK/FN 32N60 600V 32A 0.18Ω 0.25Ω 250ns 250ns N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr TO-264 AA (IXFK)
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32N60
36N60
36N60
32N60
250ns
O-264
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Untitled
Abstract: No abstract text available
Text: SupreMOS FCA36N60NF TM tm N-Channel MOSFET, FRFET 600V, 36A, 95mΩ Features Description • RDS on = 80mΩ ( Typ.)@ VGS = 10V, ID = 18A The SupreMOS MOSFET, Fairchild’s next generation of high voltage super-junction MOSFETs, employs a deep trench filling
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FCA36N60NF
FCA36N60NF
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Untitled
Abstract: No abstract text available
Text: APTC60AM83B1G Boost chopper: VDSS = 600V RDSon = 45m max @ Tj = 25°C ID = 49A @ Tc = 25°C Boost chopper & Phase Leg Super Junction MOSFET Power Module 5 7 Phase leg: VDSS = 600V RDSon = 83m max @ Tj = 25°C ID = 36A @ Tc = 25°C 6 CR2 8 Q3 2 1 4 Q2
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APTC60AM83B1G
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Untitled
Abstract: No abstract text available
Text: APTC60AM83B1G Boost chopper: VDSS = 600V RDSon = 45mΩ max @ Tj = 25°C ID = 49A @ Tc = 25°C Boost chopper & Phase Leg Super Junction MOSFET Power Module 5 7 Phase leg: VDSS = 600V RDSon = 83mΩ max @ Tj = 25°C ID = 36A @ Tc = 25°C 6 CR2 8 Q3 2 CR1 1 4
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APTC60AM83B1G
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300V dc dc boost converter
Abstract: No abstract text available
Text: APTC60AM83B1G Boost chopper: VDSS = 600V RDSon = 45mΩ max @ Tj = 25°C ID = 49A @ Tc = 25°C Boost chopper & Phase Leg Super Junction MOSFET Power Module 5 7 Phase leg: VDSS = 600V RDSon = 83mΩ max @ Tj = 25°C ID = 36A @ Tc = 25°C 6 CR2 8 Q3 CR1 2 1 4
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APTC60AM83B1G
case150
300V dc dc boost converter
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fairchild 4245
Abstract: FCA36N60NF
Text: SupreMOS FCA36N60NF N-Channel tm SupreMOS®, FRFET®,MOSFET 600V, 36A, 95mΩ Features Description • RDS on = 80mΩ ( Typ.)@ VGS = 10V, ID = 18A The SupreMOS® MOSFET, Fairchild’s next generation of high voltage super-junction MOSFETs, employs a deep trench filling
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FCA36N60NF
FCA36N60NF
fairchild 4245
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FCP36N60N
Abstract: fcp36N60 Mosfet application note fairchild FCp Series MOSFET 600V 36A
Text: SupreMOSTM FCP36N60N N-Channel MOSFET 600V, 36A, 90m Features Description • RDS on = 81m ( Typ.)@ VGS = 10V, ID = 18A The SupreMOS MOSFET, Fairchild’s next generation of high voltage super-junction MOSFETs, employs a deep trench filling process that differentiates it from preceding multi-epi based
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FCP36N60N
FCP36N60N
fcp36N60
Mosfet application note fairchild
FCp Series
MOSFET 600V 36A
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Fairchild Semiconductor - Process
Abstract: FCP36N60N mosfet 600v
Text: SupreMOSTM FCP36N60N tm N-Channel MOSFET 600V, 36A, 90mΩ Features Description • RDS on = 81mΩ ( Typ.)@ VGS = 10V, ID = 18A The SupreMOS MOSFET, Fairchild’s next generation of high voltage super-junction MOSFETs, employs a deep trench filling process that differentiates it from preceding multi-epi based
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FCP36N60N
Fairchild Semiconductor - Process
FCP36N60N
mosfet 600v
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FCB36N60N
Abstract: ISD36A MOSFET 600V 36A
Text: SupreMOSTM FCB36N60N N-Channel MOSFET 600V, 36A, 90m Features Description • RDS on = 81m ( Typ.)@ VGS = 10V, ID = 18A The SupreMOS MOSFET, Fairchild’s next generation of high voltage super-junction MOSFETs, employs a deep trench filling process that differentiates it from preceding multi-epi based
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FCB36N60N
FCB36N60N
ISD36A
MOSFET 600V 36A
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Untitled
Abstract: No abstract text available
Text: APTC60HM83FT2G VDSS = 600V RDSon = 83m max @ Tj = 25°C ID = 36A @ Tc = 25°C Full bridge Super Junction MOSFET Power Module Application • Welding converters Switched Mode Power Supplies Uninterruptible Power Supplies Motor control Features
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APTC60HM83FT2G
APTC60HM83FT3G
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Untitled
Abstract: No abstract text available
Text: APTC60HM83FT2G VDSS = 600V RDSon = 83mΩ max @ Tj = 25°C ID = 36A @ Tc = 25°C Full bridge Super Junction MOSFET Power Module Application • Welding converters • Switched Mode Power Supplies • Uninterruptible Power Supplies • Motor control Features
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APTC60HM83FT2G
APTC60HM83FT3G
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Untitled
Abstract: No abstract text available
Text: APTC60HM83FT2G VDSS = 600V RDSon = 83mΩ max @ Tj = 25°C ID = 36A @ Tc = 25°C Full bridge Super Junction MOSFET Power Module Application • Welding converters • Switched Mode Power Supplies • Uninterruptible Power Supplies • Motor control Features
