IXDD 614
Abstract: BJT de potencia zener diode 1N PH 48 CHN 841 lm339 igbt driver ups transformer winding formula mosfet igbt drivers theory MOSFET IGBT DRIVERS THEORY AND APPLICATIONS chn 614 diod MOSFET IGBT THEORY AND APPLICATIONS
Text: APPLICATION NOTE AN0002 MOSFET/IGBT DRIVERS THEORY AND APPLICATIONS By Abhijit D. Pathak 1. Introduction 1.1. MOSFET and IGBT Technology. 1.2. MOSFET Models and critical parameters 1.3. Turn-on and Turn-off phenomenon and their explanations 1.4. Power losses in Drivers
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AN0002
RH159NB
D-68623;
IXDD 614
BJT de potencia
zener diode 1N PH 48
CHN 841
lm339 igbt driver
ups transformer winding formula
mosfet igbt drivers theory
MOSFET IGBT DRIVERS THEORY AND APPLICATIONS
chn 614 diod
MOSFET IGBT THEORY AND APPLICATIONS
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ETC1-1-13
Abstract: PE9140
Text: Preliminary SPECIFICATION PE9140DIE Ultra-High Linearity Broadband Quad MOSFET Array Product Description The PE9140 is an ultra-high linearity, passive broadband Quad MOSFET array with high dynamic range performance. This quad array operates with differential
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PE9140DIE
PE9140
ETC1-1-13
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GP4060
Abstract: No abstract text available
Text: < Silicon RF Power MOS FET Discrete > RD07MVS1B RoHS Compliance, Silicon MOSFET Power Transistor,175MHz,520MHz,7W OUTLINE DRAWING DESCRIPTION 0.2+/-0.05 (0.22) 6.0+/-0.15 specifically designed for VHF/UHF RF power RD07MVS1 by optimizing MOSFET structure.
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RD07MVS1B
175MHz
520MHz
RD07MVS1B
RD07MVS1
175MHz)
520MHz)
Oct2011
GP4060
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Untitled
Abstract: No abstract text available
Text: < Silicon RF Power MOS FET Discrete > RD07MVS1B RoHS Compliance, Silicon MOSFET Power Transistor,175MHz,520MHz,7W OUTLINE DRAWING DESCRIPTION 0.2+/-0.05 (0.22) 6.0+/-0.15 specifically designed for VHF/UHF RF power RD07MVS1 by optimizing MOSFET structure.
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RD07MVS1B
175MHz
520MHz
RD07MVS1
RD07MVS1B
520MHz
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PE4140
Abstract: PE4140-02 617DB-1024 ETC1-1-13 PE4140-00 PE4140-01 PE4140-EK
Text: PRODUCT SPECIFICATION PE4140 Ultra-High Linearity Broadband Quad MOSFET Array Product Description The PE4140 is an ultra-high linearity, passive broadband Quad MOSFET array with high dynamic range performance capable of operation beyond 6.0 GHz. This quad array
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PE4140
PE4140
PE4140-02
617DB-1024
ETC1-1-13
PE4140-00
PE4140-01
PE4140-EK
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ETC1,6-4-2-3
Abstract: ETC1-1-13 PE4140 PE4140-00 PE4140-01 PE4140-02 PE4140-EK PE4140-06MLP3X3-3000C F617-00
Text: ADVANCE INFORMATION PE4140 Ultra-High Linearity Broadband Quad MOSFET Array Product Description The PE4140 is an ultra-high linearity, passive broadband Quad MOSFET array with high dynamic range performance capable of operation beyond 6.0 GHz. This quad array
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PE4140
PE4140
ETC1,6-4-2-3
ETC1-1-13
PE4140-00
PE4140-01
PE4140-02
PE4140-EK
PE4140-06MLP3X3-3000C
F617-00
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4134 mosfet
Abstract: mrf 861 transistor mrf 610 PE4134 RF POWER MOSFET
Text: PRODUCT SPECIFICATION PE4134 High Linearity Quad MOSFET Mixer for PCS & 3G BTS Product Description The PE4134 is a high linearity, passive Quad MOSFET Mixer for PCS & 3G Base Station Receivers, exhibiting high dynamic range performance over a broad LO drive
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PE4134
PE4134
4134 mosfet
mrf 861
transistor mrf 610
RF POWER MOSFET
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Untitled
Abstract: No abstract text available
Text: 40V 2.5A Buck Controller with Integrated High-Side MOSFET ISL78206 Features The ISL78206 is an AEC Q100 qualified 40V, 2.5A synchronous buck controller with a high-side MOSFET and low-side driver integrated. The ISL78206 supports a wide input voltage range
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ISL78206
ISL78206
ISL78201
5M-1994.
