Mosfet J49
Abstract: No abstract text available
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field-Effect Transistor MRF171A N–Channel Enhancement–Mode MOSFET Designed primarily for wideband large–signal output and driver stages from 30–200 MHz. 45 W, 150 MHz MOSFET BROADBAND
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MRF171A
Mosfet J49
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Untitled
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD 19N10V Power MOSFET 100V N-Channel MOSFET DESCRIPTION The UTC 100V N-Channel enhancement mode power field effect transistors MOSFET are produced by UTC’s planar stripe, DMOS technology which has been tailored especially in the
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19N10V
QW-R502-914,
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12N70
Abstract: UTC12N70
Text: UNISONIC TECHNOLOGIES CO., LTD 12N70 Power MOSFET 12 Amps, 700 Volts N-CHANNEL MOSFET DESCRIPTION The UTC 12N70 are N-Channel enhancement mode power field effect transistors MOSFET which are produced using UTC’s proprietary, planar stripe, DMOS technology.
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12N70
12N70
12N70L
QW-R502-220
UTC12N70
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12n60a
Abstract: 12N60 12N60L 12n60 dc 12n60b 12A 650V MOSFET 12N-60a power mosfet 200A 12N60L-x-TF3-T 12N60G
Text: UNISONIC TECHNOLOGIES CO., LTD 12N60 Power MOSFET 12 Amps, 600/650 Volts N-CHANNEL MOSFET DESCRIPTION The UTC 12N60 are N-Channel enhancement mode power field effect transistors MOSFET which are produced using UTC’s proprietary, planar stripe, DMOS technology.
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12N60
12N60
12N60L
12N60G
QW-R502-170
12n60a
12N60L
12n60 dc
12n60b
12A 650V MOSFET
12N-60a
power mosfet 200A
12N60L-x-TF3-T
12N60G
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12n60a
Abstract: UTC12N60 12N-60a 12N60 12N60B 12N60L 12N60-A 12N60-B
Text: UNISONIC TECHNOLOGIES CO., LTD 12N60 Power MOSFET 12 Amps, 600/650 Volts N-CHANNEL MOSFET DESCRIPTION The UTC 12N60 are N-Channel enhancement mode power field effect transistors MOSFET which are produced using UTC’s proprietary, planar stripe, DMOS technology.
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12N60
12N60
12N60L
QW-R502-170
12n60a
UTC12N60
12N-60a
12N60B
12N60L
12N60-A
12N60-B
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HG62G
Abstract: HG71G154 hg62g051 HG62G019 HG71G063 HG71G HG71G030 HG62g014 HG51B HG62G035
Text: Wireless Communications ICs RF Power Amplifier Module Cellular Output PowerSupply Voltage Efficiency Part Number Standard W (V) (•/« Typ.) Technology 47% PF0025 AMPS 6.0 MOSFET 1.2 47% MOSFET PF0026 NMT900, TACS 1.2 6.0 PF0027 E-TACS 47% MOSFET 6.0 1.2
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PF0025
PF0026
NMT900,
PF0027
PF0030
PF0031
NMT900
PF0032
PF0040
PF0042
HG62G
HG71G154
hg62g051
HG62G019
HG71G063
HG71G
HG71G030
HG62g014
HG51B
HG62G035
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IXDD 614
Abstract: BJT de potencia zener diode 1N PH 48 CHN 841 lm339 igbt driver ups transformer winding formula mosfet igbt drivers theory MOSFET IGBT DRIVERS THEORY AND APPLICATIONS chn 614 diod MOSFET IGBT THEORY AND APPLICATIONS
