Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    MOS2 Search Results

    SF Impression Pixel

    MOS2 Price and Stock

    KOA Speer Electronics Inc MOS2CT52R911J

    RES 910 OHM 5% 2W AXIAL
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey MOS2CT52R911J Cut Tape 6,911 1
    • 1 $0.4
    • 10 $0.223
    • 100 $0.1306
    • 1000 $0.08056
    • 10000 $0.08056
    		Buy Now
    MOS2CT52R911J Reel 6,000 2,000
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 $0.05293
    		Buy Now
    Newark MOS2CT52R911J Bulk 1,794 5
    • 1 $0.374
    • 10 $0.164
    • 100 $0.088
    • 1000 $0.088
    • 10000 $0.088
    		Buy Now

    KOA Speer Electronics Inc MOS2CT52R303J

    RES 30K OHM 5% 2W AXIAL
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey MOS2CT52R303J Reel 4,000 2,000
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 $0.05293
    		Buy Now
    Newark MOS2CT52R303J Bulk 438 5
    • 1 $0.374
    • 10 $0.164
    • 100 $0.088
    • 1000 $0.088
    • 10000 $0.088
    		Buy Now

    KOA Speer Electronics Inc MOS2CT52R182J

    RES 1.8K OHM 5% 2W AXIAL
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey MOS2CT52R182J Cut Tape 3,289 1
    • 1 $0.4
    • 10 $0.223
    • 100 $0.1306
    • 1000 $0.08056
    • 10000 $0.08056
    		Buy Now

    KOA Speer Electronics Inc MOS2CT52R75R0F

    RESISTOR
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey MOS2CT52R75R0F Cut Tape 1,990 1
    • 1 $0.73
    • 10 $0.408
    • 100 $0.2563
    • 1000 $0.18016
    • 10000 $0.18016
    		Buy Now

    KOA Speer Electronics Inc MOS2CT52R6812F

    RES 68.1K OHM 1% 2W AXIAL
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey MOS2CT52R6812F Cut Tape 1,940 1
    • 1 $0.76
    • 10 $0.434
    • 100 $0.259
    • 1000 $0.16321
    • 10000 $0.16321
    		Buy Now
    Newark MOS2CT52R6812F Bulk 1,900 5
    • 1 $0.697
    • 10 $0.33
    • 100 $0.22
    • 1000 $0.18
    • 10000 $0.18
    		Buy Now
    Find more MOS2 price and stock on Findchips.com

    MOS2 Datasheets (107)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    MOS-2120-Z1101E Advantech Uncategorized - Miscellaneous - GIGA LAN ETHERNET MODULE 1-CH Original PDF
    MOS-2220-X1101E Advantech Uncategorized - Miscellaneous - PARALLEL LPT MODULE 1-CH USB I Original PDF
    MOS-2220-Z1101E Advantech Uncategorized - Miscellaneous - HIGH SPEED SERIAL COM MODULE 1- Original PDF
    MOS-2230-Z1201E Advantech Uncategorized - Miscellaneous - CANBUS MODULE 2-CH USB I/F Original PDF
    MOS-2428 OK Industries Insertion, Extraction, Tools, TOOL INSERTER CMOS-SAFE 24-28PIN Original PDF
    MOS2CT52A100J KOA Speer Electronics MOS 10 OHM 5% Original PDF
    MOS2CT52A102J KOA Speer Electronics MOS 1000 OHM 5% Original PDF
    MOS2CT52A150J KOA Speer Electronics MOS 15 OHM 5% Original PDF
    MOS2CT52A151J KOA Speer Electronics MOS 150 OHM 5% Original PDF
    MOS2CT52A180J KOA Speer Electronics MOS 18 OHM 5% Original PDF
    MOS2CT52A221J KOA Speer Electronics MOS 220 OHM 5% Original PDF
    MOS2CT52A300J KOA Speer Electronics MOS 30 OHM 5% Original PDF
    MOS2CT52A470J KOA Speer Electronics MOS 47 OHM 5% Original PDF
    MOS2CT52R1000F KOA Speer Electronics MOS 100 OHM 1% Original PDF
    MOS2CT52R1003F KOA Speer Electronics MOS 100000 OHM 1% Original PDF
    MOS2CT52R100G KOA Speer Electronics MOS 10 OHM 2% Original PDF
    MOS2CT52R100J KOA Speer Electronics MOS 10 OHM 5% Original PDF
    MOS2CT52R101J KOA Speer Electronics MOS 100 OHM 5% Original PDF
    MOS2CT52R102G KOA Speer Electronics MOS 1000 OHM 2% Original PDF
    MOS2CT52R102J KOA Speer Electronics MOS 1000 OHM 5% Original PDF

