MOSFET P-channel SOT-23
Abstract: NTD80N02 NTD18N06 NTMS3P03R2 MLD1N06CL NTHD5904N
Text: Power MOSFET Numeric Data Sheet Listing Chapter 1: Power MOSFET Data Sheets Device Function Page 2N7000 . . . . . . . . . . . . . . . . . . . . . Small Signal MOSFET 200 mAmps, 60 Volts . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 26
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2N7000
2N7002L
MOSFET60
OT-23
BS107,
BS107A
BS108
BS170
NUD3124
NUD3160
MOSFET P-channel SOT-23
NTD80N02
NTD18N06
NTMS3P03R2
MLD1N06CL
NTHD5904N
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irf 540 mosfet
Abstract: ls 7400 PD908 014 IR MOSFET Transistor IRFM064
Text: PD-90875C POWER MOSFET THRU-HOLE TO-254AA IRFM064 60V, N-CHANNEL HEXFET MOSFET TECHNOLOGY Product Summary Part Number IRFM064 RDS(on) 0.017 Ω ID 35A* HEXFET® MOSFET technology is the key to International Rectifier’s advanced line of power MOSFET transistors.
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PD-90875C
O-254AA)
IRFM064
O-254AA.
MIL-PRF-19500
irf 540 mosfet
ls 7400
PD908
014 IR MOSFET Transistor
IRFM064
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IRFM054
Abstract: No abstract text available
Text: PD - 90709B POWER MOSFET THRU-HOLE TO-254AA IRFM054 60V, N-CHANNEL HEXFET MOSFET TECHNOLOGY Product Summary Part Number IRFM054 RDS(on) 0.027 Ω ID 35A* HEXFET® MOSFET technology is the key to International Rectifier’s advanced line of power MOSFET transistors. The
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90709B
O-254AA)
IRFM054
O-254AA.
MIL-PRF-19500
IRFM054
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IRFMJ044
Abstract: No abstract text available
Text: PD-97258 POWER MOSFET SURFACE MOUNT D3 PAK IRFMJ044 60V, N-CHANNEL HEXFET MOSFET TECHNOLOGY Product Summary Part Number IRFMJ044 RDS(on) ID 0.04 Ω 35A* HEXFET® MOSFET technology is the key to International Rectifier’s advanced line of power MOSFET transistors.
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PD-97258
IRFMJ044
IRFMJ044
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Untitled
Abstract: No abstract text available
Text: PD-97258 POWER MOSFET SURFACE MOUNT D3 PAK IRFMJ044 60V, N-CHANNEL HEXFET MOSFET TECHNOLOGY Product Summary Part Number IRFMJ044 RDS(on) ID 0.04 Ω 35A* HEXFET® MOSFET technology is the key to International Rectifier’s advanced line of power MOSFET transistors.
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PD-97258
IRFMJ044
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Untitled
Abstract: No abstract text available
Text: FDPF17N60NT N-Channel UniFETTM II MOSFET 600 V, 17 A, 340 mΩ Features Description • RDS on = 290 mΩ (Typ.) @ VGS = 10 V, ID = 8.5 A UniFETTM II MOSFET is Fairchild Semiconductor’s high voltage MOSFET family based on advanced planar stripe and DMOS technology. This advanced MOSFET family has the smallest onstate resistance among the planar MOSFET, and also provides
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FDPF17N60NT
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irf 540 mosfet
Abstract: IRFM064
Text: PD - 90875A POWER MOSFET THRU-HOLE TO-254AA IRFM064 60V, N-CHANNEL HEXFET MOSFET TECHNOLOGY Product Summary Part Number IRFM064 RDS(on) 0.017 Ω ID 35A* HEXFET® MOSFET technology is the key to International Rectifier’s advanced line of power MOSFET transistors. The
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0875A
O-254AA)
IRFM064
O-254AA.
MIL-PRF-19500
irf 540 mosfet
IRFM064
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Untitled
Abstract: No abstract text available
Text: PD-91543C POWER MOSFET SURFACE MOUNT SMD-1 IRFN054 60V, N-CHANNEL HEXFET MOSFET TECHNOLOGY Product Summary Part Number RDS(on) ID IRFN054 0.020 Ω 55A* HEXFET® MOSFET technology is the key to International Rectifier’s advanced line of power MOSFET transistors. The
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PD-91543C
IRFN054
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IRFM044
Abstract: No abstract text available
Text: PD - 90708B POWER MOSFET THRU-HOLE TO-254AA IRFM044 60V, N-CHANNEL HEXFET MOSFET TECHNOLOGY Product Summary Part Number RDS(on) IRFM044 0.04 Ω ID 35A* HEXFET® MOSFET technology is the key to International Rectifier’s advanced line of power MOSFET transistors. The
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90708B
O-254AA)
IRFM044
O-254AA.