Text: APPLICATION NOTE AN0002 MOSFET/IGBT DRIVERS THEORY AND APPLICATIONS By Abhijit D. Pathak 1. Introduction 1.1. MOSFET and IGBT Technology. 1.2. MOSFET Models and critical parameters 1.3. Turn-on and Turn-off phenomenon and their explanations 1.4. Power losses in Drivers
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AN0002
RH159NB
D-68623;
IXDD 614
BJT de potencia
zener diode 1N PH 48
CHN 841
lm339 igbt driver
ups transformer winding formula
mosfet igbt drivers theory
MOSFET IGBT DRIVERS THEORY AND APPLICATIONS
chn 614 diod
MOSFET IGBT THEORY AND APPLICATIONS
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Mosfet N-Channel 19N10, TO-251
Abstract: 19n10 19N10L-TM3-T 19n10l 19N10G-TN3-R IS156 100V n-channel MOSFET
Text: UNISONIC TECHNOLOGIES CO., LTD 19N10 Power MOSFET 100V N-Channel MOSFET DESCRIPTION The UTC 100V N-Channel enhancement mode power field effect transistors MOSFET are produced by UTC’s planar stripe, DMOS technology which has been tailored especially in the
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19N10
QW-R502-261
Mosfet N-Channel 19N10, TO-251
19n10
19N10L-TM3-T
19n10l
19N10G-TN3-R
IS156
100V n-channel MOSFET
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19n10l
Abstract: Mosfet N-Channel 19N10, TO-251 19n10 mosfet 19N10G-TQ2-T 19N10G-TN3-R
Text: UNISONIC TECHNOLOGIES CO., LTD 19N10 Power MOSFET 100V N-Channel MOSFET DESCRIPTION The UTC 100V N-Channel enhancement mode power field effect transistors MOSFET are produced by UTC’s planar stripe, DMOS technology which has been tailored especially in the
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19N10
QW-R502-261
19n10l
Mosfet N-Channel 19N10, TO-251
19n10
mosfet
19N10G-TQ2-T
19N10G-TN3-R
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UTC12N70
Abstract: 12N70 220f1 12N70L-TF3-T 12n70l
Text: UNISONIC TECHNOLOGIES CO., LTD 12N70 Power MOSFET 12 Amps, 700 Volts N-CHANNEL MOSFET DESCRIPTION The UTC 12N70 are N-Channel enhancement mode power field effect transistors MOSFET which are produced using UTC’s proprietary, planar stripe, DMOS technology.
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12N70
12N70
QW-R502-220
UTC12N70
220f1
12N70L-TF3-T
12n70l
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12n60 dc
Abstract: 12n60
Text: UNISONIC TECHNOLOGIES CO., LTD 12N60 Power MOSFET 12 Amps, 600/650 Volts N-CHANNEL MOSFET DESCRIPTION The UTC 12N60 are N-Channel enhancement mode power field effect transistors MOSFET which are produced using UTC’s proprietary, planar stripe, DMOS technology.
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12N60
12N60
12N60L
12N60G
QW-R502-170
12n60 dc
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19n10
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD 19N10 Power MOSFET 100V N-Channel MOSFET DESCRIPTION The UTC 100V N-Channel enhancement mode power field effect transistors MOSFET are produced by UTC’s planar stripe, DMOS technology which has been tailored especially in the
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19N10
QW-R502-261
19n10
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12n70
Abstract: 12n70g 12N70L-TF3-T 12N70-TF1-T power mosfet 200A 60A 45V TO-220F 12N70-TF3-T 480-V 12N70L-TA3-T BY 220 diode
Text: UNISONIC TECHNOLOGIES CO., LTD 12N70 Power MOSFET 12 Amps, 700 Volts N-CHANNEL MOSFET DESCRIPTION The UTC 12N70 are N-Channel enhancement mode power field effect transistors MOSFET which are produced using UTC’s proprietary, planar stripe, DMOS technology.
