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    MOSFET 50A 25V Search Results

    MOSFET 50A 25V Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    MG800FXF1JMS3 Toshiba Electronic Devices & Storage Corporation N-ch SiC MOSFET Module, 3300 V, 800 A, iXPLV, High-side: SiC SBD、Low-side: SiC MOSFET Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation
    XPJ1R004PB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 40 V, 160 A, 0.001 Ω@10V, S-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK4K1A60F Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 600 V, 2.0 A, 4.1 Ohm@10V, TO-220SIS Visit Toshiba Electronic Devices & Storage Corporation

    MOSFET 50A 25V Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    D50NH

    Abstract: D50NH02L STD50NH02L STD50NH02L-1 STD50NH02LT4 JESD97 d50nh02
    Text: STD50NH02L STD50NH02L-1 N-channel 24V - 0.0085Ω - 50A - DPAK/IPAK STripFET III Power MOSFET General features Type VDSS RDS on ID STD50NH02L-1 24V <0.0105Ω 50A STD50NH02L 24V <0.0105Ω 50A • Logic level device ■ RDS(ON) * Qg Industry’s benchmark


    Original     		PDF STD50NH02L STD50NH02L-1 D50NH D50NH02L STD50NH02L STD50NH02L-1 STD50NH02LT4 JESD97 d50nh02

    STB55NF06

    Abstract: p55nf06 Mosfet P55NF06 P55nf B55NF06 P55nf*06 for p55nf06 "p55nf06" b55nf p55nf06fp
    Text: STB55NF06 - STB55NF06-1 STP55NF06 - STP55NF06FP N-channel 60V - 0.015Ω - 50A - D2PAK/I2PAK/TO-220/TO-220FP STripFET II Power MOSFET General features Type VDSS RDS on ID STB55NF06 60V <0.018Ω 50A STB55NF06-1 60V <0.018Ω 50A STP55NF06 60V <0.018Ω


    Original     		PDF STB55NF06 STB55NF06-1 STP55NF06 STP55NF06FP D2PAK/I2PAK/TO-220/TO-220FP STB55NF06 STP55NF06 O-220 p55nf06 Mosfet P55NF06 P55nf B55NF06 P55nf*06 for p55nf06 "p55nf06" b55nf p55nf06fp

    p40nf10

    Abstract: STD40NF10 D40NF JESD97 STP40NF10 TF415
    Text: STD40NF10 STP40NF10 N-channel 100V - 0.025Ω - 50A TO-220 / DPAK Low gate charge STripFET II Power MOSFET Features Type VDSS RDS on Max ID STD40NF10 100V <0.028Ω 50A STP40NF10 100V <0.028Ω 50A • Exceptional dv/dt capability ■ Low gate charge ■


    Original     		PDF STD40NF10 STP40NF10 O-220 O-220 p40nf10 STD40NF10 D40NF JESD97 STP40NF10 TF415

    FDP2710

    Abstract: No abstract text available
    Text: FDP2710_F085 N-Channel PowerTrench MOSFET 250V, 50A, 47mΩ Features General Description „ Typ rDS on = 38mΩ at VGS = 10V, ID = 50A This N-Channel MOSFET is produced using Fairchil Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and


    Original     		PDF FDP2710

    D50NH02L

    Abstract: D50NH STD50NH02LT4 STD50NH02L STD50NH02L-1 JESD97 50A33 d50nh02
    Text: STD50NH02L STD50NH02L-1 N-channel 24V - 0.0085Ω - 50A - DPAK/IPAK STripFET III Power MOSFET General features Type VDSS RDS on ID STD50NH02L-1 24V <0.0105Ω 50A STD50NH02L 24V <0.0105Ω 50A 3 3 2 • Logic level device ■ RDS(ON) * Qg Industry’s benchmark


    Original     		PDF STD50NH02L STD50NH02L-1 D50NH02L D50NH STD50NH02LT4 STD50NH02L STD50NH02L-1 JESD97 50A33 d50nh02

    D40NF10

    Abstract: D40NF
    Text: STD40NF10 N-channel 100V - 0.025Ω - 50A - DPAK STripFET II Power MOSFET PRELIMINARY DATA General features Type VDSS RDS on ID STD40NF10 100V < 0.028Ω 50A • 100% avalanche tested ■ Exceptional dv/dt capability 3 1 DPAK Description This Power MOSFET is the latest development of


