Untitled
Abstract: No abstract text available
Text: HITACHI PF0348 Series MOS FET Power Amplifier Module for UHF Band HITACHI ADE-208-343C Z 3rd. Edition December, 1996 Features • Small package: 30 x 10 x 5.9mm • Low operation voltage: 7W at 7.2V
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PF0348
ADE-208-343C
200jiA
PF0349
PF0350
PF0351
PF0352
PF0353
360MHz
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3SK196
Abstract: Marking G1s
Text: H ITACH I 3SK196-Silicon N Channel Dual Gate MOS FET VHF/UHF TV Tuner RF Amplifier Features MPAK-4 • Compact package. • Low noise amplifier for VHF to UHF band, capable of RF amplifier for CATV wide band tuner. 2 Table 1 Absolute Maximum Ratings
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3SK196----------Silicon
3SK196
3SK196
Marking G1s
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3SK196
Abstract: mos fet uhf low power NF 028
Text: 3SK196 Silicon N Channel Dual Gate MOS FET VHF/UHF TV Tuner RF Amplifier Features MPAK-4 • Compact package. • Low noise amplifier for VHF to UHF band, capable of RF amplifier for CATV wide band tuner. 2 Table 1 Absolute Maximum Ratings Ta = 25°C Item
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3SK196
3SK196
mos fet uhf low power
NF 028
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PF0348
Abstract: PF0349 PF0350 PF0351 PF0352 PF0353 Hitachi DSA0046
Text: PF0348 Series MOS FET Power Amplifier Module for UHF Band ADE-208-343C Z 4th. Edition December, 1996 Features • Small package:30 x 10 × 5.9mm • Low operation voltage: 7W at 7.2V • Low power control current: 200µA Typ Ordering Infomation Type. name
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PF0348
ADE-208-343C
PF0348
360MHz
PF0349
430MHz
PF0350
470MHz
PF0351
490MHz
PF0349
PF0350
PF0351
PF0352
PF0353
Hitachi DSA0046
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Load VSWR tolerance
Abstract: PF0350 PF0348 PF0349 PF0351 PF0352 PF0353 ADE-208-343C 68w fet Hitachi DSA00304
Text: PF0348 Series MOS FET Power Amplifier Module for UHF Band ADE-208-343C Z 3rd. Edition December, 1996 Features • Small package:30 x 10 × 5.9mm • Low operation voltage: 7W at 7.2V • Low power control current: 200µA Typ Ordering Infomation Type. name
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PF0348
ADE-208-343C
PF0348
360MHz
PF0349
430MHz
PF0350
470MHz
PF0351
490MHz
Load VSWR tolerance
PF0350
PF0349
PF0351
PF0352
PF0353
ADE-208-343C
68w fet
Hitachi DSA00304
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Untitled
Abstract: No abstract text available
Text: PF0341A Series MOS FET Power Amplifier Module for UHF Band HITACHI Features • Small package: 30 x 10 x 5.9 mm • High output power at low voltage: 2 W Typ at 4.8 V • Low power control current: 200 ¡lA Typ Ordering Information Type Name Operating Frequency
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PF0341A
PF0341A
PF0342A
PF0343A
PF0344A
PF0345A
ADE-208-338C
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Untitled
Abstract: No abstract text available
Text: PF0348 Series MOS FET Power Amplifier Module for UHF Band HITACHI ADE-208-343C Z 4th Edition December 1996 Features • Small package: 30 x 10 x 5.9 mm • Low operation voltage: 7 W at 7.2 V • Low power control current: 200 ¡lA Typ Ordering Information
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PF0348
ADE-208-343C
PF0348
PF0349
PF0350
PF0351
PF0352
PF0353
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PF0350
Abstract: Hitachi DSA0096 PF0348 PF0349 PF0351 PF0352 PF0353
Text: PF0348 Series MOS FET Power Amplifier Module for UHF Band ADE-208-343C Z 4th Edition December 1996 Features • Small package: 30 x 10 × 5.9 mm • Low operation voltage: 7 W at 7.2 V • Low power control current: 200 µA Typ Ordering Information Type Name
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PF0348
ADE-208-343C
PF0348
PF0349
PF0350
PF0351
PF0352
PF0353
D-85622
PF0350
Hitachi DSA0096
PF0349
PF0351
