MOSFET 1200V 6A Search Results

MOSFET 1200V 6A Result Highlights (5)

Part	Manufacturer	Description
MG800FXF1JMS3	Toshiba Electronic Devices & Storage Corporation	N-ch SiC MOSFET Module, 3300 V, 800 A, iXPLV, High-side: SiC SBD、Low-side: SiC MOSFET
TK190U65Z	Toshiba Electronic Devices & Storage Corporation	MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL
TK7R0E08QM	Toshiba Electronic Devices & Storage Corporation	MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB
XPJ1R004PB	Toshiba Electronic Devices & Storage Corporation	N-ch MOSFET, 40 V, 160 A, 0.001 Ω@10V, S-TOGL
TK4K1A60F	Toshiba Electronic Devices & Storage Corporation	MOSFET, N-ch, 600 V, 2.0 A, 4.1 Ohm@10V, TO-220SIS

MOSFET 1200V 6A Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
Untitled Abstract: No abstract text available Text: Advance Technical Information IXFA6N120P IXFP6N120P IXFH6N120P PolarTM HiPerFETTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode VDSS ID25 = 1200V = 6A ≤ 2.4Ω Ω RDS on TO-263 AA (IXFA) G S D (Tab) Symbol Test Conditions VDSS	Original	IXFA6N120P IXFP6N120P IXFH6N120P O-263 O-220AB 6N120P	PDF
IXFA6N120P Abstract: IXFH6N120P IXFH6N120 IXFP6N120P Text: Preliminary Technical Information IXFA6N120P IXFP6N120P IXFH6N120P PolarTM HiPerFETTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode VDSS ID25 = 1200V = 6A ≤ 2.75Ω Ω RDS on TO-263 AA (IXFA) G S D (Tab) Symbol Test Conditions	Original	IXFA6N120P IXFP6N120P IXFH6N120P O-263 O-220AB O-247 6N120P IXFH6N120P IXFH6N120	PDF
HiperFET Abstract: MOSFET 1200v 3a IXFA6N120P Text: Advance Technical Information IXFA6N120P IXFP6N120P IXFH6N120P PolarTM HiPerFETTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode VDSS ID25 = 1200V = 6A ≤ 2.4Ω Ω RDS on TO-263 AA (IXFA) G S D (Tab) Symbol Test Conditions	Original	IXFA6N120P IXFP6N120P IXFH6N120P O-263 O-220AB 6N120P HiperFET MOSFET 1200v 3a IXFA6N120P	PDF
Untitled Abstract: No abstract text available Text: Preliminary Technical Information PolarTM HiPerFETTM Power MOSFET VDSS ID25 IXFA6N120P IXFP6N120P IXFH6N120P N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode = 1200V = 6A Ω ≤ 2.75Ω RDS on TO-263 AA (IXFA) G S D (Tab) Symbol Test Conditions	Original	IXFA6N120P IXFP6N120P IXFH6N120P O-263 6N120P	PDF
Untitled Abstract: No abstract text available Text: PolarTM Power MOSFET HiPerFETTM VDSS ID25 IXFH12N120P IXFV12N120P IXFV12N120PS RDS on trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode = = ≤ ≤ 1200V 12A Ω 1.35Ω 300ns PLUS220 (IXFV) G D Symbol Test Conditions Maximum Ratings VDSS	Original	IXFH12N120P IXFV12N120P IXFV12N120PS 300ns PLUS220 12N120P 4-01-08-A	PDF
Untitled Abstract: No abstract text available Text: Preliminary Technical Information PolarTM Power MOSFET HiPerFETTM IXFH12N120P IXFV12N120P IXFV12N120PS VDSS ID25 RDS on trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode = = ≤ ≤ 1200V 12A Ω 1.35Ω 300ns PLUS220 (IXFV) G D Symbol Test Conditions	Original	IXFH12N120P IXFV12N120P IXFV12N120PS 300ns PLUS220 12N120P	PDF
IXFH12N120P Abstract: 12N120P iXfh12n120 PLUS220SMD Text: PolarTM Power MOSFET HiPerFETTM N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode IXFH12N120P IXFV12N120P IXFV12N120PS VDSS ID25 RDS on trr = = ≤ ≤ 1200V 12A Ω 1.35Ω 300ns PLUS220 (IXFV) G D Symbol Test Conditions Maximum Ratings VDSS	Original	IXFH12N120P IXFV12N120P IXFV12N120PS 300ns PLUS220 12N120P 4-01-08-A IXFH12N120P iXfh12n120 PLUS220SMD	PDF
