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    MOS FET 120V 10A Search Results

    MOS FET 120V 10A Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TCK424G Toshiba Electronic Devices & Storage Corporation MOSFET Gate Driver IC, 2.7 to 28 V, External MOSFET Gate drive / Inrush current reducing, WCSP6G Visit Toshiba Electronic Devices & Storage Corporation
    TCK425G Toshiba Electronic Devices & Storage Corporation MOSFET Gate Driver IC, 2.7 to 28 V, External MOSFET Gate drive / Inrush current reducing, WCSP6G Visit Toshiba Electronic Devices & Storage Corporation
    TCK423G Toshiba Electronic Devices & Storage Corporation MOSFET Gate Driver IC, 2.7 to 28 V, External MOSFET Gate drive / Inrush current reducing, WCSP6G Visit Toshiba Electronic Devices & Storage Corporation
    TCK422G Toshiba Electronic Devices & Storage Corporation MOSFET Gate Driver IC, 2.7 to 28 V, External MOSFET Gate drive / Inrush current reducing, WCSP6G Visit Toshiba Electronic Devices & Storage Corporation
    MG800FXF1JMS3 Toshiba Electronic Devices & Storage Corporation N-ch SiC MOSFET Module, 3300 V, 800 A, iXPLV, High-side: SiC SBD、Low-side: SiC MOSFET Visit Toshiba Electronic Devices & Storage Corporation

    MOS FET 120V 10A Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    fkp253

    Abstract: No abstract text available
    Text: N-Channel MOS FET FKP253 June, 2007 Features Package-FM20 TO220 Full Mold Low on-resistance Low input capacitance Avalanche energy capability guaranteed Applications PDP driving High speed switching Equivalent circuit D (2) G (1) S (3) Absolute maximum ratings


    Original     		FKP253 Package---FM20 T02-009EA-070531 fkp253 PDF

    Untitled

    Abstract: No abstract text available
    Text: MOS FET SKP253 December 2005 Package-TO-263 Features • Low on-resistance • Low input capacitance • Avalanche energy capability guaranteed Applications • PDP driving • High speed switching Equivalent circuit D 2 G (1) S (3) Absolute maximum ratings


    Original     		SKP253 Package---TO-263 T02-004EA-051124 PDF

    omron p7tf-OS16-1

    Abstract: P7TF-OS16 omron relay omron G7T-1112S relay 24v omron omron p7tf G7TC-OC16 G7TC-IA16-5 omron relay module 24 dc G79-A200C
    Text: R Relay I/O Blocks G7jj Consolidate Wiring and Reduce Installation Time H Omron relay I/O blocks provide high performance switching used with controllers from any manufacturer H G7TC blocks come with G7T input or output relays installed 16-point models measure 180 W x 85 H x 68 D mm


    Original     		16-point 10-amp) G79-Y100C G79-Y150C G79-Y200C G79-Y300C G79-Y500C G79-A200C G79-A500C omron p7tf-OS16-1 P7TF-OS16 omron relay omron G7T-1112S relay 24v omron omron p7tf G7TC-OC16 G7TC-IA16-5 omron relay module 24 dc G79-A200C PDF

    Untitled

    Abstract: No abstract text available
    Text: MOS FET SKP253 December 2005 •Package-TO-263 ■Features • Low on-resistance • Low input capacitance • Avalanche energy capability guaranteed ■Applications • PDP driving • High speed switching ■Equivalent circuit D 2 G (1) S (3) Absolute maximum ratings


    Original     		SKP253 Package---TO-263 PW100s, T02-004EA-051124 PDF

    SKP253

    Abstract: 051124 mos fet 120v 10A sanken power transistor B105 CF35
    Text: MOS FET SKP253 December 2005 •Package-TO-263 ■Features • Low on-resistance • Low input capacitance • Avalanche energy capability guaranteed ■Applications • PDP driving • High speed switching ■Equivalent circuit D 2 G (1) S (3) Absolute maximum ratings


    Original     		SKP253 Package---TO-263 T02-004EA-051124 SKP253 051124 mos fet 120v 10A sanken power transistor B105 CF35 PDF