    MOS2 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    H01N45A

    Abstract: No abstract text available
    Text: HI-SINCERITY Spec. No. : MOS200408 Issued Date : 2004.11.01 Revised Date : 2005.03.10 Page No. : 1/4 MICROELECTRONICS CORP. H01N45A H01N45A Pin Assignment 3-Lead Plastic TO-92 Package Code: A Pin 1: Gate Pin 2: Drain Pin 3: Source N-Channel Power Field Effect Transistor


    Original     		PDF MOS200408 H01N45A H01N45A 183oC 217oC 260oC

    270v varistor d - 302

    Abstract: MOS3CT521 mos2ct52 270v varistor d 302 SPR3CL20A BPR58 MOS2CL15A MOS1CT52 KOA CMT SPRX2CL15A
    Text: "QQFOEJY$ QBDLBHJOHMFBEFEDPNQPOFOUT BYJBMUBQJOHT MO1/2*1 MO1/2 MO1 MO1 MO1 MO2 MO2 MO2 MOS1/2*2 MOS1/2 MOS1 MOS1C8 MOS1 MOS2 MOS2 MOS3 MOS3 MOS3 SPR1/4*3 SPR1/4 SPR1/2 SPR1/2 SPR1/2 SPR1 SPR1 SPR2 SPR2 SPR3 SPR3 SPR3 LT1/6 LT1/6 LT1/4 LT1/4 RF16 RF16


    Original     		PDF LP1/16 SDT101A MO1/2CT52 MO1/2CL52 MO1CT52 MO1CT521 MO1CL521 MO2CT521 270v varistor d - 302 MOS3CT521 mos2ct52 270v varistor d 302 SPR3CL20A BPR58 MOS2CL15A MOS1CT52 KOA CMT SPRX2CL15A

    mosfet y1

    Abstract: MOSFET MARK y2 mosfet k 61 y1 TL 434 H3055LJ Y2 MARKING
    Text: HI-SINCERITY Spec. No. : MOS200606 Issued Date : 2006.03.01 Revised Date : 2006.05.04 Page No. : 1/4 MICROELECTRONICS CORP. H3055LJ H3055LJ Pin Assignment 3-Lead Plastic TO-252 Package Code: J Pin 1: Gate Pin 2 & Tab: Drain Pin 3: Source Tab N-Channel Enhancement-Mode MOSFET 20V, 13A


    Original     		PDF MOS200606 H3055LJ H3055LJ O-252 V-10V) 200oC 183oC 217oC 260oC 245oC mosfet y1 MOSFET MARK y2 mosfet k 61 y1 TL 434 Y2 MARKING

    03n60

    Abstract: H03N60 H03N60E H03N60F transistor 100A 3N60
    Text: HI-SINCERITY Spec. No. : MOS200602 Issued Date : 2006.02.01 Revised Date : 2006.02.07 Page No. : 1/5 MICROELECTRONICS CORP. H03N60 Series H03N60 Series Pin Assignment Tab N-Channel Power Field Effect Transistor 3-Lead Plastic TO-220AB Package Code: E Pin 1: Gate


    Original     		PDF MOS200602 H03N60 O-220AB 200oC 183oC 217oC 260oC 245oC 10sec 03n60 H03N60E H03N60F transistor 100A 3N60

    H2N7002

    Abstract: No abstract text available
    Text: HI-SINCERITY Spec. No. : MOS200405 Issued Date : 1994.01.25 Revised Date : 2005.09.21 Page No. : 1/5 MICROELECTRONICS CORP. H2N7002 H2N7002 Pin Assignment & Symbol 3 N-Channel MOSFET 60V, 0.2A 1 2 3-Lead Plastic SOT-23 Package Code: N Pin 1: Gate 2: Source 3: Drain