Untitled Abstract: No abstract text available Text: SCT2450KE N-channel SiC power MOSFET Datasheet lOutline VDSS 1200V RDS on (Typ.) 450mW ID 10A PD 85W TO-247 (1) (2) (3) lInner circuit lFeatures (1) Gate (2) Drain (3) Source 1) Low on-resistance 2) Fast switching speed 3) Fast reverse recovery *1 Body Diode	Original	SCT2450KE 450mW O-247 R1102B	PDF
Untitled Abstract: No abstract text available Text: S2305 Data Sheet N-channel SiC power MOSFET bare die VDSS 1200V RDS on (Typ.) 450mW ID 10A1 lFeatures lInner circuit (D) 1) Low on-resistance (G) Gate (D) Drain (S) Source 2) Fast switching speed 3) Fast reverse recovery (G) 4) Easy to parallel 1 Body Diode	Original	S2305 450mW R1102B	PDF
Untitled Abstract: No abstract text available Text: SCT2450KE Datasheet N-channel SiC power MOSFET Outline VDSS 1200V RDS on (Typ.) 450m ID 10A PD 85W TO-247 (1) (2) (3) Inner circuit (2) Features (1) Gate (2) Drain (3) Source 1) Low on-resistance 2) Fast switching speed *1 (1) 3) Fast reverse recovery	Original	SCT2450KE O-247 R1102B	PDF
600v 20 amp mosfet Abstract: Ultrafast MOSFET Driver 10 AMP 1200V RECTIFIER DIODE IXCP10M45S DSEI30-10A 14 Amp Low-Side Ultrafast MOSFET Driver IXDI404PI-ND 200 Amp bridge mosfet IXCP10M45S-ND DSEI12-12A Text: Fig. 1 Fig. 2 Fig. 1a 30.00 Fig. 3 Ø0.8 Fig. 1b 8.2 Semiconductors 76 91.95 A 5.33 TO-240AA TO-220AC Fig. 6 Fig. 5 Fig. 4 16.26 Fig. 6a S1 16.26 21.46 C C C A A D 38.23 C C A TO-247AD 93 21 22 32 D11 D13 D15 20.5 17 2 TAB S Fig. 9 16.26 21.46 S S TO-227B miniBLOC	Original	O-240AA O-220AC O-247AD O-227B DSEI20-12A-ND DSEI8-06A DSEI12-06A DSEI12-10A DSEI12-12A 600v 20 amp mosfet Ultrafast MOSFET Driver 10 AMP 1200V RECTIFIER DIODE IXCP10M45S DSEI30-10A 14 Amp Low-Side Ultrafast MOSFET Driver IXDI404PI-ND 200 Amp bridge mosfet IXCP10M45S-ND DSEI12-12A	PDF
IRU1239SC Abstract: iru1239 Full-bridge IR2110 Class-D ir2010 PWM IR2112 IRF540 ir21065 full bridge ir2110 h-bridge irfz44n IRVCM10A 600V 300A igbt dc to dc boost converter Text: SHENZHEN SHOUHE TECHNOLOGY CO., LTD. TEL: 0755-8380 8450 FAX: 0755-8380 8425 Part Information PartNo Function Line Pkg 100MT160PAPBF Discrete IRCI Module MTP 100MT160PA Discrete IRCI Module MTP 100MT160PBPBF Discrete IRCI Module MTP IRCI Module MTP IRCI Module MTK	Original	100MT160PAPBF 100MT160PA 100MT160PBPBF IRU1239SC iru1239 Full-bridge IR2110 Class-D ir2010 PWM IR2112 IRF540 ir21065 full bridge ir2110 h-bridge irfz44n IRVCM10A 600V 300A igbt dc to dc boost converter	PDF
Untitled Abstract: No abstract text available Text: SSR3A High Speed 3 Amp Solid-State Relay Key Features • •   6 ns Switching Speed 0 to 5 MHz input frequency 60 ns minimum pulse width Power and signal inputs isolated from sources.  Easy replacement of IGBTs NO Resoldering Necessary! Figure 1 - SSR3A Simplified Circuit Diagram	Original		PDF
95A sensor hall Abstract: celduc d31c2110 d31c2110 sensor hall 95A HALL 95A D41A3100L 95A magnetic sensor IGBT ac switch in SSR swt kw 11 7 1 16a 250vac ac SYNCHRONOUS MOTOR WIRING Text: Selection Guide REED RELAYS AND SWITCHES MAGNETIC SENSORS SOLID STATE RELAYS IV E ED We are pleased to present the third version of our short form catalogue. The last 3 years have seen a dramatic growth in customers in a diverse range of industries, allowing us to demonstrate high quality, innovative design techniques incorporated in many of the new products shown in this catalogue.	Original		PDF

