Untitled
Abstract: No abstract text available
Text: FQP13N50CF / FQPF13N50CF N-Channel QFET FRFET® MOSFET 500 V, 13 A, 540 mΩ Description Features This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor®’s proprietary planar stripe and DMOS technology. This advanced MOSFET
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FQP13N50CF
FQPF13N50CF
FQPF13N50CF
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Untitled
Abstract: No abstract text available
Text: FDPF13N50FT N-Channel UniFETTM FRFET MOSFET 500 V, 12 A, 540 m Features Description • RDS on = 420 (Typ.) @ VGS = 10 V, ID = 6 A UniFETTM MOSFET is Fairchild Semiconductor®’s high voltage MOSFET family based on planar stripe and DMOS technology.
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FDPF13N50FT
FDPF13N50FT
100nsec
200nsec
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Untitled
Abstract: No abstract text available
Text: FDPF13N50FT N-Channel UniFETTM FRFET MOSFET 500 V, 12 A, 540 mΩ Features Description • RDS on = 420 mΩ (Typ.) @ VGS = 10 V, ID = 6 A UniFETTM MOSFET is Fairchild Semiconductor’s high voltage MOSFET family based on planar stripe and DMOS technology.
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FDPF13N50FT
100nsec
200nsec
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MOSFET P-channel SOT-23
Abstract: NTD80N02 NTD18N06 NTMS3P03R2 MLD1N06CL NTHD5904N
Text: Power MOSFET Numeric Data Sheet Listing Chapter 1: Power MOSFET Data Sheets Device Function Page 2N7000 . . . . . . . . . . . . . . . . . . . . . Small Signal MOSFET 200 mAmps, 60 Volts . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 26
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2N7000
2N7002L
MOSFET60
OT-23
BS107,
BS107A
BS108
BS170
NUD3124
NUD3160
MOSFET P-channel SOT-23
NTD80N02
NTD18N06
NTMS3P03R2
MLD1N06CL
NTHD5904N
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irf 540 mosfet
Abstract: ls 7400 PD908 014 IR MOSFET Transistor IRFM064
Text: PD-90875C POWER MOSFET THRU-HOLE TO-254AA IRFM064 60V, N-CHANNEL HEXFET MOSFET TECHNOLOGY Product Summary Part Number IRFM064 RDS(on) 0.017 Ω ID 35A* HEXFET® MOSFET technology is the key to International Rectifier’s advanced line of power MOSFET transistors.
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PD-90875C
O-254AA)
IRFM064
O-254AA.
MIL-PRF-19500
irf 540 mosfet
ls 7400
PD908
014 IR MOSFET Transistor
IRFM064
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irf 540 mosfet
Abstract: IRFM064
Text: PD - 90875A POWER MOSFET THRU-HOLE TO-254AA IRFM064 60V, N-CHANNEL HEXFET MOSFET TECHNOLOGY Product Summary Part Number IRFM064 RDS(on) 0.017 Ω ID 35A* HEXFET® MOSFET technology is the key to International Rectifier’s advanced line of power MOSFET transistors. The
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0875A
O-254AA)
IRFM064
O-254AA.
MIL-PRF-19500
irf 540 mosfet
IRFM064
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Untitled
Abstract: No abstract text available
Text: PD-90875C POWER MOSFET THRU-HOLE TO-254AA IRFM064 60V, N-CHANNEL HEXFET MOSFET TECHNOLOGY Product Summary Part Number RDS(on) 0.017 Ω IRFM064 ID 35A* HEXFET® MOSFET technology is the key to International Rectifier’s advanced line of power MOSFET transistors.
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PD-90875C
O-254AA)
IRFM064
O-254AA.
MIL-PRF-19500
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mosfet 4702
Abstract: 72728 IXZ2210N50L 24016 AN 78259 78442 TL 4941 69106 j934 mosfet 4942
Text: IXZ210N50L & IXZ2210N50L RF Power MOSFET N-Channel Enhancement Mode Linear 175MHz RF MOSFET Low Capacitance Z-MOSTM MOSFET Process Optimized for Linear Operation Ideal for Class AB & C MRI, Broadcast & Communications Applications 150V operating 300 & 550 Watts
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IXZ210N50L
IXZ2210N50L
175MHz
IXZ210N50L
175MHz
mosfet 4702
72728
IXZ2210N50L
24016 AN
78259
78442
TL 4941
69106
j934
mosfet 4942
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Untitled
Abstract: No abstract text available
Text: FDA24N50 N-Channel UniFETTM MOSFET 500 V, 24 A, 190 mΩ Features Description • RDS on = 160 mΩ (Typ.) @ VGS = 10 V, ID = 12 A UniFETTM MOSFET is Fairchild Semiconductor’s high voltage MOSFET family based on planar stripe and DMOS technology. This MOSFET is tailored to reduce on-state resistance, and to
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FDA24N50
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Untitled
Abstract: No abstract text available
Text: FDB52N20 N-Channel UniFETTM MOSFET 200 V, 52 A, 49 mΩ Features Description • RDS on = 49 mΩ (Max.) @ VGS = 10 V, ID = 26 A UniFETTM MOSFET is Fairchild Semiconductor’s high voltage MOSFET family based on planar stripe and DMOS technology. This MOSFET is tailored to reduce on-state resistance, and to
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FDB52N20
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Untitled
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD UT6302 Preliminary Power MOSFET P-CHANNEL ENHANCEMENT MOSFET DESCRIPTION The UTC UT6302 is a Power MOSFET offering the customers efficient and reliable performance. The UTC UT6302 is ideal for thin application environments,
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UT6302
UT6302
UT6302G-AE3-R
OT-23
6302G
QW-R502-363
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IRF820
Abstract: irf-82
Text: IRF820 Data Sheet July 1999 2.5A, 500V, 3.000 Ohm, N-Channel Power MOSFET [ /Title IRF82 0 /Subject (2.5A, 500V, 3.000 Ohm, NChannel Power MOSFET) /Autho r () /Keywords (2.5A, 500V, 3.000 Ohm, NChannel Power MOSFET, Intersil Corporation, TO220AB ) /Creator ()
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IRF820
