MOSFET 4821N Search Results

MOSFET 4821N Result Highlights (5)

Part	ECAD Model	Manufacturer	Description	Download	Buy
MG800FXF1JMS3		Toshiba Electronic Devices & Storage Corporation	N-ch SiC MOSFET Module, 3300 V, 800 A, iXPLV, High-side: SiC SBD、Low-side: SiC MOSFET
TK190U65Z		Toshiba Electronic Devices & Storage Corporation	MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL
TK7R0E08QM		Toshiba Electronic Devices & Storage Corporation	MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB
XPJ1R004PB		Toshiba Electronic Devices & Storage Corporation	N-ch MOSFET, 40 V, 160 A, 0.001 Ω@10V, S-TOGL
TK4K1A60F		Toshiba Electronic Devices & Storage Corporation	MOSFET, N-ch, 600 V, 2.0 A, 4.1 Ohm@10V, TO-220SIS

MOSFET 4821N Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
NTMFS4821NT1G Abstract: NTMFS4821N NTMFS4821NT3G Text: NTMFS4821N Power MOSFET 30 V, 58.5 A, Single N-Channel, SO-8 FL Features •ăLow RDS on to Minimize Conduction Losses •ăLow Capacitance to Minimize Driver Losses •ăOptimized Gate Charge to Minimize Switching Losses •ăThermally Enhanced SO-8 Package	Original	NTMFS4821N NTMFS4821N/D NTMFS4821NT1G NTMFS4821N NTMFS4821NT3G	PDF
Untitled Abstract: No abstract text available Text: NTMFS4821N Power MOSFET 30 V, 58.5 A, Single N−Channel, SO−8 FL Features • • • • • Low RDS on to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses Thermally Enhanced SO−8 Package	Original	NTMFS4821N AND8195/D NTMFS4821N/D	PDF
NTMFS4821NT3G Abstract: NTMFS4821N 4821n NTMFS4821NT1G Text: NTMFS4821N Power MOSFET 30 V, 58.5 A, Single N−Channel, SO−8 FL Features • • • • • Low RDS on to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses Thermally Enhanced SO−8 Package	Original	NTMFS4821N AND8195/D NTMFS4821N/D NTMFS4821NT3G NTMFS4821N 4821n NTMFS4821NT1G	PDF
Untitled Abstract: No abstract text available Text: NTMFS4821N Power MOSFET 30 V, 58.5 A, Single N−Channel, SO−8 FL Features • • • • • Low RDS on to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses Thermally Enhanced SO−8 Package	Original	NTMFS4821N AND8195/D NTMFS4821N/D	PDF
Untitled Abstract: No abstract text available Text: NTMFS4821N Power MOSFET 30 V, 58.5 A, Single N−Channel, SO−8 FL Features • • • • • Low RDS on to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses Thermally Enhanced SO−8 Package	Original	NTMFS4821N AND8195/D NTMFS4821N/D	PDF
Untitled Abstract: No abstract text available Text: NTTFS4821N Power MOSFET 30 V, 57 A, Single N−Channel, m8FL Features • • • • Small Footprint 3.3 x 3.3 mm for Compact Design Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses This is a Pb−Free Device http://onsemi.com	Original	NTTFS4821N NTTFS4821N/D	PDF
4821n Abstract: mosfet 4821n NTTFS4821NTWG NTTFS4821N NTTFS4821NTAG Text: NTTFS4821N Power MOSFET 30 V, 57 A, Single N−Channel, m8FL Features • • • • Small Footprint 3.3 x 3.3 mm for Compact Design Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses This is a Pb−Free Device http://onsemi.com	Original	NTTFS4821N NTTFS4821N/D 4821n mosfet 4821n NTTFS4821NTWG NTTFS4821N NTTFS4821NTAG	PDF
Untitled Abstract: No abstract text available Text: NTTFS4821N Power MOSFET 30 V, 57 A, Single N−Channel, m8FL Features • • • • Small Footprint 3.3 x 3.3 mm for Compact Design Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses This is a Pb−Free Device http://onsemi.com	Original	NTTFS4821N NTTFS4821N/D	PDF