mosfet 1200V 40A Abstract: Silicon MOSFET 1000V mosfet 1500v igbt testing pnp 1000V 2A IGBT Transistor 1200V, 25A MOSFET 1200v 3a igbt 20A 1200v pnp 1200V 2A 40N160 Text: IXBH40N160 BiMOSFETTM Developed for High Voltage, High Frequency Applications Ralph E. Locher IXYS Corporation Santa Clara, CA by Olaf Zschieschang IXYS Semiconductor GmbH Lampertheim, Germany ABSTRACT In the IXBH40N160, IXYS has developed an extremely fast, homogeneous base IGBT by the	Original	IXBH40N160 IXBH40N160, 200ns. mosfet 1200V 40A Silicon MOSFET 1000V mosfet 1500v igbt testing pnp 1000V 2A IGBT Transistor 1200V, 25A MOSFET 1200v 3a igbt 20A 1200v pnp 1200V 2A 40N160	PDF
IXAN0016 Abstract: pnp transistor 1000v pnp 1200V 2A snubber CIRCUITS mosfet Silicon MOSFET 1000V mosfet 1000v MOSFET 1200v 3a mosfet 1500v 35N120A mosfet 1200V 40A Text: IXAN0016 IXBH40N160 BiMOSFETTM Developed for High Voltage, High Frequency Applications Ralph E. Locher IXYS Corporation Santa Clara, CA by Olaf Zschieschang IXYS Semiconductor GmbH Lampertheim, Germany ABSTRACT In the IXBH40N160, IXYS has developed an extremely fast, homogeneous base IGBT by the	Original	IXAN0016 IXBH40N160 IXBH40N160, 200ns. IXAN0016 pnp transistor 1000v pnp 1200V 2A snubber CIRCUITS mosfet Silicon MOSFET 1000V mosfet 1000v MOSFET 1200v 3a mosfet 1500v 35N120A mosfet 1200V 40A	PDF
SCS205KG Abstract: SCS220KE2 SCS240KE2 SCS212AJ SCS230KE2 SCS210AJ Text: SiC Power Devices vol.3 The Industry's First Mass-Produced "Full SiC" Power Modules ROHM now oﬀers SiC power devices featuring a number of characteristics, including: high breakdown voltage, low power consumption, and high-speed switching operation not provided by conventional silicon devices.	Original	000A-class) 56P6733E 1500SG SCS205KG SCS220KE2 SCS240KE2 SCS212AJ SCS230KE2 SCS210AJ	PDF
half bridge converter 2kw Abstract: 5kw 20khz diagram induction heating 66a hall sensor TLE4209A XMC4700 ISO26262 1ED020112f TLE7183QU TLE5009 btm7752 Text: Efficient Semiconductor Solutions for Motor Control and Drives www.infineon.com/motorcontrol Contents Solutions for Motor Control and Drives 04 Low-Voltage Applications 06 High-Voltage Applications 08 Product Families 10 Microcontrollers 10 Low-Voltage Products	Original		PDF
Electric Welding Machine diagram Abstract: SWITCHING WELDING SCHEMATIC BY MOSFET welding machine diagram IGBT SCHEMATIC MOSFET FOR 100khz SWITCHING APPLICATIONS schematic welding machine igbt welding SWITCHING WELDING BY MOSFET igbt SKW30N60HS Text: High Speed 600V IGBT for fast switching Applications S. Cordes, H. Preis, L. Lorenz Infineon Technologies AG St.-Martinstr. 76 81541 München Introduction : The key component for power Electronic applications – the power switch - is still a semiconductor	Original	10kHz O-247 TC100 O-220 SGP02N60HS SGP04N60HS SGP06N60HS SGP20N60HS SGW20N60HS SGP30N60HS Electric Welding Machine diagram SWITCHING WELDING SCHEMATIC BY MOSFET welding machine diagram IGBT SCHEMATIC MOSFET FOR 100khz SWITCHING APPLICATIONS schematic welding machine igbt welding SWITCHING WELDING BY MOSFET igbt SKW30N60HS	PDF
