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    MOSFET 1300 F2 Search Results

    MOSFET 1300 F2 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    XPN1300ANC Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 30 A, 0.0133 Ω@10V, TSON Advance(WF) Visit Toshiba Electronic Devices & Storage Corporation
    TCK424G Toshiba Electronic Devices & Storage Corporation MOSFET Gate Driver IC, 2.7 to 28 V, External MOSFET Gate drive / Inrush current reducing, WCSP6G Visit Toshiba Electronic Devices & Storage Corporation
    TCK425G Toshiba Electronic Devices & Storage Corporation MOSFET Gate Driver IC, 2.7 to 28 V, External MOSFET Gate drive / Inrush current reducing, WCSP6G Visit Toshiba Electronic Devices & Storage Corporation
    TCK423G Toshiba Electronic Devices & Storage Corporation MOSFET Gate Driver IC, 2.7 to 28 V, External MOSFET Gate drive / Inrush current reducing, WCSP6G Visit Toshiba Electronic Devices & Storage Corporation
    TCK422G Toshiba Electronic Devices & Storage Corporation MOSFET Gate Driver IC, 2.7 to 28 V, External MOSFET Gate drive / Inrush current reducing, WCSP6G Visit Toshiba Electronic Devices & Storage Corporation

    MOSFET 1300 F2 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    Photocathode S-25

    Abstract: No abstract text available
    Text: PR EL IM INA RY EB-CCD TV SCAN RATE TYPE : N7640 SLOW SCAN TYPE : N7220 For Low-Light-Level Imaging with high S/N ratio IMAGING COMPARISON Using Resolution Test Chart • Imaging Conditions Object illuminance: 0.1 lx Lens: FUJINON-TV Zoo-m Lens/H6x 12.5R :F1.2/f2


    Original     		N7640 N7220 TAPPB0068EA SE-171-41 TAPP1032E01 Photocathode S-25 PDF

    F1 J37

    Abstract: C14A AGR26125E AGR26125EF AGR26125EU C13B JESD22-C101A 2595MHz
    Text: AGR26125E 125 W, 2.5 GHz—2.7 GHz, N-Channel E-Mode, Lateral MOSFET Introduction Table 1. Thermal Characteristics The AGR26125E is a high-voltage, gold-metalized, enhancement mode, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for ultrahigh-frequency (UHF) applications


    Original     		AGR26125E AGR26125E AGR26125EU AGR26125EF F1 J37 C14A AGR26125EF AGR26125EU C13B JESD22-C101A 2595MHz PDF

    FUJINON-TV Zoom

    Abstract: FUJINON-TV Zoom Lens/H6x 12.5R fujinon ccd diode datasheet N7640 conditioning circuits for window TV on/off sensor mark ccd N7220 RS-170 2n7640
    Text: PR EL IM INA RY EB-CCD TV SCAN RATE TYPE : N7640 SLOW SCAN TYPE : N7220 For Low-Light-Level Imaging with high S/N ratio IMAGING COMPARISON Using Resolution Test Chart • Imaging Conditions Object illuminance: 0.1 lx Lens: FUJINON-TV Zoom Lens/H6x 12.5R :F1.2/f2


    Original     		N7640 N7220 TAPPB0068EA SE-171-41 TAPP1032E01 FUJINON-TV Zoom FUJINON-TV Zoom Lens/H6x 12.5R fujinon ccd diode datasheet N7640 conditioning circuits for window TV on/off sensor mark ccd N7220 RS-170 2n7640 PDF

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA Order this document by MRF19125/D SEMICONDUCTOR TECHNICAL DATA The RF Sub - Micron MOSFET Line RF Power Field Effect Transistor MRF19125R3 N - Channel Enhancement - Mode Lateral MOSFET Designed for PCN and PCS base station applications with frequencies from


    Original     		MRF19125/D MRF19125R3 MRF19125/D PDF

    MOSFET 1300 F2

    Abstract: 465B AN1955 CDR33BX104AKWS MRF19125 MRF19125R3 3052 mosfet
    Text: MOTOROLA Freescale Semiconductor, Inc. Order this document by MRF19125/D SEMICONDUCTOR TECHNICAL DATA The RF Sub - Micron MOSFET Line RF Power Field Effect Transistor MRF19125R3 Freescale Semiconductor, Inc. N - Channel Enhancement - Mode Lateral MOSFET