    Original     		PDF STD40NF10 STD40NF10 D40NF10 D40NF

    Untitled

    Abstract: No abstract text available
    Text: FDP2710_F085 N-Channel PowerTrench MOSFET 250V, 50A, 47mΩ Features General Description ̈ Typ rDS on = 38mΩ at VGS = 10V, ID = 50A This N-Channel MOSFET is produced using Fairchil Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and


    Original     		PDF FDP2710 FDP271

    SiR408DP-T1-GE3

    Abstract: No abstract text available
    Text: SiR408DP Vishay Siliconix N-Channel 25-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.0063 at VGS = 10 V 50a 0.008 at VGS = 4.5 V 50a VDS (V) 25 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • 100 % Rg Tested


    Original     		PDF SiR408DP 2002/95/EC SiR408DP-T1-GE3 18-Jul-08

    Untitled

    Abstract: No abstract text available
    Text: New Product SiR892DP Vishay Siliconix N-Channel 25-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.0032 at VGS = 10 V 50a, g 0.0042 at VGS = 4.5 V 50a, g VDS (V) 25 Qg (Typ.) 20 nC S • Low-Side MOSFET in Synchronous Buck dc-to-dc Converters


    Original     		PDF SiR892DP SiR892DP-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12

    Untitled

    Abstract: No abstract text available
    Text: New Product SiR892DP Vishay Siliconix N-Channel 25-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.0032 at VGS = 10 V 50a, g 0.0042 at VGS = 4.5 V 50a, g VDS (V) 25 Qg (Typ.) 20 nC PowerPAK SO-8 • Low-Side MOSFET in Synchronous Buck dc-to-dc


    Original     		PDF SiR892DP SiR892DP-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    k 2645 MOSFET

    Abstract: No abstract text available
    Text: New Product SiR892DP Vishay Siliconix N-Channel 25-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.0032 at VGS = 10 V 50a, g 0.0042 at VGS = 4.5 V 50a, g VDS (V) 25 Qg (Typ.) 20 nC PowerPAK SO-8 • Low-Side MOSFET in Synchronous Buck dc-to-dc


    Original     		PDF SiR892DP SiR892DP-T1-GE3 11-Mar-11 k 2645 MOSFET

    Untitled

    Abstract: No abstract text available
    Text: New Product SiR892DP Vishay Siliconix N-Channel 25-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.0032 at VGS = 10 V 50a, g 0.0042 at VGS = 4.5 V 50a, g VDS (V) 25 Qg (Typ.) 20 nC PowerPAK SO-8 • Low-Side MOSFET in Synchronous Buck dc-to-dc


    Original     		PDF SiR892DP SiR892DP-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12

    Untitled

    Abstract: No abstract text available
    Text: New Product SiR892DP Vishay Siliconix N-Channel 25-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.0032 at VGS = 10 V 50a, g 0.0042 at VGS = 4.5 V 50a, g VDS (V) 25 Qg (Typ.) 20 nC PowerPAK SO-8 • Low-Side MOSFET in Synchronous Buck dc-to-dc


    Original     		PDF SiR892DP SiR892DP-T1-GE3 11-Mar-11

    SiR892DP

    Abstract: No abstract text available
    Text: New Product SiR892DP Vishay Siliconix N-Channel 25-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.0032 at VGS = 10 V 50a, g 0.0042 at VGS = 4.5 V 50a, g VDS (V) 25 Qg (Typ.) 20 nC PowerPAK SO-8 • Low-Side MOSFET in Synchronous Buck dc-to-dc


    Original     		PDF SiR892DP SiR892DP-T1-GE3 18-Jul-08

    Untitled

    Abstract: No abstract text available
    Text: New Product SiR892DP Vishay Siliconix N-Channel 25-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.0032 at VGS = 10 V 50a, g 0.0042 at VGS = 4.5 V 50a, g VDS (V) 25 Qg (Typ.) 20 nC PowerPAK SO-8 RoHS COMPLIANT • Low-Side MOSFET in Synchronous Buck dc-to-dc


    Original     		PDF SiR892DP SiR892DP-T1-GE3 18-Jul-08

    STB55NF06

    Abstract: No abstract text available
    Text: STB55NF06 N-CHANNEL 60V - 0.018Ω - 50A D2PAK STripFET POWER MOSFET TYPE STB55NF06 • ■ ■ ■ VDSS RDS on ID 60V <0.022Ω 50A TYPICAL RDS(on) = 0.018Ω EXCEPTIONAL dv/dt CAPABILITY APPLICATION ORIENTED CHARACTERIZATION FOR THROUGH-HOLE VERSION CONTACT


