3nf CAPACITOR
Abstract: 839B IXS839S1
Text: IXYS IXS839 / IXS839A / IXS839B Synchronous Buck MOSFET Driver Features: General Description • Logic Level Gate Drive Compatible The IXS839/IXS839A/IXS839B are 2A Source / 4A Sink Synchronous Buck MOSFET Drivers. These Synchronous Buck MOSFET Drivers are specifically
|
Original
|
IXS839
IXS839A
IXS839B
IXS839/IXS839A/IXS839B
3000pF
IXS839/839B:
IXS839A/B:
3nf CAPACITOR
839B
IXS839S1
|
PDF
|
SHD239602
Abstract: mosfet 337
Text: SENSITRON SEMICONDUCTOR SHD239602 TECHNICAL DATA DATA SHEET 337, REV - HERMETIC POWER MOSFET N-CHANNEL FEATURES: 100 Volt, 0.020 Ohm MOSFET Isolated and Hermetically Sealed Surface Mount Package MAXIMUM RATINGS ALL RATINGS ARE AT TA = 25C UNLESS OTHERWISE SPECIFIED.
|
Original
|
SHD239602
250mA
SHD239602
mosfet 337
|
PDF
|
mosfet 337
Abstract: No abstract text available
Text: SENSITRON SEMICONDUCTOR SHD239602 TECHNICAL DATA DATA SHEET 337, REV - HERMETIC POWER MOSFET N-CHANNEL FEATURES: 100 Volt, 0.020 Ohm MOSFET Isolated and Hermetically Sealed Surface Mount Package MAXIMUM RATINGS ALL RATINGS ARE AT TA = 25C UNLESS OTHERWISE SPECIFIED.
|
Original
|
SHD239602
250mA
SO631)
SHD239602
mosfet 337
|
PDF
|
Untitled
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD Preliminary UTT40P04 Power MOSFET 40V, 50A P-CHANNEL POWER MOSFET DESCRIPTION The UTC UTT40P04 is a P-channel power MOSFET using UTC’s advanced technology to provide the customers with high switching speed and a minimum on-state resistance. It can also withstand high
|
Original
|
UTT40P04
UTT40P04
UTT40P04L-TA3-T
UTT40P04G-TA3-T
QW-R502-616
|
PDF
|
Untitled
Abstract: No abstract text available
Text: ECO-PACTM 2 CoolMOS Power MOSFET PSHM 40D/06 in ECO-PAC 2 N-Channel Enhancement Mode Low RDSon, High VDSS MOSFET Package with Electrically Isolated Base ID25 VDSS RDSon 1 L4 L6 L9 P18 R18 K12 NTC F10 Preliminary Data Sheet K13 MOSFET Symbol VDSS VGS ID25
|
Original
|
40D/06
B25/50
|
PDF
|
transistor P18
Abstract: No abstract text available
Text: ECO-PACTM 2 CoolMOS Power MOSFET ID25 VDSS RDSon PSMI 40/06 in ECO-PAC 2 N-Channel Enhancement Mode Low RDSon, High VDSS MOSFET Package with Electrically Isolated Base = 38 A = 600 V Ω = 70 mΩ 1 L4 L6 K12 L9 P18 R18 NTC Preliminary Data Sheet K13 MOSFET
|
Original
|
|
PDF
|
NTC K15
Abstract: 125OC PSMG150
Text: ECO-PACTM 2 Power MOSFET in ECO-PAC 2 PSMG 150/01* Single MOSFET Die X18 I K10/11 A1 L N 8/9 Preliminary Data Sheet K13 MOSFET VDSS ID25 RDS on trr *NTC optional K15 Symbol Test Conditions V DSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ
|
Original
|
K10/11
125OC
NTC K15
125OC
PSMG150
|
PDF
|
uc3854 3kw pfc
Abstract: uc3854 Application Note Power Factor Correction With the UC3854 2kw pfc uc3854 3kw PFC 3kw APT9901 UNITRODE Claudio de Sa e Silva 3.5kw pfc 3kw uc3854
Text: APPLICATION NOTE APT9901 By: Kenneth Dierberger Denis Grafham OPTIMIZING THE DESIGN OF 3.5kW SINGLE-MOSFET POWER FACTOR CORRECTORS 1 APT9901 Optimizing The Design of 3.5kW Single-MOSFET Power Factor Correctors Kenneth Dierberger, Technical Marketing Manager
|
Original
|
APT9901
B-1330
uc3854 3kw pfc
uc3854 Application Note
Power Factor Correction With the UC3854
2kw pfc
uc3854 3kw
PFC 3kw
APT9901
