IRFM360
Abstract: No abstract text available
Text: PD - 90712B POWER MOSFET THRU-HOLE TO-254AA IRFM360 400V, N-CHANNEL HEXFET MOSFET TECHNOLOGY Product Summary Part Number RDS(on) ID IRFM360 0.20 Ω 23A HEXFET® MOSFET technology is the key to International Rectifier’s advanced line of power MOSFET transistors. The
|
Original
|
PDF
|
90712B
O-254AA)
IRFM360
O-254AA.
MIL-PRF-19500
IRFM360
|
9n90c
Abstract: 9n50c IGBT 20N50 kmb*050n60p 7N65C 5n50c smd diode S4 58a 2N60C 2N60 MOSFET SMPS str TV SMPS
Text: Power MOS -FET Selection Guide MOS-FET 2007. 2007. First First Version Version Http://www.kec.co.kr KEC-H Corp. Product classification First & Best First & Best MOSFET MOSFET SS-MOSFET MOSFET Trench TrenchMOSFET MOSFET Planar PlanarMOSFET MOSFET Pw Pw<<1W
|
Original
|
PDF
|
2N7000
2N7000A
2N7000K
70Max
45Max
55Max
80Max
9n90c
9n50c
IGBT 20N50
kmb*050n60p
7N65C
5n50c
smd diode S4 58a
2N60C
2N60 MOSFET SMPS
str TV SMPS
|
Untitled
Abstract: No abstract text available
Text: FDA20N50_F109 N-Channel UniFETTM MOSFET 500 V, 20 A, 230 m Features Description • RDS on = 230 m (Max.) @ VGS = 10 V, ID = 10 A UniFETTM MOSFET is Fairchild Semiconductor’s high voltage MOSFET family based on planar stripe and DMOS technology. This MOSFET is tailored to reduce on-state resistance, and to
|
Original
|
PDF
|
FDA20N50
|
FQA70N10
Abstract: No abstract text available
Text: FQA70N10 N-Channel QFET MOSFET 100 V, 70 A, 23 mΩ Description This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor ’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce
|
Original
|
PDF
|
FQA70N10
FQA70N10
|
FQA24N60
Abstract: No abstract text available
Text: FQA24N60 N-Channel QFET MOSFET 600 V, 23.5 A, 240 mΩ Description Features This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to
|
Original
|
PDF
|
FQA24N60
FQA24N60
|
UHC MOS
Abstract: No abstract text available
Text: FQP16N255 N-Channel QFET MOSFET 250 V, 16 A, 230 mΩ Description This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor ’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce
|
Original
|
PDF
|
FQP16N25
FQP16N255
UHC MOS
|
QS6M4
Abstract: No abstract text available
Text: QS6M4 QS6M4 Transistors 2.5V Drive Nch+Pch MOSFET QS6M4 zDimensions Unit : mm zStructure Silicon P-channel MOSFET Silicon N-channel MOSFET TSMT6 1.0MAX 2.9 1.9 0.95 0.95 zFeatures 1) The QS6M4 combines Pch MOSFET with a Nch MOSFET in a single TSMT6 package.
|
Original
|
PDF
|
|
fqpf70n10
Abstract: No abstract text available
Text: FQPF70N10 N-Channel QFET MOSFET 100 V, 35 A, 23 mΩ Features Description This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor®’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially
|
Original
|
PDF
|
FQPF70N10
FQPF70N10
|
FQA18N50AV2,18N50,AV218N50,FDA18N50
Abstract: 18N50
Text: UNISONIC TECHNOLOGIES CO., LTD 18N50 Power MOSFET 18A, 500V N-CHANNEL POWER MOSFET 1 TO-230 DESCRIPTION The UTC 18N50 is an N-channel enhancement mode power MOSFET using UTC’s advanced planar stripe and DMOS technology to provide perfect performance.
|
Original
|
PDF
|
18N50
O-230
18N50
O-220F1
O-220F2
O-220
QW-R502-477
FQA18N50AV2,18N50,AV218N50,FDA18N50
|
Untitled
Abstract: No abstract text available
Text: FQA24N60 N-Channel QFET MOSFET 600 V, 23.5 A, 240 mΩ Description Features This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to
|
Original
|
PDF
|
FQA24N60
|
Untitled
Abstract: No abstract text available
Text: FDD86326 N-Channel Shielded Gate PowerTrench MOSFET 80 V, 37 A, 23 m: Features General Description Shielded Gate MOSFET Technology This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced PowerTrench® process that incorporates Shielded Gate technology. This process has been
|
Original
|
PDF
|
FDD86326
|
Untitled
Abstract: No abstract text available
Text: FDA20N50_F109 N-Channel UniFETTM MOSFET 500 V, 20 A, 230 m Features Description • RDS on = 230 m (Max.) @ VGS = 10 V, ID = 10 A UniFETTM MOSFET is Fairchild Semiconductor ’s high voltage MOSFET family based on planar stripe and DMOS technology.