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12N70
12N70
12N70L
12N70G
QW-R502-220
12n70g
12N70L-TF3-T
12N70-TF1-T
power mosfet 200A
60A 45V TO-220F
12N70-TF3-T
480-V
12N70L-TA3-T
BY 220 diode
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Mosfet J49
Abstract: No abstract text available
Text: MOTOROLA Order this document by MRF171A/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line N–Channel Enhancement–Mode MOSFET Designed primarily for wideband large–signal output and driver stages from 30–200 MHz. 45 W, 150 MHz MOSFET BROADBAND RF POWER FET
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MRF171A/D
MRF171A
MRF171A
Mosfet J49
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IXAN0010
Abstract: 0010 ixan0010 4 ixan0010 2 MOSFET IGBT DRIVERS THEORY AND APPLICATIONS MOSFET IGBT THEORY AND APPLICATIONS 18V, 400mW Zener diodes protect mosfet igbt drivers theory IXDD408 IXDD
Text: IXAN0010 MOSFET/IGBT DRIVERS THEORY AND APPLICATIONS By Abhijit D. Pathak 1. Introduction 1.1. MOSFET and IGBT Technology. 1.2. MOSFET Models and critical parameters 1.3. Turn-on and Turn-off phenomenon and their explanations 1.4. Power losses in Drivers 2. Types of Drivers
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IXAN0010
D-68623;
IXAN0010
0010
ixan0010 4
ixan0010 2
MOSFET IGBT DRIVERS THEORY AND APPLICATIONS
MOSFET IGBT THEORY AND APPLICATIONS
18V, 400mW Zener diodes protect
mosfet igbt drivers theory
IXDD408
IXDD
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RF MOSFETs
Abstract: motorola bipolar transistor data manual application MOSFET transmitters fm amplifier RF CLASS B FET MOSFET
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line MRF173 RF Power Field E ffect Transistor N-Channel Enhancement Mode MOSFET 80 W, 28 V, 175 MHz N-CHANNEL BROADBAND RF POWER MOSFET Designed for broadband commercial and military applications up to 200 MHz
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MRF173.
AN721,
MRF173
RF MOSFETs
motorola bipolar transistor data manual
application MOSFET transmitters fm
amplifier RF CLASS B FET MOSFET
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13N50
Abstract: utc13n50 13n50g 13N50 equivalent mosfet driver 400v halogen ballast 13N50G-TA3-T
Text: UNISONIC TECHNOLOGIES CO., LTD 13N50 Preliminary Power MOSFET 500V N-CHANNEL MOSFET DESCRIPTION The UTC 13N50 is an N-Channel enhancement mode power MOSFET. The device adopts planar stripe and uses DMOS technology to minimize and provide lower on-state resistance and
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13N50
13N50
QW-R502-362
utc13n50
13n50g
13N50 equivalent
mosfet driver 400v
halogen ballast
13N50G-TA3-T
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19n10
Abstract: 19N10L Mosfet N-Channel 19N10, TO-251 POWER MOSFET Rise Time 261a
Text: UNISONIC TECHNOLOGIES CO., LTD 19N10 Preliminary Power MOSFET 100V N-Channel MOSFET DESCRIPTION The UTC 100V N-Channel enhancement mode power field effect transistors MOSFET are produced by UTC’s planar stripe, DMOS technology which has been tailored especially in the
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19N10
QW-R502-261
19n10
19N10L
Mosfet N-Channel 19N10, TO-251
POWER MOSFET Rise Time
261a
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Fairchild RoHS
Abstract: No abstract text available
Text: FQD6N25 / FQU6N25 N-Channel QFET MOSFET 250 V, 4.4 A, 1.0 Ω Description This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor ’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce
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FQD6N25
FQU6N25
FQU6N25
Fairchild RoHS
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MRF173
Abstract: No abstract text available
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line MRF173 RF Power Field Effect Transistor N–Channel Enhancement Mode MOSFET 80 W, 28 V, 175 MHz N–CHANNEL BROADBAND RF POWER MOSFET Designed for broadband commercial and military applications up to 200 MHz
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MRF173
MRF173.
AN721,
MRF173
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Untitled
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD 19N10 Power MOSFET 15.6A, 100V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 100V N-Channel enhancement mode power field effect transistors MOSFET are produced by UTC’s planar stripe, DMOS technology which has been tailored especially in the avalanche and
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19N10
QW-R502-261
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Untitled
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD 19N10 Power MOSFET 15.6A, 100V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 100V N-Channel enhancement mode power field effect transistors MOSFET are produced by UTC’s planar stripe, DMOS technology which has been tailored especially in the avalanche and
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19N10
QW-R502-261
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MRF173
Abstract: No abstract text available
Text: MOTOROLA Order this document by MRF173/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line N–Channel Enhancement Mode MOSFET 80 W, 28 V, 175 MHz N–CHANNEL BROADBAND RF POWER MOSFET ARCHIVE INFORMATION Designed for broadband commercial and military applications up to 200 MHz
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MRF173/D
MRF173
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Untitled
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD 2N70ZL Power MOSFET 2A, 700V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 2N70ZL is a high voltage MOSFET designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and high rugged avalanche characteristics.
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2N70ZL
2N70ZL
QW-R502-765
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