    Original     		PDF MOS200405 H2N7002 H2N7002 OT-23 183oC 217oC 260oC

    R07DS0904EJ0120

    Abstract: RJK03P0DPA
    Text: Preliminary Datasheet RJK03P0DPA MOS1 30 V, 20 A, 7.0 mΩ max. MOS2 30 V, 25 A, 7.2 mΩ max. Built in SBD Dual N-channel Power MOS FET High Speed Power Switching R07DS0904EJ0120 Rev.1.20 Nov 01, 2012 Features •     Low on-resistance Capable of 4.5 V gate drive


    Original     		PDF RJK03P0DPA R07DS0904EJ0120 PWSN0008DD-B RJK03P0DPA

    H2302N

    Abstract: No abstract text available
    Text: HI-SINCERITY Spec. No. : MOS200836 Issued Date : 2008.03.06 Revised Date : 2008.03.06 Page No. : 1/7 MICROELECTRONICS CORP. H2302N H2302N Pin Assignment & Symbol 3 N-Channel Enhancement-Mode MOSFET 20V, 2.4A 1 2 3-Lead Plastic SOT-23 Package Code: N Pin 1: Gate 2: Source 3: Drain


    Original     		PDF MOS200836 H2302N H2302N OT-23 260oC 10sec

    H2N7002

    Abstract: No abstract text available
    Text: HI-SINCERITY Spec. No. : MOS200503 Issued Date : 2005.04.01 Revised Date : 2009.10.09 Page No. : 1/5 MICROELECTRONICS CORP. H2N7002 N-CHANNEL TRANSISTOR Description N-channel enhancement-mode MOS transistor. SOT-23 Absolute Maximum Ratings Drain-Source Voltage . 60 V


    Original     		PDF MOS200503 H2N7002 OT-23 183oC 217oC 260oC H2N7002

    H02N65

    Abstract: H02N60E H02N60F h02n
    Text: HI-SINCERITY Spec. No. : MOS200910 Issued Date : 2009.04.07 Revised Date : Page No. : 1/6 MICROELECTRONICS CORP. H02N65 Series H02N65 Series Pin Assignment Tab 3-Lead Plastic TO-220AB Package Code: E Pin 1: Gate Pin 2 & Tab: Drain Pin 3: Source N-Channel Power Field Effect Transistor


    Original     		PDF MOS200910 H02N65 O-220AB 183oC 217oC 260oC 245oC 10sec H02N60E H02N60F h02n

    *07n60

    Abstract: mosfet 600v 10a to-220ab H07N60 H07N60E H07N60F marking code diode 648
    Text: HI-SINCERITY Spec. No. : MOS200604 Issued Date : 2006.02.01 Revised Date : 2006.02.07 Page No. : 1/5 MICROELECTRONICS CORP. H07N60 Series H07N60 Series Pin Assignment Tab N-Channel Power Field Effect Transistor 3-Lead Plastic TO-220AB Package Code: E Pin 1: Gate


    Original     		PDF MOS200604 H07N60 O-220AB 183oC 217oC 260oC 10sec H07N60E, *07n60 mosfet 600v 10a to-220ab H07N60E H07N60F marking code diode 648

    rf630

    Abstract: HIRF630 HIRF630F
    Text: HI-SINCERITY Spec. No. : MOS200401 Issued Date : 2004.04.01 Revised Date : 2005.04.22 Page No. : 1/6 MICROELECTRONICS CORP. HIRF630 / HIRF630F HIRF630 Series Pin Assignment Tab N-CHANNEL POWER MOSFET 3-Lead Plastic TO-220AB Package Code: E Pin 1: Gate Pin 2 & Tab: Drain


