2N6782
Abstract: 2N67 TB334
Text: [ /Title 2N67 82 /Subject (3.5A, 100V, 0.600 Ohm, NChannel Power MOSFET) /Autho r () /Keywords (Fairchild Corporation, NChannel Power MOSFET, TO205AF ) /Creator () /DOCI NFO pdfmark 2N6782 Data Sheet December 2001 3.5A, 100V, 0.600 Ohm, N-Channel Power MOSFET
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O205AF
2N6782
2N6782
2N67
TB334
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2N6782 JANTX
Abstract: 2N6782
Text: 2N6782 Dimensions in mm inches . N-Channel MOSFET in a Hermetically sealed TO39 Metal Package. 8.64 (0.34) 9.40 (0.37) 8.01 (0.315) 9.01 (0.355) 4.06 (0.16) 4.57 (0.18) 12.70 (0.500) min. 0.89 max. (0.035) 0.41 (0.016) 0.53 (0.021) dia. N-Channel MOSFET.
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2N6782
O205AF)
11-Oct-02
2N6782 JANTX
2N6782
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2N6782
Abstract: TB334
Text: 2N6782 Data Sheet November 1998 3.5A, 100V, 0.600 Ohm, N-Channel Power MOSFET Features The 2N6782 is an N-Channel enhancement mode silicon gate power field effect transistor designed for applications such as switching regulators, switching converters, motor
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2N6782
2N6782
O-205AF
TB334
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2N6782
Abstract: No abstract text available
Text: 2N6782 MECHANICAL DATA Dimensions in mm inches N–CHANNEL POWER MOSFET ENHANCEMENT MODE 8.64 (0.34) 9.40 (0.37) 8.01 (0.315) 9.01 (0.355) 4.06 (0.16) 4.57 (0.18) 0.89 max. (0.035) 12.70 (0.500) min. APPLICATIONS 0.41 (0.016) 0.53 (0.021) dia. • FAST SWITCHING
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2N6782
O-205AF)
2N6782
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Untitled
Abstract: No abstract text available
Text: 2N6782 MECHANICAL DATA Dimensions in mm inches N–CHANNEL POWER MOSFET ENHANCEMENT MODE 8.64 (0.34) 9.40 (0.37) 8.01 (0.315) 9.01 (0.355) 4.06 (0.16) 4.57 (0.18) 0.89 max. (0.035) 12.70 (0.500) min. APPLICATIONS 0.41 (0.016) 0.53 (0.021) dia. • FAST SWITCHING
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2N6782
O-205AF)
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Untitled
Abstract: No abstract text available
Text: 2N6782 MECHANICAL DATA Dimensions in mm inches N–CHANNEL POWER MOSFET 8.89 (0.35) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) 4.19 (0.165) 4.95 (0.195) 0.89 max. (0.035) 12.70 (0.500) min. APPLICATIONS 0.41 (0.016) 0.53 (0.021) dia. • FAST SWITCHING • MOTOR CONTROLS
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2N6782
00A/ms
300ms,
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MOSFET 2N6782
Abstract: No abstract text available
Text: 2N6782 MECHANICAL DATA Dimensions in mm inches N–CHANNEL POWER MOSFET ENHANCEMENT MODE 8.64 (0.34) 9.40 (0.37) 8.01 (0.315) 9.01 (0.355) 4.06 (0.16) 4.57 (0.18) 0.89 max. (0.035) 12.70 (0.500) min. APPLICATIONS 0.41 (0.016) 0.53 (0.021) dia. • FAST SWITCHING
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2N6782
O-205AF)
2N6782-JQR"
2N6782-JQR-B
MOSFET 2N6782
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PDF
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Untitled
Abstract: No abstract text available
Text: 2N6782 MECHANICAL DATA Dimensions in mm inches N–CHANNEL POWER MOSFET ENHANCEMENT MODE 8.64 (0.34) 9.40 (0.37) 8.01 (0.315) 9.01 (0.355) 4.06 (0.16) 4.57 (0.18) 0.89 max. (0.035) 12.70 (0.500) min. APPLICATIONS 0.41 (0.016) 0.53 (0.021) dia. • FAST SWITCHING
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2N6782
O-205AF)
2N6782"
2N6782
2N6782-JQR-B
2N6782LCC4
2N6782LCC4-JQR-B
2N6782SMD
2N6782SMD-JQR-B
O276AB)
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PDF
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2N6782
Abstract: No abstract text available
Text: 2N6782 MECHANICAL DATA Dimensions in mm inches N–CHANNEL POWER MOSFET 8.89 (0.35) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) 4.19 (0.165) 4.95 (0.195) 0.89 max. (0.035) 12.70 (0.500) min. APPLICATIONS 7.75 (0.305) 8.51 (0.335) dia. • FAST SWITCHING • MOTOR CONTROLS