    Package-FM20

    Abstract: fkp*253 FKP253 fet t02
    Text: N-Channel MOS FET FKP253 •Features June, 2007 ■Package-FM20 TO220 Full Mold ●Low on-resistance ●Low input capacitance ●Avalanche energy capability guaranteed ■Applications ●PDP driving ●High speed switching ■Equivalent circuit D (2) G (1)


    Original     		FKP253 Package---FM20 PW100sduty 740HILp T02-009EA-070531 Package-FM20 fkp*253 FKP253 fet t02 PDF

    FKP253

    Abstract: Package-FM20 mos n fet e sanken power transistor B105 CF35 FM20 DC switching 60V 10A FET
    Text: N-Channel MOS FET FKP253 •Features June, 2007 ■Package-FM20 TO220 Full Mold ●Low on-resistance ●Low input capacitance ●Avalanche energy capability guaranteed ■Applications ●PDP driving ●High speed switching ■Equivalent circuit D (2) G (1)


    Original     		FKP253 Package---FM20 T02-009EA-070531 FKP253 Package-FM20 mos n fet e sanken power transistor B105 CF35 FM20 DC switching 60V 10A FET PDF

    Untitled

    Abstract: No abstract text available
    Text: MOS FET SKP253 December 2005 •Package-TO-263 ■Features • Low on-resistance • Low input capacitance • Avalanche energy capability guaranteed ■Applications • PDP driving • High speed switching ■Equivalent circuit D 2 G (1) S (3) Absolute maximum ratings


    Original     		SKP253 Package---TO-263 PW100s, T02-004EA-051124 PDF

    mos fet 120v 10A

    Abstract: No abstract text available
    Text: 2SK3513-01L,S,SJ FUJI POWER MOSFET N-CHANNEL SILICON POWER MOSFET Super FAP-G Series Outline Drawings Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof P4 Applications Switching regulators UPS Uninterruptible Power Supply


    Original     		2SK3513-01L mos fet 120v 10A PDF

    AN1001

    Abstract: EIA-541 F7101 IRF7101 MS-012AA
    Text: PD - 95349A IRF7494PbF HEXFET Power MOSFET Applications l High frequency DC-DC converters l Lead-Free VDSS RDS on max 44m:@VGS = 10V 150V Benefits l Low Gate to Drain Charge to Reduce Switching Losses l Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See


    Original     		5349A IRF7494PbF AN1001) AN1001 EIA-541 F7101 IRF7101 MS-012AA PDF

    AN1001

    Abstract: EIA-541 F7101 IRF7101 MS-012AA
    Text: PD - 95349 IRF7494PbF HEXFET Power MOSFET Applications l High frequency DC-DC converters l Lead-Free VDSS RDS on max 44m:@VGS = 10V 150V Benefits l Low Gate to Drain Charge to Reduce Switching Losses l Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See


    Original     		IRF7494PbF AN1001) AN1001 EIA-541 F7101 IRF7101 MS-012AA PDF

    IRF7494

    Abstract: IRF AN1001 AN1001 EIA-541 F7101 IRF7101 MS-012AA
    Text: PD - 94641A IRF7494 HEXFET Power MOSFET Applications l High frequency DC-DC converters VDSS RDS on max 44m:@VGS = 10V 150V Benefits l Low Gate to Drain Charge to Reduce Switching Losses l Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See


    Original     		4641A IRF7494 AN1001) IRF7494 IRF AN1001 AN1001 EIA-541 F7101 IRF7101 MS-012AA PDF

    Untitled

    Abstract: No abstract text available
    Text: PD-95274 IRF7465PbF SMPS MOSFET HEXFET Power MOSFET Applications High frequency DC-DC converters l Lead-Free VDSS l Benefits Low Gate to Drain Charge to Reduce Switching Losses l Fully Characterized Capacitance Including Effective COSS to Simplify Design See


    Original     		PD-95274 IRF7465PbF AN1001) EIA-481 EIA-541. PDF

    AN1001

    Abstract: EIA-541 F7101 IRF7101
    Text: PD-95274 IRF7465PbF SMPS MOSFET HEXFET Power MOSFET Applications High frequency DC-DC converters l Lead-Free VDSS l Benefits Low Gate to Drain Charge to Reduce Switching Losses l Fully Characterized Capacitance Including Effective COSS to Simplify Design See