mosfet 1200V 40A Abstract: igbt 20A 1200v Igbts guide mosfet 1200V 30a smps HGTG11N120CND MOSFET 1200v 30a HGTD3N60A4S HGTP20N60A4 igbt 1200V 60A HGTD3N60B3S Text: LC-96585.5 2-sided r2 8/24/00 7:22 PM Page 1 HOLE PUNCH THIS EDGE www.intersil.com Industrial IGBT family features a range of 600V Punch Through And 1200V Non Punch Through NPT . Solutions and Support 600V IGBT SELECTION GUIDE PACKAGE USABLE CURRENT TO-252AA	Original	LC-96585 O-252AA HGTD3N60A4S O-220AB O-263AB O-247 O-264AA O-268AA HGTD3N60C3S HGT1S3N60A4S* mosfet 1200V 40A igbt 20A 1200v Igbts guide mosfet 1200V 30a smps HGTG11N120CND MOSFET 1200v 30a HGTD3N60A4S HGTP20N60A4 igbt 1200V 60A HGTD3N60B3S	PDF
600V igbt dc to dc buck converter Abstract: diode 8a 600v FAN4803 24v output power supply 300khz 600V mosfet driver IC 600v 20 amp mosfet FQPF9N50C equivalent FQPF10N60C equivalent circuit diagram of mosfet based smps power supply FQP9N50C FDS4935 equivalent Text: Highly Integrated Off-Line Power Switch 1 The FS6X1220RT Fairchild Power Switch FPS is a highly integrated offline power switch for DC/DC forward or fly-back power supply applications. This device integrates a fully avalanche-rated SenseFET (200V minimum	Original	FS6X1220RT FSAT66 FDC796N/FDC3616N FDZ299P FXL34 Power247TM, 600V igbt dc to dc buck converter diode 8a 600v FAN4803 24v output power supply 300khz 600V mosfet driver IC 600v 20 amp mosfet FQPF9N50C equivalent FQPF10N60C equivalent circuit diagram of mosfet based smps power supply FQP9N50C FDS4935 equivalent	PDF
igbt welding machine scheme Abstract: ikw40n120h3 aircon l1 smd diode schottky code marking SJ transistor marking code 12W SOT-23 24V application with ice3ar0680jz induction cooker FAULT FINDING IPW65R041 IGW40N60H3 SPW55N80C3 Text: Power Management Selection Guide 2012 [ www.infineon.com/powermanagement ] [ www.infineon.com/PowerManagementICs ] We create Power Management We live Energy Efficiency Infineon, an innovation leader for Power Semiconductor and Energy Efficiency technologies is continually developing and	Original		PDF
MOSFET 1200v 30a Abstract: Rad hard for Harris 32v smps RHRU100120 RHRG3060c harris mur1520 MUR820 RURD420 RURP820C Text: 41892.6 - FO-011 SELECTION 11/19/98 10:57 AM Page 1 Harris Semiconductor-An Industry Leader Harris Semiconductor comprises one sector of Harris Product Line Selection Corporation, an international communications and electronics For More Information: Harris On-Line Services:	Original	FO-011 1-800-4-HARRIS MOSFET 1200v 30a Rad hard for Harris 32v smps RHRU100120 RHRG3060c harris mur1520 MUR820 RURD420 RURP820C	PDF
AC 440V Motor Speed Controller igbt circuit Abstract: 220v DC MOTOR SPEED CONTROLLER EMI filter 20a 220v 400hz 600V igbt dc to dc boost converter AC motor current limiter board 220v dc motor speed control circuit SMCS6M40-10-1 SMCT6M40-10-1 SMC6G25-60-1 SMCS6G070-060-1 Text: Motor Controllers Sensitron • 221 West Industry Court · Deer Park, NY 11729-4681 · Phone 631 586 7600 · Fax (631) 242 9798 · World Wide Web - www.sensitron.com · E-mail - sales@sensitron.com 146-1109 Total Motion Control Solutions www.sensitron.com/motorcontrollers.htm	Original		PDF

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MOSFET 1200V 6A Search Results

MOSFET 1200V 6A Result Highlights (5)

MOSFET 1200V 6A Datasheets Context Search

Untitled

IXFA6N120P

HiperFET

Untitled

Untitled

Untitled

IXFH12N120P

Untitled

Untitled

Untitled

600v 20 amp mosfet

IRU1239SC

Untitled

95A sensor hall

mosfet 1200V 40A

IXAN0016

SCS205KG

half bridge converter 2kw

Electric Welding Machine diagram

mosfet 1200V 40A

600V igbt dc to dc buck converter

igbt welding machine scheme

MOSFET 1200v 30a

AC 440V Motor Speed Controller igbt circuit