|
Original
|
PDF
|
FDA20N50
|
48V SMPS
Abstract: smps 10w 5V ISL6144 ISL6144IR ISL6144IV ISL6144IVZA MO-220 48vdc smps circuit diagram 48v smps led driver ISL6144IVZ
Text: ISL6144 Data Sheet March 23, 2006 FN9131.1 High Voltage ORing MOSFET Controller Features The ISL6144 ORing MOSFET Controller and a suitably sized N-channel power MOSFET s increases power distribution efficiency and availability when replacing a power ORing diode in high current applications.
|
Original
|
PDF
|
ISL6144
FN9131
ISL6144
48V SMPS
smps 10w 5V
ISL6144IR
ISL6144IV
ISL6144IVZA
MO-220
48vdc smps circuit diagram
48v smps led driver
ISL6144IVZ
|
FQA24N60
Abstract: No abstract text available
Text: FQA24N60 N-Channel QFET MOSFET 600 V, 23.5 A, 240 mΩ Description Features This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor®’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to
|
Original
|
PDF
|
FQA24N60
FQA24N60
|
|
|
Untitled
Abstract: No abstract text available
Text: FQP16N25 N-Channel QFET MOSFET 250 V, 16 A, 230 mΩ Description Features This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce
|
Original
|
PDF
|
FQP16N25
O-220
|
Untitled
Abstract: No abstract text available
Text: FQA70N10 N-Channel QFET MOSFET 100 V, 70 A, 23 mΩ Description Features This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce
|
Original
|
PDF
|
FQA70N10
|
FQP70N10
Abstract: No abstract text available
Text: FQP70N10 N-Channel QFET MOSFET 100 V, 57 A, 23 mΩ General Description Features This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor®’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to
|
Original
|
PDF
|
FQP70N10
FQP70N10
|
Untitled
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD UT23P09 Preliminary POWER MOSFET -23A, -100V P-CHANNEL POWER MOSFET DESCRIPTION The UTC UT23P09 is a P-channel Power MOSFET, it uses UTC’s advanced technology to provide the customers with high switching speed and a minimum on-state resistance.
|
Original
|
PDF
|
UT23P09
-100V
UT23P09
UT23P09L-TA3-T
UT23P09G-TA3-T
O-220
QW-R502-844
|
Untitled
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD 20N40 Preliminary Power MOSFET 400V, 23A N-CHANNEL POWER MOSFET DESCRIPTION The UTC 20N40 is an N-channel mode power MOSFET using UTC’s advanced technology to provide customers with planar stripe and DMOS technology. This technology allows a minimum on-state
|
Original
|
PDF
|
20N40
20N40
20N40L-T47-T
20N40Gat
QW-R502-623
|
Untitled
Abstract: No abstract text available
Text: FDA24N40F N-Channel UniFETTM FRFET MOSFET 400 V, 23 A, 190 mΩ Features Description • RDS on = 150 mΩ (Typ.) @ VGS = 10 V, ID = 11.5 A UniFETTM MOSFET is Fairchild Semiconductor’s high voltage MOSFET family based on planar stripe and DMOS technology.
|
Original
|
PDF
|
FDA24N40F
100nsec
200nsec
|
Untitled
Abstract: No abstract text available
Text: FDP20N50 / FDPF20N50 / FDPF20N50T N-Channel UniFETTM MOSFET 500 V, 20 A, 230 mΩ Features Description • RDS on = 200 mΩ (Typ.) @ VGS = 10 V, ID = 10 A UniFETTM MOSFET is Fairchild Semiconductor’s high voltage MOSFET family based on planar stripe and DMOS technology.
|
Original
|
PDF
|
FDP20N50
FDPF20N50
FDPF20N50T
|
MOSFET SOT-23 marking 122
Abstract: 122e mosfet marking 506
Text: UNISONIC TECHNOLOGIES CO., LTD UT7401 Power MOSFET 1.2A, 30V P-CHANNEL ENHANCEMENT MODE POWER MOSFET 3 3 2 1 2 SOT-23-3 The UTC UT7401 is P-channel enhancement mode power MOSFET, designed in serried ranks. With fast switching speed, low on-resistance, favorable stabilization.
|
Original
|
PDF
|
UT7401
OT-23-3
O-236)
OT-323
UT7401
OT-23
SC-59)
UT7401L-AE2-R
UT7401G-AE2-R
UT7401L-AE3-R
MOSFET SOT-23 marking 122
122e
mosfet marking 506
|
FDMC86102L
Abstract: No abstract text available
Text: FDMC86102L N-Channel Shielded Gate PowerTrench MOSFET 100 V, 18 A, 23 mΩ Features General Description Shielded Gate MOSFET Technology This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced PowerTrench® process that incorporates Shielded Gate technology. This process has been
|
Original
|
PDF
|
FDMC86102L
FDMC86102L
|
mosfet 400V
Abstract: 20n40
Text: UNISONIC TECHNOLOGIES CO., LTD 20N40 Preliminary Power MOSFET 400V, 23A N-CHANNEL POWER MOSFET DESCRIPTION The UTC 20N40 is an N-channel mode power MOSFET using UTC’s advanced technology to provide customers with planar stripe and DMOS technology. This technology allows a minimum on-state
|
Original
|
PDF
|
20N40
20N40
O-247
QW-R502-623
mosfet 400V
|
