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    MOS20 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    H01N45A

    Abstract: No abstract text available
    Text: HI-SINCERITY Spec. No. : MOS200408 Issued Date : 2004.11.01 Revised Date : 2005.03.10 Page No. : 1/4 MICROELECTRONICS CORP. H01N45A H01N45A Pin Assignment 3-Lead Plastic TO-92 Package Code: A Pin 1: Gate Pin 2: Drain Pin 3: Source N-Channel Power Field Effect Transistor


    Original     		PDF MOS200408 H01N45A H01N45A 183oC 217oC 260oC

    mosfet y1

    Abstract: MOSFET MARK y2 mosfet k 61 y1 TL 434 H3055LJ Y2 MARKING
    Text: HI-SINCERITY Spec. No. : MOS200606 Issued Date : 2006.03.01 Revised Date : 2006.05.04 Page No. : 1/4 MICROELECTRONICS CORP. H3055LJ H3055LJ Pin Assignment 3-Lead Plastic TO-252 Package Code: J Pin 1: Gate Pin 2 & Tab: Drain Pin 3: Source Tab N-Channel Enhancement-Mode MOSFET 20V, 13A


    Original     		PDF MOS200606 H3055LJ H3055LJ O-252 V-10V) 200oC 183oC 217oC 260oC 245oC mosfet y1 MOSFET MARK y2 mosfet k 61 y1 TL 434 Y2 MARKING

    03n60

    Abstract: H03N60 H03N60E H03N60F transistor 100A 3N60
    Text: HI-SINCERITY Spec. No. : MOS200602 Issued Date : 2006.02.01 Revised Date : 2006.02.07 Page No. : 1/5 MICROELECTRONICS CORP. H03N60 Series H03N60 Series Pin Assignment Tab N-Channel Power Field Effect Transistor 3-Lead Plastic TO-220AB Package Code: E Pin 1: Gate


    Original     		PDF MOS200602 H03N60 O-220AB 200oC 183oC 217oC 260oC 245oC 10sec 03n60 H03N60E H03N60F transistor 100A 3N60

    H2N7002

    Abstract: No abstract text available
    Text: HI-SINCERITY Spec. No. : MOS200405 Issued Date : 1994.01.25 Revised Date : 2005.09.21 Page No. : 1/5 MICROELECTRONICS CORP. H2N7002 H2N7002 Pin Assignment & Symbol 3 N-Channel MOSFET 60V, 0.2A 1 2 3-Lead Plastic SOT-23 Package Code: N Pin 1: Gate 2: Source 3: Drain


    Original     		PDF MOS200405 H2N7002 H2N7002 OT-23 183oC 217oC 260oC

    H2302N

    Abstract: No abstract text available
    Text: HI-SINCERITY Spec. No. : MOS200836 Issued Date : 2008.03.06 Revised Date : 2008.03.06 Page No. : 1/7 MICROELECTRONICS CORP. H2302N H2302N Pin Assignment & Symbol 3 N-Channel Enhancement-Mode MOSFET 20V, 2.4A 1 2 3-Lead Plastic SOT-23 Package Code: N Pin 1: Gate 2: Source 3: Drain


    Original     		PDF MOS200836 H2302N H2302N OT-23 260oC 10sec

    H2N7002

    Abstract: No abstract text available
    Text: HI-SINCERITY Spec. No. : MOS200503 Issued Date : 2005.04.01 Revised Date : 2009.10.09 Page No. : 1/5 MICROELECTRONICS CORP. H2N7002 N-CHANNEL TRANSISTOR Description N-channel enhancement-mode MOS transistor. SOT-23 Absolute Maximum Ratings Drain-Source Voltage . 60 V


    Original     		PDF MOS200503 H2N7002 OT-23 183oC 217oC 260oC H2N7002

    H02N65

    Abstract: H02N60E H02N60F h02n
    Text: HI-SINCERITY Spec. No. : MOS200910 Issued Date : 2009.04.07 Revised Date : Page No. : 1/6 MICROELECTRONICS CORP. H02N65 Series H02N65 Series Pin Assignment Tab 3-Lead Plastic TO-220AB Package Code: E Pin 1: Gate Pin 2 & Tab: Drain Pin 3: Source N-Channel Power Field Effect Transistor