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2N6782
00A/ms
300ms,
2N6782
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PDF
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2N6782
Abstract: TB334
Text: 2N6782 Data Sheet November 1998 3.5A, 100V, 0.600 Ohm, N-Channel Power MOSFET • 3.5A, 100V • rDS ON = 0.600Ω • SOA is Power Dissipation Limited • Nanosecond Switching Speeds • Linear Transfer Characteristics • High Input Impedance • Majority Carrier Device
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2N6782
O-205AF
2N6782
TB334
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MOSFET
Abstract: 2N6782
Text: tSzimL-dondiLctoi iPioaucti, Una. 20 STERN-AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 2N6782 MECHANICAL DATA Dimensions in mm (inches) N-CHANNEL POWER MOSFET ENHANCEMENT MODE ?— * 3 1 4.06(0-16)
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2N6782
O-205AF)
300ns,
00A/u
MOSFET
2N6782
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2N6782LCC4
Abstract: IRFE110
Text: 2N6782LCC4 IRFE110 MECHANICAL DATA Dimensions in mm inches N–CHANNEL POWER MOSFET 9.14 (0.360) 8.64 (0.340) 1.27 (0.050) 1.07 (0.040) ≈ 2.16 (0.085) 12 13 14 15 16 1.39 (0.055) 1.02 (0.040) 7.62 (0.300) 7.12 (0.280) 11 17 10 18 9 1 8 2 VDSS ID(cont)
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2N6782LCC4
IRFE110
300ms,
2N6782LCC4
IRFE110
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74a diode
Abstract: No abstract text available
Text: 2N6782LCC4 MECHANICAL DATA Dimensions in mm inches N–CHANNEL POWER MOSFET 9.14 (0.360) 8.64 (0.340) 1.27 (0.050) 1.07 (0.040) ≈ 2.16 (0.085) 12 13 14 15 16 1.39 (0.055) 1.02 (0.040) 7.62 (0.300) 7.12 (0.280) 11 17 10 18 9 1 8 2 VDSS ID(cont) RDS(on)
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2N6782LCC4
00A/ms
300ms,
74a diode
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2N6786U
Abstract: No abstract text available
Text: 2N6782U, 2N6784U and 2N6786U Qualified Levels: JAN, JANTX, and JANTXV N-CHANNEL MOSFET compliant Qualified per MIL-PRF-19500/556 DESCRIPTION This family of 2N6782U, 2N6784U and 2N6786U switching transistors are military qualified up to the JANTXV level for high-reliability applications. These devices are also available in thru
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2N6782U,
2N6784U
2N6786U
MIL-PRF-19500/556
2N6786U
O-205AF
2N6782,
2N6784
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2N6782
Abstract: 2N6782U
Text: TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / 978 620-2600 / Fax: (978) 689-0803 Website: http: //www.microsemi.com N-CHANNEL MOSFET Qualified per MIL-PRF-19500/556 DEVICES LEVELS 2N6782 2N6782U JAN JANTX JANTXV ABSOLUTE MAXIMUM RATINGS (TC = +25°C unless otherwise noted)
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MIL-PRF-19500/556
2N6782
2N6782U
10Vdc,
50Vdc
T4-LDS-0064
2N6782
2N6782U
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2N6782LCC4
Abstract: MC 139 transistor mosfet 914
Text: 2N6782LCC4 MECHANICAL DATA Dimensions in mm inches N–CHANNEL POWER MOSFET 9.14 (0.360) 8.64 (0.340) 1.27 (0.050) 1.07 (0.040) ≈ 2.16 (0.085) 12 13 14 15 16 1.39 (0.055) 1.02 (0.040) 7.62 (0.300) 7.12 (0.280) 11 17 10 18 9 1 8 2 VDSS ID(cont) RDS(on)
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2N6782LCC4
00A/ms
300ms,
2N6782LCC4
MC 139 transistor
mosfet 914
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Untitled
Abstract: No abstract text available
Text: 2N6782LCC4 MECHANICAL DATA Dimensions in mm inches N–CHANNEL POWER MOSFET 9.14 (0.360) 8.64 (0.340) 1.27 (0.050) 1.07 (0.040) ≈ 2.16 (0.085) 12 13 14 15 16 1.39 (0.055) 1.02 (0.040) 7.62 (0.300) 7.12 (0.280) 11 17 10 18 9 1 8 2 VDSS ID(cont) RDS(on)
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2N6782LCC4
300ms,
2N6782LCC4-JQR"
