C10535E
Abstract: C10943X MEI-1202 PA1701 TEA-1035 UPA1701 1037 u
Text: DATA SHEET MOS Field Effect Power Transistors µPA1701 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION PACKAGE DIMENSIONS This product is N-Channel MOS Field Effect Transistor in millimeter designed for power management applications of note
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PA1701
C10535E
C10943X
MEI-1202
PA1701
TEA-1035
UPA1701
1037 u
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C10535E
Abstract: C10943X C11531E MEI-1202 PA1703 TEA-1035
Text: DATA SHEET SHEET DATA MOS FIELD EFFECT POWER TRANSISTORS µPA1703 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION PACKAGE DIMENSIONS This product is N-Channel MOS Field Effect Transis- in millimeter tor designed for power management applications of
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PA1703
C10535E
C10943X
C11531E
MEI-1202
PA1703
TEA-1035
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MEI-1202
Abstract: PA1703 TEA-1035 C10535E C10943X C11531E transistor t 2180
Text: DATA SHEET MOS FIELD EFFECT POWER TRANSISTORS µPA1703 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION PACKAGE DIMENSIONS This product is N-Channel MOS Field Effect Transis- in millimeter tor designed for power management applications of notebook computers.
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PA1703
MEI-1202
PA1703
TEA-1035
C10535E
C10943X
C11531E
transistor t 2180
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C10535E
Abstract: C10943X MEI-1202 PA1710 G1088
Text: DATA SHEET MOS Field Effect Power Transistors µPA1710 SWITCHING P-CHANNEL POWER MOS FFT INDUSTRIAL USE DESCRIPTION PACKAGE DIMENSIONS This product is P-Channel MOS Field Effect Transistor in millimeter designed for DC/DC converter and power management 8
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PA1710
980pF
78Max
C10535E
C10943X
MEI-1202
PA1710
G1088
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Untitled
Abstract: No abstract text available
Text: DATA SHEET SHEET DATA MOS FIELD EFFECT POWER TRANSISTORS µPA1703 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION PACKAGE DIMENSIONS This product is N-Channel MOS Field Effect Transis- in millimeter tor designed for power management applications of
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PA1703
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C10535E
Abstract: C10943X C11531E MEI-1202 PA1700A TEA-1035
Text: DATA SHEET MOS FIELD EFFECT POWER TRANSISTORS µPA1700A SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION The µ PA1700A is N-Channel MOS Field Effect Transistor designed for DC/DC converters and power management of notebook computers. PACKAGE DRAWING Unit : mm
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PA1700A
PA1700A
C10535E
C10943X
C11531E
MEI-1202
TEA-1035
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C10535E
Abstract: C10943X MEI-1202 PA1702 TEA-1035
Text: DATA SHEET MOS FIELD EFFECT POWER TRANSISTORS µPA1702 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION PACKAGE DIMENSIONS This product is N-Channel MOS Field Effect in: millimeter Transistor designed for DC/DC converters and power 8 management applications of notebook computers.
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PA1702
C10535E
C10943X
MEI-1202
PA1702
TEA-1035
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C10535E
Abstract: C10943X C11531E MEI-1202 PA1700A TEA-1035
Text: DATA SHEET MOS FIELD EFFECT POWER TRANSISTORS µPA1700A SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION PACKAGE DIMENSIONS This product is N-Channel MOS Field Effect in millimeter Transistor designed for DC/DC converters and power 8 5 management of notebook computers.
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PA1700A
C10535E
C10943X
C11531E
MEI-1202
PA1700A
TEA-1035
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uPA2715
Abstract: UPA2715GR M15022
Text: PRELIMINARY PRODUCT INFORMATION MOS FIELD EFFECT TRANSISTOR µ PA2715GR SWITCHING P-CHANNEL POWER MOS FET DESCRIPTION PACKAGE DRAWING Unit: mm The µPA2715GR is P-Channel MOS Field Effect Transistor designed for power management applications of notebook
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PA2715GR
PA2715GR
uPA2715
UPA2715GR
M15022
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C10535E
Abstract: C10943X MEI-1202 PA1751 TEA-1035
Text: DATA SHEET MOS FIELD EFFECT POWER TRANSISTORS µPA1751 SWITCHING DUAL N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION PACKAGE DIMENSIONS This product is Dual N-Channel MOS Field Ef- in: millimeter fect Transistor designed for power management application of notebook computers, and Li-ion bat-
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PA1751
C10535E
C10943X
MEI-1202
PA1751
TEA-1035
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Untitled
Abstract: No abstract text available
Text: DATA SHEET MOS FIELD EFFECT POWER TRANSISTORS _ ¿tPA1702 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION PACKAGE DIMENSIONS This product is N-Channel MOS Field Effect in: millimeter Transistor designed for DC/DC converters and power
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tPA1702
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Untitled
Abstract: No abstract text available
Text: DATA SHEET MOS FIELD EFFECT POWER TRANSISTORS _ ¿¿PA1702 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION PACKAGE DIMENSIONS This product is N-Channel MOS Field Effect in: millimeter Transistor designed for DC/DC converters and power