    Original     		PDF MOS200910 H02N65 O-220AB 183oC 217oC 260oC 245oC 10sec H02N60E H02N60F h02n

    *07n60

    Abstract: mosfet 600v 10a to-220ab H07N60 H07N60E H07N60F marking code diode 648
    Text: HI-SINCERITY Spec. No. : MOS200604 Issued Date : 2006.02.01 Revised Date : 2006.02.07 Page No. : 1/5 MICROELECTRONICS CORP. H07N60 Series H07N60 Series Pin Assignment Tab N-Channel Power Field Effect Transistor 3-Lead Plastic TO-220AB Package Code: E Pin 1: Gate


    Original     		PDF MOS200604 H07N60 O-220AB 183oC 217oC 260oC 10sec H07N60E, *07n60 mosfet 600v 10a to-220ab H07N60E H07N60F marking code diode 648

    rf630

    Abstract: HIRF630 HIRF630F
    Text: HI-SINCERITY Spec. No. : MOS200401 Issued Date : 2004.04.01 Revised Date : 2005.04.22 Page No. : 1/6 MICROELECTRONICS CORP. HIRF630 / HIRF630F HIRF630 Series Pin Assignment Tab N-CHANNEL POWER MOSFET 3-Lead Plastic TO-220AB Package Code: E Pin 1: Gate Pin 2 & Tab: Drain


    Original     		PDF MOS200401 HIRF630 HIRF630F O-220AB O-220FP 183oC 217oC 260oC HIRF630, rf630 HIRF630F

    mosfet 2g2

    Abstract: H9926CTS H9926TS mark 6A N-channel code TS
    Text: HI-SINCERITY Spec. No. : MOS200513 Issued Date : 2005.10.01 Revised Date : 2005.10.06 Page No. : 1/4 MICROELECTRONICS CORP. H9926TS / H9926CTS Dual N-Channel Enhancement-Mode MOSFET 20V, 6A 8-Lead Plastic TSSOP-8L Package Code: TS H9926TS Symbol & Pin Assignment


    Original     		PDF MOS200513 H9926TS H9926CTS V-10V) H9926CTS 183oC 217oC 260oC 245oC mosfet 2g2 mark 6A N-channel code TS

    40N03

    Abstract: 40n0 H40N03E
    Text: HI-SINCERITY Spec. No. : MOS200517 Issued Date : 2005.12.01 Revised Date : 2005.12.16 Page No. : 1/5 MICROELECTRONICS CORP. H40N03E H40N03E Pin Assignment Tab 3-Lead Plastic TO-220AB Package Code: E Pin 1: Gate Pin 2 & Tab: Drain Pin 3: Source N-Channel Enhancement-Mode MOSFET 25V, 40A


    Original     		PDF MOS200517 H40N03E H40N03E O-220AB o50oC 200oC 183oC 217oC 260oC 245oC 40N03 40n0

    H9926CS

    Abstract: H9926S
    Text: HI-SINCERITY Spec. No. : MOS200508 Issued Date : 2005.08.01 Revised Date : 2005.10.06 Page No. : 1/4 MICROELECTRONICS CORP. H9926S / H9926CS Dual N-Channel Enhancement-Mode MOSFET 20V, 6A 8 • 7 6 5 8-Lead Plastic SO-8 Package Code: S 1 2 3 4 H9926S Symbol & Pin Assignment


    Original     		PDF MOS200508 H9926S H9926CS V-10V) H9926CS 200oC 183oC 217oC 260oC