    Original     		PD-95274 IRF7465PbF AN1001) EIA-481 EIA-541. AN1001 EIA-541 F7101 IRF7101 PDF

    rjh3047

    Abstract: rjh3077 rjp3047 RJH3047DPK rjp3049 rjp6065 rjp3053 RJP3042 smd code FX mosfet RJP6055
    Text: 2007.12 Renesas Discrete General Catalog Transistor/Diode/ Triac/ Thyristor www.renesas.com Triacs and Thyristors Small-Signal Transistors Power Transistor Renesas discrete devices: extending the limits Advanced electronic equipment requires larger data processing


    Original     		REJ01G0001-0400 rjh3047 rjh3077 rjp3047 RJH3047DPK rjp3049 rjp6065 rjp3053 RJP3042 smd code FX mosfet RJP6055 PDF

    Untitled

    Abstract: No abstract text available
    Text: 2SK3688-01L,S,SJ FUJI POWER MOSFET 200311 N-CHANNEL SILICON POWER MOSFET Super FAP-G Series Outline Drawings [mm] Features High speed switching No secondary breadown Avalanche-proof Low on-resistance Low driving power Applications Switching regulators DC-DC converters


    Original     		2SK3688-01L PDF

    RJP63k2

    Abstract: rjp63f3 rjp30e2 RJP30H2 RJJ0319DSP rjp63f RJP30H3 rjj0319 BCR1AM-12A equivalent RJJ0606
    Text: 2011.01 Renesas Discrete Transistor / Diode / Triac / Thyristor General Catalog www.renesas.com Power MOSFETs Thyristors/TRIACs Solutions from the new Renesas. Reducing the power consumption of the most advanced applications. Bipolar Transistors for Switching


    Original     		R07CS0003EJ0100 RJP63k2 rjp63f3 rjp30e2 RJP30H2 RJJ0319DSP rjp63f RJP30H3 rjj0319 BCR1AM-12A equivalent RJJ0606 PDF

    uc3854 3kw pfc

    Abstract: uc3854 Application Note Power Factor Correction With the UC3854 2kw pfc uc3854 3kw PFC 3kw APT9901 UNITRODE Claudio de Sa e Silva 3.5kw pfc 3kw uc3854
    Text: APPLICATION NOTE APT9901 By: Kenneth Dierberger Denis Grafham OPTIMIZING THE DESIGN OF 3.5kW SINGLE-MOSFET POWER FACTOR CORRECTORS 1 APT9901 Optimizing The Design of 3.5kW Single-MOSFET Power Factor Correctors Kenneth Dierberger, Technical Marketing Manager


    Original     		APT9901 B-1330 uc3854 3kw pfc uc3854 Application Note Power Factor Correction With the UC3854 2kw pfc uc3854 3kw PFC 3kw APT9901 UNITRODE Claudio de Sa e Silva 3.5kw pfc 3kw uc3854 PDF

    uc3854 3kw pfc

    Abstract: UNITRODE Claudio de Sa e Silva PFC 3kw Power Factor Correction with the UC3854 2kw pfc sc265 triac 2kw uc3854 3kw uc3854 UC3854 for PFC 3.5kw 3.5kw pfc
    Text: APT9901 By Kenneth Dierberger and Denis Grafham OPTIMIZING THE DESIGN OF 3.5KW SINGLE-MOSFET POWER FACTOR CORRECTORS OPTIMIZING THE DESIGN OF 3.5KW SINGLE-MOSFET POWER FACTOR CORRECTORS Kenneth Dierberger, Manager Technical Marketing, Advanced PowerTechnology, 405 S.W. Columbia St., Bend, OR 97702, USA


    Original     		APT9901 B-1330 UC3854" NH03054. D-90471 UC1854/UC2854/UC3854 pp171-177, D90471N uc3854 3kw pfc UNITRODE Claudio de Sa e Silva PFC 3kw Power Factor Correction with the UC3854 2kw pfc sc265 triac 2kw uc3854 3kw uc3854 UC3854 for PFC 3.5kw 3.5kw pfc PDF

