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    MOSFET 2N03 Search Results

    MOSFET 2N03 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    MG800FXF1JMS3 Toshiba Electronic Devices & Storage Corporation N-ch SiC MOSFET Module, 3300 V, 800 A, iXPLV, High-side: SiC SBD、Low-side: SiC MOSFET Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation
    XPJ1R004PB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 40 V, 160 A, 0.001 Ω@10V, S-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK4K1A60F Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 600 V, 2.0 A, 4.1 Ohm@10V, TO-220SIS Visit Toshiba Electronic Devices & Storage Corporation

    MOSFET 2N03 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    MOSFET 2n03

    Abstract: 2N03 ZXM62N03G ZXM62N03GTA ZXM62N03GTC 2N03 08
    Text: ZXM62N03G 30V N-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY V BR DSS = 30V: RDS(on) = 0.11 : ID = 4.7A DESCRIPTION This new generation of High Density MOSFETs from Zetex utilises a unique structure that combines the benefits of low on-resistance with fast switching


    Original     		PDF ZXM62N03G OT223 OT223 ZXM62N03GTA ZXM62N03GTC MOSFET 2n03 2N03 ZXM62N03G ZXM62N03GTA ZXM62N03GTC 2N03 08

    MOSFET 2n03

    Abstract: 2n03 ZXM62N03E6 ZXM62N03E6TA ZXM62N03E6TC
    Text: ZXM62N03E6 30V N-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY V BR DSS=30V; RDS(ON)=0.11⍀; ID=3.2A DESCRIPTION This new generation of high density MOSFETs from Zetex utilise a unique structure that combines the benefits of low on-resistance with fast switching


    Original     		PDF ZXM62N03E6 OT23-6 OT23-6 ZXM62N03E6T864-7630 MOSFET 2n03 2n03 ZXM62N03E6 ZXM62N03E6TA ZXM62N03E6TC

    MOSFET 2n03

    Abstract: 2N03 ZXM62N03E6 ZXM62N03E6TA ZXM62N03E6TC zxm6* sot23-6
    Text: ZXM62N03E6 30V N-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY V BR DSS=30V; RDS(ON)=0.11⍀; ID=3.2A DESCRIPTION This new generation of high density MOSFETs from Zetex utilise a unique structure that combines the benefits of low on-resistance with fast switching


    Original     		PDF ZXM62N03E6 OT23-6 OT23-6 ZXM62N03E6Telephone: MOSFET 2n03 2N03 ZXM62N03E6 ZXM62N03E6TA ZXM62N03E6TC zxm6* sot23-6

    Untitled

    Abstract: No abstract text available
    Text: ZXM62N03E6 30V N-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY V BR DSS=30V; RDS(ON)=0.11⍀; ID=3.2A DESCRIPTION This new generation of high density MOSFETs from Zetex utilise a unique structure that combines the benefits of low on-resistance with fast switching


    Original     		PDF ZXM62N03E6 OT23-6 OT23-6 ZXM62N03E6TA ZXM62N03E6TC

    MOSFET 2n03

    Abstract: 2N03 ZXM62N03E6 ZXM62N03E6TA ZXM62N03E6TC DSA003664 2N03 08
    Text: ZXM62N03E6 30V N-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY V BR DSS DSS=30V; RDS(ON)=0.11⍀; ID=3.2A DESCRIPTION This new generation of high density MOSFETs from Zetex utilise a unique structure that combines the benefits of low on-resistance with fast switching


    Original     		PDF ZXM62N03E6 OT23-6 OT23-6 ZXM62N03E6TA D-81673 MOSFET 2n03 2N03 ZXM62N03E6 ZXM62N03E6TA ZXM62N03E6TC DSA003664 2N03 08

    MOSFET 2n03

    Abstract: 2n03
    Text: Not Recommended for New Design Please Use ZXMN3A01E6TA ZXM62N03E6 30V N-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY V BR DSS=30V; RDS(ON)=0.11⍀; ID=3.2A DESCRIPTION This new generation of high density MOSFETs from Zetex utilise a unique structure that combines the benefits of low on-resistance with fast switching


    Original     		PDF ZXMN3A01E6TA ZXM62N03E6 OT23-6 OT23-6 ZXM62N03E6TA ZXM62N03E6TC MOSFET 2n03 2n03

    ET Mini smcc v2

    Abstract: sp8k10 AO4468 equivalent it851 hcl p38 CIRCUIT diagram SLG8XP5 CLEVO SD MOSFET DRIVE 4468 8 PIN SLG8XP c5855
    Text: Preface Notebook Computer D900F Service Manual Preface I Preface Notice The company reserves the right to revise this publication or to change its contents without notice. Information contained herein is for reference only and does not constitute a commitment on the part of the manufacturer or any subsequent vendor. They assume no responsibility or liability for any errors or inaccuracies that may appear in this publication nor are


    Original     		PDF D900F ICH10R G690L293T73 CV193 NCP5392MNR2G SC412A ISL6314CR 2N3904 ET Mini smcc v2 sp8k10 AO4468 equivalent it851 hcl p38 CIRCUIT diagram SLG8XP5 CLEVO SD MOSFET DRIVE 4468 8 PIN SLG8XP c5855

    RCA SK CROSS-REFERENCE

    Abstract: CD4003 2N2505 TF408 1N4465 250PA120 2N3017 pt 3570 trw rf pa189 Semicon volume 1
    Text: 1969 o < 00 x ic e uo <r\ *—4 rO O CM u J 'r < o o o CO r aJ. rfrr.~> y -< z X— < P“ -J Sem iconductor Annual At .0008" Dia. . . . there is no second source phire orifice insert. Tempress also created and supplied the tungsten carbide ultrasonic bonding tool and pioneered


    OCR Scan     		PDF