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    MOSFET 500V 20A ULTRA FAST Search Results

    MOSFET 500V 20A ULTRA FAST Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TCK424G Toshiba Electronic Devices & Storage Corporation MOSFET Gate Driver IC, 2.7 to 28 V, External MOSFET Gate drive / Inrush current reducing, WCSP6G Visit Toshiba Electronic Devices & Storage Corporation
    TCK425G Toshiba Electronic Devices & Storage Corporation MOSFET Gate Driver IC, 2.7 to 28 V, External MOSFET Gate drive / Inrush current reducing, WCSP6G Visit Toshiba Electronic Devices & Storage Corporation
    TCK423G Toshiba Electronic Devices & Storage Corporation MOSFET Gate Driver IC, 2.7 to 28 V, External MOSFET Gate drive / Inrush current reducing, WCSP6G Visit Toshiba Electronic Devices & Storage Corporation
    TCK422G Toshiba Electronic Devices & Storage Corporation MOSFET Gate Driver IC, 2.7 to 28 V, External MOSFET Gate drive / Inrush current reducing, WCSP6G Visit Toshiba Electronic Devices & Storage Corporation
    MG800FXF1JMS3 Toshiba Electronic Devices & Storage Corporation N-ch SiC MOSFET Module, 3300 V, 800 A, iXPLV, High-side: SiC SBD、Low-side: SiC MOSFET Visit Toshiba Electronic Devices & Storage Corporation

    MOSFET 500V 20A ULTRA FAST Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    tyco igbt module 25A

    Abstract: 2kw pfc tyco igbt module 25A 1200V mosfet 600V 60A MOSFET 1200v 30a mosfet 600V 30A 2kw mosfet mosfet 1200V 40A V23990-P600-I19-PM IGBT Transistor 1200V, 25A
    Text: Power Modules Fast Power Module Solutions Vincotech is one of the market leaders in Power Modules.Target applications include motor drives, power supplies and welding equipment.With 13 different standard housings and more than 35 standard product families, Vincotech offers a wide power range


    Original     		Vincotech-012-0508 ISO9001 TS16949 tyco igbt module 25A 2kw pfc tyco igbt module 25A 1200V mosfet 600V 60A MOSFET 1200v 30a mosfet 600V 30A 2kw mosfet mosfet 1200V 40A V23990-P600-I19-PM IGBT Transistor 1200V, 25A PDF

    500W TRANSISTOR AUDIO AMPLIFIER

    Abstract: IN5822 diode irfs6408 220V ac to 9V dc converter circuit DC 48v AC 220v 500w smps P-Channel MOSFET 800v SB550 transistor drive motor 10A with transistor P channel MOSFET P channel 600v 20a IGBT list of n channel power mosfet
    Text: Power for Computing Analog Discrete Interface & Logic Power Solutions for • Conversion · Distribution · Management · Minimization There’s a lot more to power than power management. Optimizing system power in computing applications requires innovative products for power conversion, distribution,


    Original     		Power247TM, 500W TRANSISTOR AUDIO AMPLIFIER IN5822 diode irfs6408 220V ac to 9V dc converter circuit DC 48v AC 220v 500w smps P-Channel MOSFET 800v SB550 transistor drive motor 10A with transistor P channel MOSFET P channel 600v 20a IGBT list of n channel power mosfet PDF

    FDPF20N50T

    Abstract: mosfet 10a 500v 500V 100A thyristors FDP20N50 FDPF20N50
    Text: TM UniFET FDP20N50 / FDPF20N50T 500V N-Channel MOSFET Features Description • 20A, 500V, RDS on = 0.23Ω @VGS = 10 V These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.


