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    MOSFET 057N03LS Search Results

    MOSFET 057N03LS Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TCK424G Toshiba Electronic Devices & Storage Corporation MOSFET Gate Driver IC, 2.7 to 28 V, External MOSFET Gate drive / Inrush current reducing, WCSP6G Visit Toshiba Electronic Devices & Storage Corporation
    TCK425G Toshiba Electronic Devices & Storage Corporation MOSFET Gate Driver IC, 2.7 to 28 V, External MOSFET Gate drive / Inrush current reducing, WCSP6G Visit Toshiba Electronic Devices & Storage Corporation
    TCK423G Toshiba Electronic Devices & Storage Corporation MOSFET Gate Driver IC, 2.7 to 28 V, External MOSFET Gate drive / Inrush current reducing, WCSP6G Visit Toshiba Electronic Devices & Storage Corporation
    TCK422G Toshiba Electronic Devices & Storage Corporation MOSFET Gate Driver IC, 2.7 to 28 V, External MOSFET Gate drive / Inrush current reducing, WCSP6G Visit Toshiba Electronic Devices & Storage Corporation
    MG800FXF1JMS3 Toshiba Electronic Devices & Storage Corporation N-ch SiC MOSFET Module, 3300 V, 800 A, iXPLV, High-side: SiC SBD、Low-side: SiC MOSFET Visit Toshiba Electronic Devices & Storage Corporation

    MOSFET 057N03LS Datasheets Context Search

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    Untitled

    Abstract: No abstract text available
    Text: BSC057N03LS G OptiMOS 3 Power-MOSFET Product Summary Features • Fast switching MOSFET for SMPS • Optimized technology for DC/DC converters V DS 30 V R DS on ,max 5.7 mΩ ID 71 A 1) • Qualified according to JEDEC for target applications • N-channel


    Original     		BSC057N03LS 057N03LS PDF

    057N03LS

    Abstract: BSC057N03LS JESD22 BSC057N03LS G
    Text: BSC057N03LS G OptiMOS 3 Power-MOSFET Product Summary Features • Fast switching MOSFET for SMPS • Optimized technology for DC/DC converters V DS 30 V R DS on ,max 5.7 mΩ ID 71 A 1) • Qualified according to JEDEC for target applications • N-channel


    Original     		BSC057N03LS 057N03LS 057N03LS JESD22 BSC057N03LS G PDF

    057N03LS

    Abstract: Mosfet 057n03ls
    Text: BSC057N03LS G OptiMOS 3 Power-MOSFET Product Summary Features VDS 30 V • Fast switching MOSFET for SMPS RDS on ,max 5.7 mW • Optimized technology for DC/DC converters ID 71 A • Qualified according to JEDEC1) for target applications PG-TDSON-8 • N-channel; Logic level


    Original     		BSC057N03LS IEC61249-2-21 057N03LS 057N03LS Mosfet 057n03ls PDF

    057N03LS

    Abstract: BSC057N03LS G BSC057N03LS IEC61249-2-21 JESD22 BSC057N03
    Text: BSC057N03LS G OptiMOS 3 Power-MOSFET Product Summary Features V DS 30 V • Fast switching MOSFET for SMPS R DS on ,max 5.7 mΩ • Optimized technology for DC/DC converters ID 71 A • Qualified according to JEDEC1) for target applications PG-TDSON-8 • N-channel; Logic level


    Original     		BSC057N03LS IEC61249-2-21 057N03LS 057N03LS BSC057N03LS G IEC61249-2-21 JESD22 BSC057N03 PDF

    057N03LS

    Abstract: No abstract text available
    Text: BSC057N03LS G OptiMOS 3 Power-Transistor Product Summary Features • Fast switching MOSFET for SMPS • Optimized technology for DC/DC converters V DS 30 V R DS on ,max 5.7 mΩ ID 71 A 1) • Qualified according to JEDEC for target applications • N-channel


    Original     		BSC057N03LS 057N03LS 057N03LS PDF