pa1556ah
Abstract: PA1501H nec PA1501H PA1556A PA1550H PA1556 PA1522H uPA1712 pa1560h 2sk3326
Text: NEC Power MOS FET Low Voltage MOS FET Series High Voltage MOS FET Series Semi Power MOS FET MOS FET Array NEC Power MOS FET N7-L Series Low Voltage Power MOS FET Lower On-state Resistance Easier drive by 4V, 4.5V, CMOS Logic IC N5-H Series High Voltage Power MOS FET
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O-251/-252,
O-220/-262
SC-96
SC-95
SC-96
OT-23)
D10702EJAV0PF00
pa1556ah
PA1501H
nec PA1501H
PA1556A
PA1550H
PA1556
PA1522H
uPA1712
pa1560h
2sk3326
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NE5500434
Abstract: nec RF package SOT89 nec 2501
Text: DATA SHEET SILICON POWER MOS FET NE5500434 N-CHANNEL SILICON POWER MOS FET POWER AMPLIFIER FOR GSM CLASS 4 HANDSETS DESCRIPTION The NE5500434 is an N-channel silicon power MOS FET specially designed as the transmission power amplifier for GSM class 4 handsets. Dies are manufactured using our MOS technology our 0.6 m WSi gate lateral MOS
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NE5500434
NE5500434
OT-89
nec RF package SOT89
nec 2501
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power bjt advantages and disadvantages
Abstract: advantages and disadvantages of cmos BJT Gate Drive circuit bjt advantages and disadvantages amplifier advantages and disadvantages linear cmos logic advantages of a bjt amplifier polysilicon resistor fabrication BJT amplifiers Cmos not gate high frequency
Text: Silicon Gate CMOS Linear Technology Introduction Historically, MOS technology has been the domain of the digital designer. Analog designers might use MOS transistors for the input stage of a high input impedance operational amplifier or use discrete MOS transistors in
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Untitled
Abstract: No abstract text available
Text: Preliminary Datasheet R2J20658BNP R07DS0550EJ0101 Previous No.: R07DS0542EJ0100 Rev.1.01 Sep 30, 2011 Integrated Driver - MOS FET (DrMOS) Description The R2J20658BNP multi-chip module incorporates a high-side MOS FET, low-side MOS FET, and MOS-FET driver
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R2J20658BNP
R07DS0550EJ0101
R07DS0542EJ0100)
R2J20658BNP
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Untitled
Abstract: No abstract text available
Text: Preliminary Datasheet R2J20658BNP R07DS0550EJ0101 Previous No.: R07DS0542EJ0100 Rev.1.01 Sep 30, 2011 Integrated Driver - MOS FET (DrMOS) Description The R2J20658BNP multi-chip module incorporates a high-side MOS FET, low-side MOS FET, and MOS-FET driver
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R2J20658BNP
R07DS0550EJ0101
R07DS0542EJ0100)
R2J20658BNP
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Untitled
Abstract: No abstract text available
Text: APT6015LVFR 600V POWER MOS V 38A 0.150W FREDFET Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®
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APT6015LVFR
O-264
O-264
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Untitled
Abstract: No abstract text available
Text: APT6011LVFR 600V POWER MOS V 49A 0.110W FREDFET Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®
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APT6011LVFR
O-264
O-264
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Untitled
Abstract: No abstract text available
Text: NJU7043 Input/Output Full-Swing High Output Current Dual C-MOS Operational Amplifier •GNERAL DESCRIPTION The NJU7043 is a dual C-MOS operational amplifier permitting a full-swing input and output in under high load. Based on C-MOS technology, there are excellent features
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NJU7043
NJU7043
NJU7043D
NJU7043M
Isourse40mA
Isink-40mA
10kHz
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Untitled
Abstract: No abstract text available
Text: NJU7043SCC Input/Output Full-Swing High Output Current Dual C-MOS Operational Amplifier •GENERAL DESCRIPTION The NJU7043 is a dual C-MOS operational amplifier permitting a full-swing input and output in under high load. Based on C-MOS technology, there are excellent features
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NJU7043SCC
NJU7043
PCSP20â
10kHz
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APT6015JVFR
Abstract: No abstract text available
Text: APT6015JVFR 600V POWER MOS V 35A 0.150W FREDFET S S ® Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS
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APT6015JVFR
E145592
OT-227
APT6015JVFR
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Untitled
Abstract: No abstract text available