UNITRODE Claudio de Sa e Silva
3.5kw pfc
3kw uc3854
|
PDF
|
Untitled
Abstract: No abstract text available
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistor N–Channel Enhancement–Mode Lateral MOSFET The MRF1518T1 is designed for broadband commercial and industrial applications at frequencies to 520 MHz. The high gain and broadband
|
Original
|
MRF1518T1
AN215A,
|
PDF
|
AN569
Abstract: MTB36N06V MTB36N06VT4
Text: MTB36N06V Preferred Device Power MOSFET 32 Amps, 60 Volts N–Channel D2PAK This Power MOSFET is designed to withstand high energy in the avalanche and commutation modes. Designed for low voltage, high speed switching applications in power supplies, converters and power
|
Original
|
MTB36N06V
r14525
MTB36N06V/D
AN569
MTB36N06V
MTB36N06VT4
|
PDF
|
HS-4424
Abstract: HS4424B 5962F9951102VXC 5962F9951101VXC HS-4423 IS1715 HS-4423RH hs4423brh HS- RH HS4423
Text: HS-4423RH, HS-4423BRH Data Sheet June 1999 Radiation Hardened Dual, Inverting Power MOSFET Drivers The Radiation Hardened HS-4423RH and the HS-4423BRH are inverting, dual, monolithic high-speed MOSFET drivers designed to convert TTL level signals into high current
|
Original
|
HS-4423RH,
HS-4423BRH
HS-4423RH
HS-4423BRH
HS-1825ARH
FS055,
HS-4424BRH
HS-4424RH
IS-1715ARH
HS-4424
HS4424B
5962F9951102VXC
5962F9951101VXC
HS-4423
IS1715
hs4423brh
HS- RH
HS4423
|
PDF
|
FDD4141
Abstract: No abstract text available
Text: FDD4141 tm P-Channel PowerTrench MOSFET -40V, -50A, 12.3mΩ Features General Description ̈ Max rDS on = 12.3mΩ at VGS = -10V, ID = -12.7A This P-Channel MOSFET has been produced using Fairchild Semiconductor’s proprietary PowerTrench® technology to
|
Original
|
FDD4141
-PA52
FDD4141
|
PDF
|
5962F9951102VXC
Abstract: HS-4423BRH HS-4423RH 5962F9951101VXC 5962F9951101QXC HS9-4423RH-Q HS-1825ARH HS9-4423BRH-Q 5962F9951102QXC
Text: HS-4423RH, HS-4423BRH Data Sheet June 1999 Radiation Hardened Dual, Inverting Power MOSFET Drivers The Radiation Hardened HS-4423RH and the HS-4423BRH are inverting, dual, monolithic high-speed MOSFET drivers designed to convert TTL level signals into high current
|
Original
|
HS-4423RH,
HS-4423BRH
HS-4423RH
HS-1825ARH
FS055,
5962F9951102VXC
HS-4423BRH
5962F9951101VXC
5962F9951101QXC
HS9-4423RH-Q
HS9-4423BRH-Q
5962F9951102QXC
|
PDF
|
FDD4141-F085
Abstract: FDD4141 25c337 fdd4141_f085 Fairchild FDD4141
Text: FDD4141_F085 P-Channel PowerTrench MOSFET -40V, -50A, 12.3mΩ Features General Description Max rDS on = 12.3mΩ at VGS = -10V, ID = -12.7A This P-Channel MOSFET has been produced using Fairchild Semiconductor’s proprietary PowerTrench® technology to
|
Original
|
FDD4141
FDD4141-F085
25c337
fdd4141_f085
Fairchild FDD4141
|
PDF
|
|
|
FDD4141
Abstract: Fairchild FDD4141
Text: FDD4141 tm P-Channel PowerTrench MOSFET -40V, -50A, 12.3mΩ Features General Description Max rDS on = 12.3mΩ at VGS = -10V, ID = -12.7A This P-Channel MOSFET has been produced using Fairchild Semiconductor’s proprietary PowerTrench® technology to
|
Original
|
FDD4141
-PA52
FDD4141
Fairchild FDD4141
|
PDF
|
Untitled
Abstract: No abstract text available
Text: FDD4141_F085 P-Channel PowerTrench MOSFET -40V, -50A, 12.3mΩ Features General Description Max rDS on = 12.3mΩ at VGS = -10V, ID = -12.7A This P-Channel MOSFET has been produced using Fairchild Semiconductor’s proprietary PowerTrench® technology to