    MOSFET MARK y2

    Abstract: H01N60S H01N60SI H01N60SJ MOSFET MARK H1 mosfet y1
    Text: HI-SINCERITY Spec. No. : MOS200501 Issued Date : 2005.01.01 Revised Date : 2005.09.28 Page No. : 1/5 MICROELECTRONICS CORP. H01N60S Series N-Channel Power Field Effect Transistor H01N60S Series Pin Assignment Tab Description 1 This high voltage MOSFET uses an advanced termination scheme to


    Original     		PDF MOS200501 H01N60S 200oC 183oC 217oC 260oC 245oC H01N60SI, H01N60SJ MOSFET MARK y2 H01N60SI H01N60SJ MOSFET MARK H1 mosfet y1

    H9435S

    Abstract: No abstract text available
    Text: HI-SINCERITY Spec. No. : MOS200509 Issued Date : 2005.10.01 Revised Date : 2005.10.06 Page No. : 1/4 MICROELECTRONICS CORP. H9435S • P-Channel Enhancement-Mode MOSFET -30V, -5.3A 8-Lead Plastic SO-8 Package Code: S H9435S Symbol & Pin Assignment Features


    Original     		PDF MOS200509 H9435S H9435S Un150oC 200oC 183oC 217oC 260oC 245oC

    Untitled

    Abstract: No abstract text available
    Text: HI-SINCERITY Spec. No. : MOS200810 Issued Date : 2008.12.31 Revised Date : Page No. : 1/6 MICROELECTRONICS GROUP. H3401N H3401N Pin Assignment & Symbol 3 P-Channel Enhancement Mode Field Effect Transistor 1 2 3-Lead Plastic SOT-23 Package Code: N Pin 1: Gate 2: Source 3: Drain


    Original     		PDF MOS200810 H3401N H3401N OT-23 183oC 217oC 260oC 10sec

    02n60

    Abstract: all transistor 2N60 2N60 2N60 transistor PB40 bridge 2n60 application MOSFET MARK H1 TL 434 H02N60 H02N60E
    Text: HI-SINCERITY Spec. No. : MOS200403 Issued Date : 2004.07.01 Revised Date : 2005.09.28 Page No. : 1/7 MICROELECTRONICS CORP. H02N60 Series H02N60 Series Pin Assignment 3-Lead Plastic TO-252 Package Code: J Pin 1: Gate Pin 2 & Tab: Drain Pin 3: Source Tab N-Channel Power Field Effect Transistor


    Original     		PDF MOS200403 H02N60 O-252 200oC 183oC 217oC 260oC 245oC H02N60I, 02n60 all transistor 2N60 2N60 2N60 transistor PB40 bridge 2n60 application MOSFET MARK H1 TL 434 H02N60E

    Untitled

    Abstract: No abstract text available
    Text: HI-SINCERITY Spec. No. : MOS200836 Issued Date : 2008.03.06 Revised Date : 2008.03.06 Page No. : 1/6 MICROELECTRONICS CORP. H2301N H2301N Pin Assignment & Symbol P-Channel Enhancement-Mode MOSFET -20V, -2.2A 3 1 3-Lead Plastic SOT-23 Package Code: P Pin 1: Gate 2: Source 3: Drain


    Original     		PDF MOS200836 H2301N H2301N OT-23 183oC 217oC 260oC 10sec

    Untitled

    Abstract: No abstract text available
    Text: HI-SINCERITY Spec. No. : MOS200808 Issued Date : 2008.11.12 Revised Date :2008,12,30 Page No. : 1/5 MICROELECTRONICS CORP. H4946 Series 8-Lead Plastic DIP-8 Package Code: P N-CHANNEL ENHANCEMENT MODE POWER MOSFET 60V, 5A 8 Features • • RDS(on)<41mΩ@VGS=10V, ID=5.0A


    Original     		PDF MOS200808 H4946 H4946DS 183oC 217oC 260oC H4946DS H4946DP 10sec

    mosfet 600v 10a to-220ab

    Abstract: h10n60 n-CHANNEL POWER MOSFET 600v mosfet vgs 5v RD32 "MOSFET "600V 10A
    Text: HI-SINCERITY Spec. No. : MOS200902 Issued Date : 2009.01.20 Revised Date : 2009.08.05 Page No. : 1/5 MICROELECTRONICS CORP. H10N60 Series H10N60 Series Tab 3-Lead Plastic TO-220AB Package Code: E Pin 1: Gate Pin 2 & Tab: Drain Pin 3: Source N-Channel Power MOSFET 600V,10A