MO-153.
FN8618
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Untitled
Abstract: No abstract text available
Text: Product Specification PE4140 Ultra-High Linearity UltraCMOS Broadband Quad MOSFET Array Product Description The PE4140 is an ultra-high linearity, UltraCMOS™ passive broadband Quad MOSFET array with high dynamic range performance capable of operation beyond 6.0 GHz. This quad
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PE4140
PE4140
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Untitled
Abstract: No abstract text available
Text: TMF3201J Semiconductor Dual Gate MOSFET □ Description SOT-363 Unit in mm The TMF3201J is an N-channel enhancement type, dual-insulated gate, field-effect transistor that utilizes MOS construction. It consists of two equal dual gate MOSFET amplifiers with shared
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TMF3201J
OT-363
TMF3201J
OT-363
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617DB-1024
Abstract: PE4140G-06DFN balun diode mixer ETC1,6-4-2-3 ETC1-1-13 PE4140 PE4140-06DFN PE4140-EK 4239 mosfet
Text: Product Specification PE4140 Ultra-High Linearity UltraCMOS Broadband Quad MOSFET Array Product Description Features The PE4140 is an ultra-high linearity passive broadband Quad MOSFET array with high dynamic range performance capable of operation beyond 6.0 GHz. This quad array operates with
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PE4140
PE4140
617DB-1024
PE4140G-06DFN
balun diode mixer
ETC1,6-4-2-3
ETC1-1-13
PE4140-06DFN
PE4140-EK
4239 mosfet
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Untitled
Abstract: No abstract text available
Text: Product Specification PE4140 Ultra-High Linearity UltraCMOS Broadband Quad MOSFET Array Product Description Features The PE4140 is an ultra-high linearity passive broadband Quad MOSFET array with high dynamic range performance capable of operation beyond 6.0 GHz. This quad array operates with
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PE4140
PE4140
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RA18H1213G
Abstract: RA18H1213G-01
Text: MITSUBISHI RF MOSFET MODULE ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RA18H1213G 1.24-1.30GHz 18W 12.5V, 3 Stage Amp. For MOBILE RADIO DESCRIPTION The RA18H1213G is a 18-watt RF MOSFET Amplifier Module for 12.5-volt mobile radios that operate in the 1.24- to
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RA18H1213G
30GHz
RA18H1213G
18-watt
30-GHz
RA18H1213G-01
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Untitled
Abstract: No abstract text available
Text: Product Specification PE4140 Ultra-High Linearity UltraCMOS Broadband Quad MOSFET Array Product Description Features The PE4140 is an ultra-high linearity passive broadband Quad MOSFET array with high dynamic range performance capable of operation beyond 6.0 GHz. This quad array operates with
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PE4140
PE4140
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Mixers
Abstract: PE4140
Text: Product Specification PE4140 Ultra-High Linearity UltraCMOS Broadband Quad MOSFET Array Product Description Features The PE4140 is an ultra-high linearity passive broadband Quad MOSFET array with high dynamic range performance capable of operation beyond 6.0 GHz. This quad array operates with
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PE4140
PE4140
Mixers
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Untitled
Abstract: No abstract text available
Text: Passive Down Mixer PM1801 Product Features Application • High linearity passive Quad MOSFET mixer • High Reliability • Lower Manufacturing Cost • Higher Productivity • PCS & 3G BTS • RF Sub-Systems Description The MCM is implemented with reliable and mature MOSFET technology.