    Original     		MRF19125/D MRF19125R3 MOSFET 1300 F2 465B AN1955 CDR33BX104AKWS MRF19125 MRF19125R3 3052 mosfet PDF

    c7a series vishay capacitor

    Abstract: F1 J37 C14A AGR26125E AGR26125EF AGR26125EU C13B JESD22-C101A taconic vitramon CAPACITOR
    Text: AGR26125E 125 W, 2.5 GHz—2.7 GHz, N-Channel E-Mode, Lateral MOSFET Introduction Table 1. Thermal Characteristics The AGR26125E is a high-voltage, gold-metalized, enhancement mode, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for ultrahigh-frequency (UHF) applications


    Original     		AGR26125E AGR26125E AGR26125EU AGR26125EF c7a series vishay capacitor F1 J37 C14A AGR26125EF AGR26125EU C13B JESD22-C101A taconic vitramon CAPACITOR PDF

    F1 J37

    Abstract: C14A AGR26125E AGR26125EF AGR26125EU C13B JESD22-C101A 2595MHz
    Text: Preliminary Data Sheet August 2004 AGR26125E 125 W, 2.5 GHz—2.7 GHz, N-Channel E-Mode, Lateral MOSFET Introduction Table 1. Thermal Characteristics The AGR26125E is a high-voltage, gold-metalized, enhancement mode, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for ultrahigh-frequency (UHF) applications


    Original     		AGR26125E AGR26125E AGR26125EF AGR26125EU DS04-111RFPP F1 J37 C14A AGR26125EF AGR26125EU C13B JESD22-C101A 2595MHz PDF

    Untitled

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: MRF19125 Rev. 7, 10/2008 RF Power Field Effect Transistor MRF19125SR3 Designed for PCN and PCS base station applications with frequencies from 1900 to 2000 MHz. Suitable for TDMA, CDMA and multicarrier amplifier


    Original     		MRF19125 MRF19125SR3 MRF19125 PDF

    Untitled

    Abstract: No abstract text available
    Text: Document Number: MRF19125 Rev. 8, 10/2008 Freescale Semiconductor Technical Data RF Power Field Effect Transistor MRF19125R3 Designed for PCN and PCS base station applications with frequencies from 1900 to 2000 MHz. Suitable for TDMA, CDMA and multicarrier amplifier


    Original     		MRF19125 MRF19125R3 PDF

    MOSFET 1300 F2

    Abstract: 100B100JCA500X 465B CDR33BX104AKWS MRF19125 MRF19125R3
    Text: Freescale Semiconductor Technical Data Document Number: MRF19125 Rev. 8, 10/2008 RF Power Field Effect Transistor MRF19125R3 Designed for PCN and PCS base station applications with frequencies from 1900 to 2000 MHz. Suitable for TDMA, CDMA and multicarrier amplifier


    Original     		MRF19125 MRF19125R3 MOSFET 1300 F2 100B100JCA500X 465B CDR33BX104AKWS MRF19125 MRF19125R3 PDF

    232273461009L

    Abstract: transistor mosfet J306 ATC100B2R0BT500X j327 transistor Transistor J182 232273461009 ATC100B470 ATC100B1R2BT500XT j349 AN1955
    Text: Freescale Semiconductor Technical Data Document Number: MRF8S9202N Rev. 0, 12/2010 RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET MRF8S9202NR3 Designed for CDMA base station applications with frequencies from 920 to 960 MHz. Can be used in Class AB and Class C for all typical cellular base


    Original     		MRF8S9202N MRF8S9202NR3 232273461009L transistor mosfet J306 ATC100B2R0BT500X j327 transistor Transistor J182 232273461009 ATC100B470 ATC100B1R2BT500XT j349 AN1955 PDF

    mmds

    Abstract: AGR26180EF J500 JESD22-C101A
    Text: Preliminary Data Sheet May 2004 AGR26180EF 180 W, 2.535 GHz—2.655 GHz, N-Channel E-Mode, Lateral MOSFET Introduction The AGR26180EF is a high-voltage, gold-metalized, enhancement mode, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for ultrahigh-frequency (UHF) applications,


    Original     		AGR26180EF AGR26180EF AGR19K180U AGR26180XF 12-digit mmds J500 JESD22-C101A PDF

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Sub–Micron MOSFET Line MRF19125 MRF19125S MRF19125SR3 RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for PCN and PCS base station applications with frequencies from 1.9 to 2. 0 G Hz . S u i ta b l e fo r T D M A, C D M A a n d mul ti c arri er ampl i fi er


    Original     		MRF19125 MRF19125S MRF19125SR3 PDF

    52521

    Abstract: No abstract text available
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Sub–Micron MOSFET Line MRF19125 MRF19125S RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for PCN and PCS base station applications at frequencies from 1.9 to 2. 0 G Hz . S u i ta b l e fo r T D MA , C D M A a n d mul ti c arri er ampl i fi er