2N6782LCC4-JQR-B
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PDF
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Untitled
Abstract: No abstract text available
Text: 2N6782+JANTXV Transistors N-Channel Enhancement MOSFET Military/High-RelY V BR DSS (V)100 V(BR)GSS (V)20 I(D) Max. (A)3.5 I(DM) Max. (A) Pulsed I(D) @Temp (øC) IDM Max (@25øC Amb) @Pulse Width (s) (Condition) Absolute Max. Power Diss. (W)15 Minimum Operating Temp (øC)
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2N6782
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Untitled
Abstract: No abstract text available
Text: 2N6782+JANTX Transistors N-Channel Enhancement MOSFET Military/High-RelY V BR DSS (V)100 V(BR)GSS (V)20 I(D) Max. (A)3.5 I(DM) Max. (A) Pulsed I(D) @Temp (øC) IDM Max (@25øC Amb) @Pulse Width (s) (Condition) Absolute Max. Power Diss. (W)15 Minimum Operating Temp (øC)
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2N6782
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2N6786
Abstract: 2n6782 2N6784 JANTX MOSFET 2N6782 2N6782 JANTX DD 127 D transistor 2N6782 equivalent
Text: 2N6782, 2N6784 and 2N6786 Qualified Levels: JAN, JANTX, and JANTXV N-CHANNEL MOSFET Available on commercial versions Qualified per MIL-PRF-19500/556 DESCRIPTION This family of 2N6782, 2N6784 and 2N6786 switching transistors are military qualified up to the JANTXV level for high-reliability applications. These devices are also available in a low
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2N6782,
2N6784
2N6786
MIL-PRF-19500/556
2N6786
2n6782
2N6784 JANTX
MOSFET 2N6782
2N6782 JANTX
DD 127 D transistor
2N6782 equivalent
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Q2N4401
Abstract: D1N3940 Q2N2907A D1N1190 Q2SC1815 Q2N3055 Q2N1132 D1N750 D02CZ10 D1N751
Text: Analog Parts Index Digital Mixed-Signal Device Type Index Click on a device type to jump to its page Actuator Fluid Level Detector Operational Amplifier Small-Signal Mosfet Amplifier/Equilizer Ground Fault Interrupter Opto-Isolator Switch Mulitplier Analog
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RD91EB
Q2N4401
D1N3940
Q2N2907A
D1N1190
Q2SC1815
Q2N3055
Q2N1132
D1N750
D02CZ10
D1N751
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mosfet cross reference
Abstract: pj 929 diode pj 1229 diode BSS250 VN0109N5 pj 66 diode pj 929 BSS295 "direct replacement" BSS295 "cross reference" pj 69 diode
Text: Selector Guides Selector Guides MOSFETs The Supertex enhancement-mode and depletion-mode MOSFET families utilize both vertical and lateral double diffused MOS processes. They feature low parasitic capacitances with interdigitated structures for high-frequency operation. Their low gate threshold voltage is
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T0-92
options4206A
ZVN4206C
ZVN4206E
ZVN4306A
TN2106K1
VN2210N3
TN0606N3
TN0606N6
mosfet cross reference
pj 929 diode
pj 1229 diode
BSS250
VN0109N5
pj 66 diode
pj 929
BSS295 "direct replacement"
BSS295 "cross reference"
pj 69 diode
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FT0015A
Abstract: 2N6782
Text: SFF110S.22 Solid State Devices, Inc. 14830 Valley View Blvd * La Mirada, CA 90638 Phone: 562 404-7855 * Fax: (562) 404-1773 ssdi@ssdi-power.com * www.ssdi-power.com 3.5 A /100 Volts / 0.6 Ω N-Channel MOSFET Transistor DESIGNER’S DATA SHEET Features:
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SFF110S
2N6782
MIL-PRF-19500
FT0015A
FT0015A
2N6782
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Untitled
Abstract: No abstract text available
Text: SFF110S.22 Solid State Devices, Inc. 14830 Valley View Blvd * La Mirada, CA 90638 Phone: 562 404-7855 * Fax: (562) 404-1773 ssdi@ssdi-power.com * www.ssdi-power.com 3.5 A /100 Volts / 0.6 Ω N-Channel MOSFET Transistor DESIGNER’S DATA SHEET Features:
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SFF110S
2N6782
MIL-PRF-19500
FT0015A
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