    Original     		FDP20N50 FDPF20N50T FDPF20N50T mosfet 10a 500v 500V 100A thyristors FDPF20N50 PDF

    stepper motor driver full bridge 6A

    Abstract: mosfet 600V 20A 600v 30a IGBT 20NB50 PSO-36 igbt to220 Triac 3a 600v Motor Driver IC L293D L298N IGBT full bridge
    Text: BRUSHLESS MOTOR DRIVE STMicroelectronics SOLUTIONS Mains Pre- Rectification Regulation Inverter Tacho/ Encoder Frequency Converter Servo Motor Drive Inverter Controller Tacho/ Encoder Inverter RECOMMENDED DEVICES MAIN FEATURES Mains Rectification BTW68/69 - xxx


    Original     		BTW68/69 BF3506TV /10TV BHA/K3012TV 0-55A 00V/35A 000V/35A L4981A/B STW/Y/ExNA60 STTAxx06 stepper motor driver full bridge 6A mosfet 600V 20A 600v 30a IGBT 20NB50 PSO-36 igbt to220 Triac 3a 600v Motor Driver IC L293D L298N IGBT full bridge PDF

    FDA20

    Abstract: *20N50F
    Text: UniFET TM FDA20N50 / FDA20N50_F109 500V N-Channel MOSFET Features Description • 22A, 500V, RDS on = 0.23Ω @VGS = 10 V These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.


    Original     		FDA20N50 FDA20 *20N50F PDF

    smps with uc3842 and tl431

    Abstract: mc34063 step down with mosfet mc34063 step up with mosfet MC34063 MOSFET UC3842 step up converter mc34063 step down 5a mc34063 step up 5a MOSFET 1000v 30a uc3842 step down mc34063 triple output
    Text: POWER SUPPLY EQUIPMENT STMicroelectronics SOLUTIONS Power Converter Block Diagram Mains Mains Rectification Conditioning Mains Rectification / Inrush Current Limitation Mains Conditioning Primary Secondary Primary Secondary RECOMMENDED DEVICES MAIN FEATURES


    Original     		BF3510TV /BF3506TV BHA/K3012TV BTAxx600CW AVS08 L6560/A L6561 L4981A/B ST90T40 /W/P/HxxNB50/60/80 smps with uc3842 and tl431 mc34063 step down with mosfet mc34063 step up with mosfet MC34063 MOSFET UC3842 step up converter mc34063 step down 5a mc34063 step up 5a MOSFET 1000v 30a uc3842 step down mc34063 triple output PDF

    bridge rectifier 24V AC to 24v dc

    Abstract: 1N5408 smd diodes GSIB1560
    Text: Switch Mode Power Supply Table of Contents ADAPTOR, Buck Capacitance. 3 ADAPTOR, EMI Filtering. 4


    Original     		250ns; DO-204AL DO-41) DO-220AA V-540V; V-440V bridge rectifier 24V AC to 24v dc 1N5408 smd diodes GSIB1560 PDF

    NF 35A

    Abstract: pdm755ha
    Text: MOSFET MODULE PDM755HA Dual 75A /500V OUTLINE DRAWING FEATURES Dimension mm * Dual MOS FETs Cascaded Circuit * Prevented Body Diodes of MOSFETs by 108.0 SBDs, and Ultra Fast Recovery Diodes Connected in Parallel Circuit * 300KHz High Speed Switching Possible


    Original     		PDM755HA /500V 300KHz Dis25/W NF 35A pdm755ha PDF

    Untitled

    Abstract: No abstract text available
    Text: MOSFET MODULE P2HM755HA Dual 75A /500V OUTLINE DRAWING FEATURES Dimension mm * Dual MOS FETs Separated Circuit * Prevented Body Diodes of MOSFETs by SBDs, and Ultra Fast Recovery Diodes Connected in Parallel Circuit * 300KHz High Speed Switching Possible


    Original     		/500V P2HM755HA 300KHz 150iMAX 25i/W PDF

    Untitled

    Abstract: No abstract text available
    Text: MOSFET MODULE P2HM755HA Dual 75A /500V OUTLINE DRAWING FEATURES Dimension mm * Dual MOS FETs Separated Circuit * Prevented Body Diodes of MOSFETs by 108.0 SBDs, and Ultra Fast Recovery Diodes Connected in Parallel Circuit * 300KHz High Speed Switching Possible