    Original     		PDF MOS200401 HIRF630 HIRF630F O-220AB O-220FP 183oC 217oC 260oC HIRF630, rf630 HIRF630F

    mosfet 2g2

    Abstract: H9926CTS H9926TS mark 6A N-channel code TS
    Text: HI-SINCERITY Spec. No. : MOS200513 Issued Date : 2005.10.01 Revised Date : 2005.10.06 Page No. : 1/4 MICROELECTRONICS CORP. H9926TS / H9926CTS Dual N-Channel Enhancement-Mode MOSFET 20V, 6A 8-Lead Plastic TSSOP-8L Package Code: TS H9926TS Symbol & Pin Assignment


    Original     		PDF MOS200513 H9926TS H9926CTS V-10V) H9926CTS 183oC 217oC 260oC 245oC mosfet 2g2 mark 6A N-channel code TS

    40N03

    Abstract: 40n0 H40N03E
    Text: HI-SINCERITY Spec. No. : MOS200517 Issued Date : 2005.12.01 Revised Date : 2005.12.16 Page No. : 1/5 MICROELECTRONICS CORP. H40N03E H40N03E Pin Assignment Tab 3-Lead Plastic TO-220AB Package Code: E Pin 1: Gate Pin 2 & Tab: Drain Pin 3: Source N-Channel Enhancement-Mode MOSFET 25V, 40A


    Original     		PDF MOS200517 H40N03E H40N03E O-220AB o50oC 200oC 183oC 217oC 260oC 245oC 40N03 40n0

    H9926CS

    Abstract: H9926S
    Text: HI-SINCERITY Spec. No. : MOS200508 Issued Date : 2005.08.01 Revised Date : 2005.10.06 Page No. : 1/4 MICROELECTRONICS CORP. H9926S / H9926CS Dual N-Channel Enhancement-Mode MOSFET 20V, 6A 8 • 7 6 5 8-Lead Plastic SO-8 Package Code: S 1 2 3 4 H9926S Symbol & Pin Assignment


    Original     		PDF MOS200508 H9926S H9926CS V-10V) H9926CS 200oC 183oC 217oC 260oC

    H9435S

    Abstract: No abstract text available
    Text: HI-SINCERITY Spec. No. : MOS200509 Issued Date : 2005.10.01 Revised Date : 2005.10.06 Page No. : 1/4 MICROELECTRONICS CORP. H9435S • P-Channel Enhancement-Mode MOSFET -30V, -5.3A 8-Lead Plastic SO-8 Package Code: S H9435S Symbol & Pin Assignment Features


    Original     		PDF MOS200509 H9435S H9435S Un150oC 200oC 183oC 217oC 260oC 245oC

    transistor 6n60

    Abstract: 6N60 H06N60F 06N60 H06N60 H06N60E H06N60U marking code 749 PB40 MOS200402
    Text: HI-SINCERITY Spec. No. : MOS200402 Issued Date : 2004.04.01 Revised Date : 2005.03.10 Page No. : 1/6 MICROELECTRONICS CORP. H06N60 Series H06N60 Series Pin Assignment 3-Lead Plastic TO-263 Package Code: U Pin 1: Gate Pin 2 & Tab: Drain Pin 3: Source Tab N-Channel Power Field Effect Transistor


    Original     		PDF MOS200402 H06N60 O-263 spee80 183oC 217oC 260oC H06N60U, H06N60E, transistor 6n60 6N60 H06N60F 06N60 H06N60E H06N60U marking code 749 PB40 MOS200402

    Untitled

    Abstract: No abstract text available
    Text: HI-SINCERITY Spec. No. : MOS200810 Issued Date : 2008.12.31 Revised Date : Page No. : 1/6 MICROELECTRONICS GROUP. H3401N H3401N Pin Assignment & Symbol 3 P-Channel Enhancement Mode Field Effect Transistor 1 2 3-Lead Plastic SOT-23 Package Code: N Pin 1: Gate 2: Source 3: Drain


    Original     		PDF MOS200810 H3401N H3401N OT-23 183oC 217oC 260oC 10sec

    02n60

    Abstract: all transistor 2N60 2N60 2N60 transistor PB40 bridge 2n60 application MOSFET MARK H1 TL 434 H02N60 H02N60E
    Text: HI-SINCERITY Spec. No. : MOS200403 Issued Date : 2004.07.01 Revised Date : 2005.09.28 Page No. : 1/7 MICROELECTRONICS CORP. H02N60 Series H02N60 Series Pin Assignment 3-Lead Plastic TO-252 Package Code: J Pin 1: Gate Pin 2 & Tab: Drain Pin 3: Source Tab N-Channel Power Field Effect Transistor