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uPA1702
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a1037
Abstract: No abstract text available
Text: DATA SHEET MOS FIELD EFFECT POWER TRANSISTORS _ ¿¿PA1700A SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION PACKAGE DIMENSIONS in millimeter This product is N-Channel MOS Field Effect Transistor designed for DC/DC converters and power
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uPA1700A
a1037
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Untitled
Abstract: No abstract text available
Text: DATA SHEET MOS FIELD EFFECT POWER TRANSISTORS _ pPM 703 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION PACKAGE DIMENSIONS This product is N-Channel MOS Field Effect Transis in millimeter tor designed for power management applications of
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Untitled
Abstract: No abstract text available
Text: DATA SHEET NEC / MOS FIELD EFFECT POWER TRANSISTORS _ /¿PA 1700A SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION PACKAGE DIMENSIONS in millimeter This product is N-Channel MOS Field Effect Transistor designed for DC/DC converters and power
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Untitled
Abstract: No abstract text available
Text: DATA SHEET MOS Field Effect Power Transistors AiPA1 710 SWITCHING P-CHANNEL POWER MOS FFT INDUSTRIAL USE DESCRIPTION PACKAGE DIMENSIONS This product is P-Channei MOS Field Effect Transistor in millimeter designed for DC/DC converter and power management
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980pF
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2SK2133
Abstract: 2SK2133-Z MP-25
Text: DATA SHEET MOS FIELD EFFECT POWER TRANSISTORS 2SK2133, 2SK2133-Z SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE PACKAGE DIMENSIONS DESCRIPTION The 2SK2133, 2SK2133-Z are N-channel Power MOS Field Effect Unit : mm Transistors designed for high voltage switching applications.
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2SK2133,
2SK2133-Z
2SK2133
MP-25
O-220AB)
2SK2133-Z
2SK2133
MP-25
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SK2134
Abstract: 2SK2134 SK213 2SK2134-Z MP-25 NEC 2sk2134
Text: MOS FIELD EFFECT POWER TRANSISTORS 2SK2134, 2SK2134-Z SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION The 2SK2134, 2SK2134-Z are N-channel Power MOS Field Effect Transistors designed for high voltage switching applications. FEATURES • Low On-state Resistance
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2SK2134,
2SK2134-Z
2SK2134-Z
IEI-1209)
SK2134
2SK2134
SK213
MP-25
NEC 2sk2134
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093.216
Abstract: 2sk2974 093.941 transistor 2sk2974
Text: MITSUBISHI RF POWER MOS FET 2SK2974 SILICON MOS FET TYPE DESCRIPTION OUTLINE DRAWING Dimensions in mm 2SK2974 is a MOS FET type transistor specifically designed for VHF/UHF power amplifiers applications. INDEX MARK BOTTOM (TOP) FEATURES • High power gain:Gpe>8.4dB
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2SK2974
2SK2974
450MHz
30dBm
600mA
093.216
093.941
transistor 2sk2974
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Untitled
Abstract: No abstract text available
Text: DATA SHEET NEC MOS FIELD EFFECT POWER TRANSISTORS ¿ ¿ P A 1752 SWITCHING DUAL N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION PACKAGE DIMENSIONS in: millimeter This product is Dual N-Channei MOS Field Ef fect Transistor designed for power management
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nec DI 392
Abstract: 25L95 2SK2135 MEI-1202 TEA-1035
Text: DATA SHEET NEC M S I MOS FIELD EFFECT POWER TRANSISTOR 2SK2135 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION PACKAGE DIMENSIONS The 2SK2135 is N-channel Power MOS Field Effect Tran in millimeters sistor designed for high voltage switching applications.
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2SK2135
IEI-1209)
nec DI 392
25L95
MEI-1202
TEA-1035
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A1701
Abstract: nec 701 NEC 710
Text: DATA SHEET MOS Field Effect Power Transistors _ ¿¿PA1701 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION PACKAGE DIM ENSIONS This product is N-Channel MOS Field Effect Transistor in m illim eter designed for power managem ent applications of note
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uPA1701
A1701
nec 701
NEC 710
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2SK2973
Abstract: 165082 mf 102 fet equivalent hd 9729 transistor t 2190 GR40-220 ic 7448 marking c7 sot-89 75458 88284
Text: MITSUBISHI RF POWER MOS FET 2SK2973 SILICON MOS FET TYPE DESCRIPTION 2SK2973 is a MOS FET type transistor specifically designed for VHF/UHF power amplifiers applications. FEATURES * High power gain:Gpe>13dB « VDD=9.6V,f=450MHz,Pin= 17dBm * High efficiency:55% typ.
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2SK2973
2SK2973
450MHz
17dBm
OT-89
OT-89
Conditi38
165082
mf 102 fet equivalent
hd 9729
transistor t 2190
GR40-220
ic 7448
marking c7 sot-89
75458
88284
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Untitled
Abstract: No abstract text available
Text: _ DATA SHEET_ MOS FIELD EFFECT POWER TRANSISTORS 2SJ494 SWITCHING P-CHANNEL POWER MOS FET INDUSTRIAL USE PACKAGE DIMENSIONS DESCRIPTION in millimeter This product is P-Channel MOS Field Effect Transistor designed for high current switching applications.
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2SJ494
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