MOS FET MODULE SILICON Search Results

MOS FET MODULE SILICON Result Highlights (5)

Part	Manufacturer	Description
MG400Q2YMS3	Toshiba Electronic Devices & Storage Corporation	N-ch SiC MOSFET Module, 1200 V, 400 A, 2-153A1A
MG800FXF2YMS3	Toshiba Electronic Devices & Storage Corporation	N-ch SiC MOSFET Module, 3300 V, 800 A, iXPLV
MG250V2YMS3	Toshiba Electronic Devices & Storage Corporation	N-ch SiC MOSFET Module, 1700 V, 250 A, 2-153A1A
MG250YD2YMS3	Toshiba Electronic Devices & Storage Corporation	N-ch SiC MOSFET Module, 2200 V, 250 A, 2-153A1A
MG800FXF1JMS3	Toshiba Electronic Devices & Storage Corporation	N-ch SiC MOSFET Module, 3300 V, 800 A, iXPLV, High-side: SiC SBD、Low-side: SiC MOSFET

MOS FET MODULE SILICON Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
Low Capacitance MOS FET Abstract: Hitachi DSA00103 DIODE DATABOOK PM5050J dr 25 diode Text: PM5050J Silicon N-Channel Power MOS FET Module { INCLUDEPICTURE "RG External:F-Drive PC shared :hitachi.eps" \* MERGEFORMAT } November 1996 Application High Speed Power Switching Features • • • • • • • • Equipped with Power MOS FET Low on-resistance	Original	PM5050J 093/PM5050J Low Capacitance MOS FET Hitachi DSA00103 DIODE DATABOOK PM5050J dr 25 diode	PDF
PM45302F Abstract: Hitachi DSA00309 Text: PM45302F Silicon N-Channel MOS FET Module Application High Speed Power Switching Features • • • • • • • • Equipped with Power MOS FET Low on-resistance High speed switching Low drive current Wide area of safe operation Inherent parallel diode between source and drain	Original	PM45302F PM45302F Hitachi DSA00309	PDF
PM50100K Abstract: Hitachi DSA00311 Text: PM50100K Silicon N-Channel Power MOS FET Module Application High Speed Power Switching Features • • • • • • • • Equipped with Power MOS FET Low on-resistance High speed switching Low drive current Wide area of safe operation Inherent parallel diode between source and drain	Original	PM50100K PM50100K Hitachi DSA00311	PDF
PM45302F Abstract: Hitachi DSA001652 Text: PM45302F Silicon N-Channel MOS FET Module November 1996 Application High Speed Power Switching Features • • • • • • • • Equipped with Power MOS FET Low on-resistance High speed switching Low drive current Wide area of safe operation Inherent parallel diode between source and drain	Original	PM45302F D-85622 PM45302F Hitachi DSA001652	PDF
PM50502C Abstract: Hitachi DSA00309 Text: PM50502C Silicon N-Channel Power MOS FET Module Application High Speed Power Switching Features • • • • • • • • Equipped with Power MOS FET Low on-resistance High speed switching Low drive current Wide area of safe operation Inherent parallel diode between source and drain	Original	PM50502C PM50502C Hitachi DSA00309	PDF
PM5075J Abstract: Hitachi DSA00311 Text: PM5075J Silicon N-Channel Power MOS FET Module Application High Speed Power Switching Features • • • • • • • • Equipped with Power MOS FET Low on-resistance High speed switching Low drive current Wide area of safe operation Inherent parallel diode between source and drain	Original	PM5075J PM5075J Hitachi DSA00311	PDF
Hitachi DSA00263 Abstract: PM4575J PM5075J Text: PM4575J Silicon N-Channel Power MOS FET Module Application High Speed Power Switching Features • • • • • • • • Equipped with Power MOS FET Low on-resistance High speed switching Low drive current Wide area of safe operation Inherent parallel diode between source and drain	Original	PM4575J termi2000 D-85622 Hitachi DSA00263 PM4575J PM5075J	PDF
4600 fet Abstract: PM50150K Hitachi DSA00311 Text: PM50150K Silicon N-Channel Power MOS FET Module Application High Speed Power Switching Features • • • • • • • • Equipped with Power MOS FET Low on-resistance High speed switching Low drive current Wide area of safe operation Inherent parallel diode between source and drain	Original	PM50150K 4600 fet PM50150K Hitachi DSA00311	PDF
Untitled Abstract: No abstract text available Text: 2MI50F-050 F U JI POWER M O S -FET B11 . NCHANNEL SILICON POWER MOS-FET ^ „ _ - ^ ^ _ —- MOS-FET MODULE • Features ■Outline Drawings • l ow on-resistance • High current 7? • hsulated to elements and metal base • Separated two-elements	OCR Scan	2MI50F-050	PDF
Diode L2N Abstract: 2MI50F-050 ti2k 1x100 Text: 2MI50F-050 FU JI POWER M OS-FET N-CHANNEL SILICON POWER MOS-FET MOS-FET MODULE • Features lOutline Drawings • l ow on-resistance • High current • hsulated to elements and metal base • Separated two-elements • hclude fast recovery diode 2-458 ■ Applications	OCR Scan	2MI50F-050 Diode L2N 2MI50F-050 ti2k 1x100	PDF
Untitled Abstract: No abstract text available Text: • 44^205 ODlBbbS PM 5<V 75N -HITACHI/ OPTOELECTRONICS 47fl ■ HIT4 Preliminary LIE D SILICON N-CHANNEL POWER MOS FET MODULE HIGH SPEED POWER SWITCHING ■ FEATURES • Equipped with Power MOS FET • Low On-Resistance • High Speed Switching	OCR Scan		PDF
MP6101 Abstract: n channel fet array Text: MP6101 POWER MOS FET MODULE SILICON N CHANNEL MOS TYPE 7T-MOS FET 6 IN 1 HIGH POWER SWITCHING APPLICATIONS. INDUSTRIAL APPLICATIONS MOTOR DRIVE APPLICATIONS. •Pack a g e w i t h Heat Sink Isolated Lead. . H i g h D rain P o wer Dissipation. : P T =120W	OCR Scan	MP6101 300yA Ta-25 Drain940 100/i MP6101 n channel fet array	PDF
diode 2JC Abstract: 4S125 Text: fcilE T> m 4ltclhEDS DD13t>53 75b « H i m PM4550N- Preliminary HITACHI/ OPTOELECTRONICS SILICON N-CHANNEL POWER MOS FET MODULE HIGH SPEED POWER SWITCHING • FEATURES • Equipped with Power MOS FET • Low On-Resistance • High Speed Switching	OCR Scan	DD13t PM4550N---------------HITACHI/ diode 2JC 4S125	PDF
4575N Abstract: No abstract text available Text: blE D • H4Tb205 DD13t,S7 3T1 ■ H I T l4 PM4575N Preliminary HITACHI/ OPTO ELECTRON ICS SILICON N-CHANNEL POWER MOS FET MODULE HIGH SPEED POWER SWITCHING ■ FEATURES • Equipped with Power MOS FET • Low On-Resistance • High Speed Switching •	OCR Scan	H4Tb205 DD13t PM4575N 4575N	PDF