    RJJ0319DSP

    Abstract: BCR8PM equivalent RJP30H2 N0201 rjj0319 NP109N055PUJ rjk5020 RJP30E2DPP NP75N04YUG lg washing machine circuit diagram
    Text: 2012.01 Renesas Discrete General Catalog Transistor / Diode / Triac / Thyristor General Catalog www.renesas.com Power MOSFETs Thyristors/TRIACs IGBTs Bipolar Transistors for Switching Amplification Transistors Product Numbers Applications Diodes What gives rise to this sort of encounter?


    Original     		R07CS0003EJ0200 RJJ0319DSP BCR8PM equivalent RJP30H2 N0201 rjj0319 NP109N055PUJ rjk5020 RJP30E2DPP NP75N04YUG lg washing machine circuit diagram PDF

    2am smd transistor

    Abstract: transistor smd 4z HALL SENSOR A 22L 78Mos EL 14v 4c 78 MOS GENERAL SEMICONDUCTOR MARKING mJ SMA ED smd transistor marking 12W TRANSISTOR SMD MARKING CODE 1P TRANSISTOR SMD MARK CODE 7a
    Text: High-side Power Switch with Diagnostic Function SI-5155S External Dimensions unit: mm ● Built-in diagnostic function to detect short and open circuiting of loads and output status signals ● Low saturation PNP transistor use ● Allows direct driving using LS-TTL and C-MOS logic levels


    Original     		SI-5155S O-220 Rati03S SPX-62S SI-3011S SPX-G32S SI-3101S SPZ-G36 SI-3102S SSB-14 2am smd transistor transistor smd 4z HALL SENSOR A 22L 78Mos EL 14v 4c 78 MOS GENERAL SEMICONDUCTOR MARKING mJ SMA ED smd transistor marking 12W TRANSISTOR SMD MARKING CODE 1P TRANSISTOR SMD MARK CODE 7a PDF

    MP6101

    Abstract: n channel fet array
    Text: MP6101 POWER MOS FET MODULE SILICON N CHANNEL MOS TYPE 7T-MOS FET 6 IN 1 HIGH POWER SWITCHING APPLICATIONS. INDUSTRIAL APPLICATIONS MOTOR DRIVE APPLICATIONS. •Pack a g e w i t h Heat Sink Isolated Lead. . H i g h D rain P o wer Dissipation. : P T =120W


    OCR Scan     		MP6101 300yA Ta-25 Drain940 100/i MP6101 n channel fet array PDF

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA MP4403 TOSHIBA POWER M05 FET MODULE SILICON N CHANNEL MOS TYPE L2-tt-MOSIV 4 IN 1 INDUSTRIAL APPLICATIONS Unit in mm HIGH POWER, HIGH SPEED SWITCHING APPLICATIONS. HAMMER DRIVE, PULSE MOTOR DRIVE AND INDUCTIVE LOAD SWITCHING. • 4-Volt Gate Drive Available


    OCR Scan     		MP4403 PDF

    hitachi mosfet power amplifier audio application

    Abstract: 2SK215 equivalent PM4550C 2sd667 2sb647 2SD667 equivalent 2SJ99 K429 HITACHI 2SJ56 k399 Hitachi 2sk176 2sj56
    Text: APPLICATION NOTE 1-9 Pov/er MOS FET • ' Bo* 3 V•? * ¿ 'S r ^ m is y 701 S ! Reo N o 64 1688 07 P O BO X 1194. R A N D tíU R G , 2 1 2 5 M F K E N T H O US E D O V E R S T R E E T . R A N D B U R G T V L , 21 9 4 0 1 1 7 8 9 1 4 0 0 /2 T E L E X 4 -2 0 4 5 2 F A X 1 0 1 1 )7 8 7 0 2 6 3


    OCR Scan     		RE79-24 hitachi mosfet power amplifier audio application 2SK215 equivalent PM4550C 2sd667 2sb647 2SD667 equivalent 2SJ99 K429 HITACHI 2SJ56 k399 Hitachi 2sk176 2sj56 PDF