IRF82
O220AB
IRF820
irf-82
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General Semiconductor diode marking 49
Abstract: No abstract text available
Text: FDB52N20 N-Channel UniFETTM MOSFET 500 V, 52 A, 49 m Features Description • RDS on = 49 m (Max.) VGS = 10 V, ID = 26 A UniFETTM MOSFET is Fairchild Semiconductor ’s high voltage MOSFET family based on planar stripe and DMOS technology. This MOSFET is tailored to reduce on-state resistance, and to
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FDB52N20
FDB52N20
General Semiconductor diode marking 49
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Untitled
Abstract: No abstract text available
Text: FDB52N20 N-Channel UniFETTM MOSFET 200 V, 52 A, 49 m Features Description • RDS on = 49 m (Max.) VGS = 10 V, ID = 26 A UniFETTM MOSFET is Fairchild Semiconductor ’s high voltage MOSFET family based on planar stripe and DMOS technology. This MOSFET is tailored to reduce on-state resistance, and to
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high-speed power mosfet 2Mhz
Abstract: LM27212 5Vto28V
Text: LM27222 LM27222 High-Speed 4.5A Synchronous MOSFET Driver Literature Number: SNVS306A LM27222 High-Speed 4.5A Synchronous MOSFET Driver General Description Features The LM27222 is a dual N-channel MOSFET driver designed to drive MOSFETs in push-pull configurations as typically
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LM27222
LM27222
SNVS306A
high-speed power mosfet 2Mhz
LM27212
5Vto28V
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MCH3307
Abstract: SBS004 ENN8235 2171A
Text: CPH5838 Ordering number : ENN8235 CPH5838 MOSFET : P-Channel Silicon MOSFET SBD : Schottky Barrier Diode General-Purpose Switching Device Applications Features • • DC / DC converters. Composite type with a P-Channel Sillicon MOSFET MCH3307 and a Schottky Barrier Diode (SBS004)
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CPH5838
ENN8235
MCH3307)
SBS004)
MCH3307
SBS004
ENN8235
2171A
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80 watt hf mosfet
Abstract: MRF185
Text: MOTOROLA Order this document by MRF185/D SEMICONDUCTOR TECHNICAL DATA Advance Information MRF185 The RF MOSFET Line RF POWER Field-Effect Transistor 85 WATTS, 1.0 GHz 28 VOLTS LATERAL N–CHANNEL BROADBAND RF POWER MOSFET N–Channel Enhancement–Mode Lateral MOSFET
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MRF185/D
MRF185
80 watt hf mosfet
MRF185
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Untitled
Abstract: No abstract text available
Text: FQA70N15 N-Channel QFET MOSFET 150 V, 70 A, 28 mΩ Features Description This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially
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FQA70N15
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Untitled
Abstract: No abstract text available
Text: FQA70N15 N-Channel QFET MOSFET 150 V, 70 A, 28 mΩ Features Description This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially
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FQA70N15
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Mosfet J49
Abstract: No abstract text available
Text: MOTOROLA Order this document by MRF171A/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line N–Channel Enhancement–Mode MOSFET Designed primarily for wideband large–signal output and driver stages from 30–200 MHz. 45 W, 150 MHz MOSFET BROADBAND RF POWER FET
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MRF171A/D
MRF171A
MRF171A
Mosfet J49
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SS1001
Abstract: MCH3307 MCH5836 SS10015M
Text: MCH5836 Ordering number : ENA0780A SANYO Semiconductors DATA SHEET MCH5836 MOSFET : P-Channel Silicon MOSFET SBD : Schottky Barrier Diode General-Purpose Switching Device Applications Features • • • Composite type with an P-channel silicon MOSFET MCH3307 and a schottky barrier diode (SS10015M)
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MCH5836
ENA0780A
MCH3307)
SS10015M)
PW10s,
A0780-6/6
SS1001
MCH3307
MCH5836
SS10015M
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Untitled
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD UT6302 Power MOSFET P-CHANNEL ENHANCEMENT MOSFET DESCRIPTION The UTC UT6302 is a power MOSFET offering the customers efficient and reliable performance. The UTC UT6302 is ideal for thin application environments, such as portable electronics and PCMCIA cards.
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UT6302
UT6302
UT6302L-AE3-R
UT6302G-AE3-R
OT-23
QW-R502-363
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FDB6644S
Abstract: FDP6644 FDP6644S MOSFET and parallel Schottky diode
Text: FDP6644S/FDB6644S 30V N-Channel PowerTrench SyncFET General Description Features This MOSFET is designed to replace a single MOSFET and parallel Schottky diode in synchronous DC:DC power supplies. This 30V MOSFET is designed to maximize power conversion efficiency, providing a low
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FDP6644S/FDB6644S
FDP6644S
FDP6644S/FDB6644S
FDP6644/FDB6644
FDB6644S
FDP6644
MOSFET and parallel Schottky diode
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Untitled
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD UT6302 Power MOSFET P-CHANNEL ENHANCEMENT MOSFET DESCRIPTION The UTC UT6302 is a power MOSFET offering the customers efficient and reliable performance. The UTC UT6302 is ideal for thin application environments, such as portable electronics and PCMCIA cards.
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UT6302
UT6302
UT6302L-AE2-R
UT6302G-AE2-R
UT6302L-AE3-R
UT6302G-AE3-R
OT-23-3
OT-23
QW-R502-363
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