PF0352
PF0353
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Hitachi DSA002759
Abstract: No abstract text available
Text: 3SK297 Silicon N-Channel Dual Gate MOS FET ADE-208-389 1st. Edition Application UHF / VHF RF amplifier Features • Low noise figure. NF = 1.0 dB typ. at f = 200 MHz • Capable of low voltage operation Outline 3SK297 Absolute Maximum Ratings Ta = 25°C
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3SK297
ADE-208-389
Hitachi DSA002759
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Hitachi DSA002759
Abstract: No abstract text available
Text: 3SK298 Silicon N-Channel Dual Gate MOS FET ADE-208-390 1st. Edition Application UHF / VHF RF amplifier Features • Low noise figure. NF = 1.0 dB typ. at f = 200 MHz • Capable of low voltage operation Outline 3SK298 Absolute Maximum Ratings Ta = 25°C
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3SK298
ADE-208-390
Hitachi DSA002759
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3SK318
Abstract: DSA003643
Text: 3SK318 Silicon N-Channel Dual Gate MOS FET UHF RF Amplifier ADE-208-600 Z 1st. Edition Feb. 1998 Features • Low noise characteristics; (NF= 1.4 dB typ. at f= 900 MHz) • Excellent cross modulation characteristics • Capable low voltage operation; +B= 5V
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3SK318
ADE-208-600
3SK318
DSA003643
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3SK235
Abstract: No abstract text available
Text: HITACHI 3SK235-Silicon N Channel Dual Gate MOS FET UHF/VHF TV Tuner RF Amplifier Features MPAK-4 • Low voltage operation. • High gain, low noise. Table 1 Absolute Maximum Ratings Ta = 25°C Item Symbol Rating Unit Drain to source voltage VDS
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3SK235------------Silicon
3SK235
3SK235
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3SK319
Abstract: Hitachi DSA002759
Text: 3SK319 Silicon N-Channel Dual Gate MOS FET UHF RF Amplifier ADE-208-602 Z 1st. Edition February 1998 Features • Low noise characteristics; (NF= 1.4 dB typ. at f= 900 MHz) • Excellent cross modulation characteristics • Capable low voltage operation; +B= 5V
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3SK319
ADE-208-602
3SK319
Hitachi DSA002759
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marking is "yb-"
Abstract: Hitachi DSA002759
Text: 3SK318 Silicon N-Channel Dual Gate MOS FET UHF RF Amplifier ADE-208-600 Z 1st. Edition February 1998 Features • Low noise characteristics; (NF= 1.4 dB typ. at f= 900 MHz) • Excellent cross modulation characteristics • Capable low voltage operation; +B= 5V
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3SK318
ADE-208-600
marking is "yb-"
Hitachi DSA002759
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3SK319
Abstract: ADE-208-602 DSA003643
Text: 3SK319 Silicon N-Channel Dual Gate MOS FET UHF RF Amplifier ADE-208-602 Z 1st. Edition Feb. 1998 Features • Low noise characteristics; (NF= 1.4 dB typ. at f= 900 MHz) • Excellent cross modulation characteristics • Capable low voltage operation; +B= 5V
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3SK319
ADE-208-602
3SK319
ADE-208-602
DSA003643
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3SK319
Abstract: ADE-208-602 Hitachi DSA00395
Text: 3SK319 Silicon N-Channel Dual Gate MOS FET UHF RF Amplifier ADE-208-602 Z 1st. Edition February 1998 Features • Low noise characteristics; (NF= 1.4 dB typ. at f= 900 MHz) • Excellent cross modulation characteristics • Capable low voltage operation; +B= 5V
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3SK319
ADE-208-602
3SK319
Hitachi DSA00395
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PF0340A
Abstract: BL01RN1-A62 MURATA MW 20 PF0341A PF0342A PF0343A PF0344A PF0345A Hitachi DSA00221 Hitachi DSA00221025
Text: PF0341A Series MOS FET Power Amplifier Module for UHF Band ADE-208-338C Z 4th. Edition July 1996 Features • Small package: 30 x 10 × 5.9 mm • High output power at low voltage: 2 W Typ at 4.8 V • Low power control current: 200 µA Typ Ordering Information