Text: Preliminary Datasheet R2J20655BNP R07DS0548EJ0101 Previous No.: R07DS0540EJ0100 Rev.1.01 Sep 30, 2011 Integrated Driver - MOS FET (DrMOS) Description The R2J20655BNP multi-chip module incorporates a high-side MOS FET, low-side MOS FET, and MOS-FET driver
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R2J20655BNP
R07DS0548EJ0101
R07DS0540EJ0100)
R2J20655BNP
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Untitled
Abstract: No abstract text available
Text: APT12045L2VR 1200V 28A 0.450Ω POWER MOS V Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®
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APT12045L2VR
O-264
APT12045L2VR
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APT10050LVR
Abstract: No abstract text available
Text: APT10050LVR 21A 0.500Ω 1000V POWER MOS V Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®
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APT10050LVR
O-264
O-264
APT10050LVR
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Untitled
Abstract: No abstract text available
Text: APT1201R5BVR 1200V 10A 1.500Ω POWER MOS V Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®
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APT1201R5BVR
O-247
O-247
30TO-SOURCE
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Untitled
Abstract: No abstract text available
Text: APT6025SVR 600V 25A 0.250W POWER MOS V D3PAK V® Power MOS is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®
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APT6025SVR
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Untitled
Abstract: No abstract text available
Text: APT12045L2VFR 1200V 28A 0.450Ω POWER MOS V Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®
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APT12045L2VFR
O-264
O-264
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APT12080LVR
Abstract: 1200v diode
Text: APT12080LVR 16A 0.800Ω 1200V POWER MOS V Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®
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APT12080LVR
O-264
O-264
APT12080LVR
1200v diode
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APT1001RSVR
Abstract: No abstract text available
Text: APT1001RSVR 11A 1.000Ω 1000V POWER MOS V D3PAK Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V
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APT1001RSVR
APT1001RSVR
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fet series
Abstract: fet book
Text: MOS FET Series .04'&5 1BOBTPOJD4FNJDPOEVDUPS%JTDSFUF%FWJDFT$P -UE 1BOBTPOJD.04'&5 Panasonic’s MOS FET Series open the new dimension of applications. Panasonic MOS FET series facilitate the industry-top-level process technology. Panasonic adds to a rich MOS FET portfolio which includes composite and high tolerance in smaller package types.
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A02006BE
fet series
fet book
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Untitled
Abstract: No abstract text available
Text: APT6011B2VFR 600V POWER MOS V 49A 0.110W FREDFET Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®
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APT6011B2VFR
MIL-STD-750
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Untitled
Abstract: No abstract text available
Text: APT10086SVR 13A 0.860Ω 1000V POWER MOS V Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®
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APT10086SVR
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101490
Abstract: P22n HM50464P-12 50464 ram
Text: Quick Reference Guide to Hitachi 1C Memories Package Information Reliability of Hitachi 1C Memories Applications MOS Static RAM MOS Pseudo Static RAM Application Specific Memory MOS Dynamic RAM MOS Dynamic RAM Module MOS Mask ROM MOS PROM ECL RAM HITACHI 1C MEMORY
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ADE-40
101490
P22n
HM50464P-12
50464 ram
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rca thyristor manual
Abstract: HN623258 101490
Text: Quick Reference Guide to Hitachi 1C Memories Package Information Reliability of Hitachi 1C Memories Applications MOS Static RAM MOS Pseudo Static RAM Application Specific Memory MOS Dynamic RAM MOS Dynamic RAM Module MOS Mask ROM MOS PROM ECL RAM P> Jc^< j
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Untitled
Abstract: No abstract text available
Text: POWER MOS FET New-Product Lineup New-Product Series Our original technology has improved the performance of the conventional 7^MOS series. L2-;r-MOS IV, V Low-voltage Series •••Low-voltage drive (4V), ultralow on-resistance tt-MOS II*5, III'5, IV (High-voltage Series)*"Low on-resistance, large current, high voltage
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OCR Scan
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AC100V
5K1120
2SK1359
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