    Original     		PDF STB55NF06 O-263) STB55NF06

    fairchild APPLICATION NOTE AN 9321

    Abstract: No abstract text available
    Text: RFP50N06 September 2013 Data Sheet Features N-Channel Power MOSFET 60V, 50A, 22 mΩ • 50A, 60V These N-Channel power MOSFETs are manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI integrated circuits gives


    Original     		PDF RFP50N06 175oC RFP50N06 fairchild APPLICATION NOTE AN 9321

    Untitled

    Abstract: No abstract text available
    Text: FDD16AN08A0_F085 N-Channel UltraFET Trench MOSFET 75V, 50A, 16mΩ Features Applications • r DS ON = 13mΩ (Typ.), VGS = 10V, ID = 50A • 42V Automotive Load Control • Qg(tot) = 31nC (Typ.), VGS = 10V • Starter / Alternator Systems • Low Miller Charge


    Original     		PDF FDD16AN08A0 O-252AA DD16AN08A0

    Untitled

    Abstract: No abstract text available
    Text: FDD13AN06A0 N-Channel PowerTrench MOSFET 60V, 50A, 13.5mΩ Features Applications • r DS ON = 11.5mΩ (Typ.), VGS = 10V, ID = 50A • Motor / Body Load Control • Qg(tot) = 22nC (Typ.), VGS = 10V • ABS Systems • Low Miller Charge • Powertrain Management


    Original     		PDF FDD13AN06A0 O-252AA

    Untitled

    Abstract: No abstract text available
    Text: FDD16AN08A0 N-Channel UltraFET Trench MOSFET 75V, 50A, 16mΩ Features Applications • r DS ON = 13mΩ (Typ.), VGS = 10V, ID = 50A • DC-DC converters and Off-line UPS • Qg(tot) = 31nC (Typ.), VGS = 10V • Distributed Power Architectures and VRMs


    Original     		PDF FDD16AN08A0 O-252AA 52oC/W) FDD16AN08A0

    Untitled

    Abstract: No abstract text available
    Text: FDD14AN06LA0_F085 N-Channel PowerTrench MOSFET 60V, 50A, 14.6mΩ Features Applications • r DS ON = 12.8mΩ (Typ.), VGS = 5V, ID = 50A • Motor / Body Load Control • Qg(tot) = 25nC (Typ.), VGS = 5V • ABS Systems • Low Miller Charge • Powertrain Management


    Original     		PDF FDD14AN06LA0 O-252AA

    b50ne10

    Abstract: B50NE1 STB50NE10T4 B50N JESD97 STB50NE10
    Text: STB50NE10 N-channel 100V - 0.021Ω - 50A - D2PAK STripFET Power MOSFET General features Type VDSS RDS on ID STB50NE10 100V <0.027Ω 50A • Exceptional dv/dt capability ■ 100% avalanche tested ■ Low gate charge at 100 °C ■ Application oriented characterization


    Original     		PDF STB50NE10 b50ne10 B50NE1 STB50NE10T4 B50N JESD97 STB50NE10

    Untitled

    Abstract: No abstract text available
    Text: PD-96990A 2N7585U2 IRHNA67264 250V, N-CHANNEL RADIATION HARDENED POWER MOSFET SURFACE MOUNT SMD-2 TECHNOLOGY Product Summary Part Number IRHNA67264 Radiation Level 100K Rads (Si) RDS(on) 0.040Ω ID 50A IRHNA63264 300K Rads (Si) 0.040Ω 50A International Rectifier’s R6TM technology provides


    Original     		PDF PD-96990A 2N7585U2 IRHNA67264 IRHNA63264 90MeV/ MIL-STD-750, MlL-STD-750,

    FDD13AN06A0

    Abstract: TC217
    Text: FDD13AN06A0 N-Channel PowerTrench MOSFET 60V, 50A, 13.5mΩ Features Applications • r DS ON = 11.5mΩ (Typ.), VGS = 10V, ID = 50A • Motor / Body Load Control • Qg(tot) = 22nC (Typ.), VGS = 10V • ABS Systems • Low Miller Charge • Powertrain Management


    Original     		PDF FDD13AN06A0 O-252AA FDD13AN06A0 TC217