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    MOSFET 120N03LS Search Results

    MOSFET 120N03LS Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TCK424G
    		Toshiba Electronic Devices & Storage Corporation MOSFET Gate Driver IC, 2.7 to 28 V, External MOSFET Gate drive / Inrush current reducing, WCSP6G Visit Toshiba Electronic Devices & Storage Corporation
    TCK425G
    		Toshiba Electronic Devices & Storage Corporation MOSFET Gate Driver IC, 2.7 to 28 V, External MOSFET Gate drive / Inrush current reducing, WCSP6G Visit Toshiba Electronic Devices & Storage Corporation
    TCK423G
    		Toshiba Electronic Devices & Storage Corporation MOSFET Gate Driver IC, 2.7 to 28 V, External MOSFET Gate drive / Inrush current reducing, WCSP6G Visit Toshiba Electronic Devices & Storage Corporation
    TCK420G
    		Toshiba Electronic Devices & Storage Corporation MOSFET Gate Driver IC, 2.7 to 28 V, External MOSFET Gate drive / Inrush current reducing, WCSP6G Visit Toshiba Electronic Devices & Storage Corporation
    TCK422G
    		Toshiba Electronic Devices & Storage Corporation MOSFET Gate Driver IC, 2.7 to 28 V, External MOSFET Gate drive / Inrush current reducing, WCSP6G Visit Toshiba Electronic Devices & Storage Corporation

    MOSFET 120N03LS Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    120n03ls

    Abstract: 120n03 Mosfet 120n03ls
    Contextual Info: BSC120N03LS G OptiMOS 3 Power-MOSFET Product Summary Features • Fast switching MOSFET for SMPS • Optimized technology for DC/DC converters VDS 30 V RDS on ,max 12 mW ID 39 A • Qualified according to JEDEC1) for target applications PG-TDSON-8 • N-channel; Logic level


    Original     		BSC120N03LS IEC61249-2-21 120N03LS 120n03ls 120n03 Mosfet 120n03ls PDF

    120n03ls

    Abstract: Mosfet 120n03ls BSC120N03LS JESD22 BSC120N03LS G
    Contextual Info: BSC120N03LS G OptiMOS 3 Power-MOSFET Product Summary Features • Fast switching MOSFET for SMPS • Optimized technology for DC/DC converters V DS 30 V R DS on ,max 12 mΩ ID 39 A 1) • Qualified according to JEDEC for target applications • N-channel


    Original     		BSC120N03LS 120N03LS 120n03ls Mosfet 120n03ls JESD22 BSC120N03LS G PDF

    Mosfet 120n03ls

    Abstract: 120N03LS 120n03 BSC120N03LS JESD22 BSC120N03LS G
    Contextual Info: BSC120N03LS G OptiMOS 3 Power-MOSFET Product Summary Features • Fast switching MOSFET for SMPS • Optimized technology for DC/DC converters V DS 30 V R DS on ,max 12 mΩ ID 39 A 1) • Qualified according to JEDEC for target applications • N-channel


    Original     		BSC120N03LS 120N03LS Mosfet 120n03ls 120N03LS 120n03 JESD22 BSC120N03LS G PDF

    Mosfet 120n03ls

    Abstract: 120N03LS 120n03 BSC120N03LS IEC61249-2-21 JESD22 PG-TDSON-8
    Contextual Info: BSC120N03LS G OptiMOS 3 Power-MOSFET Product Summary Features V DS 30 V • Fast switching MOSFET for SMPS R DS on ,max 12 mΩ • Optimized technology for DC/DC converters ID 39 A • Qualified according to JEDEC1) for target applications PG-TDSON-8 • N-channel; Logic level


    Original     		BSC120N03LS IEC61249-2-21 120N03LS Mosfet 120n03ls 120N03LS 120n03 IEC61249-2-21 JESD22 PG-TDSON-8 PDF

    Mosfet 120n03ls

    Abstract: 120n03ls
    Contextual Info: BSC120N03LS G OptiMOS 3 Power-Transistor Product Summary Features V DS • Fast switching MOSFET for SMPS 30 R DS on ,max • Optimized technology for DC/DC converters 12.0 ID 39 V mΩ A 1) • Qualified according to JEDEC for target applications • N-channel


    Original     		BSC120N03LS 120N03LS Mosfet 120n03ls 120n03ls PDF