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    MOSFET 4936N Search Results

    MOSFET 4936N Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    MG800FXF1JMS3 Toshiba Electronic Devices & Storage Corporation N-ch SiC MOSFET Module, 3300 V, 800 A, iXPLV, High-side: SiC SBD、Low-side: SiC MOSFET Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation
    XPJ1R004PB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 40 V, 160 A, 0.001 Ω@10V, S-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK4K1A60F Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 600 V, 2.0 A, 4.1 Ohm@10V, TO-220SIS Visit Toshiba Electronic Devices & Storage Corporation

    MOSFET 4936N Datasheets Context Search

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    mosfet 4936n

    Abstract: mosfet+4936n
    Text: NTMFS4936N, NTMFS4936NC Power MOSFET 30 V, 79 A, Single N−Channel, SO−8 FL Features • Low RDS on , Low Capacitance and Optimized Gate Charge to Minimize Conduction, Driver and Switching Losses http://onsemi.com • Next Generation Enhanced Body Diode, Engineered for Soft


    Original     		PDF NTMFS4936N, NTMFS4936NC NTMFS4936N/D mosfet 4936n mosfet+4936n

    Untitled

    Abstract: No abstract text available
    Text: NTMFS4936N, NTMFS4936NC Power MOSFET 30 V, 79 A, Single N−Channel, SO−8 FL Features • Low RDS on , Low Capacitance and Optimized Gate Charge to Minimize Conduction, Driver and Switching Losses http://onsemi.com • Next Generation Enhanced Body Diode, Engineered for Soft


    Original     		PDF NTMFS4936N, NTMFS4936NC NTMFS4936N/D

    4936N

    Abstract: mosfet 4936n 92pF NTMFS4936NT1G NTMFS4936NT3G
    Text: NTMFS4936N Power MOSFET 30 V, 79 A, Single N−Channel, SO−8 FL Features • Low RDS on , Low Capacitance and Optimized Gate Charge to • Minimize Conduction, Driver and Switching Losses These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant


    Original     		PDF NTMFS4936N NTMFS4936N/D 4936N mosfet 4936n 92pF NTMFS4936NT1G NTMFS4936NT3G

    4936N

    Abstract: mosfet 4936n NTMFS4936NT1G NTMFS4936NT3G microdot NTMFS4936N
    Text: NTMFS4936N Power MOSFET 30 V, 79 A, Single N−Channel, SO−8 FL Features • Low RDS on , Low Capacitance and Optimized Gate Charge to • Minimize Conduction, Driver and Switching Losses These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant


    Original     		PDF NTMFS4936N NTMFS4936N/D 4936N mosfet 4936n NTMFS4936NT1G NTMFS4936NT3G microdot NTMFS4936N

    mosfet 4936n

    Abstract: No abstract text available
    Text: NTMFS4936N Power MOSFET 30 V, 79 A, Single N−Channel, SO−8 FL Features • Low RDS on , Low Capacitance and Optimized Gate Charge to • • Minimize Conduction, Driver and Switching Losses Next Generation Enhanced Body Diode, Engineered for Soft Recovery, Provides Schottky−Like Performance


    Original     		PDF NTMFS4936N NTMFS4936N/D mosfet 4936n

    mosfet 4936n

    Abstract: 4936N
    Text: NTMFS4936N Power MOSFET 30 V, 79 A, Single N−Channel, SO−8 FL Features • Low RDS on , Low Capacitance and Optimized Gate Charge to • • Minimize Conduction, Driver and Switching Losses Next Generation Enhanced Body Diode, Engineered for Soft Recovery, Provides Schottky−Like Performance


    Original     		PDF NTMFS4936N NTMFS4936N/D mosfet 4936n 4936N