MIL-PRF-19500
IRFM044
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Untitled
Abstract: No abstract text available
Text: PD - 90708B POWER MOSFET THRU-HOLE TO-254AA IRFM044 60V, N-CHANNEL HEXFET MOSFET TECHNOLOGY Product Summary Part Number RDS(on) IRFM044 0.04 Ω ID 35A* HEXFET® MOSFET technology is the key to International Rectifier’s advanced line of power MOSFET transistors. The
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90708B
O-254AA)
IRFM044
O-254AA.
MIL-PRF-19500
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IRFN054
Abstract: No abstract text available
Text: PD - 91543B POWER MOSFET SURFACE MOUNT SMD-1 IRFN054 60V, N-CHANNEL HEXFET MOSFET TECHNOLOGY Product Summary Part Number RDS(on) ID IRFN054 0.020 Ω 55A* HEXFET® MOSFET technology is the key to International Rectifier’s advanced line of power MOSFET transistors. The
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91543B
IRFN054
IRFN054
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IRFN054
Abstract: No abstract text available
Text: PD-91543C POWER MOSFET SURFACE MOUNT SMD-1 IRFN054 60V, N-CHANNEL HEXFET MOSFET TECHNOLOGY Product Summary Part Number RDS(on) ID IRFN054 0.020 Ω 55A* HEXFET® MOSFET technology is the key to International Rectifier’s advanced line of power MOSFET transistors. The
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PD-91543C
IRFN054
IRFN054
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Untitled
Abstract: No abstract text available
Text: PD - 90709B POWER MOSFET THRU-HOLE TO-254AA IRFM054 60V, N-CHANNEL HEXFET MOSFET TECHNOLOGY Product Summary Part Number RDS(on) 0.027 Ω IRFM054 ID 35A* HEXFET® MOSFET technology is the key to International Rectifier’s advanced line of power MOSFET transistors. The
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90709B
O-254AA)
IRFM054
O-254AA.
MIL-PRF-19500
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Untitled
Abstract: No abstract text available
Text: PD-90875C POWER MOSFET THRU-HOLE TO-254AA IRFM064 60V, N-CHANNEL HEXFET MOSFET TECHNOLOGY Product Summary Part Number RDS(on) 0.017 Ω IRFM064 ID 35A* HEXFET® MOSFET technology is the key to International Rectifier’s advanced line of power MOSFET transistors.
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PD-90875C
O-254AA)
IRFM064
O-254AA.
MIL-PRF-19500
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IRFN044
Abstract: smd diode 44a
Text: PD - 91545A POWER MOSFET SURFACE MOUNT SMD-1 IRFN044 60V, N-CHANNEL HEXFET MOSFET TECHNOLOGY Product Summary Part Number IRFN044 R DS(on) 0.04 Ω ID 44A HEXFET® MOSFET technology is the key to International Rectifier’s advanced line of power MOSFET transistors. The
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1545A
IRFN044
IRFN044
smd diode 44a
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9n90c
Abstract: 9n50c IGBT 20N50 kmb*050n60p 7N65C 5n50c smd diode S4 58a 2N60C 2N60 MOSFET SMPS str TV SMPS
Text: Power MOS -FET Selection Guide MOS-FET 2007. 2007. First First Version Version Http://www.kec.co.kr KEC-H Corp. Product classification First & Best First & Best MOSFET MOSFET SS-MOSFET MOSFET Trench TrenchMOSFET MOSFET Planar PlanarMOSFET MOSFET Pw Pw<<1W
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2N7000
2N7000A
2N7000K
70Max
45Max
55Max
80Max
9n90c
9n50c
IGBT 20N50
kmb*050n60p
7N65C
5n50c
smd diode S4 58a
2N60C
2N60 MOSFET SMPS
str TV SMPS
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Untitled
Abstract: No abstract text available
Text: FDD5N60NZ N-Channel UniFETTM II MOSFET 600 V, 4.0 A, 2 Ω Features Description • RDS on = 1.65 Ω (Typ.) @ VGS = 10 V, ID = 2.0 A UniFETTM II MOSFET is Fairchild Semiconductor’s high voltage MOSFET family based on advanced planar stripe and DMOS technology. This advanced MOSFET family has the smallest
