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    MOSFET 4925N Search Results

    MOSFET 4925N Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TCK424G Toshiba Electronic Devices & Storage Corporation MOSFET Gate Driver IC, 2.7 to 28 V, External MOSFET Gate drive / Inrush current reducing, WCSP6G Visit Toshiba Electronic Devices & Storage Corporation
    TCK425G Toshiba Electronic Devices & Storage Corporation MOSFET Gate Driver IC, 2.7 to 28 V, External MOSFET Gate drive / Inrush current reducing, WCSP6G Visit Toshiba Electronic Devices & Storage Corporation
    TCK423G Toshiba Electronic Devices & Storage Corporation MOSFET Gate Driver IC, 2.7 to 28 V, External MOSFET Gate drive / Inrush current reducing, WCSP6G Visit Toshiba Electronic Devices & Storage Corporation
    TCK422G Toshiba Electronic Devices & Storage Corporation MOSFET Gate Driver IC, 2.7 to 28 V, External MOSFET Gate drive / Inrush current reducing, WCSP6G Visit Toshiba Electronic Devices & Storage Corporation
    MG800FXF1JMS3 Toshiba Electronic Devices & Storage Corporation N-ch SiC MOSFET Module, 3300 V, 800 A, iXPLV, High-side: SiC SBD、Low-side: SiC MOSFET Visit Toshiba Electronic Devices & Storage Corporation

    MOSFET 4925N Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    Untitled

    Abstract: No abstract text available
    Text: NTMFS4925NE Power MOSFET 30 V, 48 A, Single N−Channel, SO−8 FL Features • • • • • • Low RDS on to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses Dual Sided Cooling Capability


    Original     		NTMFS4925NE NTMFS4925NE/D PDF

    NTMFS4925N

    Abstract: No abstract text available
    Text: NTMFS4925NE Power MOSFET 30 V, 48 A, Single N−Channel, SO−8 FL Features • • • • • • Low RDS on to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses Dual Sided Cooling Capability


    Original     		NTMFS4925NE NTMFS4925NE/D NTMFS4925N PDF

    mosfet 4925n

    Abstract: 4925N NTMFS4925N NTMFS4925NT1G
    Text: NTMFS4925N Power MOSFET 30 V, 48 A, Single N−Channel, SO−8 FL Features • • • • • Low RDS on to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses Optimized for 5 V, 12 V Gate Drives


    Original     		NTMFS4925N NTMFS4925N/D mosfet 4925n 4925N NTMFS4925N NTMFS4925NT1G PDF

    mosfet 4925n

    Abstract: 4925n
    Text: NTMFS4925N Power MOSFET 30 V, 48 A, Single N−Channel, SO−8 FL Features • • • • • Low RDS on to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses Optimized for 5 V, 12 V Gate Drives


    Original     		NTMFS4925N NTMFS4925N/D mosfet 4925n 4925n PDF

    Untitled

    Abstract: No abstract text available
    Text: NTMFS4925N Power MOSFET 30 V, 48 A, Single N−Channel, SO−8 FL Features • • • • • Low RDS on to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses Optimized for 5 V, 12 V Gate Drives


    Original     		NTMFS4925N NTMFS4925N/D PDF

    Untitled

    Abstract: No abstract text available
    Text: NTMFS4925N Power MOSFET 30 V, 48 A, Single N−Channel, SO−8 FL Features • • • • • Low RDS on to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses Optimized for 5 V, 12 V Gate Drives


    Original     		NTMFS4925N NTMFS4925N/D PDF

    4925n

    Abstract: mosfet 4925n
    Text: NTMFS4925N Power MOSFET 30 V, 48 A, Single N−Channel, SO−8 FL Features • • • • • Low RDS on to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses Optimized for 5 V, 12 V Gate Drives


    Original     		NTMFS4925N NTMFS4925N/D 4925n mosfet 4925n PDF

    Untitled

    Abstract: No abstract text available
    Text: NTMFS4925N Power MOSFET 30 V, 48 A, Single N−Channel, SO−8 FL Features • • • • • Low RDS on to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses Optimized for 5 V, 12 V Gate Drives


    Original     		NTMFS4925N NTMFS4925N/D PDF

    Untitled

    Abstract: No abstract text available
    Text: NTMFS4925N Power MOSFET 30 V, 48 A, Single N−Channel, SO−8 FL Features • • • • • Low RDS on to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses Optimized for 5 V, 12 V Gate Drives


    Original     		NTMFS4925N NTMFS4925N/D PDF

    mosfet 4925n

    Abstract: 4925N BFR 965 NTMFS4925NT1G
    Text: NTMFS4925N Power MOSFET 30 V, 48 A, Single N−Channel, SO−8 FL Features • • • • Low RDS on to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS


    Original     		NTMFS4925N NTMFS4925N/D mosfet 4925n 4925N BFR 965 NTMFS4925NT1G PDF