Untitled Abstract: No abstract text available Text: PM50302F Silicon N-Channel Power MOS FET Module HITACHI November 1996 Application High Speed Power Switching Features • Equipped with Power MOS FET • Low on-resistance • High speed switching • Low drive current • Wide area of safe operation • Inherent parallel diode between source and drain	OCR Scan	PM50302F D-85622	PDF
Untitled Abstract: No abstract text available Text: PM50100K Silicon N-Channel Power MOS FET Module HITACHI November 1996 Application High Speed Power Switching Features • Equipped with Power MOS FET • Low on-resistance • High speed switching • Low drive current • Wide area of safe operation • Inherent parallel diode between source and drain	OCR Scan	PM50100K D-85622	PDF
Untitled Abstract: No abstract text available Text: PM5050J Silicon N-Channel Power MOS FET Module HITACHI November 1996 Application High Speed Power Switching Features • Equipped with Power MOS FET • Low on-resistance • High speed switching • Low drive current • Wide area of safe operation • Inherent parallel diode between source and drain	OCR Scan	PM5050J D-85622	PDF
Untitled Abstract: No abstract text available Text: PM4575J Silicon N-Channel Power MOS FET Module HITACHI November 1996 Application High Speed Power Switching Features • Equipped with Power MOS FET • Low on-resistance • High speed switching • Low drive current • Wide area of safe operation • Inherent parallel diode between source and drain	OCR Scan	PM4575J 110in	PDF
Untitled Abstract: No abstract text available Text: PM45302F Silicon N-Channel MOS FET Module HITACHI November 1996 Application High Speed Power Switching Features • Equipped with Power MOS FET • Low on-resistance • High speed switching • Low drive current • Wide area of safe operation • Inherent parallel diode between source and drain	OCR Scan	PM45302F D-85622	PDF
Untitled Abstract: No abstract text available Text: PM45100K Silicon N-Channel Power MOS FET Module HITACHI November 1996 Application High Speed Power Switching Features • Equipped with Power MOS FET • Low on-resistance • High speed switching • Low drive current • Wide area of safe operation • Inherent parallel diode between source and drain	OCR Scan	PM45100K D-85622	PDF
Untitled Abstract: No abstract text available Text: PM4550J Silicon N-Channel Power MOS FET Module HITACHI November 1996 Application High Speed Power Switching Features • Equipped with Power MOS FET • Low on-resistance • High speed switching • Low drive current • Wide area of safe operation • Inherent parallel diode between source and drain	OCR Scan	PM4550J D-85622	PDF
Untitled Abstract: No abstract text available Text: PM5075J Silicon N-Channel Power MOS FET Module HITACHI November 1996 Application High Speed Power Switching Features • Equipped with Power MOS FET • Low on-resistance • High speed switching • Low drive current • Wide area of safe operation • Inherent parallel diode between source and drain	OCR Scan	PM5075J D-85622	PDF
Untitled Abstract: No abstract text available Text: PM50150K Silicon N-Channel Power MOS FET Module HITACHI Application High Speed Power Switching Features • • • • • • • • Equipped with Power MOS FET Low on-resistance High speed switching Low drive current Wide area of safe operation Inherent parallel diode between source and drain	OCR Scan	PM50150K	PDF
Untitled Abstract: No abstract text available Text: PM5075J Silicon N-Channel Power MOS FET Module HITACHI Application High Speed Power Switching Features • • • • • • • • Equipped with Power MOS FET Low on-resistance High speed switching Low drive current Wide area of safe operation Inherent parallel diode between source and drain	OCR Scan	PM5075J	PDF

MOS FET MODULE SILICON Search Results

MOS FET MODULE SILICON Result Highlights (5)

MOS FET MODULE SILICON Datasheets Context Search

Low Capacitance MOS FET

PM45302F

PM50100K

PM45302F

PM50502C

PM5075J

Hitachi DSA00263

4600 fet

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Diode L2N

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MP6101

diode 2JC

4575N

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