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FDD5N60NZ
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Untitled
Abstract: No abstract text available
Text: FDPF4N60NZ N-Channel UniFETTM II MOSFET 600 V, 3.8 A, 2.5 Ω Features Description • RDS on = 1.9 Ω (Typ.) @ VGS = 10 V, ID = 1.9 A UniFETTM II MOSFET is Fairchild Semiconductor’s high voltage MOSFET family based on advanced planar stripe and DMOS technology. This advanced MOSFET family has the smallest
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FDPF4N60NZ
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FDD4N60NZ
Abstract: No abstract text available
Text: FDD4N60NZ N-Channel UniFETTM II MOSFET 600 V, 3.4 A, 2.5 Features Description • RDS on = 1.9 (Typ.) @ VGS = 10 V, ID = 1.7 A UniFETTM II MOSFET is Fairchild Semiconductor ’s high voltage MOSFET family based on advanced planar stripe and DMOS technology. This advanced MOSFET family has the
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FDD4N60NZ
FDD4N60NZ
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Untitled
Abstract: No abstract text available
Text: FDD4N60NZ N-Channel UniFETTM II MOSFET 600 V, 3.4 A, 2.5 Ω Features Description • RDS on = 1.9 Ω (Typ.) @ VGS = 10 V, ID = 1.7 A UniFETTM II MOSFET is Fairchild Semiconductor’s high voltage MOSFET family based on advanced planar stripe and DMOS technology. This advanced MOSFET family has the smallest
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FDD4N60NZ
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F16N06
Abstract: N06 MOSFET TO-252AA Package mos fet *16N06 AN9321 RFD16N06 RFD16N06SM RFD16N06SM9A TB334
Text: [ /Title RFD16 N06, RFD16 N06SM /Subject (16A, 60V, 0.047 Ohm, N-Channel Power MOSFET) /Author () /Keywords (Harris Semiconductor, NChannel Power MOSFET, TO251AA, TO252AA) /Cre- RFD16N06, RFD16N06SM Semiconductor 16A, 60V, 0.047 Ohm, N-Channel Power MOSFET
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RFD16
N06SM)
O251AA,
O252AA)
RFD16N06,
RFD16N06SM
1e-30
07e-3
19e-7)
F16N06
N06 MOSFET
TO-252AA Package mos fet
*16N06
AN9321
RFD16N06
RFD16N06SM
RFD16N06SM9A
TB334
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Untitled
Abstract: No abstract text available
Text: FDPF4N60NZ N-Channel UniFETTM II MOSFET 600 V, 3.8 A, 2.5 Features Description • RDS on = 1.9 (Typ.) @ VGS = 10 V, ID = 1.9 A UniFETTM II MOSFET is Fairchild Semiconductor ’s high voltage MOSFET family based on advanced planar stripe and DMOS technology. This advanced MOSFET family has the
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FDPF4N60NZ
FDPF4N60NZ
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Untitled
Abstract: No abstract text available
Text: FDP80N06 N-Channel UniFETTM MOSFET 60 V, 80 A, 10 mΩ Features Description • RDS on = 8.5 mΩ (Typ.) @ VGS = 10 V, ID = 40 A UniFETTM MOSFET is Fairchild Semiconductor’s high voltage MOSFET family based on planar stripe and DMOS technology. This MOSFET is tailored to reduce on-state resistance, and to
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FDP80N06
145pF)
O-220
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N mosfet 250v 600A
Abstract: mosfet 600V 100A ST mosfet 600v MOSFET Module mosfet j 114 QJQ0224005 M5 DIODE mosfet low idss mosfet 600V 100A mosfet 600a 600v
Text: QJQ0224005 Powerex Inc., 200 Hillis St., Youngwood 15697 724 925-7272 Low side Chopper Mosfet Module 250V 240A Mosfet / 600V 600A Fast Diode Description: Powerex Low side Chopper Mosfet Module designed specially for customer applications. Features: ? ?
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QJQ0224005
FS40SM-5
N mosfet 250v 600A
mosfet 600V 100A ST
mosfet 600v
MOSFET Module
mosfet j 114
QJQ0224005
M5 DIODE
mosfet low idss
mosfet 600V 100A
mosfet 600a 600v
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