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PF0341A
ADE-208-338C
PF0341A
PF0342A
PF0343A
PF0344A
PF0345A
PF0340A
BL01RN1-A62
MURATA MW 20
PF0342A
PF0343A
PF0344A
PF0345A
Hitachi DSA00221
Hitachi DSA00221025
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3SK143
Abstract: No abstract text available
Text: High Frequency FETs 3SK143 Silicon N-Channel 4-pin MOS FET For UHF high-gain and low-noise amplification unit: mm +0.2 2.8 –0.3 • Features +0.2 0.65±0.15 ● Low noise-figure NF ● Large power gain PG ● Mini-type package, allowing downsizing of the sets and automatic
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3SK143
800MHz
3SK143
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PF0340A
Abstract: PF0343A Hitachi DSA0096 BL01RN1-A62 PF0341A PF0342A PF0344A PF0345A PF034
Text: PF0341A Series MOS FET Power Amplifier Module for UHF Band ADE-208-338C Z 4th Edition July 1996 Features • Small package: 30 x 10 × 5.9 mm • High output power at low voltage: 2 W Typ at 4.8 V • Low power control current: 200 µA Typ Ordering Information
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PF0341A
ADE-208-338C
PF0341A
PF0342A
PF0343A
PF0344A
PF0345A
D-85622
PF0340A
PF0343A
Hitachi DSA0096
BL01RN1-A62
PF0342A
PF0344A
PF0345A
PF034
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PF0340A
Abstract: PF0341A PF0342A BL01RN1-A62 PF0343A PF0344A PF0345A Hitachi DSA00311
Text: PF0341A Series MOS FET Power Amplifier Module for UHF Band ADE-208-338C Z 4th. Edition July 1996 Features • Small package: 30 x 10 × 5.9 mm • High output power at low voltage: 2 W Typ at 4.8 V • Low power control current: 200 µA Typ Ordering Information
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PF0341A
ADE-208-338C
PF0341A
PF0342A
PF0343A
PF0344A
PF0345A
PF0340A
PF0342A
BL01RN1-A62
PF0343A
PF0344A
PF0345A
Hitachi DSA00311
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bl01rn1-a62-001
Abstract: BL01RN1-A62
Text: HITACHI PF0341A Series MOS FET Power Amplifier Module for UHF Band HITACHI ADE-208-338C Z 4th. Edition July 1996 Features • Small package: 30 x 10 x 5.9 mm • High output power at low voltage: 2 W Typ at 4.8 V • Low power control current: 200 |iA Typ
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PF0341A
ADE-208-338C
PF0342A
PF0343A
PF0344A
PF0345A
BL01RN1-A62-001
bl01rn1-a62-001
BL01RN1-A62
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3SK296ZQ-TL-E
Abstract: 3SK296 3sk296zq SC82A
Text: 3SK296 Silicon N-Channel Dual Gate MOS FET REJ03G0815-0300 Previous ADE-208-388A Rev.3.00 Aug.10.2005 Application UHF RF amplifier Features • Low noise figure. NF = 2.0 dB Typ. at f = 900 MHz • Capable of low voltage operation Outline RENESAS Package code: PTSP0004ZA-A
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3SK296
REJ03G0815-0300
ADE-208-388A)
PTSP0004ZA-A
3SK296ZQ-TL-E
3SK296
3sk296zq
SC82A
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Hitachi DSA002759
Abstract: No abstract text available
Text: 3SK317 Silicon N-Channel Dual Gate MOS FET UHF / VHF RF Amplifier ADE-208-778 Z 1st. Edition Mar. 1999 Features • Low noise characteristics; (NF = 1.0 dB typ. at f = 200 MHz) • High power gain characteristics ; (PG = 27.6 dB typ. at f = 200 MHz) Outline
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3SK317
ADE-208-778
Hitachi DSA002759
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Hitachi DSA002759
Abstract: No abstract text available
Text: 3SK295 Silicon N-Channel Dual Gate MOS FET ADE-208-387 1st. Edition Application UHF RF amplifier Features • Low noise figure. NF = 2.0 dB typ. at f = 900 MHz • Capable of low voltage operation Outline 3SK295 Absolute Maximum Ratings Ta = 25°C Item Symbol
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3SK295
ADE-208-387
Hitachi DSA002759
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