    Original     		/500V P2HM755HA 300KHz 150MAX PDF

    441H

    Abstract: PD10M440H PD10M441H
    Text: MOSFET MODULE PD10M441H / PD10M440H Dual 85A 450V/500V OUTLINE DRAWING FEATURES Dimension mm * Dual MOS FETs Cascaded Circuit * Prevented Body Diodes of MOSFETs by 108.0 SBDs, and Ultra Fast Recovery Diodes Connected in Parallel Circuit * 300KHz High Speed Switching Possible


    Original     		PD10M441H PD10M440H 50V/500V 300KHz PD10M441H 171/W 441H PD10M440H PDF

    Untitled

    Abstract: No abstract text available
    Text: MOSFET MODULE PD10M441H / PD10M440H Dual 85A 450V/500V OUTLINE DRAWING FEATURES Dimension mm * Dual MOS FETs Cascaded Circuit * Prevented Body Diodes of MOSFETs by SBDs, and Ultra Fast Recovery Diodes Connected in Parallel Circuit * 300KHz High Speed Switching Possible


    Original     		50V/500V PD10M441H PD10M440H 300KHz PD10M441H 150iMAX 171i/W -441H -440H PDF

    Untitled

    Abstract: No abstract text available
    Text: MOSFET MODULE P2H10M441H / P2H10M440H Dual 85A 450V/500V OUTLINE DRAWING FEATURES Dimension mm * Dual MOS FETs Separated Circuit * Prevented Body Diodes of MOSFETs by SBDs, and Ultra Fast Recovery Diodes Connected in Parallel Circuit * 300KHz High Speed Switching Possible


    Original     		50V/500V P2H10M441H P2H10M440H 300KHz P2H10M441H 171/W -441H -440H PDF

    Untitled

    Abstract: No abstract text available
    Text: MOSFET MODULE P2H10M441H / P2H10M440H Dual 85A 450V/500V OUTLINE DRAWING FEATURES Dimension mm * Dual MOS FETs Separated Circuit * Prevented Body Diodes of MOSFETs by 108.0 SBDs, and Ultra Fast Recovery Diodes Connected in Parallel Circuit * 300KHz High Speed Switching Possible


    Original     		50V/500V P2H10M441H P2H10M440H 300KHz P2H10M441H 171/W -441H -440H PDF

    irf460lc

    Abstract: IRFP460LC IRFPE30 irf46
    Text: PD - 9.1232 IRFP460LC HEXFET Power MOSFET Ultra Low Gate Charge Reduced Gate Drive Requirement Enhanced 30V V gs Rating Reduced C iss, Coss, Crss Isolated Central Mounting Hole Dynamic dv/dt Rated Repetitive Avalanche Rated VDSS = 500V RDS on = 0.27 Ω


    Original     		IRFP460LC IRFPE30 irf460lc IRFP460LC IRFPE30 irf46 PDF

    irf460lc

    Abstract: IRF460 power mosfet 500v 20a circuit IRFP460LC equivalent IRFP460LC IRFPE30 IRF460L
    Text: Previous Datasheet Index Next Data Sheet PD - 9.1232 IRFP460LC HEXFET Power MOSFET Ultra Low Gate Charge Reduced Gate Drive Requirement Enhanced 30V V gs Rating Reduced C iss, Coss, Crss Isolated Central Mounting Hole Dynamic dv/dt Rated Repetitive Avalanche Rated


    Original     		IRFP460LC stanFPE30 irf460lc IRF460 power mosfet 500v 20a circuit IRFP460LC equivalent IRFP460LC IRFPE30 IRF460L PDF

    400V to 12V DC Regulator

    Abstract: IRHNB7460SE 400v 20A ultra fast recovery diode si 220 mh
    Text: PD - 91741A IRHNB7460SE 500V, N-CHANNEL RADIATION HARDENED POWER MOSFET SURFACE MOUNT SMD-3 ™ RAD Hard HEXFET TECHNOLOGY Product Summary Part Number IRHNB7460SE Radiation Level RDS(on) 100K Rads (Si) 0.32Ω ID 20A SMD-3 International Rectifier’s RADHardTM HEXFET® MOSFET