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PM1801
PM1801
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Untitled
Abstract: No abstract text available
Text: Product Specification PE4140 Ultra-High Linearity UltraCMOS Broadband Quad MOSFET Array Product Description Features The PE4140 is an ultra-high linearity passive broadband Quad MOSFET array with high dynamic range performance capable of operation beyond 6.0 GHz. This quad array operates with
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PE4140
PE4140
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transistor marking code 18W
Abstract: RA18H1213G RA18H1213G-101 f1270 Transistor 18W on
Text: MITSUBISHI RF MOSFET MODULE ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RA18H1213G RoHS Compliance , 1.24-1.30GHz 18W 12.5V, 3 Stage Amp. For MOBILE RADIO DESCRIPTION The RA18H1213G is a 18-watt RF MOSFET Amplifier Module for 12.5-volt mobile radios that operate in the 1.24- to
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RA18H1213G
30GHz
RA18H1213G
18-watt
30-GHz
transistor marking code 18W
RA18H1213G-101
f1270
Transistor 18W on
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95160
Abstract: MOSFET 9935 003 SOT363 Dual Gate MOSFET graphs TMF3201J Dual-Gate Mosfet 9935 mosfet 95160 3
Text: Preliminary Specification TMF3201J Dual N-Channel Dual-Gate MOSFET □ Description SOT363 Unit in mm The TMF3201J is an N-channel enhancement type, dual-insulated gate, field-effect transistor that utilizes MOS construction. It is consists of two equal dual gate MOSFET amplifiers with
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TMF3201J
OT363
TMF3201J
OT363
95160
MOSFET 9935
003 SOT363
Dual Gate MOSFET graphs
Dual-Gate Mosfet
9935 mosfet
95160 3
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Untitled
Abstract: No abstract text available
Text: Product Specification PE4134 High Linearity Quad MOSFET Mixer for PCS & 3G BTS Product Description The PE4134 is a high linearity, passive Quad MOSFET Mixer for PCS & 3G Base Station Receivers, exhibiting high dynamic range performance over a broad LO drive range of up to
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PE4134
PE4134
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RA18H1213G-101
Abstract: f1270 RA18H1213G package marking 18w 26 3 pin
Text: MITSUBISHI RF MOSFET MODULE ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RA18H1213G RoHS Compliance , 1.24-1.30GHz 18W 12.5V, 3 Stage Amp. For MOBILE RADIO DESCRIPTION The RA18H1213G is a 18-watt RF MOSFET Amplifier Module for 12.5-volt mobile radios that operate in the 1.24- to
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RA18H1213G
30GHz
RA18H1213G
18-watt
30-GHz
RA18H1213G-101
f1270
package marking 18w 26 3 pin
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4134 mosfet
Abstract: MRF MOSFET 70-0087 PE4134 RF POWER MOSFET ETK4-2T
Text: Product Specification PE4134 High Linearity Quad MOSFET Mixer for PCS & 3G BTS Product Description The PE4134 is a high linearity, passive Quad MOSFET Mixer for PCS & 3G Base Station Receivers, exhibiting high dynamic range performance over a broad LO drive range of up to
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PE4134
PE4134
4134 mosfet
MRF MOSFET
70-0087
RF POWER MOSFET
ETK4-2T
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Untitled
Abstract: No abstract text available
Text: NOT RECOMMENDED FOR NEW DESIGNS RECOMMENDED REPLACEMENT PART ISL85403 2.5A Regulator with Integrated High-Side MOSFET for Synchronous Buck or Boost Buck Converter ISL85402 Features The ISL85402 is a synchronous buck controller with a 125mΩ high-side MOSFET and low-side driver integrated. The ISL85402
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ISL85403
ISL85402
ISL85402
500kHz
5m-1994.
FN7640
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7A1 zener diode
Abstract: a3140 ca314 simple bass pre amplifier ca314 application notes analog IC CA3140 CA3140S PIN DIAGRAM OF IC CA3140 CA3130 peak detector CA3140AT
Text: S3 CA3140, CA3140A 4.5MHz, BiMOS Operational Amplifier with MOSFET Input/Bipolar Output Features Description • MOSFET Input Stage The CA3140A and CA3140 are integrated circuit operational am pli fiers that combine the advantages of high voltage PMOS transis
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CA3140,
CA3140A
CA3140A
CA3140
A3140
7A1 zener diode
ca314
simple bass pre amplifier
ca314 application notes
analog IC CA3140
CA3140S
PIN DIAGRAM OF IC CA3140
CA3130 peak detector
CA3140AT
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