    Original     		MRF19125 MRF19125S 52521 PDF

    AGR26180EF

    Abstract: J500 JESD22-C101A j78 transistor j78 transistor equivalent
    Text: Preliminary Data Sheet May 2004 AGR26180EF 180 W, 2.535 GHz—2.655 GHz, N-Channel E-Mode, Lateral MOSFET Introduction The AGR26180EF is a high-voltage, gold-metalized, enhancement mode, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for ultrahigh-frequency (UHF) applications,


    Original     		AGR26180EF AGR26180EF DS04-112RFPP J500 JESD22-C101A j78 transistor j78 transistor equivalent PDF

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MRF5S21150 RF Power Field Effect Transistors MRF5S21150R3 N–Channel Enhancement–Mode Lateral MOSFETs MRF5S21150S Designed for W–CDMA base station applications with frequencies from 2110 MRF5S21150SR3 to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applicaThe RF MOSFET Line


    Original     		MRF5S21150 MRF5S21150R3 MRF5S21150S MRF5S21150SR3 150R3 PDF

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA Available at: Available at http://www.motorola.com/rf, Go to Tools SEMICONDUCTOR TECHNICAL DATA RF Reference Design Library The RF Sub–Micron MOSFET Line RF Power Field-Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs DEVICE CHARACTERISTICS From Device Data Sheet


    Original     		MRF5S21150 MRF5S21150R3 MRF5S21150S MRF5S21150SR3 RDMRF5S21150UMTS PDF

    100B100JCA500X

    Abstract: 465B CDR33BX104AKWS MRF19125 MRF19125S
    Text: MOTOROLA Order this document by MRF19125/D SEMICONDUCTOR TECHNICAL DATA The RF Sub–Micron MOSFET Line MRF19125 MRF19125S RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for PCN and PCS base station applications at frequencies from


    Original     		MRF19125/D MRF19125 MRF19125S MRF19125 100B100JCA500X 465B CDR33BX104AKWS MRF19125S PDF

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA Freescale Semiconductor, Inc. Available at: Available at http://www.motorola.com/rf, Go to Tools SEMICONDUCTOR TECHNICAL DATA RF Reference Design Library The RF Sub–Micron MOSFET Line RF Power Field-Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs


    Original     		MRF5S21150 MRF5S21150R3 MRF5S21150S MRF5S21150SR3 RDMRF5S21150UMTS PDF

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Available at: http://www.motorola.com/rf/ Tools RF Reference Design Library The RF MOSFET Line RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for W–CDMA base station applications at frequencies from 2110


    Original     		MRF21125 RDMRF21125WCDMA PDF

    465B

    Abstract: CDR33BX104AKWS MRF19125 MRF19125S MRF19125SR3
    Text: MOTOROLA Order this document by MRF19125/D SEMICONDUCTOR TECHNICAL DATA The RF Sub–Micron MOSFET Line MRF19125 MRF19125S MRF19125SR3 RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for PCN and PCS base station applications with frequencies from


    Original     		MRF19125/D MRF19125 MRF19125S MRF19125SR3 MRF19125 MRF19125S 465B CDR33BX104AKWS MRF19125SR3 PDF

    RF POWER VERTICAL MOSFET 1000 w

    Abstract: AK 3913
    Text: POLYFET R F DEVICES M7E t • 7211G01 ODGÜ1D1 1 ■ PLYF T - 39-12 POLYFET RF DEVICES F2043 PATENTED GOLD METALLIZED SILICON RF POWER MOSFET General Description Silicon vertical DMOS designed specifically for RF applications. Immune to forward and reverse


    OCR Scan     		GG001D1 T-39-13 F2043 RF POWER VERTICAL MOSFET 1000 w AK 3913 PDF

    T-39W F2044

    Abstract: RF POWER VERTICAL MOSFET 1000 w
    Text: POLYFET R F DEVICES 4?E D MÊ 7 5 4 1 0 0 1 0 0 0 0 1 0 5 t. • PLYF T - 3 9 -/ / POLYFET RF DEVICES F2044 PATENTED GOLD METALLIZED SILICON RF POWER MOSFET General Description Silicon vertical DMOS designed specifically for RF applications. Immune to forward and reverse


    OCR Scan     		7541GGtà T-39W F2044 -65ICS T-39W F2044 RF POWER VERTICAL MOSFET 1000 w PDF

    Untitled

    Abstract: No abstract text available
    Text: FU JI 2SK2687-01 N-channel MOS-FET S iL lM s u lt ìU e FAP-IIIB Series 30V > Features - o,oin 50A 60W > Outline Drawing High Current Low On-Resistance No Secondary Breakdown Low Driving Power Avalanche Rated > Applications - Motor Control - General Purpose Power Amplifier


    OCR Scan     		2SK2687-01 277Typical PDF