    Original     		1741A IRHNB7460SE MIL-STD-750, MlL-STD-750, 400V to 12V DC Regulator IRHNB7460SE 400v 20A ultra fast recovery diode si 220 mh PDF

    IRHNA7460SE

    Abstract: HEXFET Power MOSFET SMD2
    Text: PD - 91399B RADIATION HARDENED POWER MOSFET SURFACE MOUNT SMD-2 IRHNA7460SE 500V, N-CHANNEL RAD Hard HEXFET TECHNOLOGY Product Summary Part Number IRHNA7460SE Radiation Level RDS(on) 100K Rads (Si) 0.32Ω ID 20A SMD-2 International Rectifier’s RADHardTM HEXFET® MOSFET


    Original     		91399B IRHNA7460SE MIL-STD-750, MlL-STD-750, IRHNA7460SE HEXFET Power MOSFET SMD2 PDF

    IRHNA7460SE

    Abstract: No abstract text available
    Text: PD - 91399A IRHNA7460SE 500V, N-CHANNEL RADIATION HARDENED POWER MOSFET SURFACE MOUNT SMD-2 ™ RAD Hard HEXFET TECHNOLOGY Product Summary Part Number IRHNA7460SE Radiation Level RDS(on) 100K Rads (Si) 0.32Ω ID 20A SMD-2 International Rectifier’s RADHardTM HEXFET® MOSFET


    Original     		1399A IRHNA7460SE MIL-STD-750, MlL-STD-750, IRHNA7460SE PDF

    Untitled

    Abstract: No abstract text available
    Text: PD - 91399B RADIATION HARDENED POWER MOSFET SURFACE MOUNT SMD-2 IRHNA7460SE 500V, N-CHANNEL RAD Hard HEXFET TECHNOLOGY Product Summary Part Number IRHNA7460SE Radiation Level RDS(on) 100K Rads (Si) 0.32Ω ID 20A SMD-2 International Rectifier’s RADHardTM HEXFET® MOSFET


    Original     		91399B IRHNA7460SE MIL-STD-750, MlL-STD-750, PDF

    power mosfet 500v 20a circuit

    Abstract: *20N50F
    Text: UniFETTM FDA20N50F tm N-Channel MOSFET 500V, 22A, 0.26Ω Features Description • RDS on = 0.22Ω ( Typ.) @ VGS = 10V, ID = 11A These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.


    Original     		FDA20N50F FDA20N50F power mosfet 500v 20a circuit *20N50F PDF

    irf460lc

    Abstract: IRF460L IRFP460LC IRFPE30 IRF460
    Text: PD - 9.1232 IRFP460LC HEXFET Power MOSFET Ultra Low Gate Charge Reduced Gate Drive Requirement Enhanced 30V V gs Rating Reduced C iss, Coss, Crss Isolated Central Mounting Hole Dynamic dv/dt Rated Repetitive Avalanche Rated VDSS = 500V RDS on = 0.27 Ω


    Original     		IRFP460LC 12-Mar-07 irf460lc IRF460L IRFP460LC IRFPE30 IRF460 PDF

    Untitled

    Abstract: No abstract text available
    Text: PD - 9.1232 IRFP460LC HEXFET Power MOSFET Ultra Low Gate Charge Reduced Gate Drive Requirement Enhanced 30V V gs Rating Reduced C iss, Coss, Crss Isolated Central Mounting Hole Dynamic dv/dt Rated Repetitive Avalanche Rated VDSS = 500V RDS on = 0.27 Ω


    Original     		IRFP460LC 08-Mar-07 PDF

    Untitled

    Abstract: No abstract text available
    Text: International ggjRectifier P D - 9.1232 IRFP460LC HEXFET Power MOSFET • • • • • • • Ultra Low Gate Charge Reduced Gate Drive Requirement Enhanced 30V Vgs Rating Reduced CjSS, Coss, CrgS Isolated Central Mounting Hole Dynamic dv/dt Rated Repetitive Avalanche Rated


    OCR Scan     		IRFP460LC 61350BadHomburgTel: 5545E GD223D1 PDF