    Original     		PDF MOS200403 H02N60 O-252 200oC 183oC 217oC 260oC 245oC H02N60I, 02n60 all transistor 2N60 2N60 2N60 transistor PB40 bridge 2n60 application MOSFET MARK H1 TL 434 H02N60E

    Untitled

    Abstract: No abstract text available
    Text: Preliminary Datasheet RJK03P6DPA MOS1 30 V, 15 A, 9.4 mΩ max. MOS2 30 V, 45 A, 2.4 mΩ max. Built in SBD Dual N-channel Power MOS FET High Speed Power Switching R07DS0905EJ0110 Rev.1.10 Nov 01, 2012 Features •     Low on-resistance Capable of 4.5 V gate drive


    Original     		PDF RJK03P6DPA R07DS0905EJ0110 PWSN0008DD-B

    Untitled

    Abstract: No abstract text available
    Text: HI-SINCERITY Spec. No. : MOS200836 Issued Date : 2008.03.06 Revised Date : 2008.03.06 Page No. : 1/6 MICROELECTRONICS CORP. H2301N H2301N Pin Assignment & Symbol P-Channel Enhancement-Mode MOSFET -20V, -2.2A 3 1 3-Lead Plastic SOT-23 Package Code: P Pin 1: Gate 2: Source 3: Drain


    Original     		PDF MOS200836 H2301N H2301N OT-23 183oC 217oC 260oC 10sec

    Untitled

    Abstract: No abstract text available
    Text: HI-SINCERITY Spec. No. : MOS200808 Issued Date : 2008.11.12 Revised Date :2008,12,30 Page No. : 1/5 MICROELECTRONICS CORP. H4946 Series 8-Lead Plastic DIP-8 Package Code: P N-CHANNEL ENHANCEMENT MODE POWER MOSFET 60V, 5A 8 Features • • RDS(on)<41mΩ@VGS=10V, ID=5.0A


    Original     		PDF MOS200808 H4946 H4946DS 183oC 217oC 260oC H4946DS H4946DP 10sec

    mosfet 600v 10a to-220ab

    Abstract: h10n60 n-CHANNEL POWER MOSFET 600v mosfet vgs 5v RD32 "MOSFET "600V 10A
    Text: HI-SINCERITY Spec. No. : MOS200902 Issued Date : 2009.01.20 Revised Date : 2009.08.05 Page No. : 1/5 MICROELECTRONICS CORP. H10N60 Series H10N60 Series Tab 3-Lead Plastic TO-220AB Package Code: E Pin 1: Gate Pin 2 & Tab: Drain Pin 3: Source N-Channel Power MOSFET 600V,10A


    Original     		PDF MOS200902 H10N60 O-220AB O-220FP) 183oC 217oC 260oC mosfet 600v 10a to-220ab n-CHANNEL POWER MOSFET 600v mosfet vgs 5v RD32 "MOSFET "600V 10A

    Untitled

    Abstract: No abstract text available
    Text: HAT2029R Silicon N Channel Power MOS FET High Speed Power Switching HITACHI ADE-208-525 C 4th. Edition Features • • • • Low on-resistance Capable o f 2.5 V gate drive Low drive current High density mounting Outline SOP-8 78 5 6 ò ô MOS1 MOS2 S1 S3


    OCR Scan     		PDF HAT2029R ADE-208-525

    Untitled

    Abstract: No abstract text available
    Text: HAT1025R Silicon P Channel Power MOS FET High Speed Power Switching HITACHI Features • • • • Low on-resistance Capable of 2.5 V gate drive Low drive current High density mounting Outline SOP- 8 4 7 8 D D 5 6 D D Î-Î Î-Î ó S1 MOS1 ó s3 MOS2 1.3


    OCR Scan     		PDF HAT1025R ADE-208-437 MS-012AA