|
Original
|
FDD4141
|
PDF
|
VS-40MT060WFHT
Abstract: 01100-T
Text: VS-40MT060WFHT www.vishay.com Vishay Semiconductors Full Bridge IGBT and MOSFET MTP Power Module FEATURES • Generation 4 warp speed IGBT and power MOSFET technology • HEXFRED antiparallel diodes with ultrasoft reverse recovery • Very low conduction and switching losses
|
Original
|
VS-40MT060WFHT
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
VS-40MT060WFHT
01100-T
|
PDF
|
Untitled
Abstract: No abstract text available
Text: FDD4141_F085 P-Channel PowerTrench MOSFET -40V, -50A, 12.3mΩ Features General Description ̈ Max rDS on = 12.3mΩ at VGS = -10V, ID = -12.7A This P-Channel MOSFET has been produced using Fairchild Semiconductor’s proprietary PowerTrench® technology to
|
Original
|
FDD4141
|
PDF
|
AAT4615
Abstract: AAT4615ITP-T1
Text: AAT4615 2.25A Current Limited Load Switch General Description Features The AAT4615 SmartSwitch is a member of AnalogicTech™'s Application Specific Power MOSFET™ ASPM™ product family. It is a Current Limited P-channel MOSFET power switch designed
|
Original
|
AAT4615
AAT4615
AAT4615ITP-T1
|
PDF
|
RMW150N03
Abstract: No abstract text available
Text: Data Sheet 4.5V Drive Nch MOSFET RMW150N03 Structure Silicon N-channel MOSFET Dimensions Unit : mm (8) (6) (5) 5.0 6.0 Features 1) High Power package(PSOP8). 2) High-speed switching,Low On-resistance. 3) Low voltage drive(4.5V drive). (7) 0.5
|
Original
|
RMW150N03
RMW150N03
Pw10s,
R1120A
|
PDF
|
AN1001
Abstract: AN-994 IRFB59N10D IRFS59N10D IRFSL59N10D
Text: PD - 93890 IRFB59N10D IRFS59N10D IRFSL59N10D SMPS MOSFET HEXFET Power MOSFET Applications l High frequency DC-DC converters VDSS RDS on max ID 100V 0.025Ω 59A Benefits l Low Gate-to-Drain Charge to Reduce Switching Losses l Fully Characterized Capacitance Including
|
Original
|
IRFB59N10D
IRFS59N10D
IRFSL59N10D
AN1001)
O-220AB
O-262
Dissipation52-7105
AN1001
AN-994
IRFB59N10D
IRFS59N10D
IRFSL59N10D
|
PDF
|
Untitled
Abstract: No abstract text available
Text: PMV170UN 20 V, single N-channel Trench MOSFET 3 August 2012 Product data sheet 1. Product profile 1.1 General description N-channel enhancement mode Field-Effect Transistor FET in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET
|
Original
|
PMV170UN
O-236AB)
|
PDF
|
MTP36N06V
Abstract: TO-220AB/5 AN569 MTP30N06V
Text: MTP36N06V Preferred Device Power MOSFET 32 Amps, 60 Volts N−Channel TO−220 This Power MOSFET is designed to withstand high energy in the avalanche and commutation modes. Designed for low voltage, high speed switching applications in power supplies, converters and power
|
Original
|
MTP36N06V
O-220
MTP36N06V/D
MTP36N06V
TO-220AB/5
AN569
MTP30N06V
|
PDF
|
Untitled
Abstract: No abstract text available
Text: HS-4423RH, HS-4423BRH Data Sheet June 1999 Radiation Hardened Dual, Inverting Power MOSFET Drivers The Radiation Hardened HS-4423RH and the HS-4423BRH are inverting, dual, monolithic high-speed MOSFET drivers designed to convert TTL level signals into high current
|
OCR Scan
|
HS-4423RH,
HS-4423BRH
HS-4423RH
HS-1825ARH
FS055,
1-800-4-HARRIS
|
PDF
|