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APTC60HM83FT2G
APTC60HM83FT3G
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APT34M60B
Abstract: APT34M60S MIC4452 AG124
Text: APT34M60B APT34M60S 600V, 36A, 0.19Ω Max N-Channel MOSFET Power MOS 8 is a high speed, high voltage N-channel switch-mode power MOSFET. A proprietary planar stripe design yields excellent reliability and manufacturability. Low switching loss is achieved with low input capacitance and ultra low Crss "Miller" capacitance. The intrinsic gate resistance and capacitance of the poly-silicon gate structure
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APT34M60B
APT34M60S
APT34M60B
APT34M60S
MIC4452
AG124
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Untitled
Abstract: No abstract text available
Text: APT34M60B APT34M60S 600V, 36A, 0.19Ω Max N-Channel MOSFET Power MOS 8 is a high speed, high voltage N-channel switch-mode power MOSFET. A proprietary planar stripe design yields excellent reliability and manufacturability. Low switching loss is achieved with low input capacitance and ultra low Crss "Miller" capacitance. The intrinsic gate resistance and capacitance of the poly-silicon gate structure
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APT34M60B
APT34M60S
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Untitled
Abstract: No abstract text available
Text: APTC60AM83BC1G Boost chopper: VDSS = 600V RDSon = 45mΩ max @ Tj = 25°C ID = 49A @ Tc = 25°C Boost chopper & Phase Leg Super Junction MOSFET Power Module Application • Welding converters • Switched Mode Power Supplies • Uninterruptible Power Supplies
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APTC60AM83BC1G
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Untitled
Abstract: No abstract text available
Text: APTC60AM83BC1G Boost chopper: VDSS = 600V RDSon = 45mΩ max @ Tj = 25°C ID = 49A @ Tc = 25°C Boost chopper & Phase Leg Super Junction MOSFET Power Module Application • Welding converters • Switched Mode Power Supplies • Uninterruptible Power Supplies
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APTC60AM83BC1G
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MOSFET 600v 60a
Abstract: APTC60AM35SCT DIODE 804
Text: APTC60AM35SCT Phase leg Series & SiC parallel diodes Super Junction MOSFET Power Module NTC2 VBUS Q1 VDSS = 600V RDSon = 35mW max @ Tj = 25°C ID = 72A @ Tc = 25°C Application • Motor control · Switched Mode Power Supplies · Uninterruptible Power Supplies
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APTC60AM35SCT
MOSFET 600v 60a
APTC60AM35SCT
DIODE 804
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MOSFET Module 100v 1200A
Abstract: No abstract text available
Text: APTC60AM35SCT Phase leg Series & SiC parallel diodes Super Junction MOSFET Power Module VDSS = 600V RDSon = 35mΩ Ω max @ Tj = 25°C ID = 72A @ Tc = 25°C Application • Motor control • Switched Mode Power Supplies • Uninterruptible Power Supplies
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APTC60AM35SCT
MOSFET Module 100v 1200A
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APT0406
Abstract: APT0502 APTC60HM35T3G
Text: APTC60HM35T3G Full - Bridge VDSS = 600V RDSon = 35mΩ max @ Tj = 25°C ID = 72A @ Tc = 25°C Super Junction MOSFET Power Module Application • Welding converters • Switched Mode Power Supplies • Uninterruptible Power Supplies 13 14 Q3 11 22 Features
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APTC60HM35T3G
APT0406
APT0502
APTC60HM35T3G
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Untitled
Abstract: No abstract text available
Text: APTC60AM35SCTG Phase leg Series & SiC parallel diodes Super Junction MOSFET Power Module NTC2 VBUS VDSS = 600V RDSon = 35m max @ Tj = 25°C ID = 72A @ Tc = 25°C Application • Motor control Switched Mode Power Supplies Uninterruptible Power Supplies
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APTC60AM35SCTG
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Untitled
Abstract: No abstract text available
Text: APTC60AM83BC1G Boost chopper: VDSS = 600V RDSon = 45m max @ Tj = 25°C ID = 49A @ Tc = 25°C Boost chopper & Phase Leg Super Junction MOSFET Power Module 7 6 Application • Welding converters Switched Mode Power Supplies Uninterruptible Power Supplies
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APTC60AM83BC1G
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36N60
Abstract: 32N60 D-68623 ld25 sot-223
Text: IXFK 32N60 IXFK 36N60 IXFN 32N60 IXFN 36N60 Preliminary Data IXFK/FN 36N60 IXFK/FN 32N60 HiPerFET Power MOSFET D vv DSS ^D25 600V 600V 36A 32A DS on 0.18Q 0.25Q 250ns 250ns N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr Symbol Test Conditions
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32N60
32N60
36N60
36N60
250ns
D-68623
ld25 sot-223
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Untitled
Abstract: No abstract text available
Text: PD - 91846 International IQ R Rectifier SMPS MOSFET IR F R 1 N 6 0 A HEXFET Power MOSFET Applications • • • Switch Mode Power Supply SMPS Uninterruptable Power Supply Power Factor Correction V dss 600V R d s (o n ) m a x 7.0Î2 Id 1 .4 A Benefits
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