    Original     		PDF MOS200902 H10N60 O-220AB O-220FP) 183oC 217oC 260oC mosfet 600v 10a to-220ab n-CHANNEL POWER MOSFET 600v mosfet vgs 5v RD32 "MOSFET "600V 10A

    Untitled

    Abstract: No abstract text available
    Text: HI-SINCERITY Spec. No. : MOS200613 Issued Date : 2006.07.01 Revised Date : 2006.07.12 Page No. : 1/4 MICROELECTRONICS CORP. H2302N H2302N Pin Assignment & Symbol 3 N-Channel Enhancement-Mode MOSFET 20V, 2.4A 1 2 3-Lead Plastic SOT-23 Package Code: N Pin 1: Gate 2: Source 3: Drain


    Original     		PDF MOS200613 H2302N H2302N OT-23 183oC 217oC 260oC 10sec

    mosfet y1

    Abstract: MOSFET MARK y2 mosfet k 61 y1 y2 marking TL 434 mosfet sn60 ultra low idss H-3055
    Text: HI-SINCERITY Spec. No. : MOS200702 Issued Date : 2007.03.01 Revised Date : 2007.03.28 Page No. : 1/4 MICROELECTRONICS CORP. H3055MJ H3055MJ Pin Assignment 3-Lead Plastic TO-252 Package Code: J Pin 1: Gate Pin 2 & Tab: Drain Pin 3: Source Tab N-Channel Enhancement-Mode MOSFET 30V, 12A


    Original     		PDF MOS200702 H3055MJ H3055MJ O-252 V-10V) 10sec mosfet y1 MOSFET MARK y2 mosfet k 61 y1 y2 marking TL 434 mosfet sn60 ultra low idss H-3055

    H12N60F

    Abstract: H-10N h12n60 H10N60F mosfet p 30v 60a
    Text: HI-SINCERITY Spec. No. : MOS200902 Issued Date : 2009.01.20 Revised Date : Page No. : 1/4 MICROELECTRONICS CORP. H12N60F H12N60F N-Channel Power MOSFET 600V,12A Applications • Switch Mode Power Supply • Uninterruptable Power Supply • High Speed Power Switching


    Original     		PDF MOS200902 H12N60F O-220FP) H12N60F H10N60F Discre60 183oC 217oC 260oC H-10N h12n60 mosfet p 30v 60a

    H9435S

    Abstract: h4422 H9435 H943
    Text: HI-SINCERITY Spec. No. : MOS200907 Issued Date : 2009.03.09 Revised Date : Page No. : 1/5 MICROELECTRONICS CORP. H4422S • N-Channel Enhancement-Mode MOSFET 30V, 11A 8-Lead Plastic SO-8 Package Code: S H4422S Symbol & Pin Assignment Features • RDS(on)=13.5mΩ@VGS=10V, ID=11A


    Original     		PDF MOS200907 H4422S H4422S 183oC 217oC 260oC 245oC H9435S h4422 H9435 H943

    H2305

    Abstract: MOSFET 20V 45A mark tp sot23
    Text: HI-SINCERITY Spec. No. : MOS200807 Issued Date : 2008.11.12 Revised Date :2009,12,15 Page No. : 1/5 MICROELECTRONICS CORP. H2305N H2305N Pin Assignment & Symbol P-Channel Enhancement-Mode MOSFET -20V, -4.5A 3 1 2 3-Lead Plastic SOT-23 Package Code: N Pin 1: Gate 2: Source 3: Drain


    Original     		PDF MOS200807 H2305N H2305N OT-23 OT-23 183oC 217oC 260oC 10sec H2305 MOSFET 20V 45A mark tp sot23