MOS FET MODULE SILICON Search Results
MOS FET MODULE SILICON Result Highlights (5)
| Part | ECAD Model | Manufacturer | Description | Download | Buy |
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| MG400Q2YMS3 |
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N-ch SiC MOSFET Module, 1200 V, 400 A, 2-153A1A |
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| MG800FXF2YMS3 |
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N-ch SiC MOSFET Module, 3300 V, 800 A, iXPLV |
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| MG250V2YMS3 |
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N-ch SiC MOSFET Module, 1700 V, 250 A, 2-153A1A |
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| MG250YD2YMS3 |
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N-ch SiC MOSFET Module, 2200 V, 250 A, 2-153A1A |
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| MG800FXF1JMS3 |
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N-ch SiC MOSFET Module, 3300 V, 800 A, iXPLV, High-side: SiC SBD、Low-side: SiC MOSFET |
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MOS FET MODULE SILICON Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
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Contextual Info: 2MI50F-050 F U JI POWER M O S -FET B11 . NCHANNEL SILICON POWER MOS-FET ^ „ _ - ^ ^ _ —- MOS-FET MODULE • Features ■Outline Drawings • l ow on-resistance • High current 7? • hsulated to elements and metal base • Separated two-elements |
OCR Scan |
2MI50F-050 | |
Diode L2N
Abstract: 2MI50F-050 ti2k 1x100
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OCR Scan |
2MI50F-050 Diode L2N 2MI50F-050 ti2k 1x100 | |
Low Capacitance MOS FET
Abstract: Hitachi DSA00103 DIODE DATABOOK PM5050J dr 25 diode
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PM5050J 093/PM5050J Low Capacitance MOS FET Hitachi DSA00103 DIODE DATABOOK PM5050J dr 25 diode | |
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Contextual Info: • 44^205 ODlBbbS PM 5<V 75N -HITACHI/ OPTOELECTRONICS 47fl ■ HIT4 Preliminary LIE D SILICON N-CHANNEL POWER MOS FET MODULE HIGH SPEED POWER SWITCHING ■ FEATURES • Equipped with Power MOS FET • Low On-Resistance • High Speed Switching |
OCR Scan |
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MP6101
Abstract: n channel fet array
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OCR Scan |
MP6101 300yA Ta-25 Drain940 100/i MP6101 n channel fet array | |
diode 2JC
Abstract: 4S125
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OCR Scan |
DD13t PM4550N---------------HITACHI/ diode 2JC 4S125 | |
PM45302F
Abstract: Hitachi DSA00309
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PM45302F PM45302F Hitachi DSA00309 | |
4575NContextual Info: blE D • H4Tb205 DD13t,S7 3T1 ■ H I T l4 PM4575N Preliminary HITACHI/ OPTO ELECTRON ICS SILICON N-CHANNEL POWER MOS FET MODULE HIGH SPEED POWER SWITCHING ■ FEATURES • Equipped with Power MOS FET • Low On-Resistance • High Speed Switching • |
OCR Scan |
H4Tb205 DD13t PM4575N 4575N | |
PM50100K
Abstract: Hitachi DSA00311
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Original |
PM50100K PM50100K Hitachi DSA00311 | |
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Contextual Info: PM45100K Silicon N-Channel Power MOS FET Module HITACHI Application High Speed Power Switching Features • • • • • • • • Equipped with Power MOS FET Low on-resistance High speed switching Low drive current Wide area of safe operation Inherent parallel diode between source and drain |
OCR Scan |
PM45100K PM451 | |
PM45302F
Abstract: Hitachi DSA001652
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Original |
PM45302F D-85622 PM45302F Hitachi DSA001652 | |
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Contextual Info: PM50302F Silicon N-Channel Power MOS FET Module HITACHI November 1996 Application High Speed Power Switching Features • Equipped with Power MOS FET • Low on-resistance • High speed switching • Low drive current • Wide area of safe operation • Inherent parallel diode between source and drain |
OCR Scan |
PM50302F D-85622 | |
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Contextual Info: PM50100K Silicon N-Channel Power MOS FET Module HITACHI November 1996 Application High Speed Power Switching Features • Equipped with Power MOS FET • Low on-resistance • High speed switching • Low drive current • Wide area of safe operation • Inherent parallel diode between source and drain |
OCR Scan |
PM50100K D-85622 | |
PM50502C
Abstract: Hitachi DSA00309
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Original |
PM50502C PM50502C Hitachi DSA00309 | |
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PM5075J
Abstract: Hitachi DSA00311
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Original |
PM5075J PM5075J Hitachi DSA00311 | |
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Contextual Info: PM4575J Silicon N-Channel Power MOS FET Module HITACHI November 1996 Application High Speed Power Switching Features • Equipped with Power MOS FET • Low on-resistance • High speed switching • Low drive current • Wide area of safe operation • Inherent parallel diode between source and drain |
OCR Scan |
PM4575J 110in | |
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Contextual Info: PM45302F Silicon N-Channel MOS FET Module HITACHI November 1996 Application High Speed Power Switching Features • Equipped with Power MOS FET • Low on-resistance • High speed switching • Low drive current • Wide area of safe operation • Inherent parallel diode between source and drain |
OCR Scan |
PM45302F D-85622 | |
Hitachi DSA00263
Abstract: PM4575J PM5075J
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PM4575J termi2000 D-85622 Hitachi DSA00263 PM4575J PM5075J | |
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Contextual Info: PM45100K Silicon N-Channel Power MOS FET Module HITACHI November 1996 Application High Speed Power Switching Features • Equipped with Power MOS FET • Low on-resistance • High speed switching • Low drive current • Wide area of safe operation • Inherent parallel diode between source and drain |
OCR Scan |
PM45100K D-85622 | |
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Contextual Info: PM4550J Silicon N-Channel Power MOS FET Module HITACHI November 1996 Application High Speed Power Switching Features • Equipped with Power MOS FET • Low on-resistance • High speed switching • Low drive current • Wide area of safe operation • Inherent parallel diode between source and drain |
OCR Scan |
PM4550J D-85622 | |
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Contextual Info: PM5075J Silicon N-Channel Power MOS FET Module HITACHI November 1996 Application High Speed Power Switching Features • Equipped with Power MOS FET • Low on-resistance • High speed switching • Low drive current • Wide area of safe operation • Inherent parallel diode between source and drain |
OCR Scan |
PM5075J D-85622 | |
4600 fet
Abstract: PM50150K Hitachi DSA00311
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Original |
PM50150K 4600 fet PM50150K Hitachi DSA00311 | |
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Contextual Info: PM50150K Silicon N-Channel Power MOS FET Module HITACHI Application High Speed Power Switching Features • • • • • • • • Equipped with Power MOS FET Low on-resistance High speed switching Low drive current Wide area of safe operation Inherent parallel diode between source and drain |
OCR Scan |
PM50150K | |
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Contextual Info: PM5075J Silicon N-Channel Power MOS FET Module HITACHI Application High Speed Power Switching Features • • • • • • • • Equipped with Power MOS FET Low on-resistance High speed switching Low drive current Wide area of safe operation Inherent parallel diode between source and drain |
OCR Scan |
PM5075J | |